600V 75A Search Results

Contextual Info: 75 = 75A-600V

IXXR110N60B4H1

Contextual Info: Advance Technical Information IXXR110N60B4H1 XPTTM 600V GenX4TM w/ Diode VCES IC110 VCE sat tfi(typ) (Electrically Isolated Tab) = = ≤ = 600V 75A 2.0V 27ns Extreme Light Punch Through IGBT for 5-30kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings

75N60

Contextual Info: Preliminary Technical Information IXXH75N60B3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 75A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR

IRGPC56

Contextual Info: INTERNATIONAL RECTIFIER SbE D • 4fl5S45S OOlDbaT 1 ■ Data Sheet No. PD<9.662 T - 3^-63 \. INSULATED GATE BIPOLAR TRANSISTOR International Rectifier IRGPC56 600V, 7SA 600V, 75A, TO-247AC IGBT FEATURES International Rectifier’s IRG series of Insulated Gate

25A 1200V

Abstract: PM100RLA120 PM150CLA120 PM75CLA120 PM75CLA060 PM75CLB120 transistor 600V 75A PM100CLA060 PM150CLA060 PM200CLA060
Contextual Info: Powerex L-Series IPM Grid 7/3/2003 VCES 25A 1200V PM25CLA120 PM25CLB120 600V 1200V Seven-Pack Six-Pack 600V Config *click on the products for additional information PM25RLA120 PM25RLB120 50A 75A 100A 150A 200A 300A PM50CLA060 PM50CLB060 PM75CLA060 PM75CLB060

Contextual Info: Preliminary Technical Information XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXXH75N60B3D1 Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 75A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR

Contextual Info: APTCV60TLM24T3G Three level inverter CoolMOS & Trench + Field Stop IGBT3 Power Module Trench & Field Stop IGBT3 Q2, Q3: VCES = 600V ; IC = 75A @ Tc = 80°C CoolMOS Q1, Q4: VDSS = 600V ; ID = 70A @ Tc = 80°C Application • Solar converter  Uninterruptible Power Supplies

SIDC30D60E6

Contextual Info: Preliminary SIDC30D60E6 Fast switching diode chip in EMCON-Technology FEATURES: • 600V EMCON technology 70 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC30D60E6 600V IF 75A A This chip is used for:

APT0406

Abstract: APT0502 NTC 10 thermistor
Contextual Info: APTCV60TLM24T3G Three level inverter CoolMOS & Trench + Field Stop IGBT Power Module Trench & Field Stop IGBT Q2, Q3: VCES = 600V ; IC = 75A @ Tc = 80°C CoolMOS Q1, Q4: VDSS = 600V ; ID = 70A @ Tc = 80°C Application • Solar converter • Uninterruptible Power Supplies

SIGC40T60R3

Contextual Info: SIGC40T60R3 3 IGBT Chip FEATURES: • 600V Trench & Field Stop technology • low VCE sat • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC40T60R3 VCE ICn 600V 75A This chip is used for:

Contextual Info: Preliminary SIDC30D60E6 Fast switching diode chip in EMCON-Technology FEATURES: • 600V EMCON technology 70 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type SIDC30D60E6 VR 600V IF 75A A This chip is used for:

Contextual Info: SIGC40T60R3 3 IGBT Chip FEATURES: • 600V Trench & Field Stop technology • low VCE sat • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC40T60R3 VCE ICn 600V 75A This chip is used for:

E80276

Abstract: PM75RVA060
Contextual Info: MITSUBISHI MITSUBISHI <INTELLIGENT <INTELLIGENT POWER POWER MODULES> MODULES> PM75RVA060 PM75RVA060 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM75RVA060 FEATURE • • • • 3φ 75A, 600V Current-sense IGBT for 20kHz switching 30A, 600V Current-sense regenerative brake IGBT

Contextual Info: SIGC39T60S 3 IGBT Chip FEATURES: • 600V Trench & Field Stop technology • low VCE sat • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC39T60S VCE ICn 600V 75A This chip is used for:

Servo Motor forward revers control

Abstract: E80276 PM75RVA060
Contextual Info: MITSUBISHI MITSUBISHI <INTELLIGENT <INTELLIGENT POWER POWER MODULES> MODULES> PM75RVA060 PM75RVA060 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM75RVA060 FEATURE • • • • 3φ 75A, 600V Current-sense IGBT for 20kHz switching 75A, 600V Current-sense regenerative brake IGBT

Contextual Info: APTCV60TLM45T3G Three level inverter CoolMOS & Trench + Field Stop IGBT3 Power Module Trench & Field Stop IGBT3 Q2, Q3: VCES = 600V ; IC = 75A @ Tc = 80°C CoolMOS Q1, Q4: VDSS = 600V ; ID = 38A @ Tc = 80°C Application • Solar converter  Uninterruptible Power Supplies

APT0406

Abstract: APT0502
Contextual Info: APTCV60TLM45T3G Three level inverter CoolMOS & Trench + Field Stop IGBT Power Module Trench & Field Stop IGBT Q2, Q3: VCES = 600V ; IC = 75A @ Tc = 80°C CoolMOS Q1, Q4: VDSS = 600V ; ID = 38A @ Tc = 80°C Application • Solar converter • Uninterruptible Power Supplies

Contextual Info: SIGC40T60R3 3 IGBT Chip FEATURES: • 600V Trench & Field Stop technology • low VCE sat • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC40T60R3 VCE ICn 600V 75A This chip is used for:

SIDC30D60E6

Contextual Info: Preliminary SIDC30D60E6 Fast switching diode chip in EMCON-Technology FEATURES: • 600V EMCON technology 70 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC30D60E6 600V IF 75A A This chip is used for:

Contextual Info: Preliminary SIDC30D60E6 Fast switching diode chip in EMCON-Technology FEATURES: • 600V EMCON technology 70 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type SIDC30D60E6 VR 600V IF 75A A This chip is used for:

SIDC30D60E

Contextual Info: Preliminary SIDC30D60E Fast switching diode chip in EMCON-Technology FEATURES: • 600V EMCON technology 70 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type VCE SIDC30D60E 600V ICn 75A A This chip is used for:

Contextual Info: MITSUBISHI MITSUBISHI <INTELLIGENT <INTELLIGENT POWER POWER MODULES> MODULES> PM75RVA060 PM75RVA060 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM75RVA060 FEATURE • • • • 3φ 75A, 600V Current-sense IGBT for 20kHz switching 30A, 600V Current-sense regenerative brake IGBT

SIDC30D60E6

Contextual Info: Preliminary SIDC30D60E6 Fast switching diode chip in EMCON-Technology FEATURES: • 600V EMCON technology 70 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC30D60E6 600V IF 75A A This chip is used for:

Contextual Info: APTCV60TLM24T3G Three level inverter CoolMOS & Trench + Field Stop IGBT3 Power Module Trench & Field Stop IGBT3 Q2, Q3: VCES = 600V ; IC = 75A @ Tc = 80°C CoolMOS Q1, Q4: VDSS = 600V ; ID = 70A @ Tc = 80°C Application • Solar converter • Uninterruptible Power Supplies