5700A Search Results

UDN5714M

Abstract: TD62479P
Contextual Info: ★ 300mA-70V i t i * ★ DTL B iîŒ A * 3 0 V IiŒ ★ 4 0 Ï & I K ¿ L f UDN 5700A -> 0 — ^¡b Ö T IS @ %. ft t ft MIN — TYP 9 MAX # fit tt £ 70 V 1.5 1.75 V L— H 300 750 ns NS H— L 200 500 ns M OT AND 35 43 mA Sig NAND 40 53 mA AMD VOH TI

UDN5707A

Abstract: Power Drivers UDN-5703A UDN-5707A UDN-5733A UDN5700A
Contextual Info: SERIES UDN-5700A QUAD PERIPHERAL/POWER DRIVERS SERIES UDN-5700A QUAD 2-INPUT PERIPHERAL/POWER DRIVERS —Transient-Protected Outputs FEATURES: • Fo u r Log ic Types • D T L/ T T iy P M O S / C M O S C o m p a tib le Inpu ts • Low In p u t C u rre n t

UDN5713M

Abstract: UDN-5713M Po-ABS TD62478P
Contextual Info: ★ 30OmA 70V Oit! ★ DTL Ü5 tJÏA* 30VItŒ ★ 4 ¡S&K& i: L T UDN 5700A v 'i — X h O - JM i & ft r i j [Sj MIN TYP 9 MAX ¥ tt 70 V 1.5 ,1 .7 5 300 750 200 500 35 49 40 53 36 50 40 50 1.5 V ns VoH tt £ TI V riK) Vf<ki n tpd Ice Po I f = 300mA lo —150mA

UDN5712M

Abstract: UDN-5712M TD62477P
Contextual Info: — 30 — ★ 300mA- 70V i t i * ★ DTL S i t Œ A * 3 0 V i t Œ ★ 4 0 « ¿ L t UDN 5700A is ') — t' « i ft- & ~H ft — 9 # MIN TYP & tt « MAX 70 V 1 .5 1 .7 5 V L -*H 300 750 ns NS H—>L 200 500 ns MOT AND 35 49 mA c ;„ ^ ‘6 NAND 40 53

MIMMG200S060B6EN

Contextual Info: MIMMG200S060B6EN 600V 200A IGBT Module RoHS Compliant FEATURES □ High short circuit capability,self limiting short circuit current □ VCE sat with positive temperature coefficient □ Fast switching and short tail current □ Free wheeling diodes with fast and soft reverse recovery

8ohm LS

Abstract: FF800R12KL4C
Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FF 800 R 12 KL4C Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom

DIM1200FSM12-A000

Contextual Info: DIM1200FSM12-A000 DIM1200FSM12-A000 Single Switch IGBT Module Replaces July 2002, version DS5547-2.1 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5547-3.0 March 2003

MSI super Q diodes

Contextual Info: MSI ELECTRONICS INC 3SE D E3 SbSbMbb 00003^0 1 E M S I UHF/VHF ABRUPT TUNING DIODES SUPER Q @ electronics m e SER IES 1N 5 6 8 1A -1 N 5 695 A 1N 5 6 9 8A -1 N 5 710 A . . . . with capacitance tuning ratios usable over most of their operating bias voltage range • and readily matched in groups, the diodes featured here

IGBT FF 300

Abstract: FF800R12KL4C M4425
Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FF 800 R 12 KL4C Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom

MC 340 transistor

Abstract: RJ 45 8p8c rj45-8p8c RJ45 datasheet 8P8C air-lmc352 rj45 jack motorola canopy 5200ap ANT58G28SDA-N TNC connector RJ45 PCI jack
Contextual Info: RFI WiFi List Broadband RF Connector Cross Reference Chart Manufacturer 3Com Breezecom / Alvarion Buffalo Cisco / Aironet Product AirConnect AP Device connector MMCX Jack Mating RFI connector type MMCX Plug Access points 7000 / 8000 AirConnect AP 3CRWE7474

R500CH28 Westcode IXYS

Abstract: R500CH28 R2475ZC20 Thyristor 6kA
Contextual Info: Date:- 9 May, 2003 Data Sheet Issue:- 1 Distributed Gate Thyristor Type R2475ZC20# to R2475ZC28# Old Type Number: R500CH28 Absolute Maximum Ratings MAXIMUM LIMITS VOLTAGE RATINGS UNITS VDRM Repetitive peak off-state voltage, (note 1) 2000-2800 V VDSM Non-repetitive peak off-state voltage, (note 1)

