60 DP Search Results

Contextual Info: $OSKDQXPHULFDO SURGXFW OLVW DUW QR SDJH DUW QR SDJH DUW QR SDJH DUW QR ,&. 60' $  ,&. 60' %  ,&. 60' %2;  ,&. 60' &  ,&. 60'  ,&. 60'  ,&. 60' *  ,&. 60' +  ,&. 60' .  ,&. 60' 0  ,.  ,.   ,6  ,6  ,6  ,6  ,6 

400HB

Contextual Info: DPF 60 IM 400HB not released V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 400 V 60 A 60 ns 1 Part number Marking on product 2 DPF 60 IM 400HB 3 Features / Advantages: Applications: Package:

BL57

Abstract: 57BL 57BLS54 57BLS116 DPM 42 57BLS94 60VDC BL57-12C-54 speed motor encoder DPM 57BLS54
Contextual Info: BL57 24DC TO 60VDC Brushless Drive Dimensions in mm. Specifications Characteristics MODEL BL57-12C-54 BL57-12C-74 BL57-12C-94 BL57-12C-116 DPM MOTOR 57BLS54 57BLS74 57BLS94 57BLS116 24-60 24-60 24-60 24-60 1 SUPPLY 2 RATED VDC VOLTAGE RPM SPEED 3 RATED 4 DIGITAL

DPF60IM400HB

Contextual Info: DPF 60 IM 400 HB tentative V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number 1 2 400 V 60 A 60 ns 3 DPF 60 IM 400 HB Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips

DPF60IM400HB

Abstract: DPG60I400HA DPG60IM400QB
Contextual Info: DPF 60 IM 400 HB final V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 400 V 60 A 60 ns Part number DPF 60 IM 400 HB 1 2 3 Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips

DPG60IM400QB

Abstract: DPG60I400HA diode 0102 DPF60IM400HB marking HB diode diode marking 355 DPG60I DPG60I4
Contextual Info: DPF 60 IM 400 HB advanced V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 400 V 60 A 60 ns Part number DPF 60 IM 400 HB 1 2 3 Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips

DC-18GHz

Contextual Info: DPDT 700 Latching | SMA RF Characteristics s DC-18 GHz s Ruggedized s 100K Cycles Specifications Frequency GHz VSWR max Isolation dB (min) Ins. Loss dB (max) DC-1 1.15 80 0.15 1-4 1.25 60 0.25 4-8 1.35 60 0.35 8-12.4 1.50 60 0.50 12.4-18 1.50 60 0.50

710C70200

Contextual Info: 710 Failsafe | SMA DPDT RF Characteristics s DC-18 GHz s Ruggedized s 100K Cycles Specifications Frequency GHz VSWR max Isolation dB (min) Ins. Loss dB (max) DC-1 1.15 80 0.15 1-4 1.25 60 0.25 4-8 1.35 60 0.35 8-12.4 1.50 60 0.50 12.4-18 1.50 60 0.50

CH-3185

Abstract: 250R 500R 600R
Contextual Info: Drahtpotentiometer Typ DP 60 Standardausführung Wire-wound potentiometer type DP 60 standard execution Potentiomètre bobiné type DP 60 exécution standard Eigenschaften Characteristics / Caractéristiques Widerstandsbereich 2R0 bis 20K Resistance range / Gamme de résistance

nec 2Sb617

Abstract: 2SA1102 SANKEN 2SD371-0 sanken 2sa1102 LT019 181T2B Gentron 2SA808A LT019S 2SB617
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A fT t0N r hFE 'CBO Max Max Max on ON) Min (Hz) (A) (8) Max (Ohms) 60 60 60 60 65 65 65 65 65 65 65 65 75 100 100 100 100 100 100 40 40 40 40 40 40 40 50 50 50 60 60 22 40 50 85 85

Contextual Info: DPF 60 IM 400 HB final V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 400 V 60 A 60 ns Part number 1 2 3 Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips

