581 PNP Search Results

BF569

Abstract: BF569R
Contextual Info: BF569/BF569R Vishay Semiconductors Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For selfoscillating RF mixer stages. Features D High gain D Low noise 1 1 13 581 13 581 94 9280 2 9510527 3 3

BF569

Abstract: BF569R
Contextual Info: BF569/BF569R Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For selfoscillating RF mixer stages 1 1 13 581 13 581 94 9280 2 9510527 3 3 BF569 Marking: LH Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter

BF569

Abstract: BF569R
Contextual Info: BF569/BF569R Vishay Telefunken Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For selfoscillating RF mixer stages. Features D High gain D Low noise 1 1 13 581 13 581 94 9280 2 9510527 3 3 BF569 Marking: LH

BF569

Abstract: BF569R
Contextual Info: BF569/BF569R Vishay Telefunken Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For selfoscillating RF mixer stages. Features D High gain D Low noise 1 1 13 581 13 581 94 9280 2 9510527 3 3 BF569 Marking: LH

NPN general purpose silicon transistors

Abstract: Transistors General UMZ1N transistor 526 c114e 2SC411K transistors C124E dual npn 500ma 581 PNP
Contextual Info: Transistors FMC6A IMD1A 94S-830-AC115E (96-458-AC124T) 575 Transistors IMD10A (96-555-IMD10) 582 Transistors IMD16A (96-473-IMD16) 583 Transistors IMD8A IMD9A (94S-902-AC144T) (94S-904-AC114Y) 581 Transistors General purpose transistor (dual transistors)

2N4338 substitution

Abstract: 2N4237 2N4238 2N4239 C-2688 MIL-PRF19500 2n4234 equivalent
Contextual Info: The documentation process conversion measures necessary to comply with this revision shall be completed by 10 December 1999. INCH-POUND MIL-PRF-19500/581A 10 September 1999 SUPERSEDING MIL-S-19500/581 23 April 1990 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON AMPLIFIER,

79-3544-15-05

Abstract: M12 4 PIN CIRCULAR PLASTIC CONNECTORS Female PCB connector m12 8 x m12x1 female connector 99-3431-601-04 3539/15 5 pole m12x1 CABEL RATING dose M12 IEEE 693
Contextual Info: Serie 763 763 Ü TI 620 702 709 710 711 712 719 423 425 440 581 678 680 682 720 723 623 690 691 Sensor Steckverbinder Serie 763 M12x1 Sensor connectors series 763 (M12x1) Kabelsteckverbinder • Rundsteckverbinder mit Schraubverriegelung (M12x1) • Steckverbinder umspritzt am Kabel

ic 7490 pin diagram

Abstract: mh 7490 TTL 7490 MHz frequency counter MECL System Design Handbook ic 7490 truth table mc1004p MC4051 MC8601 motorola Motorola AN-581
Contextual Info: AN-581 Application Note AN MSI 500 MHz FREQUENCY COUNTER USING MECL AND MTTL Prepared By Jon M . DeLaune Application Engineering The design of a MSI 8-digit LED read­ out 5 0 0 M H z counter using M E C L III , M E C L 10,000 and T T L is discussed. De­

BF579

Abstract: BF579R marking GG
Contextual Info: BF579/BF579R Vishay Semiconductors Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications UHF/VHF uncontrolled prestages with low noise and low cross modulation. Features D High transition frequency

AD308

Abstract: AD5811 AD581 AD581J AD581K AD581L AD581S AD581T AD581U Limiter PIN diode ADS model
Contextual Info: ANALOG DEVICES High Precision 10 Volt 1C Reference FEATURES Laser-Trimmed to High Accuracy: 10.000 Volts ± 5 m V L and U Trimmed Temperature Coefficient: 5ppm/°C max, 0 to +7Cl°C (L) 10ppnn/°C max, -55°C to +125°C (U) Excellent Long-Term Stability:

BF579

Abstract: BF579R marking GG
Contextual Info: BF579/BF579R Vishay Telefunken Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications UHF/VHF uncontrolled prestages with low noise and low cross modulation. Features D High transition frequency D Low distortion

BF579

Abstract: BF579R marking GG
Contextual Info: BF579/BF579R Vishay Telefunken Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications UHF/VHF uncontrolled prestages with low noise and low cross modulation. Features D High transition frequency D Low distortion

BF579

Abstract: BF579R
Contextual Info: BF579/BF579R Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications UHF/VHF uncontrolled prestages with low noise and low cross modulation. Features D High transition frequency D Low disortation 1 1

