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    5A 40 V SCHOTTKY DIOD Search Results

    5A 40 V SCHOTTKY DIOD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUHS15S40
    Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 40 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15S30
    Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 30 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15F30
    Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 30 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS20S40
    Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 40 V, 2 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS10F60
    Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1 A, US2H Visit Toshiba Electronic Devices & Storage Corporation

    5A 40 V SCHOTTKY DIOD Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    AP6901GSM

    Abstract: AP-690
    Contextual Info: AP6901GSM RoHS-compliant Product Advanced Power Electronics Corp. DUAL N-CHANNEL MOSFET WITH SCHOTTKY DIODE CH-1 S1/D2 S1/D2 S1/D2 G1 ▼ Simple Drive Requirement ▼ DC-DC Converter Suitable ▼ Fast Switching Performance SO-8 S2/A G2 D1 D1 CH-2 Description


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    AP6901GSM AP6901GSM AP-690 PDF

    schottky diode 60V 5A

    Abstract: themal wave
    Contextual Info: TP801C06 5A (60V / 5A ) Outline drawings, mm SCHOTTKY BARRIER DIODE K-Pack(L) Features JEDEC Low VF EIAJ Super high speed switching Connection diagram High reliability by planer design Applications High speed power switching 2 1 3 Maximum ratings and characteristics


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    TP801C06 500ns, schottky diode 60V 5A themal wave PDF

    AP4816GSM

    Contextual Info: AP4816GSM RoHS-compliant Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement DUAL N-CHANNEL MOSFET WITH SCHOTTKY DIODE CH-1 S1/D2 S1/D2 ▼ DC-DC Converter Suitable S1/D2 D1 ▼ Fast Switching Performance SO-8 G2 S2/A S2/A G1 CH-2 Description


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    AP4816GSM AP4816GSM PDF

    DO-214 diode

    Abstract: Hitachi DSA00175
    Contextual Info: HRF502A Silicon Schottky Barrier Diode for Rectifying ADE-208-245B Z Rev. 2 Nov. 1994 Features • Low forward voltage drop and suitable for high effifiency rectifying. • DO-214 is suitable for high density surface mounting and high speed assembly. Ordering Information


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    HRF502A ADE-208-245B DO-214 DO-214 DO-214 diode Hitachi DSA00175 PDF

    Contextual Info: FYPF1010DN FYPF1010DN Features • Low forward voltage drop. • High frequency properties and switching speed. • For use in switched mode power supplies, free wheeling diode, and polarity protection applications. • Guard ring for over-voltage protection.


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    FYPF1010DN O-220F PDF

    LT3976H

    Abstract: LT3976IMSE#PBF LT3976EMSE
    Contextual Info: Electrical Specifications Subject to Change LT3976 40V, 5A, 2MHz Step-Down Switching Regulator with 3.3µA Quiescent Current FEATURES n n n n n n n n n n n n n n n DESCRIPTION Ultralow Quiescent Current: 3.3 A IQ at 12VIN to 3.3VOUT Low Ripple Burst Mode Operation


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    LT3976 500mV DFN-10, MSOP-10E DFN-16, MSOP-16E LT3976H LT3976IMSE#PBF LT3976EMSE PDF

    Contextual Info: INTERNATIONAL RECTIFIER fc,£E » • 4flSS4SS ÜÜ17D70 711 PD-2.311 kitemational S Rectifier sow qosf 5o w q o 6 f SCHOTTKY RECTIFIER 5.5 Amp Major Ratings and Characteristics Characteristics Description/Features 50W Q .F Units S.5 A 50/60 V IpsM tp -5 p s s in e


    OCR Scan
    17D70 -40to125 55M52 017D73 50WQ05F 50WQ06F PDF

    Contextual Info: VS-50WQ06FNPbF Vishay Semiconductors Schottky Rectifier, 5.5 A FEATURES Base cathode 4, 2 • Popular D-PAK outline • Small foot print, surface mountable • Low forward voltage drop • High frequency operation 1 Anode D-PAK 3 Anode • Guard ring for enhanced ruggedness and long term


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    VS-50WQ06FNPbF 2002/95/EC VS-50WQ06FNPbF 18-Jul-08 PDF

    Contextual Info: Ordering number:EN4572 SBA50-04Y Schottky Barrier Diode Twin Type • Cathode Common 40V, 5A Rectifier Applications Package Dimensions · High frequency rectification (switching regulators, converters, choppers). unit:mm 1262A [SBA50-04Y] Features · Low forward voltage (VF max=0.55V).


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    EN4572 SBA50-04Y SBA50-04Y] SBA50-04Y-applied PDF

    sb50

    Contextual Info: Ordering number:EN2684B SB50-18K Schottky Barrier Diode Twin Type • Cathode Common 180V, 5A Rectifier Applications Package Dimensions · High frequency rectification (switching regulators, converters, choppers). unit:mm 1199B [SB50-18K] Features · Low forward voltage (VF max=0.85V).


