5P TRANSISTOR MARKING Search Results

Contextual Info: NZT751 PNP Current Driver Transistor Description 4 This device is designed for power amplifier, regulator, and switching circuits where speed is important. Sourced from Process 5P. 3 2 1 SOT-223 1. Base 2,4. Collector 3. Emitter Ordering Information Part Number

Contextual Info: MOTOROLA Order this document by MMFT5P03HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M M F T 5P 0 3H D Medium Power Surface Mount Products Motorola Preferred Device TMOS P-Channel Field Effect Transistor TMOS MEDIUM POWER FET 5.2 AMPERES

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

mip411

Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

PC 1

Abstract: 5P TRANSISTOR MARKING sot-89 na
Contextual Info: ྯ૵਌ Epitaxial Planar NPN Transistor Epitaxial Planar NPN Transistor DESCRIPTION & FEATURES High current application Complement to FHB1273 FHD3205 ྯ૵਌ 概述及特點 SOT-89 PIN ASSIGNMENT 引腳說明 PIN NAME FUNCTION PIN NUMBER 引腳序號 管腳符號

voltage regulator sot-89 3v

Abstract: dcdc sot-89 FHD3205 FHD3205E FHD3205P FHD3205Q FHD3205R transistor marking 2a REGULATOR SOT89 30v high power amplifier sot89
Contextual Info: SOT-89 EPITAXIAL SILICON Transistor FHD3205 FEATURES特征 •High current output up to 2A; ·Low saturation voltage; ·Complement to FHB1273; ·NPN EPITAXIAL SILICON TRANSISTOR. Applications应用 ·Audio power amplifier; ·DC-DC converter; ·Voltage regulator.

sot 23 marking code 2t

Abstract: marking DG sot-23 NPN transistor sot-23 MARKING CODE G1 MARKING NT SOT23 sot-23 l6 marking of m7 diodes sot-23 marking LC transistor ad 1v m6 marking transistor sot-23 C5 MARKING TRANSISTOR
Contextual Info: FERRANTI semiconductors HT2 NPN Silicon Planar High Voltage Transistor DESCRIPTION This plastic encapsulated transistor is designed for any application requiring high voltage capability at relatively low collector currents. Complementary to the HT3 Encapsulated in the popular SOT-23 package the device is

IC TA 31101

Abstract: pa 2030a equivalent pa 2030a FC102 ts 3110 TRANSISTOR 2SC4211 C-03 DDD744S 08/bup 3110 transistor
Contextual Info: SANYO SEMICONDUCTOR CORP 55E D 7 EH707fci Q D 0 7 M 4 D Q T - Z 7 -Ö 7 FC102 # NPN Epitaxial Planar Silicon Com posite Transistor 2067 Low-Frequency General-Purpose Amp, Differential Amp Applications 3110 F eatu res •Composite type with 2 transistors contained in the CP package currently in use, im proving the

693F TRANSISTOR

Abstract: 693F transistor 693f 2SC2814 P3NF
Contextual Info: O rdering number : EN 693F _ 2SC2814 N0.693F NPN Epitaxial P lanar Silicon Transistor SANYO High-Frequency General-Purpose Amp Applications I Features . Very small package enabling compactness and slimness of sets. . High fx and small Cre* fT=320MHz typ, cre=0.95pF typ

FMMT918

Abstract: marking of m7 diodes transistor EH sot-23 A12 marking sot-23 MARKING CODE G1 3B sot23 marking m6 marking transistor sot-23 ferranti marking code CB sot23 transistor marking code 7E SOT-23
Contextual Info: FERRANTI * semiconductors FMMT918 NPN Silicon Planar V H F /U H F Transistor DESCRIPTION This device is intended for low noise, high frequency amplifier and oscillator applications. Encapsulated in the popular SOT-23 package the device is designed specifically for use in thin and thick film hybrid

marking of m7 diodes

Abstract: BSS63 A12 marking BSS64R C5 MARKING TRANSISTOR device marking code S4 diode marking 2T Diode marking m7 transistor marking code SOT-23 2F Marking H2
Contextual Info: FERRANTI 4 semiconductors BSS64 ! NPN S ilico n Planar H igh V o lta g e T ra n s is to DESCRIPTION This plastic encapsulated transistor is designed for any application requiring high voltage capability at relatively low collector currents. Complementary to the BSS63.

sot-23 MARKING CODE G1

Abstract: C5 MARKING TRANSISTOR sot 23 marking code 2t BFS20 sot-23 Marking G1 MARKING CODE DH SOT 23 marking code C5 sot23 marking H6 sot 23 marking code CB sot23 marking of m7 diodes
Contextual Info: FERRANTI semiconductors BFS20 NPN Silicon Planar VHF Transistor DESCRIPTION These devices are intended fo r IF and V H F applications w here lo w feedback capacitance is required. Encapsulated in the popular SOT-23 package these devices are designed specifically fo r use in thin and thick film

transistor marking code 7E SOT-23

Abstract: transistor dg sot-23 marking 1p transistor sot23 D6 TRANSISTOR MARKING m6 marking transistor sot-23 sot-23 MARKING CODE G1 TRANSISTOR 1P SOT23 transistor sot-23 Marking AR transistor G1 SOT-23 transistor cg sot-23
Contextual Info: FERRANTI semiconductors BSS63 PNP S ilico n Planar High V o lta g e T ra n s is to r D ES C R IPTIO N & This plastic encapsulated transistor is designed fo r any application requiring high vo lta g e capability a t relatively low collector currents. C o m p lem en tary to th e BSS64.

KEP32

Abstract: HEP32 HP32 MC100EP32 MC10EP32
Contextual Info: MC10EP32, MC100EP32 3.3V / 5V ECL B2 Divider Description • 350 ps Typical Propagation Delay • Maximum Frequency > 4 GHz Typical Figure 3 • PECL Mode Operating Range: • MARKING DIAGRAMS* 8 8 1 SOIC−8 D SUFFIX CASE 751 1 8 8 1 VCC = 3.0 V to 5.5 V with VEE = 0 V

KEP32

Abstract: HEP32 HP32 MC100EP32 MC10EP32
Contextual Info: MC10EP32, MC100EP32 3.3V / 5V ECL B2 Divider Description Features • 350 ps Typical Propagation Delay • Maximum Frequency > 4 GHz Typical Figure 3 • PECL Mode Operating Range: • http://onsemi.com MARKING DIAGRAMS* 8 8 1 SOIC−8 D SUFFIX CASE 751

KEP32

Abstract: MC100EP32DTG HEP32 HP32 MC100EP32 MC10EP32
Contextual Info: MC10EP32, MC100EP32 3.3V / 5V ECL B2 Divider Description • 350 ps Typical Propagation Delay • Maximum Frequency > 4 GHz Typical Figure 3 • PECL Mode Operating Range: • MARKING DIAGRAMS* 8 8 1 SOIC−8 D SUFFIX CASE 751 1 8 8 1 VCC = 3.0 V to 5.5 V with VEE = 0 V

693F TRANSISTOR

Abstract: 693F N20J transistor 693f 2SC2814 2SC28H II04A
Contextual Info: SAN YO S E M I C O N D U C T O R CORP TTTTOTb 5SE D OQDbTl? T • ' 3 'I S 2SC2814 ♦ NPN Epitaxial Planar Silicon Transistor 2018A High-Frequency General-Purpose Amp Applications 693F Features . V ery small pack a g e ena b l i n g compactness and slimness of sets.

2SA1177

Abstract: hf power amplifiers 2-30 mhz
Contextual Info: Ordering number: EN 7 tì ci7G7ti 0 0 1 5 5 1 5 851G 44D 2SA1177 SAiYO PNP Epitaxial Planar Silicon Transistor i HF Amp Applications Use f o r u s e i n FM RF a m p l i f i e r s , m i x e r s , o s c i l l a t o r s , . Id e a lly s u ite d IF a m p l i f i e r s .

k 2059 TRANSISTOR

Abstract: TRANSISTOR BI 187 2T transistor surface mount pa 2030a 2SC4400 NPN S2e 1Ft TRANSISTOR
Contextual Info: SANY O S E M I C O N D U C T O R 2SE CORP D 7 cH ? 0 7 b 000 3^33 7 2SC4400 T -3 I-IS 'r;' ,>V ^ ’sx'*>V:- N P N Epitaxial Planar Silicon Transistor 2059 High-Frequency General-Purpose Amp Applications F eatu res . High power gain • High cutoff frequency

Contextual Info: Data Sheet CURRENT MODE PWM CONTROLLER AZ2842/3/4/5 General Description Features The AZ2842842/3/4/5 are high performance fixed frequency current-mode PWM controller series. • These integrated circuits are optimized for off-line and DC-DC converter applications with minimum external

Contextual Info: Data Sheet CURRENT MODE PWM CONTROLLER AZ2842/3/4/5 General Description Features The AZ2842/3/4/5 are high performance fixed frequency current-mode PWM controller series. • These integrated circuits are optimized for off-line and DC-DC converter applications with minimum external

5ME1

Contextual Info: Data Sheet CURRENT MODE PWM CONTROLLER AZ2842/3/4/5 General Description Features The AZ2842/3/4/5 are high performance fixed frequency current-mode PWM controller series. • These integrated circuits are optimized for off-line and DC-DC converter applications with minimum external