5GHZ FT Search Results

Contextual Info: Ordering number : ENA1076A 2SC4853A RF Transistor http://onsemi.com 6V, 15mA, fT=5GHz, NPN Single MCP Features • Low-voltage, low-current operation : fT=5GHz typ VCE=1V, IC=1mA : ⏐S21e⏐2=7dB typ (f=1GHz) : NF=2.6dB typ (f=1GHz) Specifications Absolute Maximum Ratings at Ta=25°C

Contextual Info: Datasheet | Wireless LAN AT-WR4542 IEEE 802.11 5GHz Outdoor Wireless Routing CPE AT-WR4542 IEEE 802.11a/h outdoor wireless routing CPE with 22dBi 5GHz embedded panel antenna A Complete Solution for Wireless ISPs, Local Utilities, Municipalities, Hospitality and Enterprises

max2852

Abstract: MAX2852ITK wireless hdmi max285
Contextual Info: 19-5010; Rev 1; 3/10 TION KIT EVALUA BLE IL AVA A 5GHz Receiver The MAX2852 is a single-chip RF receiver IC designed for 5GHz wireless HDMI applications. The IC includes all circuitry required to implement the complete receiver function and crystal oscillator, providing a fully integrated

Contextual Info: 19-5009; Rev 1; 3/10 5GHz, 4-Channel MIMO Transmitter The MAX2850 is a single-chip, 4-channel RF transmitter IC designed for 5GHz wireless HDMI applications. The IC includes all circuitry required to implement the complete 4-channel MIMO RF transmitter function and crystal oscillator, providing a fully integrated transmit path,

Contextual Info: 19-5121; Rev 1; 3/10 TION KIT EVALUA BLE IL AVA A 5GHz, 5-Channel MIMO Receiver The MAX2851 is a single-chip, 5-channel RF receiver IC designed for 5GHz wireless HDMI applications. The IC includes all circuitry required to implement the complete 5-channel MIMO RF receiver function and crystal

Contextual Info: KSC2753 NPN EPITAXIAL SILICON TRANSISTOR LOW NOISE AMPLIFIER FOR VHF/UHF High fT = 5GHz NF = 1.5dB, |S218|: = 16dB <f = 500MHz NF = 1.7dB, |S21e|' = 10.5dB 1= 1000MHz) ABSOLUTE MAXIMUM RATINGS Characteristics Collector Base Voltage Collector Emitter Voltage

ic 1496 specifications

Abstract: 2SC4855 ITR07603 ITR07604 ITR07605 ITR07606 ITR07607 CE1M KT 1117
Contextual Info: Ordering number:ENN4759 NPN Epitaxial Planar Silicon Transistor 2SC4855 Low-Voltage, Low-Current High-Frequency Amplifier Applications Features Package Dimensions • Low-voltage, low-current operation : fT=5GHz typ. VCE=1V, IC=1mA : ⏐S21e⏐2=7.5dB typ

Contextual Info: Ordering number:ENN4759 NPN Epitaxial Planar Silicon Transistor 2SC4855 Low-Voltage, Low-Current High-Frequency Amplifier Applications Features Package Dimensions • Low-voltage, low-current operation : fT=5GHz typ. VCE=1V, IC=1mA : S21e2=7.5dB typ

EN4759

Abstract: UA 324 cn 2SC4855 ic 1496 specifications
Contextual Info: Ordering number:EN4759 NPN Epitaxial Planar Silicon Transistor 2SC4855 Low-Voltage, Low-Current& High-Frequency Amplifier Applications Features Package Dimensions • Low-voltage, low-current operation : fT=5GHz typ. VCE=1V, IC=1mA : S21e2=7.5dB typ

TA-2425

Abstract: 2SC5537 ENN6340 26GHz
Contextual Info: Ordering number:ENN6340 NPN Epitaxial Planar Silicon Transistor 2SC5537 Low-Voltage, Low-Current High-frequency Amplifier Applications Package Dimensions • Low voltage, low current operation : fT=5GHz typ. VCE=1V, IC=1mA : S21e2=7dB typ (f=1GHz).

2SC5537

Abstract: ic 723 cn
Contextual Info: Ordering number:ENN6340 NPN Epitaxial Planar Silicon Transistor 2SC5537 Low-Voltage, Low-Current High-frequency Amplifier Applications Package Dimensions • Low voltage, low current operation : fT=5GHz typ. VCE=1V, IC=1mA : ⏐S21e⏐2=7dB typ (f=1GHz).

KT 819 transistor

Abstract: TRANSISTOR KT 838
Contextual Info: Ordering number:ENN4579 NPN Epitaxial Planar Silicon Transistor 2SC4854 Low-Voltage, Low-Current High-Frequency Amplifier Applications Features Package Dimensions • Low-voltage, low-current operation : fT=5GHz typ. VCE=1V, IC=1mA : S21e2=7dB typ (f=1GHz).

CE1M

Abstract: TRANSISTOR KT 838 KT 819 transistor 2SC4854 ITR07592 ITR07593 ITR07594 ITR07595 AX-9521
Contextual Info: Ordering number:ENN4579 NPN Epitaxial Planar Silicon Transistor 2SC4854 Low-Voltage, Low-Current High-Frequency Amplifier Applications Features Package Dimensions • Low-voltage, low-current operation : fT=5GHz typ. VCE=1V, IC=1mA : ⏐S21e⏐2=7dB typ (f=1GHz).

Contextual Info: HFA3102 Semiconductor Dual Long-Tailed Pair Transistor Array August 1996 Description Features High Gain-Bandwidth Product fy . . . . 10GHz High Power Gain-Bandwidth Product . . 5GHz High Current Gain (h p ^ ). 70 Noise Figure (Transistor).

of transistor C 4908

Abstract: 2SC4853 TED 2422 c 337 25
Contextual Info: Ordering number:EN4578A NPN Epitaxial Planar Silicon Transistor 2SC4853 Low-Voltage, Low-Current High-Frequency Amplifier Applications Package Dimensions unit:mm 2059B [2SC4853] 0.425 • Low-voltage, low-current operation : fT=5GHz typ. VCE=1V, IC=1mA : S21e2=7dB typ (f=1GHz).

Contextual Info: Ordering number:ENN4578A NPN Epitaxial Planar Silicon Transistor 2SC4853 Low-Voltage, Low-Current High-Frequency Amplifier Applications Package Dimensions unit:mm 2059B [2SC4853] 0.425 • Low-voltage, low-current operation : fT=5GHz typ. VCE=1V, IC=1mA : S21e2=7dB typ (f=1GHz).

MARKING CN

Abstract: ic 4578 2SC4853 ITR07581 ITR07582 ITR07583 ITR07584 j200 transistor
Contextual Info: Ordering number:ENN4578A NPN Epitaxial Planar Silicon Transistor 2SC4853 Low-Voltage, Low-Current High-Frequency Amplifier Applications Package Dimensions unit:mm 2059B [2SC4853] 0.425 • Low-voltage, low-current operation : fT=5GHz typ. VCE=1V, IC=1mA : ⏐S21e⏐2=7dB typ (f=1GHz).

TA4100F

Abstract: ta4100
Contextual Info: TOSHIBA TA4100F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA41OOF UHF VHF RF, MIX APPLICATION FEATURES • High fT . fT = 5GHz • Differential Circuit is Composed of 3 Transistors. SSOP6-P-0.95 PIN ASSIGNMENT (TOP VIEW) B3 E W eight : 0.013g (Typ.)

TA4100F

Contextual Info: TOSHIBA TA4100F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA4100F UHF VHF RF, M IX APPLICATION FEATURES • High fT. fT = 5GHz • Differential Circuit is Composed of 3 Transistors. SSOP6-P-0.95 PIN ASSIGNMENT (TOP VIEW) B3 E W eight : 0.013g (Typ.)

TRANSISTOR KT 838

Abstract: KT 819 transistor 2SC4854
Contextual Info: Ordering number:EN4579 NPN Epitaxial Planar Silicon Transistor 2SC4854 Low-Voltage, Low-Current High-Frequency Amplifier Applications Package Dimensions • Low-voltage, low-current operation : fT=5GHz typ. VCE=1V, IC=1mA : S21e2=7dB typ (f=1GHz). : NF=2.6dB typ (f=1GHz).

A1076

Abstract: ITR07582 ITR07583 ITR07585
Contextual Info: 2SC4853A Ordering number : ENA1076 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC4853A Low-Voltage, Low-Current High-Frequency Amplifier Applications Features • Low-voltage, low-current operation : fT=5GHz typ. VCE=1V, IC=1mA :⏐S21e⏐2=7dB typ (f=1GHz).

Contextual Info: 2SC4853A Ordering number : ENA1076A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC4853A Low-Voltage, Low-Current High-Frequency Amplifier Applications Features • Low-voltage, low-current operation : fT=5GHz typ VCE=1V, IC=1mA : ⏐S21e⏐2=7dB typ (f=1GHz)

Contextual Info: TOSHIBA TA4100F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA4100F UHF VHF RF, M IX APPLICATION FEATURES • High fT. fT = 5GHz • Differential Circuit is Composed of 3 Transistors. SSOP6-P-0.95 PIN ASSIGNMENT (TOP VIEW) B3 E W eight : 0.013g (Typ.)

a1093

Abstract: NF 841 ENA1093 2SC5537
Contextual Info: 2SC5537A Ordering number : ENA1093 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5537A Low-Voltage, Low-Current High-Frequency Amplifier Applications Features • • • Low-voltage, low-current operation : fT=5GHz typ. VCE=1V, IC=1mA :⏐S21e⏐2=7dB typ (f=1GHz).