5B4220S Search Results

PH1819-30

Abstract: PH1819
Contextual Info: Afa Wireless Power Transistor PH 1819-30 30 Watt, 1.78-1.90 GHz Features Outline Drawing • Designed for Linear Amplifier Applications • -30 dBc Typ 3rd IMD at 30 Watts PEP • Common Emitter Class AB Operation • Internal Input and Output Impedance Matching

transistor 1548 b

Abstract: transistor 1548 transistor D 1047
Contextual Info: Satellite C om m unications Power Transistor PH 1600-14 14 Watts, 1.55-1.65 GHz Features • • • • • Outline Drawing CW Operation Internal Impedance Matching Common Base Configuration Multilayer Metal / Ceramic Package Gold Metallization System Absolute Maximum Ratings at 25°C

Contextual Info: Ma Avionics Pulsed Power Transistor PH0912-20 Preliminary 20 Watts, 960-1215 MHz, 7 us Pulse, 50% Duty Features Outline Drawing • Designed for JTIDS Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation

T-301-34

Contextual Info: Afa Avionics Pulsed Power Transistor PH 1090-150S Preliminary 150 Watts, 1030-1090 MHz, 10 us Pulse, 1% Duty Features • • • • • • • • • Outline Drawing Designed for Short Pulse IFF Applications NPN Silicon Microwave Power Transistor Common Base Configuration

Contextual Info: Aßcm M an A M P company Low Noise GaAs MMIC Amplifier 1.2 -1.75 GHz MAAM12000-A1 CR-3 Features • • • • • Low Noise Figure: 1.35 dB High Gain: 26 dB No External Components Required DC Decoupled RF Input and Output Small, Low Cost 8-Lead Ceramic Package

2N6665

Abstract: MA42001-509 2N6665-509 MA42181-510 2n5054 RF NPN POWER TRANSISTOR C 10-50 GHZ 2N2857 Model MA42001 ma42 transistor 2N3953
Contextual Info: an A M P com pany General Purpose Low Noise Bipolar Transistors Features Case Styles • Low Noise Through 1.5 GHz • Hermetic Package • Can Be Screened to JAN, JANTX, JANTXV Levels Description The series of Silicon NPN bipolar transistors are designed