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    583 TRANSISTOR Search Results

    583 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    583 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IMD16A

    Abstract: No abstract text available
    Text: Transistors IMD16A 96-473-IMD16 583


    Original     		PDF IMD16A 96-473-IMD16) IMD16A

    C2385

    Abstract: transistor c2385 transistor c2385 Data Sheet Q62702-C2385
    Text: BCR 583 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=10kΩ,R2=10kΩ Type Marking Ordering Code Pin Configuration BCR 583 XMs 1=B Q62702-C2385 Package 2=E 3=C SOT-23 Maximum Ratings


    Original     		PDF Q62702-C2385 OT-23 Nov-27-1996 C2385 transistor c2385 transistor c2385 Data Sheet Q62702-C2385

    583 transistor

    Abstract: No abstract text available
    Text: BCR 583 PNP Silicon Digital Transistor 3 • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=10kΩ, R2 =10kΩ 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR 583 XMs Pin Configuration 1=B 2=E Package


    Original     		PDF VPS05161 EHA07183 OT-23 Oct-19-1999 583 transistor

    NPN general purpose silicon transistors

    Abstract: Transistors General UMZ1N transistor 526 c114e 2SC411K transistors C124E dual npn 500ma 581 PNP
    Text: Transistors FMC6A IMD1A 94S-830-AC115E (96-458-AC124T) 575 Transistors IMD10A (96-555-IMD10) 582 Transistors IMD16A (96-473-IMD16) 583 Transistors IMD8A IMD9A (94S-902-AC144T) (94S-904-AC114Y) 581 Transistors General purpose transistor (dual transistors)


    Original     		PDF 94S-830-AC115E) 96-458-AC124T) IMD10A 96-555-IMD10) IMD16A 96-473-IMD16) 94S-902-AC144T) 94S-904-AC114Y) 2SA1036K 2SC411K NPN general purpose silicon transistors Transistors General UMZ1N transistor 526 c114e transistors C124E dual npn 500ma 581 PNP

    Untitled

    Abstract: No abstract text available
    Text: TECHNICAL DATA NPN POWER TRANSISTOR SILICON AMPLIFIER Qualified per MIL-PRF-19500/ 583 Devices Qualified Level 2N5681 JAN JANTX JANTXV 2N5682 MAXIMUM RATINGS TA = 25° C unless otherwise noted 2N5681 Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage


    Original     		PDF MIL-PRF-19500/ 2N5681 2N5682

    2N5681

    Abstract: 2N5682 SILICON AMPLIFIER TRANSISTOR Qualified per MIL-PRF
    Text: TECHNICAL DATA NPN POWER TRANSISTOR SILICON AMPLIFIER Qualified per MIL-PRF-19500/583 Devices Qualified Level 2N5681 JAN JANTX JANTXV 2N5682 MAXIMUM RATINGS TA = 25° C unless otherwise noted 2N5681 Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage


    Original     		PDF MIL-PRF-19500/583 2N5681 2N5682 2N5681 2N5682 SILICON AMPLIFIER TRANSISTOR Qualified per MIL-PRF

    2N5682

    Abstract: 2N5681 equivalent C-2688 MIL-PRF19500 2N5679 2N5681 JANTX2N5682 ST1113
    Text: The documentation process conversion measures necessary to comply with this revision shall be completed by 21 November 1999. INCH-POUND MIL-PRF-19500/583A 21 August 1999 SUPERSEDING MIL-S-19500/583 23 April 1990 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON AMPLIFIER,


    Original     		PDF MIL-PRF-19500/583A MIL-S-19500/583 2N5681 2N5682 MIL-PRF-19500. 2N5681 equivalent C-2688 MIL-PRF19500 2N5679 JANTX2N5682 ST1113

    Untitled

    Abstract: No abstract text available
    Text: FOR IMMEDIATE RELEASE Joseph Liu Chief Financial Officer Diodes Incorporated 805 446-4800 Philip Bourdillon/Ken Kline Corporate Communications KBL Associates, Inc. (818) 583-8091 DIODES ANNOUNCES $23 MILLION CREDIT FACILITY TO BE BETTER POSITIONED FOR FUTURE GROWTH