Contextual Info: Thyristor Selection Guide SELECT GUIDE 15 Metal/Plastic lT AMPS 0.2 @ TC (°C) 25 60 60 60 60 25 25 lTSM (AMPS) 7.5 10 10 10 10 10 10 0.8 * % CASE TO-92 SOT-23 SOT-89 TO-92 SOT-223 VDRM,VRRM (VOLTS) 30 2N5060 BRX44I 60 2N5061 BRX45t 2N5062 BRX46t 100 CMPS5061

Contextual Info: 310 Failsafe | N, TNC, SC DPDT RF Characteristics s DC-6.5 GHz s DC-12.4 GHz s Ruggedized s 100K Cycles Frequency GHz VSWR max Isolation dB (min) Ins. Loss dB (max) DC-1 1.20 60 0.15 1-4 1.35 60 0.25 4-8 1.45 60 0.35 8-12.4 1.50 60 0.50 Note: RF Characteristics are for type N & TNC Female connectors, consult Dow-Key for other

Contextual Info: DPDT 300 Latching | N, TNC, SC RF Characteristics s DC-6.5 GHz s DC-12.4 GHz s Ruggedized s 100K Cycles Frequency GHz VSWR max Isolation dB (min) Ins. Loss dB (max) DC-1 1.20 60 0.15 1-4 1.35 60 0.25 4-8 1.45 60 0.35 8-12 1.50 60 0.50 Note: Performance applies to N and TNC type connectors. Consult with factory for other

Contextual Info: New Product SiR662DP Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A)a 0.0027 at VGS = 10 V 60 60 0.0048 at VGS = 4.5 V 60 0.0033 at VGS = 6 V 60 Qg (Typ.) 27.5 nC PowerPAK SO-8 S 6.15 mm • • • •

Contextual Info: New Product SiR662DP Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A)a 0.0027 at VGS = 10 V 60 60 0.0048 at VGS = 4.5 V 60 0.0033 at VGS = 6 V 60 Qg (Typ.) 27.5 nC PowerPAK SO-8 S 6.15 mm • • • •

Contextual Info: New Product SiR662DP Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () 0.0027 at VGS = 10 V 60 0.0033 at VGS = 6 V 60 0.0048 at VGS = 4.5 V 60 60 Qg (Typ.) 27.5 nC PowerPAK SO-8 S 6.15 mm • • • •

Contextual Info: SiR688DP Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () Max. 0.0035 at VGS = 10 V 60 0.0045 at VGS = 6 V 60 0.0060 at VGS = 4.5 V 60 60 Qg (Typ.) 20.5 nC PowerPAK SO-8 S 6.15 mm S 3 D • Synchronous Rectifier

DPG60IM400QB

Abstract: DPF60IM400HB DPG60I400HA dpg 60 im 400 qb DPF60I
Contextual Info: DPG 60 IM 400 QB V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 400 V 60 A 45 ns Part number DPG 60 IM 400 QB 1 2 3 Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips

D2PAK package

Abstract: DPG60IM300PC
Contextual Info: DPG 60 IM 300 PC V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 60 A 35 ns Part number DPG 60 IM 300 PC 1 2 3 Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips

STP10P6F6

Abstract: STD10P6F6 10P6F6 1040 TO-252
Contextual Info: STD10P6F6, STP10P6F6 P-channel 60 V, 0.15 Ω typ., 10 A STripFET VI DeepGATE™ Power MOSFET in DPAK and TO-220 packages Datasheet — preliminary data Features Order codes VDSS RDS on max ID STD10P6F6 60 V 0.18 Ω 10 A STP10P6F6 60 V 0.18 Ω 10 A •

400QB

Contextual Info: DPG 60 IM 400QB advanced V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 400 V 60 A 45 ns 1 Part number Marking on product 2 DPG 60 IM 400QB 3 Features / Advantages: Applications: Package: ● Planar passivated chips

DPG60IM400QB

Abstract: DPG60I400HA
Contextual Info: DPG 60 I 400 HA V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 400 V 60 A 45 ns Part number DPG 60 I 400 HA 3 1 Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips

dpg60i300

Abstract: DPG60IM300PC
Contextual Info: DPG 60 I 300 HA V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 60 A 35 ns Part number DPG 60 I 300 HA 3 1 Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips