55NS Search Results

Contextual Info: Very Low Power CMOS SRAM 128K X 16 bit BS616LV2016 Pb-Free and Green package materials are compliant to RoHS n FEATURES n DESCRIPTION Ÿ Wide VCC operation voltage : 2.4V ~ 5.5V Ÿ Very low power consumption : VCC = 3.0V Operation current : 30mA Max. at 55ns

Contextual Info: Very Low Power CMOS SRAM 2M X 8 bit BS62LV1600 Pb-Free and Green package materials are compliant to RoHS n FEATURES n DESCRIPTION Ÿ Wide VCC operation voltage : 2.4V ~ 5.5V Ÿ Very low power consumption : VCC = 3.0V Operation current : 46mA Max. at 55ns

AS6C1008

Abstract: AS6C1008-55
Contextual Info: February 2007 AS6C1008 128K X 8 BIT LOW POWER CMOS SRAM FEATURES GENERAL DESCRIPTION Access time :55ns Low powe r consumption: Operating current:10 mA TYP. Standby current: 1 µA (TYP.) Single 2.7V ~ 5.5V po we r supply Fully Compatible with all Competitors 5V product

UN45

Contextual Info: STK11C68-M SlfTlTEH CMOS nvSRAM High Performance 8K x 8 Nonvolatile Static RAM MlL-STD-883/SMD # 5962-92324 FEATURES 30,35,45 and 55ns Access Times 15,20 and 25ns Output Enable Access Unlimited Read and Write to SRAM Software STORE Initiation Automatic STORE Timing

smd transistor HB

Abstract: LP62S16128B-T
Contextual Info: LP62S16128B-T Series 128K X 16 BIT LOW VOLTAGE CMOS SRAM Features n Operating voltage: 2.7V to 3.6V n Access times: 55/70 ns max. n Current: Very low power version: Operating: 55ns 40mA (max.) 70ns 35mA (max.) Standby: 10µA (max.) n n n n n Full static operation, no clock or refreshing required

382e

Contextual Info: STK10C68-M SimTEH CMOS nvSRAM High Performance 8K x 8 Nonvolatile Static RAM MIL-STD-833/SMD 5962 - 93056 FEATURES 30,35, 45 and 55ns Access Times 15,20 and 25ns Output Enable Access Unlimited Read and Write to SRAM Hardware STORE Initiation Automatic STORE Timing

AS6C1016

Abstract: sram 64k 64k x 8 sram
Contextual Info: OCTOBER 2007 January 2007 AS6C1016 X 8CMOS BIT LOW POWER CMOS SRAM 64K X 16 BIT LOW512K POWER SRAM FEATURES GENERAL DESCRIPTION Fast access time : 55ns Low power consumption: Operating current : 20mA TYP. Standby current : 2 A (TYP.) Single 2.7V ~ 5.5V power supply

BS62LV2006

Abstract: BS62LV2006DC BS62LV2006SC BS62LV2006SI BS62LV2006STC BS62LV2006STI BS62LV2006TC BS62LV2006TI TSOP-32
Contextual Info: Very Low Power CMOS SRAM 256K X 8 bit BS62LV2006 Pb-Free and Green package materials are compliant to RoHS „ FEATURES „ DESCRIPTION y Wide VCC operation voltage : 2.4V ~ 5.5V y Very low power consumption : VCC = 3.0V Operation current : 23mA Max. at 55ns

AS6C6264

Abstract: 6264 SRAM AS6C6264-55PCN SRAM 6264
Contextual Info: February 2007 AS6C6264 8K X 8 BIT LOW POWER CMOS SRAM FEATURES GENERAL DESCRIPTION Access time :55ns Low power consumption: Operation current : 15mA TYP. , VCC = 3.0V Standby current : 1µ A (TYP.), VCC = 3.0V Wide range power supply : 2.7 ~ 5.5V Fully Compatible with all Competitors 5V product

AS6C62256-55PCN

Abstract: AS6C62256-55SIN AS6C62256
Contextual Info: February 2007 AS6C62256 32K X 8 BIT LOW POWER CMOS SRAM FEATURES GENERAL DESCRIPTION Access time : 55ns Low power consumption: Operation current : 15mA TYP. , VCC = 3.0V Standby current : 1µ A (TYP.), VCC = 3.0V Wide range power supply : 2.7 ~ 5.5V Fully Compatible with all Competitors 5V product

