600V, DIODE DC Search Results

G8060

Abstract: ruru8060 RUR 0820 TB-01
Contextual Info: [ /Title RUR G8060 /Subject (80A, 600V Ultrafa st Diode) /Autho r () /Keywords (80A, 600V Ultrafa st Diode, Intersil Corporation, semiconductor, Avalanche Energy Rated, Switch ing Power Supplies, Power Switch ing Cir- RURU8060 Data Sheet October 2001 File Number

R1560

Abstract: R1560P2 IRF450 ISL9R1560P2 TA49410
Contextual Info: [ /Title ISL9 R1560 P2 /Subje ct (15A, 600V Stealth Diode) /Autho r () /Keyw ords (Intersi l Corpor ation, semico nducto r, 15A, 600V Stealth ™ Diode, TO220AC ) /Creato r () /DOCI NFO pdfmar k [ /Page ISL9R1560P2 TM Data Sheet September 2000 File Number

r860p2

Abstract: 860P2
Contextual Info: ISL9R860P2 Data Sheet [ /Title ISL9R 860P2 /Subjec t (8A, 600V Stealth Diode) /Autho r () /Keyw ords (8A, 600V Stealth ™ Diode, Intersil Corpor ation, semico nducto r, to220ac) /Creato r () /DOCI NFO pdfmar k [ /Page Mode /UseO utlines /DOC March 2001

sec irf840

Abstract: ISL9R860P2 R860P2
Contextual Info: [ /Title ISL9R 860P2 /Subjec t (8A, 600V Stealth Diode) /Autho r () /Keyw ords (8A, 600V Stealth ™ Diode, Intersil Corpor ation, semico nducto r, to220ac) /Creato r () /DOCI NFO pdfmar k [ /Page Mode /UseO utlines /DOC ISL9R860P2 TM Data Sheet September 2000

R1560G2

Abstract: IRF450 ISL9R1560G2 TA49410 dt3800
Contextual Info: [ /Title ISL9R 1560G 2 /Subjec t (15A, 600V Stealth Diode) /Autho r () /Keyw ords (Intersi l Corpor ation, semico nducto r, 15A, 600V Stealth ™ Diode, TO247) /Creato r () /DOCI NFO pdfmar k [ /Page Mode /UseO ISL9R1560G2 TM Data Sheet September 2000

W20NM60

Abstract: STF20NM60FD w20nm60fd P20NM60FD p20nm60 p20nm60f mosfet 600V 100A ST stp20nm60fd
Contextual Info: STF20NM60FD - STP20NM60FD STW20NM60FD N-channel 600V - 0.26Ω - 20A - TO-220 - TO-220FP - TO-247 FDmesh Power MOSFET with fast diode General features Type VDSS RDS(on) ID Pw STF20NM60FD 600V <0.29Ω 20A 192W STP20NM60FD 600V <0.29Ω 20A 45W STW20NM60FD

P11NM60

Abstract: p11nm60fdfp b11nm60
Contextual Info: STB11NM60FD - STB11NM60FD-1 STP11NM60FD - STP11NM60FDFP N-channel 600V - 0.40Ω - 11A - TO-220/TO-220FP/D2PAK/I2PAK FDmesh Power MOSFET with fast diode General features Type VDSS RDS(on) ID STB11NM60FD 600V <0.45Ω 11A STB11NM60FD-1 600V <0.45Ω 11A

Contextual Info: STB11NM60FD - STB11NM60FD-1 STP11NM60FD - STP11NM60FDFP N-channel 600V - 0.40Ω - 11A - TO-220/TO-220FP/D2PAK/I2PAK FDmesh Power MOSFET with fast diode General features Type VDSS RDS(on) ID STB11NM60FD 600V <0.45Ω 11A STB11NM60FD-1 600V <0.45Ω 11A

RG 2006 10A 600V

Contextual Info: STF20NM60D - STP20NM60FD STW20NM60FD N-channel 600V - 0.26Ω - 20A - TO-220 - TO-220FP - TO-247 FDmesh Power MOSFET with fast diode General features Type VDSS RDS(on) ID Pw STF20NM60D 600V <0.29Ω 20A 192W STP20NM60FD 600V <0.29Ω 20A 45W STW20NM60FD

JESD97

Abstract: STB11NM60FD STB11NM60FD-1 STP11NM60FD STP11NM60FDFP
Contextual Info: STB11NM60FD - STB11NM60FD-1 STP11NM60FD - STP11NM60FDFP N-channel 600V - 0.40Ω - 11A - TO-220/TO-220FP/D2PAK/I2PAK FDmesh Power MOSFET with fast diode General features Type VDSS RDS(on) ID STB11NM60FD 600V <0.45Ω 11A STB11NM60FD-1 600V <0.45Ω 11A

w20nm60

Abstract: w20nm60fd P20NM60FD STF20NM60D F20NM60D STP20NM60FD STW20NM60FD p20nm60 mosfet 600V 100A ST
Contextual Info: STF20NM60D - STP20NM60FD STW20NM60FD N-channel 600V - 0.26Ω - 20A - TO-220 - TO-220FP - TO-247 FDmesh Power MOSFET with fast diode General features Type VDSS RDS(on) ID Pw STF20NM60D 600V <0.29Ω 20A 192W STP20NM60FD 600V <0.29Ω 20A 45W STW20NM60FD

