6003A Search Results

Contextual Info: UL924 Enclosed 20 AMP Automatic Power Transfer Control Relay TITLE 24 120 277 COMPLIANT CALIFORNIA EMERGENCY LIGHTING BYPASS CONTROLS VAC PROJECT INFORMATION Project Name Catalog No. Date Hubbell Building Automation’s enclosed 20 Amp Emergency Power Transfer

epson printer board

Abstract: ARM9TDMI AT91RM9200 SDRAM ps2 controller "Audio Interfaces" vga lcd driver s1d113806 SD Card and MMC Reader RM9200-DK "Display Controller"
Contextual Info: AT91RM9200-DK The ARM9 development platform AT91 ARM 7 & ARM 9 The AT91RM9200-DK development platform Flash 2MB / SDRAM 64MB / DataFlash 4-32MB / EEPROM 32-128KB Compact Flash / SmartMedia / SmartCard / SD Card Slot 115kbits/s IrDA transceiver Modem port with hardware handshaking

Contextual Info: DSEC 60-03A DSEC 60-03AR HiPerFREDTM Epitaxial Diode IFAV = 2x 30 A VRRM = 300 V trr = 30 ns with common cathode and soft recovery VRSM VRRM V V 300 300 300 300 TO-247 AD Type DSEC 60-03A DSEC 60-03AR A C A Version AR A C A A C A C TAB A = Anode, C = Cathode

ecg semiconductors master replacement guide

Abstract: ecg master replacement guide mkl b32110 siemens mkp B32650 c945 p 331 ks transistor IC,MASTER master replacement guide Kennlinie KTY 10-6 siemens b32110 A2005 transistor
Contextual Info: Liebe Schuricht-Kunden, Ihre Zufriedenheit ist unser größtes Anliegen. Aus diesem Grunde versuchen wir, Ihnen Informationen und Ware stets zum richtigen Zeitpunkt verfügbar zu machen. Das gilt insbesondere auch für die Produkte der Siemens AG mit den drei

60-03A

Contextual Info: DSEP 30-03A HiPerFREDTM Epitaxial Diode IFAV = 30 A VRRM = 300 V trr = 30 ns with soft recovery VRSM VRRM V V 300 300 Type C A TO-247 AD C DSEP 30-03A A C TAB A = Anode, C = Cathode, TAB = Cathode Symbol Conditions Maximum Ratings IFRMS IFAVM TC = 135°C; rectangular, d = 0.5

Contextual Info: □IXYS DSEC 60-03A Advanced Technical Data HiPerFRED Epitaxial Diode with Common Cathode and Soft Recovery V RSM V V RRM 2x 30 A FAV V RRM 300 V t rr 30 ns TO-247 AD Type V 300 300 C TAB DSEC 60-03A A = Anode, C = Cathode, TAB = Cathode Symbol Test Conditions

dsep 2x91-03a

Abstract: DSEC 240-04A DSEP 2X31-12A dsep 12-12a 2x61-06A
Contextual Info: 3= J- HiPerFRED Diodes Kl V RRM '1f a v @ T1 c d=0.5 V ► N ew K3 DSEP. DSEE. lFAV = 8 - 2x120 A Type T ^FSM VF @ 10 ms m ax. A °C 45°C A V lF = 150°C A t rr ^RM @ - d i / d t typ- typ. TVJ=25 °C ns A T V, DSEC. ^VJM ^thJC DSEP 2x. o = 100°C

Contextual Info: This document is not intended for viewing onscreen. It is best viewed when printed and read from paper. Depending on your printer, you may need to select “Shrink to Fit” in the print dialog to ensure that the document prints correctly. [6003A] ASAHI KASEI

Contextual Info: DSEP 60-03A HiPerFREDTM Epitaxial Diode IFAV = 60 A VRRM = 300 V = 30 ns trr with soft recovery VRSM VRRM V V 300 300 Type A C TO-247 AD C DSEP 60-03A A C TAB A = Anode, C = Cathode, TAB = Cathode Symbol Conditions Maximum Ratings IFRMS IFAVM TC = 110°C; rectangular, d = 0.5

transistor 12n60c

Abstract: 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET
Contextual Info: ISOPLUS Summary Title Page Isolated Discrete Packages A4 - 1 ISOPLUS247TM A4 - 2 ISOPLUS i4-PACTM A4 - 3 ISOPLUS247 – ISOPLUS i4-PACTM Isolated Discrete Packages ISOPLUS247™ is the DCB isolated version of the PLUS247™-package TO247 without a mounting hole . The design

12N60c equivalent

Abstract: 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q
Contextual Info: ISOPLUS Family ISOPLUS220 ISOPL US247™ ISOPLUS ¡4-PAC™ IS O P LU S 22rM Isolated Discrete Packages IS O P LU S 247™ is th e D C B is o la te d version o f th e P L U S 247™ -package TO 2 4 7 w ith o u t a m o u n tin g h o le . T h e d e s ig n o f th is n e w p a c k a g e (p a te n t

Contextual Info: 3521 N orth Chapel H ill Road « McHenry, IL 60050 6 0 * F a s - 3 1 5 o is b •c 5 7 8 - E - h N ew Sub-M iniature V oice/D ata Coupling Transformers 1 1 SPT- C O i!• “ W f?DS ttf h ' l p i j w w v v . p r W H 010 SPT011 SPT012 SPT020 SPT021 SPT022 023

