5A SMD MARKING Search Results

Contextual Info: bel Type C2Q Surface Mount Very Fast-Acting Chip Fuse C2Q OCÍ2013D HF 0603 Size RoHS 6 Compliant C2Q Series Fuse - Fast Acting - Small size,0603 SMD - Current rating from 250mA to 5A - Wide operating temperature range from -55°C to 125°C - Tape and Reel for automatic SMD placement

fuse smd code tp

Abstract: smd fuse marking code 20 fuse smd code c smd fuse marking H smd fuse marking code G fuse smd code Y smd fuse marking code ae 1 smd fuse marking code 1 smd fuse marking code 32 fuse smd code G
Contextual Info: bel 1206 Size RoHS 6 Compliant Type C1S Surface Mount Slow Blow Chip Fuse C1S Apr2013D ÆùusCC C1S Series Fuse Slow Blow Small size,1206 SMD Current rating from 750mA to 5A Wide operating temperature range from -55°C to 125°C Tape and Reel for automatic SMD placement

5g smd transistor

Abstract: SMD Transistor 5f SMD TRANSISTOR MARKING 5H smd transistor 5c sot-23
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC807 BC808 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistor Marking BC807 = 5D BC807–16 = 5A BC807–25 = 5B BC807-40 = 5C BC808 = 5H

smd transistor 5c sot-23

Abstract: smd transistor 5d sot-23 smd 5H transistor SMD TRANSISTOR MARKING 5H SMD TRANSISTOR MARKING 5c bc807 5g smd transistor Transistor - CL 100 SMD TRANSISTOR MARKING 5G 5A SMD MARKING SOT23 BC807-40
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC807 BC808 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistor Marking BC807 = 5D BC807–16 = 5A BC807–25 = 5B BC807-40 = 5C BC808 = 5H

smd 5H transistor

Abstract: 5g smd transistor SMD TRANSISTOR MARKING 5c bc807 SMD TRANSISTOR MARKING 5H SMD TRANSISTOR MARKING 5c SMD TRANSISTOR MARKING 5G 5B smd transistor data smd transistor 5c sot-23 BC807 smd 5F smd transistor
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC807 BC808 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistor Marking BC807 = 5D BC807–16 = 5A BC807–25 = 5B BC807-40 = 5C BC808 = 5H

SMD TRANSISTOR MARKING 5c

Abstract: transistor 5d smd smd 5H transistor 5g smd transistor smd transistor marking 5D 5B smd transistor data smd transistor 5c SMD diode marking 5D SMD Transistor 5f SMD diode MARKING 5h
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package BC807 BC808 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistor Marking BC807 = 5D BC807–16 = 5A BC807–25 = 5B BC807-40 = 5C BC808 = 5H BC808–16 = 5E

DIODE smd marking AA

Contextual Info: Rectiier Diode Surface Mounting Device Single Diode OUTLINE DE5VE40 Unit : mm Weight : 0.326g typ. Package E-pack 400V 5A ①④ • SMD • • ④ 品名略号 Type No. 5VE4 ロット記号（例） Date code • SMD • High ESD Capability • High Io Rating Small-PKG

Contextual Info: Transistors IC SMD Type Product specification FCX1151A Features 2W power dissipation. 5A peak pulse current. Excellent HFE characteristics up to 5 Amps. Extremely low saturation voltage E.g. 60mv Typ. Extremely low equivalent on-resistance. RCE sat 66mÙ at 3A.

2SB1120

Contextual Info: Transistors SMD Type PNP Epitaxial Planar Silicon Transistors 2SB1120 Features Low collector-to-emitter saturation voltage : VCE sat max=-0.45V. Large current capacity : IC=-2.5A, ICP=-5A. Very small size making it easy to provide highdensity, small-sized hybrid IC’

smd diode 6D

Abstract: SMD diode KL smd diode ww 1 3q marking diode smd diode 600v 1a DE5L60 marking 6D smd diode dp 3q smd marking diode
Contextual Info: Super Fast Recovery Diode Single Diode WWW OUTLINE Package : E-pack DE5L60 U nit! mm Weight 0.326g Typ M 600V 5A ï'2'4 Feature • SMD • SMD • High Voltage • trr-50ns • trr-50ns i.m v f ^ 5 I — 6D — 01 Main Use • PFC • PFC(Power Factor Correction)

MARKING SMD PNP TRANSISTOR 2a

Abstract: smd transistor 2A FCX1151A MARKING 25 SMD PNP TRANSISTOR TRANSISTOR SMD PNP 1A
Contextual Info: Transistors SMD Type PNP Silicon Power Switching Transistor FCX1151A Features 2W power dissipation. 5A peak pulse current. Excellent HFE characteristics up to 5 Amps. Extremely low saturation voltage E.g. 60mv Typ. Extremely low equivalent on-resistance. RCE sat 66mÙ at 3A.

