600V PNP Search Results

Contextual Info: DATA SHEET C106B THRU C106M 4.0A SENSITIVE GATE SILICON CONTROLLED RECTIFIER 200V to 600V JEDEC TO-126 CASE DESCRIPTION The Central Semiconductor C106B Series are 4.0A, PNPN sensitive gate triggering silicon controlled rectifiers with voltages ranging from 200V to 600V. These devices are designed for applications such as temperature,

Contextual Info: r r u t m . _ TECHNOLOGY 25MHz, 600V/tis Op Amp KOTURCS DCSCMPTIOÍ1 • 25MHz Gain-Bandwidth ■ 600V/|iS Slew Rate ■ 2.5mA Maximum Supply Current The LT1357 is a high speed, very high slew rate opera­ tional amplifier with outstanding AC and DC performance.

K 1357

Abstract: buffered input 5v supply 30v LT1354 LT1355 LT1356 LT1357 LT1360 LT1365 g1432
Contextual Info: LT1357 25MHz, 600V/µs Op Amp U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 25MHz Gain-Bandwidth 600V/µs Slew Rate 2.5mA Maximum Supply Current Unity Gain Stable C-LoadTM Op Amp Drives All Capacitive Loads 8nV/√Hz Input Noise Voltage

Contextual Info: r r u TECHNOLOGY tm i LT1358/LT1359 Dual and Quad 25MHz, 600V/|lis Op Amps F€fflUR€S DCSCRIPTIOH • 25MHz Gain-Bandwidth ■ 600V/|xs Slew Rate ■ 2.5mA Maximum Supply Current per Amplifier The LT1358/LT1359 are dual and quad low power high ■ Unity Gain Stable

K 1358

Abstract: 130 c g03 LT1354 LT1355 LT1356 LT1357 LT1358 LT1360 LT1365 1358 TRANSISTOR
Contextual Info: LT1358/LT1359 Dual and Quad 25MHz, 600V/µs Op Amps U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO 25MHz Gain Bandwidth 600V/µs Slew Rate 2.5mA Maximum Supply Current per Amplifier Unity-Gain Stable C-LoadTM Op Amp Drives All Capacitive Loads

k 1358

Abstract: 1358 TRANSISTOR datasheet 1358 lt1359cn B 1359 MARKING 1358 LT1354 LT1355 LT1356 LT1357
Contextual Info: LT1358/LT1359 Dual and Quad 25MHz, 600V/µs Op Amps U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 25MHz Gain-Bandwidth 600V/µs Slew Rate 2.5mA Maximum Supply Current per Amplifier Unity Gain Stable C-LoadTM Op Amp Drives All Capacitive Loads

Contextual Info: r j u n LT1358/LT1359 m TECHNOLOGY Dual and Quad 25MHz, 600V/[is O p Amps FCHTURCS D€SCRIPTIOfl • 25MHz Gain-Bandwidth ■ 600V/ xs Slew Rate ■ 2.5mA Maximum Supply Current per Amplifier The LT1358/LT1359 are dual and quad low power high speed operational amplifiers with outstanding AC and DC

Contextual Info: LT1358/LT1359 Dual and Quad 25MHz, 600V/µs Op Amps FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO 25MHz Gain Bandwidth 600V/µs Slew Rate 2.5mA Maximum Supply Current per Amplifier Unity-Gain Stable C-LoadTM Op Amp Drives All Capacitive Loads

LT1357CN8

Contextual Info: _LT1357 r r u r m TECH N O LO G Y 25MHz, 600V/ is O p Am p F€RTUR€S DCSCRIPTIOfl • 25MHz Gain-Bandwidth ■ 600V/ns Slew Rate ■ 2.5mA Maximum Supply Current The LT1357 is a high speed, very high slew rate opera­ tional amplifier with outstanding AC and DC performance.

Contextual Info: r r u u m _ TECHNOLOGY DCSCRIPTIOÍ1 FEATURES • 2 5 M H z G a in Band w idth ■ 600V/ _is S le w Rate ■ 2 . 5 m A M a x im u m S u p p ly Current ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 25MHz, 600V/,us O p Am p

pnp transistor 600V

Abstract: KTA1716 600v pnp switching 600V PNP
Contextual Info: KEC SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. KTA1716 EPITAXIAL PLANAR PNP TRANSISTOR HIGH-VOLTAGE SWITCHING TRANSISTOR TELEPHONE POWER-SUPPLY USE. FEATURES • High Breakdown Voltage. : VCeo=-600V • Low V cE sat (Typ. -0.25V) • Fast Switching.