MPS2907

Abstract: MPS2907A PN2907A
Contextual Info: SAM S UN G SEMICONDUCTOR INC IME D MPS2907A | 7U4142 0007311 6 | PNP EPITAXIAL SILICON TRANSISTOR T-29-21 GENERAL PURPOSE TRANSISITOR • Collector-Emitter Voltage: Vceo = 60V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Ch aracteristic

BF 145 transistor

Abstract: transistor bf 968 transistor bf 600 BF968 Q62702-F612 BF 500 transistor
Contextual Info: E5E D • fl235bOS aoaMSaa 1 ■ SIEG ■ PNP Silicon Planar Transistor SIEMENS AKTIENGESELLSCHAF BF 968 D - fo r in p u t stages up to 9 0 0 M H z BF 9 6 8 is a PNP silicon UHF planar transistor w ith passivated surface in a low-capacitance

D70F2T1

Abstract: D71F2T1
Contextual Info: SURFACE-MOUNT PNP POWER TRANSISTORS D71F2T1 -50 VOLTS -2 AMP, 500mWATTS Designed for power amplifier applications, power switching applications. Features: • Low saturation voltage : V C E s a t = -0.5V (Max.) (IC • High speed switching time: = -1A) = 1.0jus (Typ.)

MPS2907A EQUIVALENT

Contextual Info: SAM SU NG SEMI CON DUCTOR INC IME D MPS2907A | T^IMS 0007311 6 | PNP EPITAXIAL SILICON TRANSISTOR T-29-21 GENERAL PURPOSE TRA N SISTO R • Collector-Emltter Voltage: V « o = 6 0 V • Collector Dissipation: Pc m ax =625m W ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

KTN2369AU

Abstract: KTN2369U KTN2907AU KTN2907U
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTN2907U/AU EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : ICEx=-50nA Max. ; VCe=-30V, Veb=-0.5V. • Low Saturation Voltage : V CEfeat)=-0.4V(Max.) ; Ic=-150mA, IB=-15mA.

ad308

Abstract: ADS81J AD581 ADS81 AD7570 AD581J AD581K AD581L AD581S AD581T
Contextual Info: ANALOG DEVICES □ High Precision 10 Volt IC Reference FEATURES Laser-Trimmed to High Accuracy: 10.000 Volts ±5m V L and U Trimmed Temperature Coefficient: 5ppm /°C max, 0 to +70°C (L) 10ppm/°C max, -55°C to +125°C (U) Excellent Long-Term S tability:

BFP96

Abstract: BFQ32C
Contextual Info: Product specification Philips Semiconductors 'P3/'23 PNP 4 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION SbE D BFQ32C 7 1 1 0 0 2 b 0 0 4 5 4 2 4 03b • P H I N PINNING PNP transistor in hermetically-sealed, sub-miniature, SOT 173 and SOT 173X

transistor 45 f 122

Abstract: BFQ32C SOT173 GHz PNP transistor BFP96
Contextual Info: Product specification Philips Semiconductors 'P3/'23 PNP 4 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION SbE D BFQ32C 7 1 1 0 0 2 b 0 0 4 5 4 2 4 03b • P H I N PINNING PNP transistor in hermetically-sealed, sub-miniature, SOT 173 and SOT 173X

Contextual Info: Philips Semiconductors k b S 3 T 3 1 Q 031535 530 • A P X ^Pfoductspecification PNP 4 GHz wideband transistor BFQ32C N AUER PHILIPS/DISCRETE DESCRIPTION blE » PINNING PNP transistor in hermetically-sealed, sub-miniature, SOT173 and SOT 173X micro-stripline envelopes. It is

BFQ32C

Abstract: SOT173 philips 586 BFP96 wideband transistor sot173 SOT-173 MICROWAVE TRANSISTOR philips 586
Contextual Info: Philips Semiconductors ^^53^31 Q D 31535 S3G A P X ^^Productspecification PNP 4 GHz wideband transistor BFQ32C N A PIER P H I L I P S / D I S C R E T E DESCRIPTION b^E » PINNING PNP transistor in hermetically-sealed, sub-miniature, SOT173 and SOT173X micro-stripline envelopes. It is

BDT65

Abstract: IOM10 BDT64 BDT64A BDT64B BDT64C BDT65B TRANSISTORE MSA-06
Contextual Info: J BDT65; 65A BDT65B; 65C SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial base transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier and switching applications. TO-220 plastic envelope. PNP complements are BDT64; BDT64A; BDT64B and BDT64C.