5A SMD TRANSISTOR Search Results

Contextual Info: Transistors IC SMD Type Product specification FCX1151A Features 2W power dissipation. 5A peak pulse current. Excellent HFE characteristics up to 5 Amps. Extremely low saturation voltage E.g. 60mv Typ. Extremely low equivalent on-resistance. RCE sat 66mÙ at 3A.

2SB1120

Contextual Info: Transistors SMD Type PNP Epitaxial Planar Silicon Transistors 2SB1120 Features Low collector-to-emitter saturation voltage : VCE sat max=-0.45V. Large current capacity : IC=-2.5A, ICP=-5A. Very small size making it easy to provide highdensity, small-sized hybrid IC’

MARKING SMD PNP TRANSISTOR 2a

Abstract: smd transistor 2A FCX1151A MARKING 25 SMD PNP TRANSISTOR TRANSISTOR SMD PNP 1A
Contextual Info: Transistors SMD Type PNP Silicon Power Switching Transistor FCX1151A Features 2W power dissipation. 5A peak pulse current. Excellent HFE characteristics up to 5 Amps. Extremely low saturation voltage E.g. 60mv Typ. Extremely low equivalent on-resistance. RCE sat 66mÙ at 3A.

ja smd

Abstract: CZT127 KZT127
Contextual Info: Transistors IC SMD Type Surface Mount PNP Silicon Power Darlington Transistor KZT127 CZT127 SOT-223 Features Unit: mm +0.2 3.50-0.2 6.50 +0.2 -0.2 Low voltage (max. 100V). +0.1 3.00-0.1 +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 High current (max. 5A). +0.2

2SD1949

Abstract: R Y SMD TRANSISTOR
Contextual Info: Transistors IC SMD Type Medium Power Transistor 2SD1949 Features High current. IC=5A Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage

smd npn darlington

Abstract: CZT122 KZT122
Contextual Info: Transistors IC SMD Type Surface Mount NPN Silicon Power Darlington Transistor KZT122 CZT122 SOT-223 Features Unit: mm +0.2 3.50-0.2 6.50 High current (max. 5A). Low voltage (max. 100V). +0.1 3.00-0.1 +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 +0.2 -0.2 +0.2

npn smd 2a

Abstract: FZT869
Contextual Info: Transistors SMD Type NPN Silicon Planar High Current High Performance Transistor FZT869 SOT-223 +0.2 3.50-0.2 0.1max +0.05 0.90-0.05 +0.2 6.50-0.2 Extremely low equivalent on-resistance; RCE(sat)44mÙ at 5A. 7 Amp continuous collector current (20 Amp peak).

Contextual Info: Transistors SMD Type NPN Silicon Planar High Current High Performance Transistor FZT849 SOT-223 +0.2 3.50-0.2 0.1max +0.05 0.90-0.05 +0.2 6.50-0.2 Extremely low equivalent on-resistance; RCE(sat)36mÙ at 5A. 7 Amp continuous collector current (20 Amp peak).

Contextual Info: Transistors IC SMD Type Product specification 2SD1949 Features High current. IC=5A Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage

Contextual Info: Transistors SMD Type Product specification FZT869 SOT-223 +0.2 3.50-0.2 0.1max +0.05 0.90-0.05 +0.2 6.50-0.2 Extremely low equivalent on-resistance; RCE sat 44mÙ at 5A. 7 Amp continuous collector current (20 Amp peak). +0.1 3.00-0.1 +0.15 1.65-0.15 Features

5g smd transistor

Abstract: SMD Transistor 5f SMD TRANSISTOR MARKING 5H smd transistor 5c sot-23
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC807 BC808 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistor Marking BC807 = 5D BC807–16 = 5A BC807–25 = 5B BC807-40 = 5C BC808 = 5H

smd transistor 5c sot-23

Abstract: smd transistor 5d sot-23 smd 5H transistor SMD TRANSISTOR MARKING 5H SMD TRANSISTOR MARKING 5c bc807 5g smd transistor Transistor - CL 100 SMD TRANSISTOR MARKING 5G 5A SMD MARKING SOT23 BC807-40
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC807 BC808 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistor Marking BC807 = 5D BC807–16 = 5A BC807–25 = 5B BC807-40 = 5C BC808 = 5H

6a smd transistor

Abstract: fzt851 npn smd 2a smd transistor 2A smd transistor MARKING 2A npn transistor smd 6a transistor marking 6A smd 6a transistor
Contextual Info: Transistors SMD Type NPN Silicon Planar High Current High Performance Transistor FZT851 SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 Extremely low equivalent on-resistance; RCE(sat)44mÙ at 5A. +0.1 3.00-0.1 6 Amps continuous current, up to 20 Amps peak current.

smd 5H transistor

Abstract: 5g smd transistor SMD TRANSISTOR MARKING 5c bc807 SMD TRANSISTOR MARKING 5H SMD TRANSISTOR MARKING 5c SMD TRANSISTOR MARKING 5G 5B smd transistor data smd transistor 5c sot-23 BC807 smd 5F smd transistor
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC807 BC808 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistor Marking BC807 = 5D BC807–16 = 5A BC807–25 = 5B BC807-40 = 5C BC808 = 5H

FZT853

Abstract: npn smd 2a smd transistor 2A 6a smd transistor
Contextual Info: Transistors SMD Type NPN Silicon Planar High Current Transistor FZT853 SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 Features Extremely low equivalent on-resistance; RCE sat 44mÙ at 5A +0.1 3.00-0.1 +0.15 1.65-0.15 +0.2 3.50-0.2 6.50 +0.2 -0.2 +0.2 0.90-0.2 +0.3

Contextual Info: Transistors IC SMD Type Product specification 2SD1484K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 0.55 High current. IC=5A . 2 Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA. +0.1 0.95-0.1

transistor smd YR

Abstract: yq smd transistor sot-23 Marking yr marking YQ 2SD1484K
Contextual Info: Transistors IC SMD Type Medium Power Transistor 2SD1484K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Low saturation voltage, typically VCE sat =0.1V at IC / IB=150mA / 15mA. 0.55 High current.(IC=5A). 2 +0.1 0.95-0.1

FMMT734

Abstract: smd transistor 5k
Contextual Info: Transistors SMD Type Power Darlington Transistor FMMT734 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 Extremely low VCE sat at high current (1A) 0.55 Very high hFE at high current (5A) +0.1 1.3-0.1 +0.1 2.4-0.1 625mW Power Dissipation 0.4 3 2 +0.1

Contextual Info: Transistors SMD Type Product specification FMMT734 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 Extremely low VCE sat at high current (1A) 0.55 Very high hFE at high current (5A) +0.1 1.3-0.1 +0.1 2.4-0.1 625mW Power Dissipation 0.4 3 2 +0.1 0.95-0.1

Contextual Info: Transistors SMD Type Product specification FZT853 SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 Features Extremely low equivalent on-resistance; RCE sat 44mÙ at 5A +0.1 3.00-0.1 +0.15 1.65-0.15 +0.2 3.50-0.2 6.50 +0.2 -0.2 +0.2 0.90-0.2 +0.3 7.00-0.3 6 Amps continuous current, up to 20 Amps peak current

Contextual Info: SMD Type Product specification FZT851 SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 Extremely low equivalent on-resistance; RCE sat 44mÙ at 5A. +0.1 3.00-0.1 6 Amps continuous current, up to 20 Amps peak current. +0.15 1.65-0.15 +0.2 3.50-0.2 +0.2 6.50-0.2 Features

DNT04

Abstract: DNT04S0A0R03NFA DNT04S0A0S03NFA DNT04S0A0S05NFA
Contextual Info: FEATURES High Efficiency: 93%@ 5Vin, 3.3V/5A out Small size and low profile: 0.80” x 0.45” x 0.27” SMD 0.90” x 0.40” x 0.25” (SIP) Standard footprint and pinout Resistor-based trim Output voltage programmable from 0.75V to 3.63V via external resistors

DNT04

Abstract: DNT04S0A0R03NFA DNT04S0A0S03NFA DNT04S0A0S05NFA
Contextual Info: FEATURES High Efficiency: 93%@ 5Vin, 3.3V/5A out Small size and low profile: 0.80” x 0.45” x 0.27” SMD 0.90” x 0.40” x 0.25” (SIP) Standard footprint and pinout Resistor-based trim Output voltage programmable from 0.75V to 3.3V via external resistors

Contextual Info: FEATURES High Efficiency: 92%@ 5Vin, 3.3V/5A out Small size and low profile: 0.80” x 0.45” x 0.27” SMD 0.90” x 0.40” x 0.25” (SIP) Standard footprint and pinout Resistor-based trim Output voltage programmable from 0.75V to 3.3V via external resistors