60A 150V IGBT Search Results

igbt 150v 30a

Abstract: 7464 ic datasheet 60A 150V IGBT
Contextual Info: TYPICAL PERFORMANCE CURVES APT60GU30B APT60GU30S APT60GU30B_S 300V POWER MOS 7 IGBT TO-247 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

fairchild induction heater

Abstract: SGL60N90DG3 n-channel, 75v, 80a n-channel, 75v, 60a 12v dc to 8.5v dc 60A 150V IGBT
Contextual Info: SGL60N90DG3 N-CHANNEL IGBT FEATURES TO-264 * High Speed Switching * Low Saturation Voltage : VCE sat = 2.0 V (at IC=60A) * High Input Impedance * Built in Fast Recovery Diode 1 C APPLICATIONS * Home Appliance - Induction Heater - IH JAR - Micro Wave Oven

IXGH120N30B3

Abstract: 60A 150V IGBT
Contextual Info: GenX3TM 300V IGBT VCES = 300V IC110 = 120A VCE sat ≤ 1.7V IXGH120N30B3 Medium speed low Vsat PT IGBTs for 10-50 kHz switching Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 300 300 V V VGES VGEM Continuous

IXGQ240N30PB

Abstract: ixgq240n30 GQ240N30PB
Contextual Info: IXGQ240N30PB PolarTM High Speed IGBT VCES = 300V = 500A ICP VCE sat ≤ 1.6V For PDP Applications TO-3P Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VGES VGEM Continuous Transient ±20 ±30 V V G C E IC25 ICP IC(RMS) TC = 25°C (Chip Capability)

Contextual Info: GenX3TM 300V IGBT VCES = 300V IC110 = 120A VCE sat ≤ 1.7V IXGH120N30B3 Medium speed low Vsat PT IGBTs for 10-50 kHz switching Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 300 300 V V VGES VGEM Continuous

3 phase IGBT inverter

Abstract: igbt 150v 30a SMD DIODE BOOK 30N120D1 igbt 1600V 45A 40a 400v to-247 1600v 30A to247
Contextual Info: DATA BOOK BOOK 2000 1998 DATA New Products Check out the following new products for leading edge performance in Power Semiconductors: PRODUCT TYPES DESCRIPTION PART NUMBER Highest Current FETS and IGBTs in TO-247 Outline HiPerFET and IGBT switches in our PLUS247 ,

IXGH120N

Abstract: IXGH120N30C3 120n30c3
Contextual Info: Preliminary Technical Information GenX3TM 300V IGBT IXGH120N30C3 VCES IC110 VCE sat tfi(typ) High speed PT IGBTs for 50-150kHz switching Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 300 V VGES Continuous

S5J12

Abstract: GT60M104 2-21F2C
Contextual Info: TOSHIBA GT60M104 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 6 0 M 1 04 HIGH PO W ER SWITCHING APPLICATIONS Unit in mm High Input Impedance High Speed 20.5MAX. 0 3.3 ±0.2 : tf=0.4;i*s Max. .T Z i. Low Saturation Voltage : V g e (sat) = 3.7V (Max.)

GT60M301

Contextual Info: TOSHIBA GT60M301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT6QM3Q1 Unit in mm HIGH POWER SWITCHING APPLICATIONS • • • • The 3rd Generation FRD Included Between Emitter and Collector Enhancement-Mode High Speed IGBT tf=0.25,«s Typ.

