5N60 MOSFET Search Results

5N60B

Abstract: 5N60 5n60-b 5N60A utc 5n60l 5N60 datasheet 5N60L
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5N60 Power MOSFET 4.5 Amps, 600/650 Volts N-CHANNEL MOSFET 1 „ DESCRIPTION The UTC 5N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

5N60G

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5N60 Power MOSFET 5A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 5N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high

5n60

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5N60 Power MOSFET 5A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 5N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high

5N60

Abstract: 5N60L 5N60-TA3-T UTC5N60 5N60 datasheet 5N60-TF3-T utc 5n60l
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5N60 Power MOSFET 4.5 Amps, 600 Volts N-CHANNEL MOSFET 1 DESCRIPTION TO-220 The UTC 5N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5N60 Power MOSFET 4.5 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 5N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

G5N60

Abstract: 5n60 100SU utc 5n60l
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5N60 Power MOSFET 4.5A, 600V N-CHANNEL POWER MOSFET 1 DESCRIPTION „ The UTC 5N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

utc 5n60l

Abstract: 5N60L 5N60L-TF2-T 5N60L-TN3-R 5N60 5N60G
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5N60 Power MOSFET 5A, 600V N-CHANNEL POWER MOSFET 1 1 TO-220F TO-220 DESCRIPTION „ The UTC 5N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high

5n60b

Abstract: 5N60A 5n60-b
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5N60 MOSFET 4.5 Amps, 600/650 Volts N-CHANNEL MOSFET 1 DESCRIPTION TO-220 The UTC 5N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

5N60A

Abstract: 5N60B 5N60 5n60 mosfet UTC5n60 utc 5n60l 5N60 datasheet 100SU MOSFET having TO-252 PAckage 5N60L
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5N60 Power MOSFET 4.5 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 5N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

5N60G

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5N60 Power MOSFET 5A, 600V N-CHANNEL POWER MOSFET 1 „ TO-220F TO-220 DESCRIPTION The UTC 5N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high

5N60

Abstract: MTN5N60FP
Contextual Info: CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTN5N60FP Spec. No. : C408FP-A Issued Date : 2009.04.20 Revised Date : Page No. : 1/9 BVDSS : 650V @Tj=150℃ RDS ON : 2.5Ω ID : 4.5A Description The MTN5N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best

br 5n60

Abstract: 5N60 MOSFET IGSS 100nA VDS 20V MIL-HDBK-263
Contextual Info: E 5N60 VDSS=600V; ID=5.0A; RDS ON =2.2Ω MOSFET Die in Wafer Form 100% Tested at Probe Key Electrical Characteristics (TO­220 package) Parameter V(BR)DSS RDS(on) VGS(th) IDSS IGSS Tj TSTG Description Drain­to­Source Breakdown Voltage

8N65

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 產 品 變 更 通 知 PRODUCT CHANGE NOTIFICATION PCN No. TITLE IC-PPCN-110605 xN60 MOSFET Part Number Change Issue Date Jun-29-2011 Page 1 of 2 變更主旨 TITLE : xN60系列取消檔次及650V產品變更品名 Bin code cancellation for xN60 series and part number change for 650V of xN60 series MOSFET Devices

5N60

Contextual Info: CPEC 成都瑞芯电子有限公司 CHENGDU PROMISING CHIP ELECTRONICS CO., LTD RX5N60 600V N 沟道功率 MOSFET 产品简介 地址；成都高新区世纪城南路 216 号天府软件园 D 区 6 号楼 14 层 Tel：086-28-85198496 85198428 Fax：086-28-8519893

220V 350mA LED driver

Abstract: 350mA 1watt led driver circuit 220v 350ma led circuit 12V to 300V dc dc converter step-up 220V LED lighting circuit diagram 220v input 350ma output led ZENER DIODE 5.1V, 350mA 1watt led 220vac driver PA5910 220vac LED driver
Contextual Info: 95220 PA5910 Switching Type LED Driver. ANALOG PRODUCTS DIVISION Description Features • Constant current LED driver: • 20mA to 2A programmable • Step-up or step-down operation • >90 efficiency • 2.5V to 450V • Up to 2MHz switching frequency The PA5910 is a high efficiency LED driver control

FCD5N60

Contextual Info: SuperFET TM FCD5N60 / FCU5N60 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and

circuit diagram of 5kw smps full bridge

Abstract: TJM 10 earth fault relay SCK 054 VARISTOR TMS320F2406 SCHEMATIC 10kw POWER SUPPLY WITH IGBTS SCHEMATIC 5kw power supply 30A thermistor SCK 054 5kw inverter schematic TJM 11 earth fault relay 5kw smps full bridge S.M.P.S
Contextual Info: Application Note 9018 May, 2002 Smart Power Module User’s Guide CONTENTS 1. Introduction .3 2. SPM-Inverter System Overview .4