600A IGBT 100KHZ Search Results

Contextual Info: Spec.No.IGBT-SP-10011-R3 P1/4 6in1 IGBT Module MBB600TV6A PRELIMINARY SPECIFICATION Silicon N-channel IGBT 1. FEATURES * High speed, low loss IGBT module. * Low thermal impedance due to direct liquid cooling. * High reliability, high durability module. 2. ABSOLUTE MAXIMUM RATINGS (Tc=25oC )

Contextual Info: IGBT MODULE Spec.No.IGBT-SP-06005 R3 P1/8 MBN600E45A Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEATURES  High speed, low loss IGBT module.  Low driving power due to low input capacitance MOS gate.  Low noise due to ultra soft fast recovery diode.

MBN600E45A

Abstract: 600A 500v igbt L130N
Contextual Info: IGBT MODULE Spec.No.IGBT-SP-06005 R2 P1/8 MBN600E45A Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode.

Contextual Info: Dual IGBT Module Spec.No.IGBT-SP-10006-R4 MBM600F17D PRELIMINARY SPECIFICATION Silicon N-channel IGBT FEATURES * High speed, low loss IGBT module. * Low driving power due to low input capacitance MOS gate. * Low noise due to ultra soft fast recovery diode.

Contextual Info: Dual IGBT Module Spec.No.IGBT-SP-10006-R4 MBM600F17D PRELIMINARY SPECIFICATION Silicon N-channel IGBT FEATURES * High speed, low loss IGBT module. * Low driving power due to low input capacitance MOS gate. * Low noise due to ultra soft fast recovery diode.

MBN600E45A

Abstract: 600A 500v igbt
Contextual Info: Spec.No.IGBT-SP-06005R0 IGBT MODULE MBN600E45A Preliminary Specification. Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode.

CM600HG-130H

Contextual Info: CM600HG-130H Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Single IGBTMOD HVIGBT Module 600 Amperes/6500 Volts A D D D M8 NUTS (6 TYP.) C C C F E B F E E L E E G M Description: Powerex IGBTMOD™ Modules are designed for use in switching

CM600HG-130H

Abstract: CM600HG IGBT 6500v cm508
Contextual Info: CM600HG-130H Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 Single IGBTMOD HVIGBT Module 600 Amperes/6500 Volts A D D D M8 NUTS (6 TYP.) C C C F E B F E E L E E G M Description: Powerex IGBTMOD™ Modules are designed for use in switching

MBN600C20

Abstract: 600A igbt 100khz
Contextual Info: IGBT MODU ODULE MBN600C20 Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEAT EATURES RES 2-M8 * High thermal fatigue durability. 2-M4 delta Tc=70°C,N>20,000cycles * low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD).

MBN600C33A

Abstract: MBN600C33
Contextual Info: IGBT MODU ODULE MBN600C33A Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEAT EATURES RES * High thermal fatigue durability. 2-M8 2-M4 delta Tc=70°C,N>20,000cycles * low noise due to built-in free-wheeling 4-φ5.8 diode - ultra soft fast recovery diode(USFD).

Contextual Info: IGBT MODULE Spec.No.IGBT-SP-04010R5 P1 MBM600E17D Silicon N-channel IGBT FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.

Contextual Info: IGBT MODULE Spec.No.IGBT-SP-04010R6 MBM600E17D Silicon N-channel IGBT FEATURES  High speed, low loss IGBT module.  Low driving power due to low input capacitance MOS gate.  Low noise due to ultra soft fast recovery diode.  High reliability, high durability module.

Measurement of stray inductance for IGBT

Abstract: circuit diagram for igbt hitachi igbt igbt module p11
Contextual Info: IGBT MODULE Spec.No.IGBT-SP-04010R4 P1 MBM600E17D Silicon N-channel IGBT FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.

Contextual Info: IGBT MODULE Spec.No.IGBT-SP-04010R6 MBM600E17D Silicon N-channel IGBT FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.

Contextual Info: MITSUBISHI HVIGBT MODULES CM600E2Y-34H HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM600E2Y-34H ● IC . 600A ● VCES . 1700V

hvigbt diode

Abstract: CM600E2Y-34H
Contextual Info: MITSUBISHI HVIGBT MODULES CM600E2Y-34H HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM600E2Y-34H ● IC . 600A ● VCES . 1700V

CM600HB-90H

Abstract: 7400 ic diagram
Contextual Info: MITSUBISHI HVIGBT MODULES CM600HB-90H HIGH POWER SWITCHING USE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM600HB-90H ● IC . 600A ● VCES . 4500V

PER12

Contextual Info: MITSUBISHI HVIGBT MODULES CM600DY-34H HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM600DY-34H ● IC . 600A ● VCES . 1700V

Converter for Induction Heating

Abstract: igbt for HIGH POWER induction heating CM600DY-34H
Contextual Info: MITSUBISHI HVIGBT MODULES CM600DY-34H HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM600DY-34H ● IC . 600A ● VCES . 1700V

CM600E2Y-34H

Contextual Info: MITSUBISHI HVIGBT MODULES Y AR LIMIN on. ange. ificati h l spec ct to c a finaare subje t o n is s it is m h li e: T tric Notice parame Som CM600E2Y-34H PRE HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE

Contextual Info: MITSUBISHI HVIGBT MODULES CM600HG-130H 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM600HG-130H ● IC . 600A ● VCES . 6500V

CM600DY-34H

Abstract: transistor su 312
Contextual Info: MITSUBISHI HVIGBT MODULES Y AR LIMIN on. ange. ificati h l spec ct to c a finaare subje t o n is s it is m h li e: T tric Notice parame Som CM600DY-34H PRE HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE

mbm600

Contextual Info: IGBT MODULE Spec.No.IGBT-SP-07034 R1 MBM600E17E TARGET SPEC. Silicon N-channel IGBT 1700V E version OUTLINE DRAWING Unit in mm FEATURES * Soft switching behavior & low conduction loss: Soft low-injection punch-through with trench gate IGBT. * Low driving power: Low input capacitance

CM600HB-90H

Abstract: bipolar transistor 124 e
Contextual Info: MITSUBISHI HVIGBT MODULES Y AR LIMIN on. ange. ificati h l spec ct to c a finaare subje t o n is s it is m h li e: T tric Notice parame Som CM600HB-90H PRE HIGH POWER SWITCHING USE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules