600V,4A DIODE Search Results

CEF04N6

Abstract: CEF04N6 equivalent CEP04N6 cef04n6 TRANSISTOR equivalent CEB04N6 CEI04N6
Contextual Info: CEP04N6/CEB04N6 CEI04N6/CEF04N6 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP04N6 600V 2.5Ω 4A 10V CEB04N6 600V 2.5Ω 4A 10V CEI04N6 600V 2.5Ω 4A CEF04N6 600V 2.5Ω 4A 10V e 10V D Super high dense cell design for extremely low RDS(ON).

CEF04N6

Abstract: CEP04N6 CEF04N6 equivalent CEB04N6 CEI04N6 SWITCHING DIODE 600V 2A
Contextual Info: CEP04N6/CEB04N6 CEI04N6/CEF04N6 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP04N6 600V 2.5Ω 4A 10V CEB04N6 600V 2.5Ω 4A 10V CEI04N6 600V 2.5Ω 4A CEF04N6 600V 2.5Ω 4A 10V e 10V D Super high dense cell design for extremely low RDS(ON).

Contextual Info: 1 2 D2PAK TO-220 1 - Cathode 2 - Anode Back of Case - Cathode 1 2 1 2 APT4SC60K APT4SC60SA 600V 600V 4A 4A SILICON CARBIDE SCHOTTKY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • PFC And Forward Topologies • Schottky Barrier • Switching Losses Nearly

4a 400V ultra fast diode d2pak

Abstract: GPL6NC60D STGBL6NC60D STGBL6NC60DT4 STGDL6NC60D STGDL6NC60DT4 STGFL6NC60D STGPL6NC60D GFL6NC60D
Contextual Info: STGBL6NC60D - STGDL6NC60D STGFL6NC60D - STGPL6NC60D N-channel 600V - 6A - DPAK / D2PAK / TO-220 / TO-220FP Hyper fast IGBT Features Type VCES IC @100°C STGBL6NC60D STGDL6NC60D STGPL6NC60D STGFL6NC60D 600V 600V 600V 600V 8A 7A 8A 4A • Very high frequency operation

GF8NC60KD

Abstract: JESD97 STGF8NC60KD
Contextual Info: STGF8NC60KD N-channel 600V - 4A - TO-220FP Short circuit rated PowerMESH IGBT Features Type VCES VCE sat Typ @25°C IC @100°C STGF8NC60KD 600V 2.2V 4A • Lower on voltage drop (Vcesat) ■ Lower CRES / CIES ratio (no cross-conduction susceptibility) ■

Contextual Info: R6004ENJ Nch 600V 4A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.980W ID 4A PD 40W (2) LPT(S) (SC-83) (1) (3) lFeatures lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source

zener diode 4.7 v

Contextual Info: STP4NM60 N-CHANNEL 600V - 1.4Ω - 4A TO-220 Zener-Protected MDmesh Power MOSFET TARGET DATA • ■ ■ ■ ■ ■ TYPE VDSS RDS on ID STP4NM60 600V < 1.6 Ω 4A TYPICAL RDS(on) = 1.4 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY

Contextual Info: R6004END Nch 600V 4A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.980W ID 4A PD 20W (2) CPT3 (SC-63) <SOT-428> (1) (3) lFeatures lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source

Contextual Info: R6004END Nch 600V 4A Power MOSFET Data Sheet lOutline VDSS 600V RDS on (Max.) 0.980W ID 4A PD 20W (2) CPT3 (SC-63) <SOT-428> (1) (3) lFeatures lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 20V. (1) Gate (2) Drain (3) Source

Contextual Info: R6004ENJ Nch 600V 4A Power MOSFET Data Sheet lOutline VDSS 600V RDS on (Max.) 0.980W ID 4A PD 40W (2) LPT(S) (SC-83) (1) (3) lFeatures lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 20V. (1) Gate (2) Drain (3) Source

Contextual Info: R6004ENX Nch 600V 4A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 980mW ID 4A PD 40W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.

STL4NM60

Contextual Info: STL4NM60 N-CHANNEL 600V - 1.5Ω - 4A PowerFLAT MDmesh Power MOSFET PROPOSAL DATA • ■ ■ ■ ■ ■ TYPE VDSS RDS on ID STL4NM60 600V < 1.8Ω 4A TYPICAL RDS(on) = 1.5Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE

Contextual Info: R6004ENX Nch 600V 4A Power MOSFET Data Sheet lOutline VDSS 600V RDS on (Max.) 980mW ID 4A PD 40W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 20V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.

4A600V

Abstract: 600V,4A DIODE 4A,600V YB311S6
Contextual Info: YB311S6 4A ( 600V / 4A ) Outline drawings, mm FAST RECOVERY DIODE 10.5MAX. 4.5MAX. Ø3.2+0.2 -0.1 2.0 17.0±0.3 4.7 6.0 3 1.2 13.0MAX. 3.7 1 0.8 5.08 Features Insulated package fully molding High voltage by mesa design 2.7 0.4 JEDEC EIAJ High reliability

Contextual Info: FFP04H60S tm Features 4A, 600V Hyperfast 2 Rectifier • High Speed Switching, rrt < 45ns @ IF = 4A The FFP04H60S is a hyperfast 2 rectifier and silicon nitride passivated ion-implanted epitaxial planar construction. • High Reverse Voltage and High Reliability

FFPF04S60S

Abstract: FFPF04S60STU
Contextual Info: STEALTH II Rectifier FFPF04S60S tm Features 4A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 25ns @ IF = 4A The FFPF04S60S is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.

FFP04S60S

Abstract: FFP04S60STU F04S
Contextual Info: STEALTH II Rectifier FFP04S60S tm Features 4A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 25ns @ IF = 4A The FFP04S60S is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.

FFPF60SB60DSTU

Contextual Info: STEALTH II Rectifier FFPF60SB60DS tm Features 4A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 25ns @ IF = 4A The FFPF60SB60DS is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.

mosfet 337

Abstract: Vdss 2000V
Contextual Info: MITSUBISHI Neh POWER MOSFET FS4KM-12 HIGH-SPEED SWITCHING USE FS4KM-12 • VDSS . 600V • TDS ON (MAX) . 2.6SÌ • ID . 4A

Contextual Info: FFPF04H60S tm Hyperfast 2 Rectifier Features 4A, 600V Hyperfast 2 Rectifier • High Speed Switching, rrt < 45ns • High Reverse Voltage and High Reliability • Low Forward Voltage, VF < 2.1V @ 4A • RoHS compliant The FFPF04H60S is a hyperfast 2 rectifier and silicon nitride

R460p2

Abstract: ISL9R460S2 ISL9R460S3S ISL9R460S3ST TA49408 TB334 ISL9R460P2
Contextual Info: ISL9R460P2, ISL9R460S2, ISL9R460S3S 4A, 600V Stealth Diode General Description Features • Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . . tb / ta > 3 The ISL9R460P2, ISL9R460S2 and ISL9R460S3S are Stealth™ diodes optimized for low loss performance in

Contextual Info: STEALTH II Rectifier FFPF60SB60DS tm Features 4A, 600V STEALTHTM II Rectifier • High Speed Switching, rrt < 25ns @ IF = 4A • High Reverse Voltage and High Reliability The FFPF60SB60DS is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.

Contextual Info: ISL9R460P2, ISL9R460S2, ISL9R460S3S 4A, 600V Stealth Diode General Description Features • Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . . tb / ta > 3 The ISL9R460P2, ISL9R460S2 and ISL9R460S3S are Stealth™ diodes optimized for low loss performance in

Contextual Info: STEALTH II Rectifier FFP04S60S tm Features 4A, 600V STEALTHTM II Rectifier • High Speed Switching, rrt < 25ns @ IF = 4A • High Reverse Voltage and High Reliability The FFP04S60S is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.