600V GAN Search Results

T32 fuse l 250v

Abstract: LPCC-20 LPJ600SP NOS 600 amp fuses LPSRK1712SP LPJ-20SP CDF30J3 EFJ30X-3PB6 fuse base IEC 269 KRPC2000SP
Contextual Info: Low Voltage, Branch Circuit Rated Fuses Page 12-14 15-16 Class Fuses Volts CC . . . . . . LP-CC . . . . . . . . . . . . . . . 600V . . . . . 17 FNQ-R . . . . . . . . . . . . . . . KTK-R . . . . . . . . . . . . . . . 600V . . . . . 600V . . . . . 18 19 600V . . . . .

Contextual Info: GaN 600V SBD < m Nihon Inter Electronics Corporation Gallium Nitride 600V SBD Vr-V Characteristics H //// -PFC Circuit Applied Reverse Voltage [V] -Reduce VF rise due to current collapse to below 20% Recovery waveform GaN vs Si Si GaN FSU05A60 SÌ-FRD/5A/600V

HRC Fuse HOLDER

Abstract: 400 amp hrc fuse HRC fuse CM20CF HRC Fuse 250V 20A HRC fuse 400a C30F APPLICATION OF hrc fuse 355 amp 660v hrc fuse 100CF
Contextual Info: Product Catalog Canadian Fuses & Holders Circuit Protection Table of Contents General Catalog Contents Page Canadian Fuses & Accessories Standard Code Fuses 250V & 600V Fuse Holders KOS/KON/PONC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .93

Demands for High-efficiency Magnetics in GaN Power Electronics

Abstract: 20n60cfd TPH3006
Contextual Info: APEC 2014, Fort Worth, Texas, March 16-20, 2014, IS2.5.3 Demands for High-efficiency Magnetics in GaN Power Electronics Yifeng Wu, Transphorm Inc. Table of Contents 1. 1st generation 600V GaN-on-Si HEMT properties and performance 2. GaN HEMT high-frequency application examples

400A GenX3TM IGBTs in New Proprietary SMPD Power Packages

Abstract: IXYS smpd IXYS MMIX1G320N60B3 solar ups features and classification
Contextual Info: Press Release Contact: Ronnie Ganitano IXYS Corporation 1590 Buckeye Dr. Milpitas Ca. 95035 Tel: 408-457-9000 IXYS Introduces 600V/400A GenX3TM IGBTs in New Proprietary SMPD Power Packages Milpitas, CA. and Biel, Switzerland. October 12, 2010 – IXYS Corporation NASDAQ:IXYS is pleased to

Holders

Contextual Info: CH Series Modular Fuse Holders Class J Class J – 600V 1-60A Features: • Choice of Indication: –easyID window to view indicator on Cooper Bussmann LPJ- amp SPI fuses. –Neon lamp open fuse indicator. • Comes in standard 1-, 2- & 3-Pole ganged assemblies

CH30J

Abstract: 2A1073 CH60J3 CH60-J3 30a dual pole E14853 CH60J3I 460V CH30J2 460VAC
Contextual Info: CH Series Modular Fuse Holders Class J Class J – 600V 1-60A Features: • Choice of Indication: –easyID window to view indicator on Cooper Bussmann LPJ- amp SPI fuses. –Neon lamp open fuse indicator. • Comes in standard 1-, 2- & 3-Pole ganged assemblies

Contextual Info: Preliminary Datasheet RJS6004WDPK 600V - 20A - Diode SiC Schottky Barrier Diode R07DS0897EJ0300 Rev.3.00 Jan 29, 2014 Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0004ZE-A

Contextual Info: Preliminary Datasheet RJS6005WDPK 600V - 30A - Diode SiC Schottky Barrier Diode R07DS0901EJ0200 Rev.2.00 Jan 28, 2014 Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0004ZE-A

Contextual Info: Preliminary Datasheet RJS6005WDPK 600V - 30A - Diode SiC Schottky Barrier Diode R07DS0901EJ0201 Rev.2.01 Jan 31, 2014 Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0004ZE-A

RJS6004TDPP-EJ

Contextual Info: Preliminary Datasheet RJS6004TDPP-EJ R07DS0896EJ0300 Rev.3.00 Jan 23, 2014 600V - 10A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A

RJS6005TDPP-EJ

Contextual Info: Preliminary Datasheet RJS6005TDPP-EJ R07DS0900EJ0300 Rev.3.00 Jan 23, 2014 600V - 15A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A