Contextual Info: Power Module 600V 200A IGBT Module MG06200S-BN4MM RoHS Features • H  igh short circuit capability, self limiting short circuit current • F  ree wheeling diodes with fast and soft reverse recovery • V  CE sat with positive temperature coefficient

relay Re 04501

Abstract: JFET TRANSISTOR REPLACEMENT GUIDE j201 re 04501 relay wabash relay 1SK6-0001 wabash reed relay JFET TRANSISTOR REPLACEMENT GUIDE e201 npdsu406 34901a ysi 44031
Contextual Info: ••• • V . / • * •. Agilent Technologie: Innovating the HP Way ' — ENGI86 Service Guid< Agilent 34970A D ata Acquisition / Switch U nit C opyright 1999 H ew lett-Packard Company All Rights Reserved. P rinting History E dition 1, Ju n e 1997

Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FF 800 R 12 KL4C vorläufige Daten prelim inary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage

I3-5700J-5

Contextual Info: HI-5700 ff HARRIS S E M I C O N D U C T O R 8-Bit, 20 MSPS Flash A/D Converter December 1993 Features Description • 20MSPS with No Missing Codes The HI-5700 is a monolithic, 8-bit, CMOS Flash Analog-toDigital Converter. It is designed or high speed applications

Contextual Info: DIM1200FSM12-A000 Single Switch IGBT Module Replaces DS5547-3.1 DS5547-4 October 2010 LN27662 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  Non Punch Through Silicon VCES VCE(sat) * (typ) IC (max) IC(PK)

E 5691A

Abstract: 1N56 IN5694 5686a
Contextual Info: UHF/VHF ABRUPT TUNING DIODES SUPER Q S E R IE S 1N 5681A 1N 5695A 1N 5696A 1N 5710A . . . wi t h capacitance tuning ratios usable over most o f their operating bias voltage range • and readily matched in groups, the diodes featured here are most suitable for many RF tuning applications including electronic

Contextual Info: For More Information Visit 3M Electric Utility Splicing Web Pages / Glossary of Splicing Terms.316 Cable Types for Splicing. 317-319

DIM1200FSM12-A000

Abstract: DIM1200FSM12-A
Contextual Info: DIM1200FSM12-A000 Single Switch IGBT Module Replaces DS5547-4 DS5547-5 July 2014 LN31765 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  Non Punch Through Silicon VCES VCE(sat) * (typ) IC (max) IC(PK) (max)

UL 486d

Contextual Info: For installations from 120 V to 1 kV, 3M offers several low voltage splice options, including 3M-developed cold shrink technology, heat shrink, resin and tape. 3M Low Voltage Splices are reliable in buried, overhead, indoor or outdoor applications. Section

DIM1200FSS12-A000

Contextual Info: DIM1200FSS12-A000 Single Switch IGBT Module Replaces DS5834-1.2 DS5834-2 October 2010 LN27661 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  Non Punch Through Silicon  Isolated Cu Base with Al2O3 Substrates VCES VCE(sat) * (typ) IC (max)

WESTINGHOUSE F80

Abstract: N260CH24 Westinghouse thyristor 1000A N260CH westinghouse thyristor drive 4009S
Contextual Info: UESTCODE SEMICONDUCTORS 3^E T> m TTQTiSS 000E1Û5 3 • UESB Technical Publication WESTCODE ® SEMICONDUCTORS TN260C Issue 2 June 1985 V Convertor Grade Capsule Thyristor Type N260C 510 amperes average: up to 3600 volts V r r m Ratings Maximum values at 125°C Tj unless stated otherwise

Contextual Info: D^DSD QMDr n n o U rtrfi U electronics m e UHF/VHF ABRUPT S E R IE S 1N 5681A 1N 5695A 1N 5696A 1N 5710A tuning diodes . . . . w ith capacitance tuning ratios usable over most o f their operating bias voltage range - and readily matched in groups, the diodes featured here

DIM1200FSM12-A000

Contextual Info: DIM1200FSM12-A000 DIM1200FSM12-A000 Single Switch IGBT Module Replaces July 2002, version DS5547-2.1 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5547-3.0 March 2003