30N30

Contextual Info: HiPerFASTTM IGBT IXGH30N30 VCES IC25 VCE sat tfi = = = = 300 V 60 A 1.6 V 180 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 300 V VGES Continuous ±20 V VGEM Transient ±30

Contextual Info: GT60M104 T O SH IB A TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 6 0 M 1 04 Unit in mm HIGH POWER SWITCHING APPLICATIONS High Input Impedance High Speed : tf=0.4^s Max. Low Saturation Voltage : Vqe (sat) = 3.7V (Max.) Enhancement-Mode

Contextual Info: GT60M104 T O SH IB A TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 6 0 M 1 04 Unit in mm HIGH POWER SWITCHING APPLICATIONS High Input Impedance High Speed : tf=0.4^s Max. Low Saturation Voltage : Vqe (sat) = 3.7V (Max.) Enhancement-Mode

smps igbt

Abstract: FFH30US30S igbt 150v 30a
Contextual Info: FGH50N3 300 V SMPS IGBT April 2013 FGH50N3 300 V SMPS IGBT General Description Features Using Fairchild 's planar technology, this IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This

Contextual Info: FGH50N3 300V, PT N-Channel IGBT General Description Features The FGH50N3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction

IXFX120N30T

Abstract: IXFK120N30T PLUS247 120N30T
Contextual Info: Advance Technical Information IXFK120N30T IXFX120N30T GigaMOSTM Power MOSFET VDSS ID25 = = 300V 120A Ω 24mΩ 200ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS

DC MOTOR SPEED CONTROL USING IGBT

Abstract: 800V 40A power mosfet full bridge 100v dc motor speed controller single phase DC MOTOR SPEED CONTROL USING IGBT PI controller of FOC Drive SMCV6G050-060 800V 40A mosfet SMCV6G040-120-1 motor driver full bridge mosfet 150v mosfet 1200V 40A
Contextual Info: . SENSITRON SEMICONDUCTOR SMCV6Series Digital Vector Drive PRODUCT BRIEF PB 5127, Rev A SENSORLESS BLDC MOTOR DIGITAL SPEED CONTROLLER The Digital Vector Motor Drive is a digital motor controller designed for high reliability and industrial motor control applications. This controller utilizes space vector modulation

Contextual Info: Advance Technical Information GigaMOSTM Power MOSFET VDSS ID25 IXFK120N30T IXFX120N30T = = 300V 120A Ω 24mΩ 200ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS

120N30P3

Abstract: IXFK120N30P3
Contextual Info: Advance Technical Information IXFK120N30P3 IXFX120N30P3 Polar3TM HiPerFETTM Power MOSFETs VDSS ID25 TO-264 IXFK G D S Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 300 300 V V VGSS VGSM Continuous

IXFK120N30P3

Contextual Info: Advance Technical Information Polar3TM HiPerFETTM Power MOSFETs VDSS ID25 IXFK120N30P3 IXFX120N30P3 TO-264 IXFK G D S Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 300 300 V V VGSS VGSM Continuous

Contextual Info: Preliminary Technical Information IXFK120N30P3 IXFX120N30P3 Polar3TM HiPerFETTM Power MOSFET VDSS ID25 = = 300V 120A  27m 250ns RDS on   trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) G D S Symbol Test Conditions

Contextual Info: Advance Technical Information MMIX1F160N30T GigaMOSTM TrenchTM HiperFETTM Power MOSFET VDSS ID25 = = trr ≤ RDS on ≤ (Electrically Isolated Tab) 300V 102A Ω 20mΩ 200ns D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G S Symbol Test Conditions

Contextual Info: Advance Technical Information GigaMOSTM TrenchTM HiperFETTM Power MOSFET MMIX1F160N30T VDSS ID25 = = trr ≤ RDS on ≤ (Electrically Isolated Tab) 300V 102A Ω 20mΩ 200ns D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G S Symbol Test Conditions

Contextual Info: Advance Technical Information GigaMOSTM Power MOSFET VDSS ID25 IXFN160N30T = = 300V 130A Ω 19mΩ 200ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S G Symbol Test Conditions Maximum Ratings

160N30T

Abstract: 100A MOSFET ixys IXFN160N30T
Contextual Info: Advance Technical Information IXFN160N30T GigaMOSTM Power MOSFET VDSS ID25 = = 300V 130A Ω 19mΩ 200ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S G Symbol Test Conditions Maximum Ratings