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    5V GATE TO SOURCE VOLTAGE MOSFET Search Results

    5V GATE TO SOURCE VOLTAGE MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    5V GATE TO SOURCE VOLTAGE MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    bv42 transistor

    Abstract: bv42 27e5 LM324 FDSS2407 injector driver 33E10 marking n9 8-pin PIN diode Pspice model
    Text: FDSS2407 N-Channel Dual MOSFET 62V, 3.3A, 132mΩ Features General Description „ 62V, 132mΩ, 5V Logic Level Gate Dual MOSFET in SO-8 This dual N-Channel MOSFET provides added functions as compared to a conventional Power MOSFET. These are: 1. A drain to source voltage feedback signal and 2. A gate


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    PDF FDSS2407 FDSS2407 bv42 transistor bv42 27e5 LM324 injector driver 33E10 marking n9 8-pin PIN diode Pspice model

    TC227

    Abstract: No abstract text available
    Text: FDSS2407 N-Channel Dual MOSFET 62V, 3.3A, 132mΩ Features General Description ̈ 62V, 132mΩ, 5V Logic Level Gate Dual MOSFET in SO-8 This dual N-Channel MOSFET provides added functions as compared to a conventional Power MOSFET. These are: 1. A drain to source voltage feedback signal and 2. A gate


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    PDF FDSS2407 FDSS2407 TC227

    irlf120

    Abstract: 480 mosfet to-39
    Text: PD-90639B IRLF120 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-39 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) IRLF120 100V 0.35Ω ID 5.3A The Logic Level ‘L’ series of power MOSFETs are designed to be operated with level logic gate-to-source voltage of 5V.


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    PDF PD-90639B IRLF120 IRLF120 --TO-205AF 480 mosfet to-39

    Untitled

    Abstract: No abstract text available
    Text: PD-90639B IRLF120 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-39 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) IRLF120 100V 0.35Ω ID 5.3A The Logic Level ‘L’ series of power MOSFETs are designed to be operated with level logic gate-to-source voltage of 5V.


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    PDF PD-90639B IRLF120 O-205AF

    Untitled

    Abstract: No abstract text available
    Text: PD-90639C IRLF120 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-39 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) IRLF120 100V 0.35Ω ID 5.3A The Logic Level ‘L’ series of power MOSFETs are designed to be operated with level logic gate-to-source voltage of 5V.


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    PDF PD-90639C IRLF120 O-205AF

    si7738

    Abstract: flyback secondary RC snubber CMZ5919B
    Text: LT3748 100V Isolated Flyback Controller Features Description 5V to 100V Input Voltage Range nn 1.9A Average Gate Drive Source and Sink Current nn Boundary Mode Operation nn No Transformer Third Winding or Opto-Isolator Required for Regulation nn Primary-Side Winding Feedback Load Regulation


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    PDF LT3748 LT1737 3803/LTC3803-3 LTC3803-5 200kHz/300kHz LTC3805/LTC3805-5 com/LT3748 3748fb si7738 flyback secondary RC snubber CMZ5919B

    Untitled

    Abstract: No abstract text available
    Text: TSM2N7000K 60V N-Channel MOSFET TO-92 PRODUCT SUMMARY VDS V RDS(on)() Pin Definition: 1. Source 2. Gate 3. Drain 60 Features ID (mA) 5 @ VGS = 10V 100 5.5 @ VGS = 5V 100 Block Diagram  Low On-Resistance  ESD Protection  High Speed Switching  Low Voltage Drive


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    PDF TSM2N7000K TSM2N7000KCT

    Pa3177NL

    Abstract: LT3748 IGBT 48V 200A Si7738 BZT52C5 RC snubber mosfet design 750311591 flyback snubber c3748 B360 diode
    Text: LT3748 100V Isolated Flyback Controller Features n n n n n n n n n n Description 5V to 100V Input Voltage Range 1.9A Average Gate Drive Source and Sink Current Boundary Mode Operation No Transformer Third Winding or Opto-Isolator Required for Regulation Primary-Side Winding Feedback Load Regulation


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    PDF LT3748 0V/100V LT1725 LT1737 3803/LTC3803-3 200kHz/300kHz LTC3803-5 LTC3805/LTC3805-5 3748f Pa3177NL LT3748 IGBT 48V 200A Si7738 BZT52C5 RC snubber mosfet design 750311591 flyback snubber c3748 B360 diode

    5V GATE TO SOURCE VOLTAGE MOSFET

    Abstract: differential pair cascode Monolithic Transistor Pair ALD1101 ALD1102 ALD1103 Dual N-Channel MOSFET dip package CMOS differential amplifier cascode
    Text: ADVANCED LINEAR DEVICES, INC. ALD1103 DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIR GENERAL DESCRIPTION APPLICATIONS The ALD1103 is a monolithic dual N-channel and dual P-channel matched transistor pair intended for a broad range of analog applications. These


