5A 40 V SCHOTTKY DIOD Search Results
5A 40 V SCHOTTKY DIOD Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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CUHS15S40 |
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Schottky Barrier Diode (SBD), 40 V, 1.5 A, US2H |
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CUHS15S30 |
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Schottky Barrier Diode (SBD), 30 V, 1.5 A, US2H |
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CUHS15F30 |
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Schottky Barrier Diode (SBD), 30 V, 1.5 A, US2H |
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CUHS20S40 |
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Schottky Barrier Diode (SBD), 40 V, 2 A, US2H |
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CUHS10F60 |
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Schottky Barrier Diode (SBD), 60 V, 1 A, US2H |
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5A 40 V SCHOTTKY DIOD Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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AP6901GSM
Abstract: AP-690
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AP6901GSM AP6901GSM AP-690 | |
schottky diode 60V 5A
Abstract: themal wave
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TP801C06 500ns, schottky diode 60V 5A themal wave | |
AP4816GSMContextual Info: AP4816GSM RoHS-compliant Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement DUAL N-CHANNEL MOSFET WITH SCHOTTKY DIODE CH-1 S1/D2 S1/D2 ▼ DC-DC Converter Suitable S1/D2 D1 ▼ Fast Switching Performance SO-8 G2 S2/A S2/A G1 CH-2 Description |
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AP4816GSM AP4816GSM | |
DO-214 diode
Abstract: Hitachi DSA00175
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HRF502A ADE-208-245B DO-214 DO-214 DO-214 diode Hitachi DSA00175 | |
Contextual Info: FYPF1010DN FYPF1010DN Features • Low forward voltage drop. • High frequency properties and switching speed. • For use in switched mode power supplies, free wheeling diode, and polarity protection applications. • Guard ring for over-voltage protection. |
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FYPF1010DN O-220F | |
LT3976H
Abstract: LT3976IMSE#PBF LT3976EMSE
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LT3976 500mV DFN-10, MSOP-10E DFN-16, MSOP-16E LT3976H LT3976IMSE#PBF LT3976EMSE | |
Contextual Info: INTERNATIONAL RECTIFIER fc,£E » • 4flSS4SS ÜÜ17D70 711 PD-2.311 kitemational S Rectifier sow qosf 5o w q o 6 f SCHOTTKY RECTIFIER 5.5 Amp Major Ratings and Characteristics Characteristics Description/Features 50W Q .F Units S.5 A 50/60 V IpsM tp -5 p s s in e |
OCR Scan |
17D70 -40to125 55M52 017D73 50WQ05F 50WQ06F | |
Contextual Info: VS-50WQ06FNPbF Vishay Semiconductors Schottky Rectifier, 5.5 A FEATURES Base cathode 4, 2 • Popular D-PAK outline • Small foot print, surface mountable • Low forward voltage drop • High frequency operation 1 Anode D-PAK 3 Anode • Guard ring for enhanced ruggedness and long term |
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VS-50WQ06FNPbF 2002/95/EC VS-50WQ06FNPbF 18-Jul-08 | |
Contextual Info: Ordering number:EN4572 SBA50-04Y Schottky Barrier Diode Twin Type • Cathode Common 40V, 5A Rectifier Applications Package Dimensions · High frequency rectification (switching regulators, converters, choppers). unit:mm 1262A [SBA50-04Y] Features · Low forward voltage (VF max=0.55V). |
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EN4572 SBA50-04Y SBA50-04Y] SBA50-04Y-applied | |
sb50Contextual Info: Ordering number:EN2684B SB50-18K Schottky Barrier Diode Twin Type • Cathode Common 180V, 5A Rectifier Applications Package Dimensions · High frequency rectification (switching regulators, converters, choppers). unit:mm 1199B [SB50-18K] Features · Low forward voltage (VF max=0.85V). |
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EN2684B SB50-18K 1199B SB50-18K] O-220MF sb50 | |
Contextual Info: Schottky Barrier Diode RB228NS100 Datasheet lDimensions Unit : mm lApplication lLand size figure (Unit : mm) Switching power supply RB2281 NS100 lFeatures 1 1) Cathode common dual type 2) Low IR LPDS 3) High reliability 4) AEC-Q101 qualified lConstruction |
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RB228NS100 RB2281 NS100 AEC-Q101 O263S R1102A | |
