Untitled
Abstract: No abstract text available
Text: LED-CONVERTER UNIT PS-LD0301-020-B S (PRELIMINARY INFORMATION) DESCRIPTION : This low profile LED converter is developed for max. 3 LED-lines Optimized for Sharp: LQ121S1LG62 APPLICABLE: 1~3 LED lines (Serial Mode) Pout max. 7W LED Voltage max. 25Vdc Lamp Current max. 60mAdc
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PS-LD0301-020-B
LQ121S1LG62
25Vdc
60mAdc
LQ121S1LG62:
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TMT30077CT
Abstract: No abstract text available
Text: ELECTRICAL CHARACTERISTICS: Turns Ratio: 6-3 :(5-4):(2-7)=1:1:1.25±3% Inductance: L5-3 (6,4 connected) 14.5mH±10% @1kHz,0.1V,60mAdc DC Resistance: @25ºC (2-7) 2.0 Ohms Max (5-3)(6,4 connected) 2.2 Ohms Max Leakage Inductance: L5-3(6,4 connected,2-7short) 55uH Max @100kHz,0.1V
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60mAdc
100kHz
100pF
10kHz
100kHz
2000Vac
100uA
TMT30077CT
TMT30077CT
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Untitled
Abstract: No abstract text available
Text: LED-CONVERTER UNIT PS-LD0301-028-B S (PRELIMINARY INFORMATION) DESCRIPTION : This low profile LED converter is developed for max. 3 LED-lines Optimized for Sharp: LQ070Y3LG1C APPLICABLE: 2 LED lines (Serial Mode) Pout max. 7W LED Voltage max. 25Vdc Lamp Current max. 60mAdc
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PS-LD0301-028-B
LQ070Y3LG1C
25Vdc
60mAdc
LQ084V3DG02:
300mm,
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Untitled
Abstract: No abstract text available
Text: LED-CONVERTER UNIT PS-LD0401-081 S (22W) (PRELIMINARY INFORMATION) DESCRIPTION : This low profile LED converter is developed for 2 LED-lines. Optimized for Mitsubishi: AA084VG01 / AA084XB01 APPLICABLE: 2 LED lines LED Voltage max. 48Vdc Lamp Current per line: typ. 60mAdc
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PS-LD0401-081
AA084VG01
AA084XB01
48Vdc
60mAdc
UL94V-0
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PI122868
Abstract: No abstract text available
Text: PI122868 Transformer for ISDN U Interface Feature ♦ Operating temperature range: 00C to +700C ♦Idc: 60mA Specifications @ 250C Parameter Turn Ratio Condition Min. Typ. Max. Unit Pin 5-8 : (2-11) : (7-6) 0.8 : 1 : 0.8 ±2% @10KHz,100mV with 60mADC Pin(8-6) tie(5+7)
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PI122868
10KHz
100mV
60mADC
100KHz
100mV
PI122868
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Untitled
Abstract: No abstract text available
Text: TITLE TRANSFORMER HDSL 160 kB, 8 mH 1 : 1 SCHOTT 1000 PARKERS LAKE ROAD CORPORATION WAYZATA, MN 55391 SPECIFICATIONS 6. RETURN LOSS: 1-2-3-4 Ref 135 ohms 5-8 loaded 32 ohms @ 10-25 Khz > 20 dB 20 dB/DECADE ABOVE AND BELOW 1 END SCHOTT 29872 YYWW .780 MAX
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32ohm
60mADC,
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xl 1507
Abstract: IN270 1N270 JAN part marking lvb diode germanium 1n270 GE 141L gold bonded germanium diode 1N270 1N270 diode equivalent xl 4016 1N270
Text: ., i_ I TNcR=mml MI L-S- 195001200B 9 JUNE 1989 u lNG MIL-s-19500/2ooA 19 April 1968 MILITARY SPECIFICATION SEMICONDUCTOR OEVICE, OIOOE, GERMANIUM TYPE 1N270 JAN, JANTX, ANO JANTXV This specification is ments and Agencies 1. approved of the for use by all DepartDepartment
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195001200B
MIL-s-19500/2ooA
1N270
L-S-19500.