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    PDF ALD1103 ALD1103 ALD1101 ALD1102 ALD1103) 5V GATE TO SOURCE VOLTAGE MOSFET differential pair cascode Monolithic Transistor Pair Dual N-Channel MOSFET dip package CMOS differential amplifier cascode

    p-channel mosfet transistor low power

    Abstract: differential pair cascode mosfet vgs 1.2v vds 5V mosfet vgs 5v n channel enhanced mosfet mosfet Vgs 10mV Ald1103 Monolithic Transistor Pair p channel mosfet ALD1101
    Text: ADVANCED LINEAR DEVICES, INC. ALD1103 DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIR GENERAL DESCRIPTION APPLICATIONS The ALD1103 is a monolithic dual N-channel and dual P-channel matched transistor pair intended for a broad range of analog applications. These


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    PDF ALD1103 ALD1103 ALD1101 ALD1102 ALD1103) p-channel mosfet transistor low power differential pair cascode mosfet vgs 1.2v vds 5V mosfet vgs 5v n channel enhanced mosfet mosfet Vgs 10mV Monolithic Transistor Pair p channel mosfet

    5V GATE TO SOURCE VOLTAGE MOSFET

    Abstract: cascode mosfet current mirror Monolithic Transistor Pair mosfet pair ALD1103 ALD1105 ALD1116 ALD1117 differential pair cascode CMOS differential amplifier cascode
    Text: ADVANCED LINEAR DEVICES, INC. ALD1105 DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED PAIR MOSFET GENERAL DESCRIPTION APPLICATIONS The ALD1105 is a monolithic dual N-channel and dual P-channel complementary matched transistor pair intended for a broad range of analog applications. These enhancement-mode transistors are


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    PDF ALD1105 ALD1105 ALD1116 ALD1117 ALD1103. 5V GATE TO SOURCE VOLTAGE MOSFET cascode mosfet current mirror Monolithic Transistor Pair mosfet pair ALD1103 differential pair cascode CMOS differential amplifier cascode

    50130A

    Abstract: RFP50N05L9A AN7254 RFG50N05L RFP50N05L TB334
    Text: RFG50N05L, RFP50N05L Data Sheet 50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs These are logic-level N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon,


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    PDF RFG50N05L, RFP50N05L 50130A RFP50N05L9A AN7254 RFG50N05L RFP50N05L TB334

    AN7254

    Abstract: AN7260 RFW2N06RLE TB334
    Text: RFW2N06RLE Data Sheet July 1999 2A, 60V, 0.160 Ohm, Logic Level, N-Channel Power MOSFET File Number 2838.3 Features • 2A, 60V The RFW2N06RLE N-Channel, logic level, ESD protected, power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes


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    PDF RFW2N06RLE RFW2N06RLE AN7254 AN7260 TB334

    12N6LE

    Abstract: 12n06rle AN9322 RFD12N06RLE RFD12N06RLESM RFP12N06RLE TB334 n06r 12N06
    Text: [ /Title RFD1 2N06R LE, RFD12 N06RL ESM, RFP12 N06RL E /Subject (12A, 60V, 0.135 Ohm, NChannel, Logic Level, Power MOSFETs) /Autho r () /Keywords (Intersil Corporation, NChannel, Logic Level, Power MOS- RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE Data Sheet


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    PDF 2N06R RFD12 N06RL RFP12 RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE 12N6LE 12n06rle AN9322 RFD12N06RLE RFD12N06RLESM RFP12N06RLE TB334 n06r 12N06

    voltage source inverter

    Abstract: parallel mosfet p channel ALD1105 ALD1115 n channel silicon mosfet ALD1115PAL ALD1116 5V GATE TO SOURCE VOLTAGE MOSFET inverter 4v to 12v N P CHANNEL dual POWER MOSFET
    Text: ADVANCED LINEAR DEVICES, INC. ALD1115 COMPLEMENTARY N-CHANNEL AND P-CHANNEL MOSFET GENERAL DESCRIPTION APPLICATIONS The ALD1115 is a monolithic complementary N-channel and P-channel transistor pair intended for a broad range of analog applications. These enhancement-mode transistors are manufactured with Advanced Linear


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    PDF ALD1115 ALD1115 ALD1105. ALD1105 ALD1116) voltage source inverter parallel mosfet p channel n channel silicon mosfet ALD1115PAL ALD1116 5V GATE TO SOURCE VOLTAGE MOSFET inverter 4v to 12v N P CHANNEL dual POWER MOSFET

