5B4 IR Search Results

Contextual Info: NEC ELECTRONICS INC fc.EE D • b427S25 D03ÛD17 5b4 « N E C E PRELIMINARY DATA SHEET NEC LASER DIODE MODULE NDL5653P ELECTRON DEVICE 1 550 nm OPTICAL FIBER COMMUNICATIONS InGaAsP PHASE-SHIFTED DFB-DC-PBH LASER DIODE MODULE DESCRIPTION NDL5653P is a 1 550 nm phase-shifted DFB Distributed Feed-Back laser diode Butterfly package module with optical isola­

Contextual Info: 4 PART NO. I 3 2 1 CA-XXDSID-X-X-SR REVI5IQN5 DESCRIPTION INITIAL RELEA5E 5EE ECR IS46 5EE DQ 5787_ C I 5EE D ,B L A N K STRAIN DQ 5B4-9_ DL l-ZZ-99 DL Z-Z-00 A.J. A.J. 5EE DQ 47 I 1_ CP IZ-OI

NDL5653P

Abstract: NDL5600 NDL5600D NDL5600D1 NDL5604P NDL5650 NDL5650D1 NEC LASER DIODE PIN DIP 10 gb laser diode 5b4 diode
Contextual Info: N E C L.2E T> ELECTRONICS INC NEC b4Z7S2S D03ÛD17 5b4 « N E C E PRELIMINARY DATA SHEET LASER DIODE MODULE NDL5653P ELECTRON DEVICE 1 550 nm OPTICAL FIBER COMMUNICATIONS InGaAsP PHASE-SHIFTED DFB-DC-PBH LASER DIODE MODULE D ES C R IP TIO N N D L5653P is a 1 550 nm phase-shifted DPB Distributed Feed-Back laser diode B utterfly package module with optical isola­

oz960

Abstract: 16b3 zener diode Zener 13B3 zener diode 7A3 SN0210 6R-P10 16B1 zener diode Zener Diode 13B3 q59 apple C5763
Contextual Info: <XR_PAGE_TITLE> 8 7 6 5 2 3 4 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN TABLE OF CONTENTS B A COVER PAGE BLOCK DIAGRAM, SYSTEM, POWER & PCB INFO

OZ960

Abstract: 22B4 diode ZENER c5763 C1904 7A3 zener diode UL796 258C5 58A5 zener diode 7A3 9A2 zener diode
Contextual Info: <XR_PAGE_TITLE> 8 7 6 5 2 3 4 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN C B A DESCRIPTION OF CHANGE 279015 ENGINEERING RELEASED

TS802C09

Abstract: ze 003 ic
Contextual Info: TS802C09 10A SCHOTTKY BARRIER DIODE I Outline Drawing • Features Connection Diagram • Surface mount device • Lo w V f • Super high speed switching • High reliability by planer design H Applications • High speed power switching ■ Maximum Ratings & Characteristics

Contextual Info: DOMINANT TM DATA SHEET : Opto Technologies PrimaxN4014 Innovating Illumination 60 InGaN Warm White : NGF-WSG Primax Synonymous with function and performance, enter the Primax, the new era of high intensity illumination in LED. With its high flux output and high

diode 6a6

Abstract: 6A6 DIODE RJ48 BTS 132 SMD NTH069A3 rj48 to db9 smd 5b1 smd transistor 6c5 2D4 SMD DS10
Contextual Info: DS26503DK T1/E1/J1 BITS Element Design Kit www.maxim-ic.com GENERAL DESCRIPTION FEATURES The DS26503DK is an easy-to-use evaluation board for the DS26503 T1/E1/J1 BITS element. The DS26503DK is intended to be used as a stand-alone design kit. The board is complete with a DS26503

smd transistor 6c5

Abstract: 6A6 DIODE XCF01SV020C smd transistor 8a7 Transistor 6C5 5b1 smd transistor diode 6a6 C65 004 RJ48 smd 5b1
Contextual Info: DS26503DK T1/E1/J1 BITS Element Design Kit www.maxim-ic.com GENERAL DESCRIPTION FEATURES The DS26503DK is an easy-to-use evaluation board for the DS26503 T1/E1/J1 BITS element. The DS26503DK is intended to be used as a stand-alone design kit. The board is complete with a DS26503

7B423

Contextual Info: ADVANCE INFORMATION PI74ALVTC16344

Contextual Info: Provisional Data Sheet No. PD - 9.1716 International IO R Rectifier IRFE9130 dv/dt R A TED J ANTX2N6849U HEXFET TRANSISTOR JANTXV2N6849U JANS2N6849U [REF:M IL-PRF-19500/564] R E P E T IT IV E A V A LA N CH E A N D P-CHANNEL Product Summary -1 OOVolt, 0.30Q, HEXFET

5B4 RECTIFIER

Contextual Info: 4035452 DDlSflTS Ô55 International [k ] Rectifier PD-9.634A IINR IRLD120 bSE D INTERNATIONAL RECTIFIER HEXFET® Pow er M O S F E T Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Logic-Level Gate Drive RDS on Specified at V g s = 4 V & 5V

Contextual Info: P D - 9.1586 International IOR Rectifier 4 30 S IRG PC PRELIMINARY Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter

Contextual Info: m m m Chataworth, CA m Micmsemi UF4001GP THRU UF4007GP Prog ress P ow ered b y Technology 9261 Owensmouth Ave. Chatsworth, Ca 91311 Phone: 818 701-4933 Fax: (818)701-4939 1 Amp Glass Passivated Ultra Fast Recovery Rectifier 50 to 1000 Volts Features • •

6A6 DIODE

Abstract: RJ48 DS26504 diode 6a6 smd 5c2 12D3 C65 004 EB1100 smd 5b1 smd transistor 6c5
Contextual Info: DS26504DK T1/E1/J1/64K/8KCC BITS Element Design Kit www.maxim-ic.com GENERAL DESCRIPTION FEATURES The DS26504DK is an easy-to-use evaluation board for the DS26504 T1/E1/J1/64K/8KCC BITS element. The DS26504DK is intended to be used as a standalone design kit. The board is complete with a

XCF01SV020

Abstract: 6A6 DIODE 12b3 diode saronix 88 xtal osc 08 6B5 diode C65 004 6c5 g 6C5 smd diode 6a6 0805 led bicolor
Contextual Info: DS26502DK T1/E1/J1/64KCC Bits Element Design Kit www.maxim-ic.com GENERAL DESCRIPTION FEATURES The DS26502DK is an easy-to-use evaluation board for the DS26502 T1/E1/J1/64KCC BITS element. The DS26502DK is intended to be used as a standalone design kit. The board is complete with a

diode 6a6

Abstract: C65 004 5d4 diode MAX1675 12b3 diode smd 5b1 5B1 smd transistor rj48 to db9 IO103 smd transistor 6c5
Contextual Info: DS26504DK T1/E1/J1/64K/8KCC BITS Element Design Kit www.maxim-ic.com GENERAL DESCRIPTION FEATURES The DS26504DK is an easy-to-use evaluation board for the DS26504 T1/E1/J1/64K/8KCC BITS element. The DS26504DK is intended to be used as a standalone design kit. The board is complete with a

3RW2.5

Contextual Info: HIGH VOLTAGE, HIGH CURRENT, FAST RECOVERY SILICON RECTIFIER DIODES REVERSE RECOVERY TIME EDI Type PRV Volts 3W2 2,000 not applicable 3W2.5 2,500 not applicable 3W3 3,000 not applicable 3RW2 2,000 250 ns max. 3RW2.5 2,500 250 ns max. 3RW3 3,000 250 ns max.

Contextual Info: DOMINANT Opto Technologies Innovating Illumination TM DATA SHEET : PrimaxN4014 60 InGaN Warm White : NGF-WSG Primax Synonymous with function and performance, enter the Primax, the new era of high intensity illumination in LED. With its high flux output and high

Rd 2004

Abstract: AI005
Contextual Info: 2004 I FOR PARTS W / O MTG. EARS H MOUNTING EAR 2 PL. (PREBENT EAR SHOWN) SEE DETAIL 3 OR 4 • -^— A (19.6)^ ■34 (8 .6 ) 111 111 111 ■35 (8.9) \>mz .44 (11.2) ■145 (3.68) ■145 (3.68) \ r t L 1 Mï f \e S f ; St\ lç a OBSOLETE P/N UCR2002-0270

Contextual Info: DOMINANT TM DATA SHEET : Opto Technologies Primax5TM Innovating Illumination 150 InGaN Warm White : NTFF-FSC Primax TM Synonymous with function and performance, enter the Primax, the new era of high intensity illumination in LED. With its high flux output and high

MPB 131

Abstract: AMP 140 pin connector M68MEVB1632 M68300 M68HC16 M68MMDS1632 M68MPFB1632 MC68HC16Y3 MC68HC916Y3 4C4 ferrite
Contextual Info: M68MPB916Y3UM/D March 1998 M68MPB916Y3 MCU PERSONALITY BOARD USER’S MANUAL MOTOROLA, INC., 1998; All Rights Reserved Motorola reserves the right to make changes without further notice to any products herein to improve reliability, function or design. Motorola does not assume any liability arising out of the

Contextual Info: International i ^ Reclifier PD91340 IRF520NS preliminary HEXFET Power MOSFET • • • • • • Advanced Process Technology Surface Mount Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D escriptio n Fifth Generation HEXFETs from International Rectifier

MPB 131

Abstract: 4C4 ferrite 5B1 IR MPB 139 ferrite 4b1 puls p-f2 M68MPFBUM
Contextual Info: Freescale Semiconductor, Inc. CONTENTS CHAPTER 5 MAPI SUPPORT INFORMATION 5.1 INTRODUCTION . 5-1 5.2 MAPI BUS CONNECTORS. 5-1