Contextual Info: r r u u m i _ TEC H N O LO G Y DCSCRIPTIOÍ1 FEATURES • 2 5 M H z G a in Band w idth ■ 600V/us S le w Ra te ■ 2 . 5 m A M a x im u m S u p p ly Current ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 25MHz, 600V/|is O p Am p

pnp transistor 600V

Abstract: 600V PNP
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTA1716 EPITAXIAL PLANAR PNP TRANSISTOR HIGH-VOLTAGE SWITCHING TRANSISTOR TELEPHONE POWER-SUPPLY USE. FEATURES • High Breakdown Voltage. : VCeo=-600V • Low V cE sat (Typ. -0.25V) • Fast Switching. • Wide SOA. ( I c = -300mA,

pnp transistor 600V

Abstract: TSA1765 600v pnp TRANSISTOR 0835
Contextual Info: TSA1765 High Voltage PNP Epitaxial Planar Transistor SOT-223 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCBO -600V BVCEO -560V IC -150mA VCE SAT Features ● ● Ordering Information Low Saturation Voltages High Breakdown Voltage Part No.

Contextual Info: SFT5094/5 SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 1 AMP 600 VOLTS HIGH VOLTAGE PNP TRANSISTOR DESIGNER'S DATA SHEET FEATURES: • BVCER to 600V.

Contextual Info: SFT5094-4 SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 1 AMP 600 VOLTS HIGH VOLTAGE PNP TRANSISTOR DESIGNER'S DATA SHEET FEATURES: • BVCER to 600V.

Contextual Info: SEMICONDUCTOR KTA1807D/L TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH VOLTAGE SWITCHING. POWER SUPPLY SWITCHING FOR TELEPHONES. A FEATURES I C J D High Voltage : VCEO=-600V. High Speed Switching Time. 1.0 s IC=-0.5A B : tf Low Collector Emitter Saturation Voltage.

Contextual Info: SFT5094/5 SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 1 AMP 600 VOLTS HIGH VOLTAGE PNP TRANSISTOR DESIGNER'S DATA SHEET FEATURES: • BVCER to 600V.

KTA1807D

Contextual Info: SEMICONDUCTOR KTA1807D/L TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH VOLTAGE SWITCHING. POWER SUPPLY SWITCHING FOR TELEPHONES. A FEATURES I C High Voltage : VCEO=-600V. J : tf D High Speed Switching Time. B 1.0 s IC=-0.5A Low Collector Emitter Saturation Voltage.

600B

Abstract: TS420-B
Contextual Info: TS420-B  SENSITIVE SCR FEATURES IT RMS =4A VDRM/VRRM = 400 or 600V IGT < 200µA A DESCRIPTION A The TS420-B series of SCR use a high performance TOPGLASS PNPN technology. The parts are intended for general purpose applications using surface mount technology.

TR0007A

Abstract: STX6905 STX7905 pnp transistor 600V transistor A 562
Contextual Info: PRELIMINARY STX6905 SOLID STATE DEVICES, INC. 14005 Stage Road * Santa Fe Springs, Ca 90670 Phone: 562 404-4474 * Fax: (562) 404-1773 1 AMP 600 VOLTS PNP TRANSISTOR DESIGNER'S DATA SHEET FEATURES: • • • • • • BVCBO 600V. Fast Switching. Low Leakage.

NTE5483

Abstract: NTE5480 NTE5481 NTE5482 NTE5484 NTE5485 NTE5486 NTE5487 NTE548
Contextual Info: NTE5480 thru NTE5487 Silicon Controlled Rectifier SCR 8 Amp Description: The NTE5480 through NTE5487 are multi–purpose PNPN silicon controlled rectifiers in a TO64 type package suited for industrial and consumer applications. These 8 amp devices are available in voltages ranging from 25V to 600V.

G C106B1

Abstract: C106D1 C106A1 C106B1 C106C1 C106E1 C106M1
Contextual Info: DATA SHEET C106A1 THRU C106M1 SILICON CONTROLLED RECTIFIER 100V to 600V JEDEC TO-202 CASE DESCRIPTION The Central Semiconductor C106A1 Series are PNPN Silicon Controlled Rectifiers designed for applications such as temperature, light, speed control, process and remote control, and warning systems where reliability of

Contextual Info: TS820-B  SENSITIVE SCR FEATURES IT RMS = 8A VDRM/VRRM = 400 to 600V IGT < 200µA A DESCRIPTION A The TS820-B series of SCR use a high performance TOPGLASS PNPN technology. The parts are intended for general purpose applications using surface mount technology.