591 SMD TRANSISTOR Search Results

smd transistor pnp 591

Abstract: CMMT591 smd transistor 591
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMMT591 SILICON PLANAR EPITAXIAL TRANSISTORS PNP transistor Marking CMMT = 591 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE

smd transistor pnp 591

Abstract: CMMT591
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMMT591 SILICON PLANAR EPITAXIAL TRANSISTORS PNP transistor Marking CMMT = 591 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMMT591 SILICON PLANAR EPITAXIAL TRANSISTORS PNP transistor Marking CMMT = 591 PACKAGE OUTLINE DETAILS

smd transistor pnp 591

Abstract: SMD IC ts 4141 CMMT591 smd transistor 591 MARKING SMD pnp TRANSISTOR ec
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMMT591 SILICON PLANAR EPITAXIAL TRANSISTORS PNP transistor Marking CMMT = 591 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company CMMT591 SOT-23 Formed SMD Package SILICON PLANAR EPITAXIAL TRANSISTORS PNP transistor Marking CMMT = 591 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS

relay 12v 200 ohm

Abstract: TX2-L2-12 591 smd transistor Matsua Electric Works relay smd transistor 079
Contextual Info: TESTING 2 AMP. HIGH CAPACITY RELAY WITH HIGH SURGE VOLTAGE & HIGH BREAKDOWN VOLTAGE 15 .591 7.4 .291 FEATURES 7.4 .291 15 .591 • Breakdown voltage between contacts and coil: 2,000 V • Surge withstand between contacts and coil: 2,500 V • High contact capacity: 2 A 30 V DC

TXD2-3V

Abstract: 5 pin relay 12v 5 V DC RELAY TXD2-2M-12V relay 9v 5v relay 5 pin 8 pin SMD relay 5 pin 12v relay 5 pin 12v relay datasheet 5 pin relay 6v
Contextual Info: TX-D HIGH INSULATION RELAYS Conforming to the supplementary insulation class of EN Standards EN41003 15 .591 TX-D RELAYS UL File No.: E43149 CSA File No.: LR26550 7.4 .291 8.2 .323 15 .591 • The use of gold-clad twin crossbar contacts ensures high contact

smd transistor 591

Abstract: 591 smd transistor Transistor smd marking 1a sot-23 TRANSISTOR SMD 1a 9 FMMT591
Contextual Info: Transistors IC SMD Type Medium Power Transistor FMMT591 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 1 0.55 Low equivalent on-resistance. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base

Transistor smd 338

Abstract: TXD2-2M-12V LR26550 TXD2-12V TXD2-24V TXD2-H-12V TXD2-H-24V TXD2-L-12V TXD2-L-24V
Contextual Info: TX-D HIGH INSULATION RELAYS Conforming to the supplementary insulation class of EN Standards EN41003 15 .591 TX-D RELAYS UL File No.: E43149 CSA File No.: LR26550 7.4 .291 8.2 .323 15 .591 • The use of gold-clad twin crossbar contacts ensures high contact

Contextual Info: Transistors IC Transistor SMD Type Product specification FMMT591 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 1 0.55 Low equivalent on-resistance. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01

smd transistor pnp 591

Contextual Info: Transistors IC SMD Type PNP Silicon Planar Medium Power Transistor FZT591 SOT-223 Unit: mm +0.2 3.50-0.2 +0.2 -0.2 • Features ● Power Collector dissipation: PC=2W ● Continuous Collector Current: IC=-1A +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 6.50 +0.2

TX2-L2-12

Abstract: DC60W Transistor smd 338 TX2S-24
Contextual Info: TESTING 2 A CAPACITY RELAY WITH HIGH SURGE VOLTAGE & HIGH BREAKDOWN VOLTAGE 15 .591 7.4 .291 8.2 .323 15 .591 7.4 .291 8.4 .331 mm inch TX RELAYS FEATURES • Breakdown voltage between contacts and coil: 2,000 V • Surge withstand between contacts and coil: 2,500 V

TX2-L2-12

Abstract: 071oz
Contextual Info: TESTING 2 A CAPACITY RELAY WITH HIGH SURGE VOLTAGE & HIGH BREAKDOWN VOLTAGE 15 .591 7.4 .291 8.2 .323 15 .591 7.4 .291 8.4 .331 mm inch TX RELAYS FEATURES • Breakdown voltage between contacts and coil: 2,000 V • Surge withstand between contacts and coil: 2,500 V

Contextual Info: TX TESTING 2 A CAPACITY RELAY WITH HIGH SURGE VOLTAGE & HIGH BREAKDOWN VOLTAGE 15 .591 7.4 .291 15 .591 8.2 .323 TX RELAYS FEATURES 7.4 .291 8.4 .331 • Breakdown voltage between contacts and coil: 2,000 V • Surge withstand between contacts and coil: 2,500 V

tx2 relay

Contextual Info: TX TESTING 2 A CAPACITY RELAY WITH HIGH SURGE VOLTAGE & HIGH BREAKDOWN VOLTAGE 15 .591 7.4 .291 15 .591 8.2 .323 TX RELAYS FEATURES 7.4 .291 8.4 .331 • Breakdown voltage between contacts and coil: 2,000 V • Surge withstand between contacts and coil: 2,500 V

RELAY NAIS TX2

Abstract: NAIS tx2-L2-5 TX2S-48 datasheet relay NAIS 5v 5 pin nais relay 24V r relay TX2-L2-12 TX2S-12
Contextual Info: TX TESTING 2 A CAPACITY RELAY WITH HIGH SURGE VOLTAGE & HIGH BREAKDOWN VOLTAGE 15 .591 7.4 .291 15 .591 8.2 .323 TX RELAYS FEATURES 7.4 .291 8.4 .331 • Breakdown voltage between contacts and coil: 2,000 V • Surge withstand between contacts and coil: 2,500 V

relay tx-2

Abstract: TX2-24V 300108J TX2-12V TX2-48V TX2-H-12V TX2-H-24V TX2-H-48V TX2-L-12V TX2-L2-12V
Contextual Info: TX TESTING 2 A CAPACITY RELAY WITH HIGH SURGE BREAKDOWN VOLTAGE & HIGH BREAKDOWN VOLTAGE FEATURES 1. 2,000 V breakdown voltage between contact and coil The body block construction of the coil that is sealed at formation offers a high breakdown voltage of 2,000 V between

Contextual Info: • bh53131 00E3T77 STT « A P X N A PIER PHIL IPS/D ISCR ETE BST120 b7E D P-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel vertical D-MOS transistor in SOT89 envelope and intended for use in relay, high-speed and line-transformer drivers, using SMD technology.

TXD2-2M-5V

Abstract: TXD2-3V TXD2-5V txd2 TXD2-2M-12V
Contextual Info: TX-D TESTING HIGH INSULATION RELAYS Conforming to the supplementary insulation class of EN Standards (EN41003 TX-D RELAYS FEATURES 15 .591 8.2 .323 15 .591 • 2,000 V breakdown voltage between contact and coil. • Outstanding surge resistance. Surge withstand between open contacts:

MARKING SMD transistor 12X

Abstract: smd transistor marking HA TRANSISTOR SMD MARKING 2 HA transistor marking 12x transistor smd marking BA 26 smd 37e BST120 smd transistor 591 D-MOS transistor p-channel smd transistor marking 2U
Contextual Info: • ^53^31 aG23T77 5TT « A P X N AMER P H I L I P S / D I S C R E T E BST120 b7E T> P-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel vertical D-MOS transistor in SOT89 envelope and intended for use in relay, high-speed and line-transformer drivers, using SMD technology.

bvc62

Abstract: transistor BD 139 Transistor 5332 bvc62 smd philips 2322 734 UT70-25 smd transistor k2 2222 500 16641 transistor BD B1 SMD u 9330
Contextual Info: Philips Semiconductors Product specification UHF linear push-pull power transistor FEATURES BLV859 PINNING SOT262B • Double internal input and output matching for an optimum wideband capability and high gain • Polysilicon emitter ballasting resistors for an optimum

TXD2-2M-5V

Abstract: NAIS TXD2-12V NAIS Relay TXD2 TXD2-3V datasheet relay NAIS 5v 5 pin TXD2-5V NAIS Relay 5v txd2 nais relay 24V 10 A NAIS Relay 4.5v
Contextual Info: TX-D TESTING HIGH INSULATION RELAYS Conforming to the supplementary insulation class of EN Standards (EN41003 TX-D RELAYS FEATURES • Approved to the supplementary insulation class in the EN standards (EN41003). The insulation distance between the contact and coil meet the supplementary

smd transistor pnp 591

Abstract: smd transistor xf philips 2322 734 transistor bd139 philips SMD resistor 805 smd transistor 912 smd L17 npn bd139 smd SMD transistor L17 912 smd transistor
Contextual Info: Philips Semiconductors Product specification UHF linear push-pull power transistor FEATURES BLV857 PINNING SOT324B • Internal input matching for an optimum wideband capability and high gain • Polysilicon emitter ballasting resistors for an optimum temperature profile

Contextual Info: BUZ 72L I nf ineon technologic» SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level Type ^DS h flDS on Package Ordering Code BUZ 72 L 100 V 10 A 0.2 £2 TO-220 AB C67078-S1327-A2 Maximum Ratings Parameter Symbol