Contextual Info: LT3472 Boost and Inverting DC/DC Converter for CCD Bias DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ U ■ Generates 15V at 20mA, –8V at 50mA from a Li-Ion Cell Internal Schottky Diodes VIN Range: 2.2V to 16V Output Voltages Up to ±34V Capacitor-Programmable Soft-Start |
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LT3472 10-Lead LT3464 LT3467/LT3467A 3472f | |
Contextual Info: Schottky Barrier Diode RBQ10NS45A Datasheet lDimensions Unit : mm lApplication lLand size figure (Unit : mm) General rectification BQ10NS 45A lFeatures 1 1) Cathode common dual type (LPDS) LPDS 2) Low IR lStructure lConstruction Silicon epitaxial planar |
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RBQ10NS45A BQ10NS O263S R1102A | |
Contextual Info: SK24A - SK215A 2.0 Amp. Surface Mount Schottky Barrier Rectifier Current 2.0 A Voltage 40 V to 150 V DO-214AC / SMA FEATURES Low profile package Ideal for automated placement Low power losses, high efficiency High surge current capability Guarding for overvoltage protection |
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SK24A SK215A DO-214AC AEC-Q101 2011/65/EU 2002/96/EC J-STD-020, DO-214AC MIL-STD-750 May-12 | |
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Contextual Info: TSPB15U50S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss/ High efficiency - High forward surge capability - Ideal for automated placement |
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TSPB15U50S J-STD-020 2011/65/EU 2002/96/EC D1408064 | |
TO-252AA Mechanical dimensions
Abstract: VS-50WQ04
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VS-50WQ04FN-M3 2002/95/EC O-252AA) J-STD-020, VS-50WQ04FN-M3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. TO-252AA Mechanical dimensions VS-50WQ04 | |
Contextual Info: VS-50WQ06FNPbF Vishay Semiconductors Schottky Rectifier, 5.5 A FEATURES Base cathode 4, 2 • Popular D-PAK outline • Small foot print, surface mountable • Low forward voltage drop 1 Anode D-PAK TO-252AA 3 Anode • High frequency operation • Guard ring for enhanced ruggedness and long term |
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VS-50WQ06FNPbF O-252AA) 2002/95/EC J-STD-020, VS-50WQ06FNPbF 11-Mar-11 | |
Contextual Info: VS-50WQ04FN-M3 Vishay Semiconductors Schottky Rectifier, 5.5 A FEATURES Base cathode 4, 2 1 Anode D-PAK TO-252AA • Low forward voltage drop • Guard ring for enhanced ruggedness and long term reliability • Halogen-free according to IEC 61249-2-21 definition |
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VS-50WQ04FN-M3 2002/95/EC O-252AA) J-STD-020, VS-50WQ04FN-M3 11-Mar-11 | |
Contextual Info: Schottky Barrier Diode Datasheet RB088T150 External dimensions Unit : mm Application Structure Switching power supply (2) 4.5±0.3 0.1 2.8±0.2 0.1 10.0±0.3 0.1 Features 1) Cathode common dual type (1) 3) High reliability |
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RB088T150 AEC-Q101 O220FN R1102A | |
Contextual Info: TSP15U50S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Ideal for automated placement |
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TSP15U50S J-STD-020 2011/65/EU 2002/96/EC O-277A JESD22-B102 D1309033 | |
RC5036M
Abstract: RC5036 schematic diagram 12v dc to 3.5v dc regulator 45v variable Power Supply Schematic Diagram 16-SOIC FDB6030L MBRB1545CT MMBT2222A
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RC5036 RC5036 RC5036M schematic diagram 12v dc to 3.5v dc regulator 45v variable Power Supply Schematic Diagram 16-SOIC FDB6030L MBRB1545CT MMBT2222A | |
AO4456Contextual Info: AO4456 30V N-Channel MOSFET SRFET General Description TM Product Summary SRFETTM AO4456 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load |
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AO4456 AO4456 | |
Contextual Info: VS-50WQ06FN-M3 Vishay Semiconductors Schottky Rectifier, 5.5 A FEATURES Base cathode 4, 2 1 Anode D-PAK TO-252AA • Low forward voltage drop • Guard ring for enhanced ruggedness and long term reliability 3 Anode • Halogen-free according to IEC 61249-2-21 |
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VS-50WQ06FN-M3 O-252AA) J-STD-020, 2002/95/EC VS-50WQ06FN-M3 11-Mar-11 | |
Contextual Info: VS-50WQ03FNPbF Vishay Semiconductors Schottky Rectifier, 5.5 A FEATURES Base cathode 4, 2 • Popular D-PAK outline • Small foot print, surface mountable • Low forward voltage drop 1 Anode D-PAK TO-252AA 3 Anode • High frequency operation • Guard ring for enhanced ruggedness and long term |
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VS-50WQ03FNPbF O-252AA) 2002/95/EC J-STD-020, VS-50WQ03FNPbF 11-Mar-11 |