5F BC808 Search Results

bc807

Abstract: BC808 BC807-16 BC807-25 BC807-40 BC808-16 BC808-25 BC808-40 BC807B
Contextual Info: BC807 BC808 SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P transistor M arking BC807 = 5D BC807-16 = 5A BC807-25 = 5B BC807-40 = 5C BC808 = 5H BC808-16 = 5E BC808-25 = 5F BC808-40 = 5G PACKAGE OUTLINE DETAILS ALL DIM ENSIONS IN m m _3.0_ 2.8 0.14 0.09 0.48 0.38

Contextual Info: CDU BC807 BC808 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistor Marking BC807 = 5D BC807-16 = 5A BC807-25 = 5B BC807-40 = 5C BC808 = 5H BC808-16 = 5E BC808-25 = 5F BC808-40 = 5G PA CKA GE OU TLINE DETAILS A LL DIM ENSIO NS IN m m 3.0_ 2.8 0.14 0.09 0.48

8C808

Abstract: bc807 BC808-25 BC807-16 BC807-25 BC807-40 BC808 BC808-16 BC808-40 BC807 5C
Contextual Info: BC807 BC808 CDÎL SILICON PLANAR EPITAXIAL TRANSISTORS P-N -P transistor Marking BC807 = 5D BC807-16 = 5A BC807-25 = 5B BC807-40 = 5C BC808 = 5H BC808-16 = 5E BC808-25 = 5F BC808-40 = 5G PA C K A G E O U TLIN E D ETA ILS A L L D IM EN SIO N S IN m m 3.0 0.14

Contextual Info: BC807 BC808 HL SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P transistor M arking P A C K A G E O U T L IN E D E T A IL S A L L D IM E N S IO N S IN m m BC807 = 5D BC807-16 = 5A BC807-25 « 5B BC807-40 = 5C BC808 = 5H BC808-16 = 5E BC808-25 = 5F BC808-40 = 5G

Contextual Info: BC807 BC808 SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P transistor M ark in g P A C K A G E O U T L IN E D E T A IL S BC807 = 5D A L L D IM E N S IO N S IN m m B C 8 0 7 -1 6 - 5A B C 807-25 * 5B BC807-40 = 5C 3.0 BCB08 - 5H 2.8 0.48 B C 808-16 - 5E B C 808-25 = 5F

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 BC808 1. BASE TRANSISTOR PNP 2. EMITTER 3. COLLECTOR 1.0 FEATURES Power dissipation 2.4 1.3 mW (Tamb=25℃) 0.95 0.4 2.9 Collector current ICM: 500 mA Collector-base voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 BC808 1. BASE TRANSISTOR PNP 2. EMITTER 3. COLLECTOR mW (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current 800 mA ICM: Collector-base voltage 30 V V(BR)CBO:

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors BC808 SOT-23 TRANSISTOR PNP 1. BASE FEATURES z Suitable for AF-Driver stages and low power output stages z Complement to BC818 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

BC808

Abstract: BC818
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors BC808 SOT-23 TRANSISTOR PNP 1. BASE FEATURES z Suitable for AF-Driver stages and low power output stages z Complement to BC818 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Contextual Info: BC808 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — — Suitable for AF-Driver stages and low power output stages Complement to BC818 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage

Contextual Info: Transistors SMD Type Product specification KC808A BC808A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 High current gain. 0.55 High collector current. +0.1 1.3-0.1 +0.1 2.4-0.1 For general AF applications. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01

smd marking 5G

Abstract: MARKING 5E marking AF
Contextual Info: Transistors SMD Type PNP Silicon AF Transistors KC808A BC808A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 High current gain. 0.55 High collector current. +0.1 1.3-0.1 +0.1 2.4-0.1 For general AF applications. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05

BC808-16

Contextual Info: BC808 PNP General Purpose Transistor FEATURES • Suitable for AF-Driver stages and low power output stages MECHANICAL DATA • Case: SOT-23 Plastic • Lead Free in RoHS 2002/95/EC Compliant Maximum Ratings @ TA = 25℃ Characteristic Symbol Value Unit Collector-Base Voltage

