561-14 TRANSISTOR Search Results

BFN 15

Abstract: KTY13A SOT R25 16N250 KTY13C BF sot-89 CQV234 KTY13D CQV232 KTY13B
Contextual Info: High-voltage transistors Type PNP = P NPN = N Maximum ratings h mA K ;eo V Characteristics ramb = 25 °C Pto. mW ^ FE — K* V h mA V MHz Package outlines Pin configu­ Type ration No. ^ CEsat h BF 622 BFN 16 BFN 18 BFN 20 BFN 22 BFN 24 BFN 26 N N N N N

RCA H 541

Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
Contextual Info: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK

transistor 373

Abstract: 8060 transistor
Contextual Info: Catalog 1307612 J & IV IF * Specialty Sockets Revised 7-01 Transistor Sockets 8058 & 8060 Series 8060-1G11 8060-1G6 FEATURES: PERFORMANCE SPECIFICATIONS: The 8058/8060 family of teflon sockets, with beryllium copper contacts, offers many features which allow them to be utilized in the most severe

8060 transistor

Abstract: 104 csk 8060-1G6 M8058-1G18 8060-1G12 1G22 d 317 transistor transistor 373 transistor c 373 1g45
Contextual Info: Data downloaded from http://www.anglia.com - the website of Anglia - tel: 01945 474747 Catalogue 1654741 Specialty Sockets Revised 1-04 Transistor Sockets 8058 & 8060 Series 8060-1G11 8060-1G6 FEATURES: PERFORMANCE SPECIFICATIONS: The 8058/8060 family of teflon sockets, with beryllium copper contacts,

diode SY 192

Abstract: KP902A Datenblattsammlung Halbleiterbauelemente DDR VEB mikroelektronik transistor kp mikroelektronik datenblattsammlung "halbleiterwerk frankfurt" KP306a mikroelektronik DDR
Contextual Info: . • M ' - l ä r o u jk 1 U ’i m - í!Í'.>. "lA T T S A M M . 'Q elektronische Bauelemente IWT iO 1/87 I# %# S Die vorliegenden Datenblätter dienen nur zur Information« Sie beinhalten Informationen über Halbleiterbauelemente des in den Listen elektronischer Bauelemente eingestuften Sortiments«

transistor NEC D 882 p

Abstract: transistor NEC b 882 p transistor NEC 882 p transistor NEC b 882 nec d 882 p transistor nec 358 amplifier transistor NEC D 587 34077 6069 marking
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fr = 9 GHz TYP. • Low Noise, High Gain •

UVQ-48/2.5-D48

Abstract: rtd 2025 106c tantalum capacitors 7D24
Contextual Info: UVQ Series Low-Profile, Isolated Quarter-Brick 2.5-40 Amp DC/DC Converters ORDERING GUIDE SUMMARY Model ➀ VOUT Range ➀ All Models 1.2V to 48V IOUT Range ➀ VIN Range Efficiency 2.5A to 40A 18-36V or 36-75V Up to 94%, model dependent INPUT CHARACTERISTICS

759 power op amp

Abstract: KOTA MICROCIRCUITS Output amplification 100MHZ C561 GKX20000 KH560 KH563AI S11561 572A1
Contextual Info: A m p l i fy t h e H u m a n E x p e r i e n c e www.cadeka.com KH563 Wideband, Low Distortion Driver Amplifier Features • ■ ■ ■ ■ General Description 150MHz bandwidth at +24dBm output Low distortion 2nd/3rd: -59/-62dBc @ 20MHz and 10dBm Output short circuit protection

14d 431K varistor

Abstract: 10d 431K Varistor 20d 391K varistor 10d 471k 14D 391K 14D 471K 14d 151K varistor 07d 391k VARISTOR MVR 14d 390k
Contextual Info: MVR Series Metal Oxide Varistors Description MERITEK FEATURES • • • • Fast response to rapidly rising surge voltage High performance clamping voltage characteristics Operating / storage temperature: -40 ~ +85°C / -40 ~ +125°C Varistor voltage: 18V to 1800 V

2SC5012-T1

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t ft- = 9 G H z T Y P . •

10M1TR

Abstract: DTC143TKA
Contextual Info: DTC143TE DTC143TUA DTC143TKA Digital transistor, NPN, with 1 resistor Features Dimensions Units : mm available in EMT3 (EM3), UMT3 (UMT, SC-70), and SMT3 (SMT, SC-59) packages DTC143TE (EMT3) package marking: DTC143TE, DTC143TUA, and DTC143TKA; 03 0 .7 + QJ

20d 391K varistor

Abstract: varistor 10d 391k 100 471K varistor 14D 561K 14D 471K 14D 821K varistor 14d varistor 391k
Contextual Info: MVR Series Metal Oxide Varistors Description MERITEK FEATURES • • • • Fast response to rapidly rising surge voltage High performance clamping voltage characteristics Operating / storage temperature: -40 ~ +85°C / -40 ~ +125°C Varistor voltage: 18V to 1800 V

S-AU80

Abstract: TOSHIBA RF Power Module S-AV17 toshiba s-au80 quality FM TRANSMITTER S-AV17 toshiba 2sc2879 2sc2879 equivalent 2SK3075 S-AV6 5252 F ic
Contextual Info: RF Power Devices PRODUCT GUIDE • Selection Guide for RF Power Transistors Package PO W ø 12.7 10PEP 20PEP HF 30 MHz 60PEP 2SC2290 100PEP 2SC2879 150PEP 2SC2510* * : VCC = 28 V Package PO (W) ø 12.7 6 28 VHF 175 MHz 32 80 4 2SC2782 ■ Main Characteristics of RF Power Transistors

