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    5SBB 20T1500

    Abstract: 5SBB 20T1200 5SBD 05T1300 20T1800 5SBD 05T1400 5SBA 20T0800 20T0500 5SBB 20T2200 20T1500
    Text: B R E A K O V E R _ D I O D E S Diffused pnpn structure fired by over­ voltages. Effective protection of thyristors against transients. Thyristor protection by emergency firing. - Diffundierte pnpn-Struktur, wird durch Überspannungen gezündet.


    OCR Scan     		PDF 20T1500 20T1600 20T1700 20T1800 20T1900 20T2000 20T2100 20T2200 20T2300 20T2400 5SBB 20T1500 5SBB 20T1200 5SBD 05T1300 5SBD 05T1400 5SBA 20T0800 20T0500 5SBB 20T2200

    Abb breakover diode

    Abstract: BU 3150 cross reference 5SBD 05T1400 20T100 5SBB 20T1200 5SBB 20T1500 20T2500 5SBA 5SBD 05T1300 05t1800
    Text: Breakover Diodes ABB Semiconductors AG • D iffused pnpn structure fired by over­ voltages. Effective protection of thyristors against transients. T hyristor protection by em ergency firing. Housing: Single elem ent Int. structure m > T ole ­ rance V >


    OCR Scan     		PDF VBO/100 VR/100 Abb breakover diode BU 3150 cross reference 5SBD 05T1400 20T100 5SBB 20T1200 5SBB 20T1500 20T2500 5SBA 5SBD 05T1300 05t1800