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    5SBB 20T1500

    Abstract: 5SBB 20T1200 5SBD 05T1300 20T1800 5SBD 05T1400 5SBA 20T0800 20T0500 5SBB 20T2200 20T1500
    Text: B R E A K O V E R _ D I O D E S Diffused pnpn structure fired by over­ voltages. Effective protection of thyristors against transients. Thyristor protection by emergency firing. - Diffundierte pnpn-Struktur, wird durch Überspannungen gezündet.


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    PDF 20T1500 20T1600 20T1700 20T1800 20T1900 20T2000 20T2100 20T2200 20T2300 20T2400 5SBB 20T1500 5SBB 20T1200 5SBD 05T1300 5SBD 05T1400 5SBA 20T0800 20T0500 5SBB 20T2200

    Abb breakover diode

    Abstract: BU 3150 cross reference 5SBD 05T1400 20T100 5SBB 20T1200 5SBB 20T1500 20T2500 5SBA 5SBD 05T1300 05t1800
    Text: Breakover Diodes ABB Semiconductors AG • D iffused pnpn structure fired by over­ voltages. Effective protection of thyristors against transients. T hyristor protection by em ergency firing. Housing: Single elem ent Int. structure m > T ole ­ rance V >


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    PDF VBO/100 VR/100 Abb breakover diode BU 3150 cross reference 5SBD 05T1400 20T100 5SBB 20T1200 5SBB 20T1500 20T2500 5SBA 5SBD 05T1300 05t1800