14d 431K varistor

Abstract: 14D 391K 20d 391K varistor 10d 471k 14D 471K 13007D 14D 561K 10d 431K Varistor VARISTOR MVR 431K20D
Contextual Info: MVR Series Metal Oxide Varistors Description MERITEK FEATURES • • • • Fast response to rapidly rising surge voltage High performance clamping voltage characteristics Operating / storage temperature: -40 ~ +85°C / -40 ~ +125°C Varistor voltage: 18V to 1800 V

MIL-S-19500

Abstract: 2902n TRANSISTOR 2n697 2N3700 DIE MIL-S-19500 FOR POWER LINE TRANSISTOR 2N497 2N497 JAN 2n2222 jan 2N657 2N910 JAN
Contextual Info: Winter 1997-1998 Microsemi's Watertown division received QPL Status on the following transistor part types in August 1997. PART TYPE 2N497 & S 2N498 & S 2N656 & S 2N657 & S 2N696 & S 2N697 & S 2N1131 & L 2N1132 & L 2N718A 2N1613 & L 2N720A 2N1893 & S 2N1711 & S

znr 14 k 201 varistor

Abstract: znr 14 k 221 varistor znr 10 k 621 varistor znr k 821 varistor znr k 201 varistor znr 14 k 361 varistor znr 20 k 391 varistor thyristor CSG2001-14A04 Znr 14 k 391 znr k 391 varistor
Contextual Info: “ZNR” Transient/Surge Absorbers Type D “ZNR” Transient/Surge Absorbers Type: Series: D E “ZNR” Transient/Surge Absorber, Series E, Type D features large surge current and energy handling capability for absorbing transient overvoltage in a compact size.

znr 14 k 361 varistor

Abstract: znr 14 k 221 varistor thyristor CSG2001-14A04 znr k 391 varistor znr 14 k 201 varistor znr 14 k 330 varistor znr k 201 varistor znr3 ZNR 471
Contextual Info: “ZNR” Transient/Surge Absorbers Type D “ZNR” Transient/Surge Absorbers Type: Series: D E “ZNR” Transient/Surge Absorber, Series E, Type D features large surge current and energy handling capability for absorbing transient overvoltage in a compact size.

UEI 20 SP 010

Abstract: Datenblattsammlung u82720 mikroelektronik datenblattsammlung VEB mikroelektronik UB8820M "halbleiterwerk frankfurt" UEI 15 SP 020 Aktive elektronische Bauelemente 1988 Teil 2 B4207D
Contextual Info: e l e k t r o m k - b a u e ì e m e n t e * W UKaÊÊi I Ä I L I I m V w •1 vît M •'4 n, ' I ill ■ DATEN BLATTSAMM LU NG elektronische bauelemente ?: V' I j| D A I Ï K B L A U S A MML ÜHG "E lektronische Bauelemente1' Ausgabe 1/89 14 : "Neue und weiterentwiekelte Bauelemente sowie ausgewählte Importbauelemente"

MSD 7818

Abstract: MN9106 information applikation 7490 N TDA 5700 information applikation mikroelektronik udssr hefte 143KT1 Mikroelektronik Information Applikation K 176 LE, K 561 LN
Contextual Info: In n in ik ü r Q fâ lI Information Applikation RGW Typen­ übersicht + Vergleich TeiM UdSSR JitfÆÊL JUUUUUUL&JJJUL i m i n i ^ r ^ c z l c i c b p o n Information Applikation , 9 H E F T 4 9 * R G W T y p e n ü b e r s i c h t + V e r g l e i c h Teil 1

Varistor 7D 471K

Abstract: 14d 431K varistor transistor TPV 3100 14d 151K varistor 10d 471k 431K20D 7d 241k 14n 221k VARISTOR MVR 14D 391K
Contextual Info: MVR Series Metal Oxide Varistors Description MERITEK FEATURES • • • • Fast response to rapidly rising surge voltage High performance clamping voltage characteristics Operating / storage temperature: -40 ~ +85°C / -40 ~ +125°C Varistor voltage: 18V to 1800 V

UTC 1316

Abstract: AVANTEK utc 561 db opera 215 20247 rf transistor Avantek* UTC 1p2 transistor 11-903 AVANTEK utc UTC 1316 amplifier Avantek amplifier UTC
Contextual Info: AVANTEK INC m H4E ] UM nhh 0QQÔ0S1 T BIAVA UTO/UTC 561 Series Thin-FIlm Cascadable Amplifier 10 to 500 MHz FEATURES APPLICATIONS . = • Frequency Range; 10 to 500 MHz • High Output Power: . +27 dBm Typ) • Temperature Compensated • IF/RF Amplification

Contextual Info: • ^53*131 0023^51 2^3 H A P X N AMER PHILIPS/DISCRETE BST78 b7E D J V HIGH-VOLTAGE N-CHANNEL VERTICAL D-MOS TRANSISTOR High-voltage N-channel vertical D-MOS transistor in plastic TO-126 envelope and intended fo r use in relay, high-speed and line-transformer drivers.

thyristor CSG2001-14A04

Contextual Info: “ZNR” Transient/Surge Absorbers Type D “ZNR” Transient/Surge Absorbers Type: Series: D E “ZNR” Transient/Surge Absorber, Series E, Type D features large surge current and energy handling capability for absorbing transient overvoltage in a compact size.

ha 1452 Amplifiers

Abstract: 702 sot 23 100Z3
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT =10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz ;• .6 dB TYP at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 3.0 dB TYP at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE