5A SOT89 Search Results

FCX1051A

Abstract: FCX1151A DSA003684
Contextual Info: SOT89 PNP SILICON POWER SWITCHING TRANSISTOR FCX1151A ISSUE 1 - NOVEMBER 1998 FEATURES * 2W POWER DISSIPATION * * * * 5A Peak Pulse Current Excellent HFE Characteristics up to 5 Amps Extremely Low Saturation Voltage E.g. 60mv Typ. Extremely Low Equivalent On-resistance;

Contextual Info: SOT89 PNP SILICON POWER SWITCHING TRANSISTOR FCX1151A ISSUE 1 - NOVEMBER 1998 FEATURES * 2W POWER DISSIPATION * * * * 5A Peak Pulse Current Excellent HFE Characteristics up to 5 Amps Extremely Low Saturation Voltage E.g. 60mv Typ. Extremely Low Equivalent On-resistance;

Marking P35

Abstract: transistor p35 Marking P35 sot89 SOT89 transistor marking 5A DPLS350Y Diodes P35
Contextual Info: DPLS350Y 50V PNP LOW SATURATION POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > -50V   IC = -3A High Continuous Collector Current  Case Material: Molded Plastic, “Green” Molding Compound  ICM up to -5A Peak Pulse Current 

TS16949

Abstract: ZXTN25020DZ ZXTP25020DZ ZXTP25020DZTA SOT89 transistor marking 5A
Contextual Info: ZXTP25020DZ 20V PNP high gain transistor in SOT89 Summary BVCEO > -20V BVECO > -4V IC cont = 5A VCE(sat) < -65mV @ -1A RCE(sat) = 39m⍀ PD = 2.4W Complementary part number ZXTN25020DZ Description C Packaged in the SOT89 outline this new low saturation 20V PNP

Contextual Info: ZXTP25020DZ 20V PNP high gain transistor in SOT89 Summary BVCEO > -20V BVECO > -4V IC cont = 5A VCE(sat) < -65mV @ -1A RCE(sat) = 39m⍀ PD = 2.4W Complementary part number ZXTN25020DZ Description C Packaged in the SOT89 outline this new low saturation 20V PNP

SOT89 transistor marking 851

Contextual Info: A Product Line of Diodes Incorporated Green ZXTN2010Z 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > 60V  Case: SOT89  IC = 5A High Continuous Current  Case Material: Molded Plastic. “Green” Molding Compound.

Contextual Info: DPLS350Y 50V PNP LOW SATURATION POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > -50V   IC = -3A High Continuous Collector Current   ICM up to -5A Peak Pulse Current    2W Power Dissipation Low Saturation Voltage VCE sat < -180mV @ 1A

TS16949

Abstract: ZXTN25040DZ ZXTN25040DZTA ZXTP25040DZ ZXTN
Contextual Info: ZXTN25040DZ 40V, SOT89, NPN medium power transistor Summary BVCEX > 130V BVCEO > 40V BVECO > 6V IC cont = 5A VCE(sat) < 60mV @ 1A RCE(sat) = 38m⍀ PD = 2.4W Complementary part number ZXTP25040DZ Description C Packaged in the SOT89 outline this new low saturation 40V NPN

2DD2098

Abstract: KP3Q 4A SOT89 MARKING CODE
Contextual Info: 2DB1386Q/R 20V PNP MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > -20V    IC = -5A high Continuous Current Low saturation voltage VCE sat < -1V @ -4A  Case Material: Molded Plastic, "Green” Molding Compound.  UL Flammability Classification Rating 94V-0

transistor marking 6A

Abstract: ZXTN2010Z ZXTN2010ZTA
Contextual Info: ZXTN2010Z 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 60V : RSAT = 30m ; IC = 5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various

MARKING 851

Abstract: SOT89 MARKING CODE 5A SOT89 transistor marking 851
Contextual Info: A Product Line of Diodes Incorporated Green ZXTN2010Z 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • • • • • • • • • • • • • • • BVCEO > 60V High current capability Max Continuous Current IC = 5A