1N5985A

Abstract: 1N5986A 1n59 5989A 6007A
Contextual Info: <g> 1N5985A thru MOTOROLA 1N6025A 500 M IL L IW A T T H E R M E T IC A L L Y SEALED GLASS SILIC O N ZENER DIODES 500 M IL L IW A T T GLASS ZENER DIODES 2 .4 -1 10 VOLTS . . . A c o m p le te line o f 5 0 0 m W Z ener D iodes o ffe rin g th e fo llo w in g

60-03AR

Abstract: DPG60C300HJ
Contextual Info: DSEC 60-03AR HiPerFREDTM Epitaxial Diode IFAV = 2x30 A VRRM = 300 V trr = 30 ns with common cathode and soft recovery VRSM VRRM V V 300 300 A Type C A ISOPLUS 247TM A DSEC 60-03AR A C Isolated back surface gn A A = Anode, C = Cathode Maximum Ratings TC = 135°C; rectangular, d = 0.5

Contextual Info: DSEP 30-03A HiPerFREDTM Epitaxial Diode IFAV = 30 A VRRM = 300 V = 30 ns trr with soft recovery VRSM VRRM V V 300 300 Type A C TO-247 AD C DSEP 30-03A A C TAB A = Anode, C = Cathode, TAB = Cathode Symbol Conditions Maximum Ratings IFRMS IFAVM TC = 145°C; rectangular, d = 0.5

60-03A

Contextual Info: DSEP 60-03A HiPerFREDTM Epitaxial Diode IFAV = 60 A VRRM = 300 V trr = 30 ns with soft recovery VRSM VRRM V V 300 300 Type A C TO-247 AD C DSEP 60-03A A C TAB A = Anode, C = Cathode, TAB = Cathode Symbol Conditions Maximum Ratings IFRMS IFAVM TC = 110°C; rectangular, d = 0.5

7n60b

Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
Contextual Info: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3

Contextual Info: DSEP 30-03A HiPerFREDTM Epitaxial Diode IFAV = 30 A VRRM = 300 V trr = 25 ns with soft recovery VRSM VRRM V V 300 300 Type A C TO-247 AD C DSEP 30-03A A C TAB D4 A = Anode, C = Cathode, TAB = Cathode Symbol Conditions Maximum Ratings IFRMS IFAVM TC = 140°C; rectangular, d = 0.5

60-03A

Abstract: SMPS 30
Contextual Info: DSEP 60-03A HiPerFREDTM Epitaxial Diode IFAV = 60 A VRRM = 300 V trr = 30 ns with soft recovery VRSM VRRM V V 300 300 Type A C TO-247 AD C DSEP 60-03A A C TAB D4 Conditions Maximum Ratings IFRMS IFAVM TC = 110°C; rectangular, d = 0.5 IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine

60-03AR

Contextual Info: DSEC 60-03AR HiPerFREDTM Epitaxial Diode IFAV = 2x30 A VRRM = 300 V trr = 30 ns with common cathode and soft recovery VRSM VRRM V V 300 300 A Type C A ISOPLUS 247TM A DSEC 60-03AR A C A Isolated back surface A = Anode, C = Cathode Symbol Conditions Maximum Ratings

60-03A

Contextual Info: DSEC 60-03A DSEC 60-03AR HiPerFREDTM Epitaxial Diode IFAV = 2x 30 A VRRM = 300 V trr = 30 ns with common cathode and soft recovery VRSM VRRM V V 300 300 300 300 ISOPLUS 247TM TO-247 AD Type Version A DSEC 60-03A DSEC 60-03AR A C A Version AR A C A A C A A = Anode, C = Cathode

Contextual Info: Advanced Technical Information HiPerFREDTM Epitaxial Diode DSEP 60-03A IFAV = 60 A VRRM = 300 V trr = 30 ns with soft recovery Preliminary Data VRSM VRRM V V 300 300 Type A C TO-247 AD C DSEP 60-03A A C TAB A = Anode, C = Cathode, TAB = Cathode Symbol Test Conditions

UAA2001

Abstract: MC8500 micromodule m68mm19 1N9388 74ALS643 2N6058 MC145026 2N5160 MOTOROLA MC3340 equivalent pn3402
Contextual Info: MOTOROLA Semiconductors THE EUROPEAN MASTER SELECTION 1982 The total num ber of standard Sem iconductor products available from M otorola ex­ ceeds 15 0 0 0 device types. To most of our custom ers this total presents an overw helm ing choice. The European Master Selection lists approxim ately 4 0 0 0 preferred devices that re­

1200 va ups circuit diagram

Abstract: 30-06BR DSEC16-06A dse*60-06A y 803A DSEP 15-06A dsep 12-12a dsep 2x91-03a 30-04A 6006B
Contextual Info: HiPer Fast Recovery Epitaxial Diodes Reg. Nr. 2743-02 HiPerFREDTM Contents Package style Type Voltage Current 1 TO-220 AC 2 TO-247 AD 2a ISOPLUS 247 TM 3 TO-268 AA 4 TO-220 AB 5 TO-247 AD 5a ISOPLUS 247 TM 6 SOT-227 B, miniBLOC Circuit Diagram Page VRRM IFAV