600 VOLT MOSFET Search Results

Contextual Info: OM5227SC OM5229SC OM5231SC OM5228SC OM5230SC OM5232SC HIGH EFFICIENCY RECTIFIER AND POWER SCHOTTKY IN ONE HERMETIC PACKAGE 15 Amp, 50 To 600 Volt, 35 n sec Rectifier And 15 Amp, 45 Volt Schottky Combined In JEDEC TO-258AA Package FEATURES • Small Size, High Current

MOSFET 50 amp 1000 volt

Abstract: 300 Volt mosfet schematic circuit 300 Amp mosfet 1000 volt mosfet 200 Amp mosfet 60 amp 600 Volt Diode amp mosfet schematic circuit OM5232 rectifier diode 6 amp 400 volt OM5231SC
Contextual Info: OM5227SC OM5229SC OM5231SC OM5228SC OM5230SC OM5232SC HIGH EFFICIENCY RECTIFIER AND POWER SCHOTTKY IN ONE HERMETIC PACKAGE 15 Amp, 50 To 600 Volt, 35 n sec Rectifier And 15 Amp, 45 Volt Schottky Combined In JEDEC TO-258AA Package FEATURES • • • • •

MOSFET 50 amp 1000 volt

Abstract: 1000 volt mosfet amp mosfet schematic circuit 300 Amp mosfet OM5227SC OM5228SC OM5229SC OM5230SC OM5231SC OM5232SC
Contextual Info: OM5227SC OM 5229SC OM5231SC OM5228SC OM5230SC OM5232SC HIGH EFFICIENCY RECTIFIER AND POWER SCHOTTKY IN ONE HERMETIC PACKAGE 15 Amp, 50 To 600 Volt, 35 n sec Rectifier And 15 Amp, 45 Volt Schottky Combined in JEDEC TO-258AA Package FEATURES • Small Size, High Current

4982

Abstract: ds34c87 IGBT GS 125OC SFH6186-4 SPM6G070-060D SPM6M020-060D
Contextual Info: SENSITRON SEMICONDUCTOR SPM6M020-060D TECHNICAL DATA Datasheet 4982, Rev. – Three-Phase MOSFET BRIDGE, With Gate Driver and Optical Isolation, 600 VOLT, 20 AMP Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE PARAMETER SYMBOL

IXFM20N60

Abstract: SHD239608
Contextual Info: SHD239608 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 703, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: • 600 Volt, 0.35 Ohm MOSFET • Isolated and Hermetically Sealed • Surface Mount Package • Electrically equivalent to IXFM20N60 MAXIMUM RATINGS

IXTM20N60

Abstract: SHD239607 mosfet 300V 10A type
Contextual Info: SHD239607 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 623, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: • 600 Volt, 0.35 Ohm MOSFET • Isolated and Hermetically Sealed • Surface Mount Package • Electrically equivalent to IXTM20N60 MAXIMUM RATINGS

mosfet 300v 10a

Contextual Info: SENSITRON SEMICONDUCTOR SHD239607 TECHNICAL DATA DATA SHEET 623, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 600 Volt, 0.35 Ohm MOSFET œ Isolated and Hermetically Sealed œ Surface Mount Package œ Electrically equivalent to IXTM20N60 MAXIMUM RATINGS

Contextual Info: SENSITRON SEMICONDUCTOR SHD239607 TECHNICAL DATA DATA SHEET 623, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 600 Volt, 0.35 Ohm MOSFET œ Isolated and Hermetically Sealed œ Surface Mount Package œ Electrically equivalent to IXTM20N60 MAXIMUM RATINGS

mosfet 300V 10A

Abstract: 300v 10 amp n-channel mosfet
Contextual Info: SENSITRON SEMICONDUCTOR SHD225608 TECHNICAL DATA DATA SHEET 915, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 600 Volt, 20 Amp, 0.35 Ohm MOSFET œ Isolated and Hermetically Sealed MAXIMUM RATINGS RATING GATE TO SOURCE VOLTAGE CONTINUOUS DRAIN CURRENT

Amp. mosfet 1000 watt

Abstract: SHD225608
Contextual Info: SENSITRON SEMICONDUCTOR SHD225608 TECHNICAL DATA DATA SHEET 915, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 600 Volt, 20 Amp, 0.35 Ohm MOSFET œ Isolated and Hermetically Sealed MAXIMUM RATINGS RATING GATE TO SOURCE VOLTAGE CONTINUOUS DRAIN CURRENT

sic marking e6

Abstract: sic marking e7
Contextual Info: SENSITRON SEMICONDUCTOR SPM1002 Technical Data DATASHEET 5278, Rev. - THREE-PHASE IGBT BRIDGE with SiC DIODES, BRAKE MOSFET and INTEGRATED BRAKE RESISTOR DESCRIPTION: • 600 VOLT, 30 AMP, THREE PHASE IGBT BRIDGE  FAST SWITCHING 3RD GENERATION IGBT 

Contextual Info: SENSITRON SEMICONDUCTOR SHD218513 SHD218513A SHD218513B TECHNICAL DATA DATA SHEET 747, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 600 Volt, 0.60 Ohm, 11A MOSFET œ Isolated Hermetic Metal Package œ Fast Switching œ Low RDS on œ Electrically Equivalent to IRFPC50

Contextual Info: SHD258624 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4975, REV. - HERMETIC POWER MOSFET N-CHANNEL DESCRIPTION: A 600 VOLT, 44 AMP, 0.15 RDS ON MOSFET IN A HERMETIC TO-267 PACKAGE. MAX. RATINGS / ELECTRICAL CHARACTERISTICS (AT Tj=25 C UNLESS OTHERWISE SPECIFIED).