Contextual Info: ZXTN2010Z 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 60V : RSAT = 30m ; IC = 5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various

npn 120v 10a transistor

Abstract: ZX5T851Z ZX5T851ZTA
Contextual Info: ZX5T851Z 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 60V : RSAT = 30m ; IC = 5A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC

ZXTN2010ZTA

Abstract: ZXTN2010Z 0019E
Contextual Info: ZXTN2010Z 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 60V : RSAT = 30m ; IC = 5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various

Contextual Info: MIC2176 5A Evaluation Board High Input Voltage, Synchronous Buck Controllers Featuring Adaptive On-Time Control Hyper Speed ControlTM Family General Description The Micrel MIC2176-1/-2/-3 is a family of constantfrequency, synchronous buck controllers featuring a

AZ1084T

Abstract: AZ1084T-ADJE1 AZ1084T-ADJ AZ1084
Contextual Info: Product Brief VOLTAGE 5A LOW DROPOUT DETECTOR LINEAR REGULATOR Description AZ70XX AZ1084 Parametric Table The AZ1084 isseries a series dropout positive voltage The AZ70XX ICs of arelow under voltage detectors with regulators with a maximum dropout of 1.5V

ZXTN25060BZTA

Abstract: TS16949 ZXTN25060BZ SOT89 transistor marking 5A marking 1c7
Contextual Info: ZXTN25060BZ 60V, SOT89, NPN medium power transistor Summary BVCEX > 150V BVCEO > 60V BVECO > 6V IC cont = 5A VCE(sat) < 70mV @ 1A RCE(sat) = 48m⍀ PD = 2.4W Description C Packaged in the SOT89 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in

TSB1386

Abstract: TSB1386CP TSB1386CY
Contextual Info: TSB1386 Low Frequency PNP Transistor BVCEO = - 20V Ic = - 5A VCE SAT , = - 0.35V(typ.) @Ic / Ib = - 4A / - 0.1A Pin assignment: 1. Base 2. Collector 3. Emitter Features — Ordering Information Low VCE (SAT). Part No. — Excellent DC current gain characteristics

SOT89 transistor marking 5A

Abstract: 2SB1386R marking BHR SOT89 transistor marking 4A 2SB1386 2SD2098 2SB1386-R bhr sot-89 marking BHp SOT-23
Contextual Info: 2SB1386 -5A, -30V PNP Silicon Low Frequency Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-89 FEATURES Low VCE sat Excellent DC current gain characteristics Complements the 2SD2098 4 1 2

mosfet vgs 5v 5a

Abstract: SGM2306A power mosfet 5a 20v
Contextual Info: SGM2306A 5A, 30V,RDS ON 35mΩ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description SOT-89 The SGM2306A utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD965/A NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT TRANSISTOR  FEATURES * Collector current up to 5A * UTC 2SD965: Collector-Emitter voltage up to 20 V * UTC 2SD965A: Collector-Emitter voltage up to 30 V  APPLICATIONS

2SD965

Abstract: 2SD965AL 2SD965A 2sd965l 2sd965 transistor sot 89 2sd965 2SD965AG
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD965/A NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT TRANSISTOR „ FEATURES * Collector current up to 5A * UTC 2SD965: Collector-Emitter voltage up to 20 V * UTC 2SD965A: Collector-Emitter voltage up to 30 V „ APPLICATIONS

2SD965AL-AB3-R

Abstract: 2SD965 2sd965 transistor 2sd965l ab3r sot 89 2sd965
Contextual Info: UNISONIC TECHNOLOGIES CO.,LTD. 2SD965/A NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES 1 * Collector current up to 5A * 2SD965 : Collector-Emitter voltage up to 20 V * 2SD965A : Collector-Emitter voltage up to 30 V SOT-89

SOT89 transistor marking 5A

Abstract: BTC5103M3 MARKING 5A SOT-89
Contextual Info: CYStech Electronics Corp. Spec. No. : C651M3 Issued Date : 2003.11.07 Revised Date : Page No. : 1/4 NPN Epitaxial Planar Transistor BTC5103M3 Features • High IC, IC DC =5A • Low VCE(sat), 0.3V typically • Good current gain linearity Symbol Outline BTC5103M3