Contextual Info: Transistors SOT23 B SOT23 Case PNP m iniR eel 4" O rder / " “ X N um ber ' Type 500 pcs. ^ PN P G eneral Purpose BC808-16 73-8081 BC808-25 73-8082 BC808-40 73-8083 m iniBag O rder N um ber 1 00 pcs. R a tin g s i*FE M in -M ax @ Ic VCE Part fj (M Hz) M arking

BC807

Abstract: BC808 BC808-16L BC807-16L BC807-25L BC807-40L BC808-25L BC808-40L
Contextual Info: MOTOROLA SC 1EE D I b3b?ES4 [1005002 ô I XSTRS/R F M A X I M U M R A T IN G S Sym bol BC807 BC808 Unit VCEO 45 25 V Collector-Base Voltage VCBO 50 30 V Emitter-Base Voltage vebo Rating Coliector-Emitter Voltage Collector Current — Continuous •c 5.0 5.0

Contextual Info: BC808 PNP General Purpose Transistor FEATURES • Suitable for AF-Driver stages and low power output stages MECHANICAL DATA • Case: SOT-23 Plastic • Case material: “Green” molding compound, UL flammability classification 94V-0, No Br. Sb. CI • Lead Free in RoHS 2002/95/EC Compliant

4501 ic

Abstract: npn transistors,pnp transistors BC807 BC807-16 BC808 BC808-16 BC817 BC818 marking 5A
Contextual Info: BC807, BC808 Small Signal Transistors PNP FEATURES ♦ PNP Silicon Epitaxial Planar Transistors SOT-23 .122 (3.1) .118 (3.0) .016 (0.4) Top View ♦ Especially suited for automatic insertion .056 (1.43) .052 (1.33) 3 in thick- and thin-film circuits. ♦ These transistors are subdivided into three groups -16,

marking 5A

Contextual Info: BC807, BC808 Small Signal Transistors PNP Features SOT-23 • PNP Silicon Epitaxial Planar Transistors for switching, AF driver and amplifier applications. • Especially suited for automatic insertion in thick and thin-film circuits. • These transistors are subdivided into three groups

Contextual Info: BC807, BC808 Small Signal Transistors PNP TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Mounting Pad Layout Top View .056 (1.43) .052 (1.33) 3 .016 (0.4) 0.079 (2.0) 0.035 (0.9) .007 (0.175) .005 (0.125) max. .004 (0.1) .037(0.95) .037(0.95) .016 (0.4)

Contextual Info: Product specification P hilips S em iconductors BC807W; BC808W PNP general purpose transistor PIN CONFIGURATION FEATURES • High current • S- mini package. DESCRIPTION PNP transistor in a plastic SOT323 package, for general switching and amplification.

Contextual Info: BC807, BC808 Small Signal Transistors PNP TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Mounting Pad Layout Top View 3 .056 (1.43) .052 (1.33) 0.031 (0.8) .016 (0.4) .007 (0.175) .005 (0.125) max. .004 (0.1) .037(0.95) .037(0.95) 0.035 (0.9) Pin Configuration

BC80816

Abstract: bc808
Contextual Info: MCC TM Micro Commercial Components BC808-16 BC808-25 BC808-40
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • PNP Silicon General Purpose Transistors Capable of 0.3Watts of Power Dissipation.

marking 5CT sot-23

Abstract: 5Ct marking code marking code 5cs marking 5Cs BC807-40/5C code marking 5Ct sot-23 MARKING 5ct 5CS marking code sot 23 5Ct marking code sot 23 BC818
Contextual Info: BC807 / BC808 BC807 / BC808 Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage PNP PNP Version 2007-04-13 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse

50MHZ

Abstract: BC808
Contextual Info: RECTRON BC808 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM : 200 mW (Tamb=25OC) * Collector current ICM : 500 mA * Collector-base voltage V(BR)CBO : 30 V * Operating and storage junction temperature range