Contextual Info: RHRG3060_F085 30A, 600V Hyperfast Rectifier Features Max Ratings 600V, 30A • High Speed Switching ( trr=45ns(Typ.) @ IF=30A ) The RHRG3060_F085 is an Hyperfast diode with soft recovery characteristics (trr < 45ns). It has half the recovery time of ultrafast diode and is of silicon nitride

Contextual Info: RHRG1560CC_F085 15A, 600V Hyperfast Rectifier Features Max Ratings 600V, 15A • High Speed Switching ( trr=26ns(Typ.) @ IF=15A ) The RHRG1560CC_F085 is an Hyperfast diode with soft recovery characteristics (trr < 55ns). It has half the recovery time of ultrafast diode and is of silicon nitride

G20N60B3D

Abstract: HGTG20N60B3D LD26 RHRP3060 G20N60B3
Contextual Info: HGTG20N60B3D Semiconductor 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode November 1997 Features Description • 40A, 600V at TC = 25oC • Hyperfast Anti-Parallel Diode The HGTG20N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and

Contextual Info: RHRG1560_F085 15A, 600V Hyperfast Rectifier Features Max Ratings 600V, 15A • High Speed Switching ( trr=26ns(Typ.) @ IF=15A ) The RHRG1560_F085 is an Hyperfast diode with soft recovery characteristics (trr < 55ns). It has half the recovery time of ultrafast diode and is of silicon nitride

12N60D1D

Abstract: 12n60d1
Contextual Info: HGTG12N60D1D 12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode Package Features • 12A,600V JE D E C S T Y LE TO -247 • Latch Free Operation • Typical Fall Time <500ns • Low Conduction Loss • With Anti-Parallel Diode • tRR < 60ns Description

20n60b3d

Abstract: G20N60B
Contextual Info: HGTG20N60B3D 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Package Features • 40A, 600V at T c = +25°C JEDEC STYLE TO-247 • Typical Fall Time - 140ns at +150°C • Short Circuit Rated • Low Conduction Loss • Hyperfast Anti-Parallel Diode

g3n60c3d

Abstract: HGT1S3N60C3D HGT1S3N60C3DS HGT1S3N60C3DS9A HGTP3N60C3D
Contextual Info: S E M I C O N D U C T O R HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode May 1996 Features Packaging JEDEC TO-220AB • 6A, 600V at TC = +25oC EMITTER COLLECTOR GATE • 600V Switching SOA Capability

12N60B3D

Abstract: HGT1S12N60B3D HGT1S12N60B3DS HGT1S12N60B3DS9A HGTG12N60B3D HGTP12N60B3D TA49188 TB334
Contextual Info: HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3D, HGT1S12N60B3DS Semiconductor 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode December 1997 Features Description • 27A, 600V, TC = 25oC This family of MOS gated high voltage switching devices

HGT1S12N60C3DR

Abstract: HGT1S12N60C3DRS HGTG12N60C3DR HGTP12N60C3DR TB334 12N60C3 TO-262AA Package equivalent 44J1
Contextual Info: HGTG12N60C3DR, HGTP12N60C3DR, HGT1S12N60C3DR, HGT1S12N60C3DRS 24A, 600V, Rugged, UFS Series N-Channel IGBT with Anti-Parallel Ultrafast Diode February 1998 Features Description • 24A, 600V at TC = 25oC This family of IGBTs was designed for optimum performance

Contextual Info: HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS H A R R IS semiconductor 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode May 1996 Packaging Features JEDEC TO-220AB • 6A, 600V at Tc = +25°c EMITTER . 600V Switching SOA Capability • Typical Fall Time - 130ns at T j = +150°C

G7N60C3D

Abstract: G7N60 TA49121 HGT1S7N60C3D HGT1S7N60C3DS HGT1S7N60C3DS9A HGTP7N60C3D
Contextual Info: HGTP7N60C3D, HGT1S7N60C3D, HGT1S7N60C3DS S E M I C O N D U C T O R 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode May 1996 Features Packaging JEDEC TO-220AB • 14A, 600V at TC = +25oC • • • • • EMITTER COLLECTOR GATE 600V Switching SOA Capability

hg 3a 1004

Abstract: BT 139 F applications note
Contextual Info: HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS ¡H A R R IS S E M I C O N D U C T O R 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode May1996 Packaging Features JEDEC TO -220AB • 6A, 600V at Tc = +25°C EMITTER • 600V Switching SOA Capability

100n60

Contextual Info: Preliminary Technical Information IXXK100N60B3H1 IXXX100N60B3H1 XPTTM 600V GenX3TM w/ Diode VCES IC90 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 10-30kHz Switching = = ≤ = 600V 100A 1.80V 150ns TO-264 (IXXK) Symbol Test Conditions Maximum Ratings