L-S-19500
xl 1507
IN270
1N270 JAN
part marking lvb
diode germanium 1n270
GE 141L
gold bonded germanium diode 1N270
1N270 diode equivalent
xl 4016
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Untitled
Abstract: No abstract text available
Text: TITLE TRANSFORMER, HDSL SCHOTT 1000 PARKERS LAKE ROAD CORPORATION WAYZATA, MN 55391 SPECIFICATIONS B 28888 PAGE 1 END 1 SCHOTT 28888 YYWW 8 1. INDUCTANCE: 1-2-3-4 @ 10 Khz, 0.1V = 3.5 mhy ±5% .780 MAX (19.81) 5 3. LEAKAGE INDUCTANCE: (1-2-3-4) @ 100 Khz,
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Khz-110
18Khz
610Khz
Khz-110Khz
60mADC,
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Untitled
Abstract: No abstract text available
Text: NTE454 MOSFET, N–Ch, Dual Gate, TV UHF/RF Amp, Gate Protected Description: The NTE454 is a depletion mode dual gate MOSFET transistor designed for VHF amplifier and mixer applications. Features: D Low Reverse Transfer Capacitance – Crss = 0.03pf Max
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NTE454
NTE454
20Vdc
30Vdc
200MHZ
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2N3700UB
Abstract: 2N3700 2n3019 equivalent 000-inch 2N3700 JAN 2N3019 2N3019S 2N3057A to-206aa
Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 LOW POWER NPN SILICON TRANSISTOR
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MIL-PRF-19500/391
2N3019
2N3019S
2N3057A
2N3700
2N3700UB
2N3700UB)
T4-LDS-0185
2N3700UB
2N3700
2n3019 equivalent
000-inch
2N3700 JAN
2N3019
2N3019S
2N3057A
to-206aa
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NTE454
Abstract: 200MHZ VG15
Text: NTE454 MOSFET, N–Ch, Dual Gate, TV UHF/RF Amp, Gate Protected Description: The NTE454 is a depletion mode dual gate MOSFET transistor designed for VHF amplifier and mixer applications. Features: D Low Reverse Transfer Capacitance – Crss = 0.03pf Max
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NTE454
NTE454
20Vdc
30Vdc
200MHZ
200MHZ
VG15
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MC145572
Abstract: PI122608 60mAdc
Text: YCL PI122608 Transformer for ISDN U Interface Feature • Designed to used to MOTORLA MC145572 • Transformer models with 1500Vrms isolation . chip. Specification Parameters Condition Min. Typ Max. Unit 26.25 mH Turn ratio line : (device) Pin(1-11) : (7-5) tie pin(12-2)
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PI122608
MC145572
1500Vrms
10KHz
100mV
10KHz-25KHz
300Hz-40KHz
500Hz
60mADC
MC145572
PI122608
60mAdc
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165BSC
Abstract: No abstract text available
Text: MCC omponents 21201 Itasca Street Chatsworth !"# $ % !"# BU323 Features • • • Designed for automotive ignition, switching regulator and motor control applications. With TO-3 package Photoglass passivation for reliability and stability
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BU323
165BSC
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u 6204
Abstract: MC145572
Text: defining a degree of excellence ISDN “U” INTERFACE TRANSFORMERS 0559-6204-00 and 0559-6204-01 TM0035 Bel introduces a new ISDN “U” Interface transformer. The transformer is designed to be used with the Motorola ISDN "U" Interface Chip MC145572. * Dielectric Strength - 1500 Vrms measured Primary to
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TM0035
MC145572.
CAN/CSA-C22
100mV
60mADC.
100kHz,
01VAC.