    Untitled

    Abstract: No abstract text available
    Text: e ADVANCED LINEAR DEVICES, INC. TM EPAD EN AB LE D ALD210800/ALD210800A PRECISION N-CHANNEL EPAD® MOSFET ARRAY VGS th = +0.00V QUAD HIGH DRIVE ZERO THRESHOLD MATCHED PAIR GENERAL DESCRIPTION FEATURES & BENEFITS ALD210800A/ALD210800 precision N-Channel EPAD® MOSFET array is precision matched at the factory using ALD’s proven EPAD® CMOS technology. These


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    PDF ALD210800/ALD210800A ALD210800A/ALD210800 ALD110800A/ALD110800

    AN7254

    Abstract: AN7260 RFP8N20L TB334
    Text: RFP8N20L Data Sheet July 1999 8A, 200V, 0.600 Ohm, Logic Level, N-Channel Power MOSFET File Number Features • 8A, 200V This N-Channel enhancement mode silicon gate power field effect transistor is specifically designed for use with logic level 5V driving sources in applications such as


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    PDF RFP8N20L AN7254 AN7260 RFP8N20L TB334

    ALD1105PBL

    Abstract: ALD1105 inverter 4v to 12v n channel mosfet 500 mA 400 v
    Text: ADVANCED LINEAR DEVICES, INC. ALD1105 DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIR GENERAL DESCRIPTION APPLICATIONS The ALD1105 is a monolithic dual N-channel and dual P-channel complementary matched transistor pair intended for a broad range of analog applications. These enhancement-mode transistors are


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    PDF ALD1105 ALD1105 ALD1116 ALD1117 ALD1103. CERDIP-14 ALD1105PBL inverter 4v to 12v n channel mosfet 500 mA 400 v

    AN7254

    Abstract: AN7260 RFP15N08L TB334
    Text: RFP15N08L Data Sheet June 1999 15A, 80V, 0.140 Ohm, Logic Level, N-Channel Power MOSFET File Number 2840.1 Features • 15A, 80V The RFP15N08L is an N-Channel enhancement mode silicon gate power field effect transistor specifically designed for use with logic level 5 volt driving sources in applications


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    PDF RFP15N08L RFP15N08L AN7254 AN7260 TB334

    AN7254

    Abstract: AN7260 RFP8N20L TB334
    Text: RFP8N20L Data Sheet January 2002 8A, 200V, 0.600 Ohm, Logic Level, N-Channel Power MOSFET Features • 8A, 200V This N-Channel enhancement mode silicon gate power field effect transistor is specifically designed for use with logic level 5V driving sources in applications such as


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    PDF RFP8N20L AN7254 AN7260 RFP8N20L TB334

    RASCO

    Abstract: No abstract text available
    Text: I I I / I \ A dvanced 1 L inear ALD1103 D e v ic e s , In c . DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIR GENERAL DESCRIPTION APPLICATIONS The ALD1103 is a monolithic dual N-channel and dual P-channel matched transistor pair intended for a broad range of analog applications. These


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    PDF ALD1103 ALD1103 ALD1101 ALD1102 ALD1103offers ALD1103) RASCO

    AN9321

    Abstract: AN9322 an7254 AN7260
    Text: RF3V49092, RF3S49092SM in t e ik il D a ta S h e e t 20A/10A, 12V, 0.060/0.140 Ohm, Logic Level, Complementary Power MOSFET These complementary power MOSFETs are manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated


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    PDF RF3V49092, RF3S49092SM 0A/10A, AN7254 AN7260. RF3S49092SM AN9321 AN9322 AN7260

    Analog Devices JX A 8 pin

    Abstract: ALD1103 N and P MOSFET
    Text: I / I 1 A dvanced L inear D e v ic e s , In c . ALD1103 DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIR APPLICATIONS GENERAL DESCRIPTION The ALD1103 is a monolithic dual N-channel and dual P-channel matched transistor pair intended for a broad range of analog applications. These


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    PDF ALD1103 ALD1103 ALD1101 ALD1102 AUD1103) Analog Devices JX A 8 pin N and P MOSFET

    Untitled

    Abstract: No abstract text available
    Text: æ I \ I / I " A dvanced 1 ^ L in e a r ALD1t 03 D e v ic e s , In c. DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIR GENERAL DESCRIPTION APPLICATIONS The ALD1103 is a monolithic dual N-channel and dual P-channel matched transistor pair intended for a broad range of analog applications. These


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    PDF ALD1103 ALD1101 ALD1102 DGG32c ALD1103) 025b063 00Q33Q