600V 30 KHZ IGBT Search Results
600V 30 KHZ IGBT Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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GT50J123 |
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IGBT, 600 V, 59 A, TO-3P(N) |
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GT20J121 |
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IGBT, 600 V, 20 A, TO-220SIS |
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GT30J121 |
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IGBT, 600 V, 30 A, TO-3P(N) |
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GT30J122A |
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IGBT, 600 V, 30 A, TO-3P(N) |
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GT20J341 |
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IGBT, 600 V, 20 A, Built-in Diodes, TO-220SIS |
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600V 30 KHZ IGBT Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Advance Technical Information IXXQ30N60B3M XPTTM 600V IGBT GenX3TM VCES = IC110 = VCE sat tfi(typ) = (Electrically Isolated Tab) 600V 19A 1.85V 125ns Extreme Light Punch Through IGBT for 5-30 kHz Switching OVERMOLDED (IXXQ.M) OUTLINE Symbol |
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IXXQ30N60B3M IC110 125ns 30N60B3D1 | |
75N60Contextual Info: Preliminary Technical Information IXXH75N60B3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 75A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR |
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IXXH75N60B3D1 IC110 125ns O-247 IF110 062in. 75N60B3 75N60 | |
Contextual Info: Preliminary Technical Information XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXXH75N60B3D1 Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 75A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR |
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IC110 IXXH75N60B3D1 125ns O-247 IF110 75N60B3 | |
IXXA50N60B3
Abstract: IXXH50N60B3 50N60B3D1
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IXXA50N60B3 IXXP50N60B3 IXXH50N60B3 IC110 O-263 IC110 50N60B3D1 IXXH50N60B3 | |
Contextual Info: Preliminary Technical Information 600V XPTTM IGBTs GenX3TM VCES = 600V IC110 = 50A VCE sat ≤ 1.80V IXXA50N60B3 IXXP50N60B3 IXXH50N60B3 TO-263 AA (IXXA) Extreme Light Punch Through IGBT for 5-30 kHz Switching G E C (Tab) TO-220AB (IXXP) Symbol Test Conditions |
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IC110 IXXA50N60B3 IXXP50N60B3 IXXH50N60B3 O-263 O-220AB 50N60B3D1 | |
30N60B3D
Abstract: IXXH30N60B3 IXXH30N60
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IXXH30N60B3 IC110 125ns O-247 062in. 30N60B3D1 30N60B3D IXXH30N60B3 IXXH30N60 | |
Contextual Info: Preliminary Technical Information XPTTM 600V GenX3TM w/ Diode MMIX1X100N60B3H1 Electrically Isolated Tab VCES = 600V IC90 = 60A VCE(sat) ≤ 1.80V Medium-Speed Low-Vsat PT IGBT for 10-30 kHz Switching C G Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C |
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MMIX1X100N60B3H1 0-06A | |
Contextual Info: XPTTM 600V IGBTs GenX3TM IXXA50N60B3 IXXP50N60B3 IXXH50N60B3 VCES = 600V IC110 = 50A VCE sat 1.80V TO-263 (IXXA) Extreme Light Punch Through IGBT for 5-30 kHz Switching G E C (Tab) TO-220 (IXXP) Symbol Test Conditions Maximum Ratings VCES VCGR |
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IXXA50N60B3 IXXP50N60B3 IXXH50N60B3 IC110 O-263 O-220 50N60B3D1 3-13-A | |
75N60B3D1
Abstract: IXXH75N60B3
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IXXH75N60B3 IC110 125ns O-247 062in. 75N60B3D1 IXXH75N60B3 | |
Contextual Info: Preliminary Technical Information XPTTM 600V GenX3TM w/ Diode MMIX1X100N60B3H1 Electrically Isolated Tab VCES = 600V IC90 = 60A VCE(sat) ≤ 1.80V Medium-Speed Low-Vsat PT IGBT for 10-30 kHz Switching C G Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C |
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MMIX1X100N60B3H1 0-06A | |
75N60B3D1Contextual Info: Advance Technical Information XPTTM 600V IGBT GenX3TM VCES IC110 VCE sat tfi(typ) IXXH75N60B3 Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 75A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C |
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IC110 IXXH75N60B3 125ns O-247 75N60B3D1 | |
IXXH50N60B3D1Contextual Info: Advance Technical Information XPTTM IGBT 600V GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXXH50N60B3D1 Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 50A 1.80V 135ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C |
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IC110 IXXH50N60B3D1 135ns O-247 IF110 50N60B3D1 IXXH50N60B3D1 | |
30N60B3D
Abstract: 30N60B3 IXXH30N60B3D1
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IXXH30N60B3D1 IC110 125ns O-247 IF110 062in. 30N60B3D1 30N60B3D 30N60B3 IXXH30N60B3D1 | |
75N60B3
Abstract: IXXH75N60B3D1 75n60
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IXXH75N60B3D1 IC110 125ns O-247 IF110 062in. 75N60B3 IXXH75N60B3D1 75n60 | |
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IXXH30N60B3D1Contextual Info: Advance Technical Information XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXXH30N60B3D1 Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 30A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C |
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IC110 IXXH30N60B3D1 125ns O-247 IF110 30N60B3D1 IXXH30N60B3D1 | |
IXXH50N60B3D1
Abstract: 50N60B3D1 18A100
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IXXH50N60B3D1 IC110 135ns O-247 IF110 062in. 50N60B3D1 IXXH50N60B3D1 18A100 | |
Contextual Info: Preliminary Datasheet SGP20N60HS SGW20N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: |
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SGP20N60HS SGW20N60HS SGW20N60HS O220AB O-247AC Q67040-S4498 Q67040-S4499 Jan-02 | |
Contextual Info: SKB06N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability |
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SKB06N60HS K06N60HS P-TO-263-3-2 Q67040S4544 P-TO-263-3-2 O-263AB) SKB06N60HS | |
K06N60Contextual Info: SKB06N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability |
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SKB06N60HS K06N60HS P-TO-220-3-45 SKB06N60HS K06N60 | |
k20N60hs
Abstract: k20n60
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SKW20N60HS PG-TO-247-3-1 Q67040-S4502 PG-TO-247-3-1 O-247AC) SKW20N60HS k20N60hs k20n60 | |
G15N60HS
Abstract: G15N60H
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SGB15N60HS PG-TO-263-3-2 O-263AB) G15N60ces. G15N60HS G15N60H | |
25E-4
Abstract: SKB06N60HS
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SKB06N60HS P-TO-263-3-2 O-263AB) O-263AB Q67040-S4544 Oct-02 25E-4 SKB06N60HS | |
SKW30N60HS
Abstract: IGBT SKW30N60HS Q67040-S4503
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SKW30N60HS P-TO-247-3-1 O-247AC) O-247AC Q67040-S4503 May-03 SKW30N60HS IGBT SKW30N60HS Q67040-S4503 | |
SGB15N60HS
Abstract: S4535 Q67040-S4535
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SGB15N60HS O-263AB Q67040-S4535 Jun-02 SGB15N60HS S4535 Q67040-S4535 |