560 SOT23 Search Results

Contextual Info: User's Guide SLVU464 – July 2011 UCD90SEQ48EVM-560: 48-Pin Sequencer Development Board This user's guide describes the 48-pin Sequencer Development Board – UCD90SEQ48EVM-560. This development board contains a 48-pin socket and interface circuitry to support the UCD9090.

Contextual Info: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT560 ISSUE 1 – NOVEMBER 1998 FEATURES * Excellent hFE characterisristics up to IC=50mA * Low Saturation voltages E C PARTMARKING DETAIL – 560 B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage

pnp 500v

Abstract: FMMT560 DSA003698
Contextual Info: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT560 ISSUE 1 – NOVEMBER 1998 FEATURES * Excellent hFE characterisristics up to IC=50mA * Low Saturation voltages E C PARTMARKING DETAIL – 560 B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage

switch SOT-23-6

Contextual Info: NJM41030 3dB Video Amplifier • GENERAL DESCRIPTION The NJM41030 is a small package 3dB video amplifier. ■ FEATURES ● Operating Voltage ● Operating temperature range ● 3.1dB Amplifier, 560Ω Driver ● Frequency Characteristics ● Power Save Circuit

Contextual Info: NJM41030 3dB Video Amplifier p GENERAL DESCRIPTION The NJM41030 is a small package 3dB video amplifier. p FEATURES n Operating Voltage n Operating temperature range n 3.1dB Amplifier, 560Ω Driver n Frequency Characteristics n Power Save Circuit n Bipolar Technology

NJM4103

Contextual Info: NJM41030 3dB Video Amplifier Q GENERAL DESCRIPTION The NJM41030 is a small package 3dB video amplifier. Q FEATURES O Operating Voltage O Operating temperature range O 3.1dB Amplifier, 560Ω Driver O Frequency Characteristics O Power Save Circuit O Bipolar Technology

c5607

Abstract: TLV3702 TLV3701 TLV3701CD TLV3704 TLV370X
Contextual Info: TLV3701, TLV3702, TLV3704 FAMILY OF NANOPOWER PUSH-PULL OUTPUT COMPARATORS SLCS137A – NOVEMBER 2000 – REVISED JANUARY 2001 D D SUPPLY CURRENT vs SUPPLY VOLTAGE 800 description The TLV370x is Texas Instruments’ first family of nanopower comparators with only 560 nA per

Contextual Info: TLV3701, TLV3702, TLV3704 FAMILY OF NANOPOWER PUSH-PULL OUTPUT COMPARATORS SLCS137 – NOVEMBER 2000 D D D D D D Low Supply Current . . . 560 nA/Per Channel Input Common-Mode Range Exceeds the Rails . . . –0.1 V to VCC + 5 V Supply Voltage Range . . . 2.5 V to 16 V

Contextual Info: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 1 - NOVEMBER 1998 o m FEATURES * E xce lle n t h FE c h a ra cte risristics up to lc = 50m A * L o w S a tu ra tio n v o lta g e s PARTM ARKING D E T A IL - 560 ABSOLUTE M AXIM UM RATINGS. PARAMETER VALUE

Contextual Info: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 1 - NOVEMBER 1998 o m FEATURES * E xce lle n t hFE c h a ra cte risristics up to lc= 5 0m A * L o w S a tu ra tio n v o lta g e s PARTM ARKING D E T A IL - 560 ABSOLUTE M AXIM UM RATINGS. PARAMETER SYMBOL

MIDCOM 671-8005

Abstract: "Microphone Preamplifier" electret mic carbon microphone Midcom modem transformer 671-8005 671-8005 preamplifier for microphone 10kv transformer AD8517 AD8527
Contextual Info: a AN-560 APPLICATION NOTE One Technology Way • P.O. Box 9106 • Norwood, MA 02062-9106 • 781/329-4700 • World Wide Web Site: http://www.analog.com Low Voltage Amplifier By Olivier Betancourt BATTERY VOLTAGE DISCHARGE The AD8517 operates at supply voltages as low as 1.8 V.

vbci

Abstract: TLV3702 TLV3701 TLV3701CD TLV3704 TLV370X 53VCC
Contextual Info: TLV3701, TLV3702, TLV3704 FAMILY OF NANOPOWER PUSH-PULL OUTPUT COMPARATORS SLCS137A – NOVEMBER 2000 – REVISED JANUARY 2001 D D D D D D Low Supply Current . . . 560 nA/Per Channel Input Common-Mode Range Exceeds the Rails . . . –0.1 V to VCC + 5 V Supply Voltage Range . . . 2.5 V to 16 V

