600V 3A ULTRA FAST RECOVERY DIODE Search Results

Contextual Info: ｓ DIODE Type : 30PUB60 OUTLINE DRAWING 3A 600V 27ns FEATURES * Ultra-Fast Recovery * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability Maximum Ratings Approx Net Weight:1.21g Rating Repetitive Peak Reverse Voltage Average Rectified Output Current

Contextual Info: ｓ DIODE Type : 30PUA60 OUTLINE DRAWING 3A 600V 32ns FEATURES * Ultra-Fast Recovery * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability Maximum Ratings Approx Net Weight:1.21g Rating Repetitive Peak Reverse Voltage Average Rectified Output Current

Contextual Info: ｓ DIODE Type : 30PUA60 OUTLINE DRAWING 3A 600V 32ns FEATURES * Ultra-Fast Recovery * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability Maximum Ratings Approx Net Weight:1.21g Rating Repetitive Peak Reverse Voltage Average Rectified Output Current

30PUB60

Contextual Info: ｓ DIODE Type : 30PUB60 OUTLINE DRAWING 3A 600V 27ns FEATURES * Ultra-Fast Recovery * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability Maximum Ratings Approx Net Weight:1.21g Rating Repetitive Peak Reverse Voltage Average Rectified Output Current

Contextual Info: ｓ DIODE Type : 30PUA60 OUTLINE DRAWING 3A 600V 32ns FEATURES * Ultra-Fast Recovery * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability Maximum Ratings Approx Net Weight:1.21g Rating Repetitive Peak Reverse Voltage Average Rectified Output Current

30PUB60

Contextual Info: ｓ DIODE Type : 30PUB60 OUTLINE DRAWING 3A 600V 27ns FEATURES * Ultra-Fast Recovery * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability Maximum Ratings Approx Net Weight:1.21g Rating Repetitive Peak Reverse Voltage Average Rectified Output Current

Contextual Info: PD - 96425 IRG7RC07SDPbF Optimized for line frequency, 50/60Hz switching frequency Features • Standard speed IGBT for switching frequency less than 1KHz • Very low VCE ON • Ultra fast soft recovery diode C VCES = 600V IC = 8.5A, TC = 100°C G VCE(on) typ. =1.2V@IC = 3A

igbt based welding machine

Abstract: IRFR12
Contextual Info: PD - 96425 IRG7RC07SDPbF Optimized for line frequency, 50/60Hz switching frequency Features • Standard speed IGBT for switching frequency less than 1KHz • Very low VCE ON • Ultra fast soft recovery diode C VCES = 600V IC = 8.5A, TC = 100°C G VCE(on) typ. =1.2V@IC = 3A

E2 diode

Abstract: Diode B2x
Contextual Info: TRANSISTOR MODULE QCA30B/QCB30A40/60 UL;E76102 （M） QCA30B and QCB30A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. C2E1

500W TRANSISTOR AUDIO AMPLIFIER

Abstract: IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v SB550 transistor drive motor 10A with transistor P channel MOSFET P channel 600v 20a IGBT list of n channel power mosfet
Contextual Info: Power for Computing Analog Discrete Interface & Logic Power Solutions for • Conversion · Distribution · Management · Minimization There’s a lot more to power than power management. Optimizing system power in computing applications requires innovative products for power conversion, distribution,

ITO-220AB

Abstract: FMG-06J
Contextual Info: FMG-06J Ultra fast Plastic Power Rectifiers VOLTAGE: 600V CURRENT: 6.0A FEATURE ITO-220AB • Plastic package has Underwriters Laboratories Flammability Classification 94V-0 • Ideally suited for use in very high frequency switching power supplies, inverters and as free wheeling diodes