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: FOR IMMEDIATE RELEASE Joseph Liu Chief Financial Officer Diodes Incorporated 805 446-4800 Phillip Bourdillon/Ken Kline Corporate Communications KBL Associates, Inc. (818) 583-8091 DIODES REPORTS SECOND QUARTER RESULTS Westlake Village, California — July 26, 1996 — Diodes Incorporated (ASE: DIO)


    Original     		PDF

    ON Semiconductor marking 821

    Abstract: No abstract text available
    Text: SIEMENS BCR 583 PNP Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=10ki2,R2=10kS2 Type Marking Ordering Code Pin Configuration BCR 583 XMs 1=B Q62702-C2385 Package 2=E 3=C SOT-23 Maximum Ratings


    OCR Scan     		PDF 10ki2 10kS2) Q62702-C2385 OT-23 III11 ON Semiconductor marking 821

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 583 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R i=10kii,R 2=10kii Type Marking Ordering Code Pin Configuration BCR 583 XMs Q62702-C2385 1=B Package 2=E 3=C SOT-23


    OCR Scan     		PDF 10kii 10kii) Q62702-C2385 OT-23

    2N5303

    Abstract: SPT5303 75 watt npn switching transistor
    Text: 2N5303, SPT5303 200 WATT NPN SILICON POWER TRANSISTOR S o lid State Devices Incorporated 14830 Valley View Avenue La Mirada, California 90638 Telephone 213 921-9660 T W X -910-583-4807 _ • H F E .15-60 @10 Amps


    OCR Scan     		PDF 2N5303, SPT5303 TWX-910-583-4807 2N5303 SPT5303 300/js, 75 watt npn switching transistor

    L0050A

    Abstract: 2N5096A lt 0210 2N5091A 2N5093A 2N5094A
    Text: HIGH VOLTAGE SILICON DIFFUSED PNP TRANSISTORS TYPES 2N5091A, 2N5093A, 2N5094A 2N5096A Solid State Devices Incorporated 14 830 Valley V iew Avenue La Mirada, California 9 0 638 Telephone 213 9 2 1 -9 6 6 0 TW X -910-583-4807 Z


    OCR Scan     		PDF TWX-910-583-4807 2N5091A, 2N5093A, 2N5094A 2N5096A 50mAdc 25mAdc, 150Vdc 100mAde, L0050A 2N5096A lt 0210 2N5091A 2N5093A 2N5094A

    MD14 package

    Abstract: md14 SPT6145 300VDC
    Text: Solid State Devices Incorporated 14830 Valley View La Mirada, C alifornia 90638 SPT6145 Telephone 213 921-9660 T W X -9 10-583-4807 GENERAL INFORMATION: PNP High Voltage Transistor primarily used for amplifiers and switching circuits. Packaged in a MD14 Case.


    OCR Scan     		PDF SPT6145 TWX-910-583-4807 10raa* 300Vdc MD14 package md14 SPT6145

    Untitled

    Abstract: No abstract text available
    Text: SOLID STATE DEVICES INC PRELIMINARY DATA SHEET 5-1-85 1BE -D |fi3bbDll 0DDB0b3 b | T " 33 06 - SFT6800 3 AMP HIGH VOLTAGE NPN TRANSISTOR 800 VOLTS CASE STYLE W JEDEC TO—5 " 14830 Valley View Avenue La Mirada. California 90638 213 921-9660 TW X 910-583-4807


    OCR Scan     		PDF SFT6800 2N5662 2N5663 SFT6900

    Untitled

    Abstract: No abstract text available
    Text: SOLID STATE DEVICES INC 12E D |ö3t.bDll 0002077 t> | PRELIMINARY DATA SHEET SFT502 AND SFT504 <5^xrirjV| svs& m 'll 5 AMP HIGH SPEED NPN TRANSISTOR 200 VOLTS 14830 Valley View Avenue La Mirada, California 90638 213 921-9660 TW X 910-583-4807 FAX 213-921-2396


    OCR Scan     		PDF SFT502 SFT504 SFT501 SFT503

    j201

    Abstract: 2N5663 SFT6800 SFT6900
    Text: Xoo SFT6900 = = ) Lie'll 3 AMP HIGH VOLTAGE PNP TRANSISTOR 500 VOLTS 14830 Valley View Avenue La Mirada. California 90638 213) 921-9660 TWX 910-583-4807 FAX 213-921-2396 CASE STYLE W JEDECTO—5 FEATURES • • • • • • BVCEO TO 400 VOLTS LOW SATURATION VOLTAGE