Contextual Info: Preliminary Datasheet RJP60V0DPM R07DS0669EJ0200 Rev.2.00 Apr 02, 2014 600V - 22A - IGBT Application: Inverter Features • High breakdown-voltage • Low Collector to Emitter saturation Voltage VCE sat = 1.5 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)

Contextual Info: Preliminary Datasheet BCR2PM-12RE R07DS1239EJ0200 Previous: REJ03G1468-0100 Rev.2.00 Dec 24, 2014 600V - 2A - Triac Low Power Use Features • Insulated Type • Planar Passivation Type • The product guaranteed maximum junction temperature 150°C. • IT (RMS) : 2 A

CM30CFB

Abstract: fuse base IEC 269 IEC 269 CM60CFB CM20CFB 20LSC CM100CFB 660V BS88 100 HRC fuse HRC Fuse BASE
Contextual Info: Bussmann Camaster HRC Fuse Holders CM_CFB 30, 60, and 100 Amps; 600V A.C. CAMASTER Ratings Rating Details Reference Fuse Accommodated 30 Amp For HRCI-CA Applications CM20CFB -C1F21B 30 Amp 60 Amp 100 Amp For HRCII Applications CM30CFB CM60CFB CM100CFB

Contextual Info: Preliminary Datasheet RJP60V0DPM-80 600V - 22A - IGBT Application: Inverter R07DS1036EJ0200 Rev.2.00 Apr 02, 2014 Features • High breakdown-voltage • Low collector to emitter saturation voltage VCE sat = 1.5 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)

BCR6CM-12RA

Contextual Info: Preliminary Datasheet BCR6CM-12RA R07DS1150EJ0100 Rev.1.00 Jan 24, 2014 600V - 6A - Triac Medium Power Use Features • IT RMS : 6 A • VDRM : 600 V • IFGTI, IRGTI, IRGT III : 30 mA (20 mA)Note6 • Non-Insulated Type • Planar Passivation Type Outline

Contextual Info: Preliminary Datasheet RJK6011DJA 600V - 0.1A - MOS FET High Speed Power Switching R07DS0873EJ0200 Rev.2.00 Jan 28, 2014 Features • Low on-resistance RDS on = 35 Ω typ. (at ID = 0.05 A, VGS = 10 V, Ta = 25°C) • Low drive current • High density mounting

Contextual Info: Preliminary Datasheet RJH60T04DPQ-A1 600V - 30A - IGBT Application:Current resonance circuit R07DS1191EJ0200 Rev.2.00 Apr 02, 2014 Features • Optimized for current resonance application • Low collector to emitter saturation voltage VCE sat = 1.5 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25°C)

Contextual Info: Preliminary Datasheet RJK6011DJE R07DS1153EJ0400 Previous: REJ03G1577-0300 Rev.4.00 Jan 28, 2014 600V - 0.1A - MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 35 Ω typ. (at ID = 0.05 A, VGS = 10 V, Ta = 25°C) • Low drive current

BCR20CM-12LB

Contextual Info: Preliminary Datasheet BCR20CM-12LB R07DS1151EJ0100 Rev.1.00 Jan 29, 2014 600V - 20A - Triac Medium Power Use Features • IT RMS : 20 A • VDRM : 600 V • IFGTI, IRGTI, IRGT III :30 mA(20mA) Note6 • Tj: 150 °C • Planar Passivation Type • Non-Insulated Type

Contextual Info: Preliminary Datasheet BCR25CM-12LB R07DS1152EJ0100 Rev.1.00 Jan 29, 2014 600V - 25A - Triac Medium Power Use Features • IT RMS : 25 A • VDRM : 600 V • IFGT I, IRGT I, IRGT III : 50 mA • Tj: 150 °C • Planar Passivation Type • Non-Insulated Type

Contextual Info: Preliminary Datasheet BCR1AM-12A R07DS0177EJ0400 Rev.4.00 Jul 31, 2014 600V-1A-Triac Low Power Use Features • IT RMS : 1 A • VDRM : 600 V • IFGTI , IRGTI, IRGT III : 7 mA • Non-Insulated Type • Planar Passivation Type Outline RENESAS Package code: PRSS0003EA-A

Contextual Info: Preliminary Datasheet BCR5CM-12RA R07DS1149EJ0100 Rev.1.00 Jan 23, 2014 600V - 5A - Triac Medium Power Use Features • IT RMS : 5 A • VDRM : 600 V • IFGT I, IRGT I, IRGT III : 15 mA (10 mA)Note6 • Non-Insulated Type • Planar Passivation Type Outline