BGA-48-0608

Abstract: BH616UV8011
Contextual Info: Ultra Low Power/High Speed CMOS SRAM 512K X 16 bit BH616UV8011 Pb-Free and Green package materials are compliant to RoHS „ FEATURES „ DESCRIPTION y Wide VCC low operation voltage : 1.65V ~ 3.6V y Ultra low power consumption : Operation current : 12mA Max. at 55ns

tsop32 8x20

Abstract: M68AF127B PDIP32 SO32 TSOP32 M68AF127
Contextual Info: M68AF127B 1Mbit 128K x8 , 5V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 4.5 to 5.5V ■ 128K x 8 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 55ns ■ LOW STANDBY CURRENT ■ ■ LOW VCC DATA RETENTION: 2V TRI-STATE COMMON I/O

M29W512B

Abstract: PLCC32 TSOP32
Contextual Info: M29W512B 512 Kbit 64Kb x8, Bulk Low Voltage Single Supply Flash Memory • SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 55ns ■ PROGRAMMING TIME – 10µs per Byte typical ■ PROGRAM/ERASE CONTROLLER – Embedded Byte Program algorithm

Contextual Info: HIGH-SPEED 3.3V 8 K x 16 DUAL-PORT STATIC RAM IDT70V25S/L In te g ra te d D e v iz e T e c h n o lo g y , l i e . FEATURES: • True Dual-Ported m em ory cells which allow sim ulta­ neous reads of the sam e m em ory location • H igh-speed access — Com m ercial: 25/35/55ns max.

Contextual Info: HIGH-SPEED 2K x 9 DUAL-PORT STATIC RAM WITH BUSY & INTERRUPT IDT70121S/L IDT70125S/L Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • H igh-speed access - Com m ercial: 25/35/45/55ns max. • Low -power operation - ID T70121/70125S Active: 500m W (typ.)

idt71028S

Contextual Info: CMOS STATIC RAM 1 MEG 256K X 4-BIT ADVANCE INFORMATION IDT71028 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 256K x 4 configuration • High-speed access — Military: 30/35/45/55ns (max.) — Commercial: 25/35/45ns (max.) • Low power consumption

Contextual Info: HIGH-SPEED 3.3V 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPT IDT71V321S/L IDT71V421S/L I n t e g r a t e d D e v iz e T e c h n o lo g y , l i e . FEATURES: • H igh-speed access — Industrial: 25ns max. — C om m ercial: 25/35/55ns (max.) • Low -power operation

Contextual Info: IDT7133SA/LA IDT7143SA/LA HIGH SPEED 2 K X 16 DUAL-PORT SRAM F e a tu re s ♦ High-speed access ♦ BUSY output flag on IDT7133; BUSY input on IDT7143 - M ilitary: 25/35/45/55/70/90ns max. ♦ Fully asynchronous operation from either port - Industrial: 55ns (max.)

Contextual Info: HIGH-SPEED 3.3V 16Kx 16 DUAL-PORT STATIC RAM PRELIMINARY IDT70V26S/L Integrated Device Technology, Inc. • FEATURES: • • • • • True Dual-Ported m em ory cells which allow sim ulta­ neous reads of the same m em ory location High-speed access — Com mercial: 25/35/55ns max.

Contextual Info: HIGH-SPEED 4K X 8 DUAL-PORT STATIC SRAM IDT7134SA/LA In t e g r a t e d D e v iz e T e c h n o lo g y , l i e . FEATURES: • High-speed access — Military: 25/35/45/55/70ns max. — Industrial: 55ns (max.) — Commercial: 20/25/35/45/55/70ns (max.) • Low-power operation

Contextual Info: PRELIMINARY IDT70V27S/L HIGH-SPEED 3.3V 3 2Kx 16 DUAL-PORT STATIC RAM In te g ra te d D e vice T e ch n o lo g y, Inc. FEATURES: • • True Dual-Ported memory cells which allow simulta­ neous access of the same memory location • High-speed access — Commercial: 25/35/55ns max.

Contextual Info: PRELIMINARY IDT70121S/L IDT70125S/L HIGH-SPEED 2K x 9 DUAL-PORT STATIC RAM WITH BUSY & INTERRUPT Integrated Device Technology, Inc. FEATURES: • High-speed access - Military: 35/45/55/70ns max. - Commercial: 25/35/45/55ns (max.) • Low-power operation

VDR 0047

Abstract: M68AW128M TFBGA48 TSOP44
Contextual Info: M68AW128M 2 Mbit 128K x16 3.0V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 2.7 to 3.6V ■ 128K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V

M68AR256M

Abstract: TFBGA48
Contextual Info: M68AR256M 4 Mbit 256K x16 1.8V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 1.65 to 1.95V ■ 256K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.0V