Q62901-B65

Abstract: Q62902-B156-F222 Q62902-B152-F222 A671 transistor Datasheet diode BZW 70-20 LW T67C-S2U1-35 Q62703-Q6351 LM776 din standard 5480 Q62703-P4699
Contextual Info: LUMINESZENZDIODEN LIGHT EMITTING DIODES 58 Wavelength λdomtyp. 645 nm 633 nm 628 nm 617 nm 606 nm 590 nm 587 nm 570 nm 560 nm 528 nm 505 nm 470 nm 465 nm Viewing Angle (typ.) 30 … 70 degrees 40 … 80 degrees > 80 degrees > 80 degrees > 80 degrees Die Technology

BAT54A

Abstract: BAT54C BAT54S 12p sot-23 MV MARKING SOT23 ,MARKING 12p SOT-23 LF MARKING CODE MARKING 12p SOT-23
Contextual Info: 7 1 1 0 0 2 b G ü b ö 3 0 ö 560 • P H I N BAT54A; C; S SCHOTTKY BARRIER DIODE Silicon epitaxial Schottky Barrier double diodes with an integrated p-n junction protection ring in a microminiature SOT-23 envelope intended for surface mounting. The diodes feature an especially low forward voltage.

BB109G

Abstract: BB105B BB109 BB105G BB112 BBY40 T092
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 electronics B apM Kanbi Kofl: Ddm» [n ] Cdm» [n®] V r » [B] If [mA] BB105G BB109G BBY40 BB105B 1,8 4,3 6,0 2,0 18 32 30 18 30 30 30 35 0,2 0,2 0,02 0,2 BB112 17,0 560 12 0,05 Kopnyc

FMMT560T

Contextual Info: A Product Line of Diodes Incorporated FMMT560 500V PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • BVCEO > -500V IC = -150mA high Continuous Collector Current Excellent hFE Characteristics up to IC = 100mA

Contextual Info: A Product Line of Diodes Incorporated FMMT560Q 500V PNP HIGH VOLTAGE TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. •  Features 

Contextual Info: A Product Line of Diodes Incorporated FMMT560 500V PNP HIGH VOLTAGE TRANSISTOR IN SOT23 Features Mechanical Data •         BVCEO > -500V IC = -150mA high Continuous Collector Current ICM Up to 500mA Peak Pulse Current Excellent hFE Characteristics up to IC = 100mA

sot23 marking tr1

Abstract: MARKING SOT23 tr2 E50U PNP POWER TRANSISTOR SOT23-6L transistor TR1 sot23
Contextual Info: IMZ2A COMPLEMENTARY DUAL GENERAL PURPOSE AMPLIFIER TRANSIS VOLTAGE 50 Volts POWER SOT23-6L 300mW Unit：inch mm FEATURES • PNP/ NPN epitaxial silicon, planar design • Collector-emitter voltage VCE=50V • Collector current IC=150mA • Lead free in comply with EU RoHS 2002/95/EC directives.

E50U

Abstract: PNP TRANSISTOR "SOT23-6L"
Contextual Info: IMZ2A COMPLEMENTARY DUAL GENERAL PURPOSE AMPLIFIER TRANSISTORS VOLTAGE 50 Volts POWER SOT23-6L 300mW Unit：inch mm FEATURES • PNP/ NPN epitaxial silicon, planar design • Collector-emitter voltage VCE=50V • Collector current IC=150mA • Lead free in comply with EU RoHS 2002/95/EC directives.

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon Featrues L2SA1037AKQLT1G Series z We declare that the material of product compliance with RoHS requirements. 3 ORDERING INFORMATION Device Shipping Package 1 L2SA1037AKQLT1G SOT23 3000/Tape & Reel

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon Features L2SA1037AKQLT1G Series z We declare that the material of product compliance with RoHS requirements. 3 ORDERING INFORMATION Device Shipping Package 1 L2SA1037AKQLT1G SOT23 3000/Tape & Reel

L2SA1037AKRLT1G

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon Featrues L2SA1037AKXLT1G Series z We declare that the material of product compliance with RoHS requirements. 3 ORDERING INFORMATION Device Shipping Package 1 L2SA1037AKXLT1G SOT23 3000/Tape & Reel

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon Featrues L2SA1037AKXLT1G z We declare that the material of product compliance with RoHS requirements. 3 ORDERING INFORMATION Device Shipping Package 1 L2SA1037AKXLT1G SOT23 3000/Tape & Reel