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    EN2684B SB50-18K 1199B SB50-18K] O-220MF sb50 PDF

    Contextual Info: Schottky Barrier Diode RB228NS100 Datasheet lDimensions Unit : mm lApplication lLand size figure (Unit : mm) Switching power supply RB2281 NS100 lFeatures 1 1) Cathode common dual type 2) Low IR LPDS 3) High reliability 4) AEC-Q101 qualified lConstruction


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    RB228NS100 RB2281 NS100 AEC-Q101 O263S R1102A PDF

    Contextual Info: LT3472 Boost and Inverting DC/DC Converter for CCD Bias DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ U ■ Generates 15V at 20mA, –8V at 50mA from a Li-Ion Cell Internal Schottky Diodes VIN Range: 2.2V to 16V Output Voltages Up to ±34V Capacitor-Programmable Soft-Start


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    LT3472 10-Lead LT3464 LT3467/LT3467A 3472f PDF

    Contextual Info: Schottky Barrier Diode RBQ10NS45A Datasheet lDimensions Unit : mm lApplication lLand size figure (Unit : mm) General rectification BQ10NS 45A lFeatures 1 1) Cathode common dual type (LPDS) LPDS 2) Low IR lStructure lConstruction Silicon epitaxial planar


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    RBQ10NS45A BQ10NS O263S R1102A PDF

    Contextual Info: SK24A - SK215A 2.0 Amp. Surface Mount Schottky Barrier Rectifier Current 2.0 A Voltage 40 V to 150 V DO-214AC / SMA FEATURES • Low profile package • Ideal for automated placement • Low power losses, high efficiency • High surge current capability • Guarding for overvoltage protection


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    SK24A SK215A DO-214AC AEC-Q101 2011/65/EU 2002/96/EC J-STD-020, DO-214AC MIL-STD-750 May-12 PDF

    Contextual Info: TSPB15U50S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss/ High efficiency - High forward surge capability - Ideal for automated placement


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    TSPB15U50S J-STD-020 2011/65/EU 2002/96/EC D1408064 PDF

    TO-252AA Mechanical dimensions

    Abstract: VS-50WQ04
    Contextual Info: VS-50WQ04FN-M3 Vishay Semiconductors Schottky Rectifier, 5.5 A FEATURES Base cathode 4, 2 1 Anode D-PAK TO-252AA • Low forward voltage drop • Guard ring for enhanced ruggedness and long term reliability • Halogen-free according to IEC 61249-2-21 definition


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    VS-50WQ04FN-M3 2002/95/EC O-252AA) J-STD-020, VS-50WQ04FN-M3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. TO-252AA Mechanical dimensions VS-50WQ04 PDF

    Contextual Info: VS-50WQ06FNPbF Vishay Semiconductors Schottky Rectifier, 5.5 A FEATURES Base cathode 4, 2 • Popular D-PAK outline • Small foot print, surface mountable • Low forward voltage drop 1 Anode D-PAK TO-252AA 3 Anode • High frequency operation • Guard ring for enhanced ruggedness and long term


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    VS-50WQ06FNPbF O-252AA) 2002/95/EC J-STD-020, VS-50WQ06FNPbF 11-Mar-11 PDF

    Contextual Info: VS-50WQ04FN-M3 Vishay Semiconductors Schottky Rectifier, 5.5 A FEATURES Base cathode 4, 2 1 Anode D-PAK TO-252AA • Low forward voltage drop • Guard ring for enhanced ruggedness and long term reliability • Halogen-free according to IEC 61249-2-21 definition


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    VS-50WQ04FN-M3 2002/95/EC O-252AA) J-STD-020, VS-50WQ04FN-M3 11-Mar-11 PDF

    Contextual Info: Schottky Barrier Diode Datasheet RB088T150 External dimensions Unit : mm Application Structure Switching power supply (2) 4.5±0.3 0.1 2.8±0.2 0.1 10.0±0.3 0.1 Features 1) Cathode common dual type (1) 3) High reliability


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    RB088T150 AEC-Q101 O220FN R1102A PDF

    Contextual Info: TSP15U50S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Ideal for automated placement


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    TSP15U50S J-STD-020 2011/65/EU 2002/96/EC O-277A JESD22-B102 D1309033 PDF

    RC5036M

    Abstract: RC5036 schematic diagram 12v dc to 3.5v dc regulator 45v variable Power Supply Schematic Diagram 16-SOIC FDB6030L MBRB1545CT MMBT2222A
    Contextual Info: www.fairchildsemi.com RC5036 Dual Adjustable Voltage Regulator Controller Features Description • Combines switching regulator and low dropout linear regulator in single chip • Linear regulator on/off control • Each output voltage adjustable from 1.5V to 3.6V


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    RC5036 RC5036 RC5036M schematic diagram 12v dc to 3.5v dc regulator 45v variable Power Supply Schematic Diagram 16-SOIC FDB6030L MBRB1545CT MMBT2222A PDF

    AO4456

    Contextual Info: AO4456 30V N-Channel MOSFET SRFET General Description TM Product Summary SRFETTM AO4456 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load


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    AO4456 AO4456 PDF

    Contextual Info: VS-50WQ06FN-M3 Vishay Semiconductors Schottky Rectifier, 5.5 A FEATURES Base cathode 4, 2 1 Anode D-PAK TO-252AA • Low forward voltage drop • Guard ring for enhanced ruggedness and long term reliability 3 Anode • Halogen-free according to IEC 61249-2-21


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    VS-50WQ06FN-M3 O-252AA) J-STD-020, 2002/95/EC VS-50WQ06FN-M3 11-Mar-11 PDF

    Contextual Info: VS-50WQ03FNPbF Vishay Semiconductors Schottky Rectifier, 5.5 A FEATURES Base cathode 4, 2 • Popular D-PAK outline • Small foot print, surface mountable • Low forward voltage drop 1 Anode D-PAK TO-252AA 3 Anode • High frequency operation • Guard ring for enhanced ruggedness and long term


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    VS-50WQ03FNPbF O-252AA) 2002/95/EC J-STD-020, VS-50WQ03FNPbF 11-Mar-11 PDF