2SD1949

Abstract: R Y SMD TRANSISTOR
Contextual Info: Transistors IC SMD Type Medium Power Transistor 2SD1949 Features High current. IC=5A Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage

npn smd 2a

Abstract: FZT869
Contextual Info: Transistors SMD Type NPN Silicon Planar High Current High Performance Transistor FZT869 SOT-223 +0.2 3.50-0.2 0.1max +0.05 0.90-0.05 +0.2 6.50-0.2 Extremely low equivalent on-resistance; RCE(sat)44mÙ at 5A. 7 Amp continuous collector current (20 Amp peak).

Contextual Info: Transistors SMD Type NPN Silicon Planar High Current High Performance Transistor FZT849 SOT-223 +0.2 3.50-0.2 0.1max +0.05 0.90-0.05 +0.2 6.50-0.2 Extremely low equivalent on-resistance; RCE(sat)36mÙ at 5A. 7 Amp continuous collector current (20 Amp peak).

wc smd diode

Abstract: smd marking wc DE5S4M DIODE smd marking MO DIODE 56 SMD
Contextual Info: Schottky Barrier Diode wnnm o u t l i n e Single Diode DE5S4M U nit! mm Package : E-pack Weight 0.326g T yp 40V 5A Feature • SMD • SMD • P rrsm T’y V 3 > x ( S lil i • Prrsm Rating Typ«* No. 1 High lo Rating -Small-PKG • 'J '5 L '* ! g ; S § a

Contextual Info: Super Fast Recovery Diode Single Diode mtmm o u t lin e Package ! E-pack DE5L60 U n ii Im m 600V 5A Feature • SMD • High Voltage • trr=50ns SMD ia U E E trr=50ns • • • • • PFC - \s wm.OA FA I 51l 6 Dill*rtidi M a in U se PFC(Power Factor Correction)

Contextual Info: Transistors SMD Type Product specification FZT869 SOT-223 +0.2 3.50-0.2 0.1max +0.05 0.90-0.05 +0.2 6.50-0.2 Extremely low equivalent on-resistance; RCE sat 44mÙ at 5A. 7 Amp continuous collector current (20 Amp peak). +0.1 3.00-0.1 +0.15 1.65-0.15 Features

6a smd transistor

Abstract: fzt851 npn smd 2a smd transistor 2A smd transistor MARKING 2A npn transistor smd 6a transistor marking 6A smd 6a transistor
Contextual Info: Transistors SMD Type NPN Silicon Planar High Current High Performance Transistor FZT851 SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 Extremely low equivalent on-resistance; RCE(sat)44mÙ at 5A. +0.1 3.00-0.1 6 Amps continuous current, up to 20 Amps peak current.

Contextual Info: SMD BALUN SERIES ABT-6-XXX | | | | | | | | | | | | | | | OUTLINE DRAWING: STANDARD SPECIFICATIONS: Part No ABT-6- Turns Operating Frequency MHz Double Balanced Mixer 50-400 1 1A 10-1000 2 2A 8-8000 3 3A 6-6000 4 4A 5-500 5 5A 400-1300 2 6A Frequency Mixer

Contextual Info: SMD Type Product specification FZT851 SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 Extremely low equivalent on-resistance; RCE sat 44mÙ at 5A. +0.1 3.00-0.1 6 Amps continuous current, up to 20 Amps peak current. +0.15 1.65-0.15 +0.2 3.50-0.2 +0.2 6.50-0.2 Features

diode smd JS 8

Contextual Info: Schottky Barrier Diode Twin Diode mtm OUTLINE Package : E-pack DE5SC4M Unit-mm Weight 0.326g Typ 40V 5A Feature >SMD 1Tj=150°C 1 P r r s m Rating 1 High lo Rating -Small-PKG • SMD • Tj=150°C • P r r s m T ’A ' ^ V S ' i f S l i E Main Use » D C /D C o

Contextual Info: Transistors IC SMD Type Product specification 2SD1484K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 0.55 High current. IC=5A . 2 Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA. +0.1 0.95-0.1

transistor smd YR

Abstract: yq smd transistor sot-23 Marking yr marking YQ 2SD1484K
Contextual Info: Transistors IC SMD Type Medium Power Transistor 2SD1484K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Low saturation voltage, typically VCE sat =0.1V at IC / IB=150mA / 15mA. 0.55 High current.(IC=5A). 2 +0.1 0.95-0.1

FMMT734

Abstract: smd transistor 5k
Contextual Info: Transistors SMD Type Power Darlington Transistor FMMT734 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 Extremely low VCE sat at high current (1A) 0.55 Very high hFE at high current (5A) +0.1 1.3-0.1 +0.1 2.4-0.1 625mW Power Dissipation 0.4 3 2 +0.1