    OCR Scan     		PDF SFT6900 SFT6800 2N5663 j201 SFT6800

    Untitled

    Abstract: No abstract text available
    Text: SOLI» STATE DEVICES INC Preliminary Data Sheet 12E D jô3btiDll GDDEQÛT S Jj SFT5659 15 AMR r- 33-0? 14830 Valley View Avenue La Mirada. California 90638 213 921-9660 TWX 910-583-4807 FAX 213-921-2396 HIGH SPEED NPN TRANSISTOR 150 VOLTS CASE STYLE TO-59


    OCR Scan     		PDF SFT5659 150ns 100MHz SFT61S9 10CIHz) 10Vdc, 25Vdc. 250mAdc, 1N5S02

    Untitled

    Abstract: No abstract text available
    Text: SOLI» STATE DEVICES INC 15E D |i3ttQll DD02071 S | T - 33-11 2N5002 AND 2N5004 5 AMP HIGH SPEED NPN TRANSISTOR 100 VOLTS CASE STYLE X JEDEC TO—59 ALL TERMINALS ISOLATED FROM CASE 14830 Valley View Avenue La Mirada. California 90638 213 921-9660 TW X 910-583-4807


    OCR Scan     		PDF DD02071 2N5002 2N5004 2N5003 2N5005

    la 1213

    Abstract: B2272 LS1500 SPT1010 SFT1010 SFT1012 SFT1014
    Text: PRELIMINARY DATA SHEET Xno \^>5' SFT1010 SFT1012 SFT1014 100 AMP HIGH ENERGY NPN TRANSISTORS V ceo 14830 Valley View Avenue La Mirada. California 90638 213 921-9660 TW X 910-583-4807 FAX 213-921-2396 100, 120, 140 VOLTS CASE STYLE R FEATURES T O -3 WITH .060 PINS


    OCR Scan     		PDF SFT1010 SFT1012 SFT1014 400mJ SFT10U 20Vdc, la 1213 B2272 LS1500 SPT1010

    transistor scans sheet

    Abstract: SFT501 SFT502 SFT503 SFT504 VC80 B178H
    Text: XOQIH^ PRELIMINARY DATA SHEET SFT501 AND SFT503 5 AMP HIGH SPEED PNP TRANSISTOR 200 VOLTS CASE STYLE W JEDEC TO—5 14830 Valley View Avenue La Mirada. California 90638 213 921-9660 TW X 910-583-4807 FAX 213-921-2396 FEATURES • • • • • • • •


    OCR Scan     		PDF SFT501 SFT503 SFT502 SFT504 transistor scans sheet SFT503 SFT504 VC80 B178H

    2N5097

    Abstract: 2N5092 2N5094 2N5095 2N5096 10cf
    Text: X o i& U M UDII 2N5095 AND 2N5097 1 AMP HIGH VOLTAGE NPN TRANSISTOR 500-600 VOLTS CASE STYLE W JEDEC TO—5 I. P 330 .320 14830 Valley View Avenue La Mirada, California 90638 P. O. Box 577 La Mirada, California 90637 213 921-9660 TWX 910-583-4807 FEATURES


    OCR Scan     		PDF 2N5095 2N5097 2N5094 2N5096 2N5092 2N5096 10cf

    Untitled

    Abstract: No abstract text available
    Text: SOLID STATE DEVICES INC 1SE D GOOEllb 1 | ~T~~33- 11 PRELIMINARY DATA SHEET SFT6900 3 AMP HIGH VOLTAGE PNP TRANSISTOR 500 VOLTS CASE STYLE W JEDECTO—5 14830 Valley View Avenue La Mirada. California 90638 213 921-9660 TWX 910-583-4807 FAX 213-921-2396 FEATURES


    OCR Scan     		PDF SFT6900 SFT6800 2N5663

    Untitled

    Abstract: No abstract text available
    Text: » EVICES INC HE * 0002107 Q | PRFJ iIMINARY DATA SHEET ^ SFT2010 SFT2012 SFT2014 200 AMP HIGH ENERGY NPN TRANSISTOR V ceo 14830 Valley View Avenue La Mirada. California 90638 213 921-9660 TW X 910-583-4807 FA X 213-921-2396 100, 120, 140 VOLTS CASE STYLE R


    OCR Scan     		PDF SFT2010 SFT2012 SFT2014 800mJ SFT2010 SFT2012