Contextual Info: SENSITRON SEMICONDUCTOR SHD218513 SHD218513A SHD218513B TECHNICAL DATA DATA SHEET 747, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 600 Volt, 0.60 Ohm, 11A MOSFET œ Isolated Hermetic Metal Package œ Fast Switching œ Low RDS on œ Electrically Equivalent to IRFPC50

MOSFET 50 amp 1000 volt

Abstract: 50 Amp 100 volt mosfet 400 amp 20 volt rectifier 50 Amp 300 volt diode 15 amp 1000 Volt Rectifier OM5227SC OM5228SC OM5229SC OM5230SC OM5231SC
Contextual Info: b7fiTQ73 Q Q G G 7 M Ô 43E D 4 ¡OMNI OM5227SC OM5228SC OM5229SC OM5231SC OM523QSC OM5232SC HIGH EFFICIENCY RECTIFIER AND POWER SCHOTTKY IN ONE HERMETIC PACKAGE 0 H N I R E L CORP 15 Ampj 50 To 600 Volt, 35 n sec Rectifier And 15 Amp, 45 Volt Schottky Combined Irr»

SMM70N10

Abstract: SFF70N10M SFF70N10Z
Contextual Info: SFF70N10M SFF70N10Z SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 70 AMP 600 VOLT 0.030Ω N-CHANNEL POWER MOSFET DESIGNER'S DATA SHEET FEATURES: • Rugged construction with poly silicon gate

SFF70N10M

Abstract: SMM70N10
Contextual Info: S im ili PREL.MINARY SFF70N10M SFF70N10WZ SOLID STATE DEVICES, INC CA 14849 Firestone Boulevard - La Mirada, 90638 Phone: (714 670-SSDI (7734) Fax: (714) 522-7424 Designer’s Datasheet 70 AMP 600 VOLT 0.030 Q N-CHANNEL POWER MOSFET | FEATURES: • •

rectifier diode with piv of 30v

Abstract: power diode with piv of 30v 500 watt half bridge schematic DIODE RECTIFIER BRIDGE 25A, 50V BRIDGE-RECTIFIER PFCM-1500C
Contextual Info: SENSITRON SEMICONDUCTOR PFCM-1500C TECHNICAL DATA DATA SHEET 4159, REV. – NON-HERMETIC POWER FACTOR CORRECTION MODULE FEATURES: • • • • SEALED PACKAGE 600 VOLT, 0.21 OHM, 26.0A MOSFET ULTRAFAST DIODE RECTIFIER BRIDGE • 1500/3000 WATT PFC • HEAT SINK MOUNTING

15N60

Abstract: K 15N60
Contextual Info: Tfl SAMSUNG SEMICO NDUCT OR INC ^ r E SSM15N55/15N60 SSH15N55/15N60 OODSaiD T- Ä ^ 4 NNELm i POWER MOSFETS - e iÄ ” Preliminary Specifications PRODUCT SUMMARY 600 Volt, 0.5 Ohm SFET Part Number Vos RDS on SSM15N55 550V 0.5Q 15A SSM15N60

25A, 50V BRIDGE-RECTIFIER

Abstract: PFCM-1500M rectifier diode piv 26A RECTIFIER BRIDGE 600 watt amps schematic
Contextual Info: SENSITRON SEMICONDUCTOR PFCM-1500M TECHNICAL DATA DATA SHEET 4160, REV. – HERMETIC POWER FACTOR CORRECTION MODULE FEATURES: • HERMETIC PACKAGE • 600 VOLT, 0.21 OHM, 26.0A MOSFET • • RECTIFIER BRIDGE • 1500/3000 WATT PFC • HEAT SINK MOUNTING ULTRAFAST DIODE

500 watt half bridge schematic

Abstract: 25A, 50V BRIDGE-RECTIFIER PFCM-1500C
Contextual Info: SENSITRON SEMICONDUCTOR PFCM-1500C TECHNICAL DATA DATA SHEET 4159, REV. – NON-HERMETIC POWER FACTOR CORRECTION MODULE FEATURES: • • • • SEALED PACKAGE 600 VOLT, 0.21 OHM, 26.0A MOSFET ULTRAFAST DIODE RECTIFIER BRIDGE • 1500/3000 WATT PFC • HEAT SINK MOUNTING

500 watt half bridge schematic

Abstract: 26A RECTIFIER BRIDGE 25A, 50V BRIDGE-RECTIFIER PFCM-1500M IR rectifier diode 100A 800V power diode with piv of 30v
Contextual Info: SENSITRON SEMICONDUCTOR PFCM-1500M TECHNICAL DATA DATA SHEET 4160, REV. – HERMETIC POWER FACTOR CORRECTION MODULE FEATURES: • HERMETIC PACKAGE • 600 VOLT, 0.21 OHM, 26.0A MOSFET • • RECTIFIER BRIDGE • 1500/3000 WATT PFC • HEAT SINK MOUNTING ULTRAFAST DIODE

SML60EUZ06B

Contextual Info: SML60EUZ06B Enhanced Ultrafast Recovery Diode 600 Volt, 60Amp TECHNOLOGY Back of Case The planar passivated and enhanced ultrafast recovery Cathode diode features a triple charge control action utilising Semelab’s Graded Buffer Zone technology combined with

CW2013

Abstract: sic marking e6
Contextual Info: SENSITRON SEMICONDUCTOR SPM1001 Technical Data DATASHEET 5361, Rev. - THREE-PHASE IGBT BRIDGE with SiC DIODES, BRAKE MOSFET and INTEGRATED BRAKE RESISTOR DESCRIPTION: • 600 VOLT, 50 AMP, THREE PHASE IGBT BRIDGE  SILICON CARBIDE SiC 20A 600V ANTI PARALLEL DIODES – ZERO RECOVERY AND NO