150A diode

Abstract: 300V switching transistor QCA150BA60 600v 3a ultra fast recovery diode high hfe transistor E7610
Contextual Info: TRANSISTOR MODULE Hi- QCA150BA60 UL;E76102 M QCA150BA60 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode trr 200ns . The mounting base of the module is

diode l2 32 diode

Abstract: STGD6NC60HD
Contextual Info: STGD6NC60HD N-channel 600V - 7A - DPAK Very fast PowerMESH IGBT General features • ■ Type VCES VCE sat Max @25°C IC @100°C STGD6NC60HD 600V <2.5V 7A Low on voltage drop (Vcesat) 3 1 Low CRES / CIES ratio (no cross-conduction susceptibility) ■ Very soft ultra fast recovery antiparallel diode

FGD3N60UNDF

Abstract: 600v 3a ultra fast recovery diode GENERAL SEMICONDUCTOR MARKING UJ 3a ultra fast diode UJ DIODE MARKING
Contextual Info: 600V, 3A Short Circuit Rated IGBT Applications Features • Small Industrial Inverter • • • • • General Description • Home appliance inverter-driven appplication - Air Conditioner, Refrigerator, Dish Washer, FAN and Pump Short circuit rated 10us

600v 3a ultra fast recovery diode

Abstract: SF3A 3A6H
Contextual Info: SF3A600H Semiconductor Ultra Fast Recovery Diode Applications PIN Connection • High speed switching and rectification • Switching mode power supply 2 Features • Ultra-fast reverse recovery time: trr=30ns Max. 2 1 • Small & compact type SMD package

Contextual Info: APT7F120B APT7F120S 1200V, 7A, 2.4Ω Max, trr ≤190ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

APT7F120B

Abstract: MOSFET 800V 3A 3A, 50V BRIDGE MOSFET 1200v 3a APT7F120S MIC4452
Contextual Info: APT7F120B APT7F120S 1200V, 7A, 2.90Ω Max, trr ≤190ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

3A, 50V BRIDGE

Abstract: 25c016
Contextual Info: APT7F120B APT7F120S 1200V, 7A, 2.4Ω Max, trr ≤190ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

APT7F120B

Abstract: APT7F120S MIC4452 DIODE 240v 3a
Contextual Info: APT7F120B APT7F120S 1200V, 7A, 2.4Ω Max, trr ≤190ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

APT7F120B

Abstract: APT7F120S MIC4452
Contextual Info: APT7F120B APT7F120S 1200V, 7A, 2.90Ω Max, trr ≤190ns N-Channel FREDFET TO -2 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

Contextual Info: TRANSISTOR MODULES- Q C A 150B A 60 U L;E 76102 M ) QCA1 5 0 B A 6 0 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistors. Each transistor has a reverse paral­ leled fast recovery diode ( t r r : 200ns). The mounting base of the

QCA150BA60

Contextual Info: TRANSISTOR MODULE（Hi-β） QCA150BA60 UL;E76102 （M） QCA150BA60 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode trr：200ns . The mounting base of the module is

stepper motor driver full bridge 6A

Abstract: mosfet 600V 20A 600v 30a IGBT 20NB50 PSO-36 igbt to220 Triac 3a 600v Motor Driver IC L293D L298N IGBT full bridge
Contextual Info: BRUSHLESS MOTOR DRIVE STMicroelectronics SOLUTIONS Mains Pre- Rectification Regulation Inverter Tacho/ Encoder Frequency Converter Servo Motor Drive Inverter Controller Tacho/ Encoder Inverter RECOMMENDED DEVICES MAIN FEATURES Mains Rectification BTW68/69 - xxx

Transistor RKU

Abstract: 200v 3A ultra fast recovery diode K4M diode ULTRA fast rectifier diode 30A 200V cathode common
Contextual Info: PD-2.336 Provisional Data Sheet International IORIRectifier HEXFRED HFA30PA60C ULTRA FAST, SOFT RECOVERY DIODE Major Ratings and Characteristics per Leg Characteristics Units VR Vr r m 600 V lF(AV) 15 A trr (typ) 19 ns Qrr (typ) 80 nC Ir r m 6 A di(rec)M/dt (typ)