10kHz,
u 6204
MC145572
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2n3019 equivalent
Abstract: 2N3019S
Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 LOW POWER NPN SILICON TRANSISTOR
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MIL-PRF-19500/391
2N3019
2N3019S
2N3057A
2N3700
2N3700UB
2N3019)
2N3700UB)
T4-LDS-0185
2n3019 equivalent
2N3019S
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Untitled
Abstract: No abstract text available
Text: 6C 5V 767m ADC SCHOTTKY .0 7 0 (1 0 ) [1.78] <1) J+ •w PRI 1 6 - 40V 4 0 k - 1QQkHz .1 4 8 (8 ) [3.75] 24V 1 60mADC SEC FAST RECOVERY ~y .828 [21 .03] □ □ □ .05 8 (1 0 ) [1 -47] □ .0 3 9 (1 0 ) y [.99] ^1 ) Ao) 24V 1 60mADC FAST RECOVERY □ .1 2 4 (1 0 )
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60mADC
500VAC,
100kHz)
30430R
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SK70720
Abstract: SK70721
Text: HDSL Transformer DESIGNED DOR USE WITH LEVEL ONE HDSL 1C D.C. RESISTANCE 4-2 = 6-7 = 2 .3 5 OHMS ± 10% @ 20"C 2.10 OHMS ± 10% 9 - 1 0 = 2.10 OHMo^ INDUCTANCE : 3 .6 0 mH + 10% ± 10% @ 1KHz, 1.0 VAC, 0 / 1 60mADC, 4 - 2 , Ds LEAKAGE INDUCTANCE : 17.5/iH MAX. 10OKHz , lO O m A A C , 4 —2 TIE 6 + 10 , 7 + 9 Ls.
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SK70720
SK70721
0/160mADC,
10OKHz
-70dB
100KHz,
SK70721
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208H
Abstract: No abstract text available
Text: 2 .S c h e m a tic : 1. D im e n s io n a : Line Chip XF1313 -13H D S YYWW . \ ] ITT ] \ -8 - Dot Pin# Front view E 0 .098 Typ 0.030 Typ 6 10 3 .E l e c t r i c a l S p e c i f i c a t i o n s : 25°C 0.4-90 Max rl PIN 1 — 5 OCL: 2.0m H ±10% <910KHz 0.1V
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XF1313
-13HDS
MIL-STD-202G,
UL94V-D
El51556
102rnm)
-70dB
20KHz,
85Vrms,
2500Vrms
208H
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1N4532
Abstract: 1n4631 IN643 1n662 jantx 1N3064 1N4151 1N4154 1N4534 1N643 1N662
Text: 1N643; JAN 1N643 1N662; JAN 1N662 1N663; JAN 1N663 COMPUTER DIODE Switching FEATU RES DESCRIPTION • M etallurgical Bond T h is device is particularly suited to a pp licatio ns where m ediu m speed sw itching is required. M oisture free stability is ensured through herm etic
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1N643;
1N662;
1N663;
1N643
1N662
1N663
MIL-S-19500/256
1N662
1N4532
1n4631
IN643
1n662 jantx
1N3064
1N4151
1N4154
1N4534
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750510041
Abstract: 75051 750510
Text: C U ST O M ER TERMINAL RoH S LE A D P b — FR EE Sn96% , A g4% Ye s Ye s r 7 f— p|lGn) fc O w E -M ID C O M PART MUST INSERT FULLY TO SURFACE A IN RECOMMENDED GRID .021 SQ.(10) [.53] .100/.130 * [2.54/3.30] ELECTRICAL SPECIFICATIONS <D 25°C u n less otherw ise noted:
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10kHz,
0/60mADC,
100kHz,
2000VAC,
500VDC,
20k-l
L60950--
S60950
E205930
750510041
75051
750510
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Untitled
Abstract: No abstract text available
Text: 5 0 0 MAX. [1 2 .7 0 ] . 6 9 9 MAX. [1 7 .7 5 ] tn . 5 3 0 MAX. [13 .4 6 ] DOT LOCATES TERM. £ ° 1— CD < CD 2 o u o in 2 n 1 1 1 L 1 L l\ J \ #1 LOT CODE & DATE CODE C A A AREA REPRESENTS TERMINAL PAD DIMENSIONS G> .0 3 4 9 "T PRI (Line) & CD- [.8 6 ]
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200Hz
300kHz,
100kHz,
250Vrms.
150VDC.
51075R
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Untitled
Abstract: No abstract text available
Text: 1. Mechanical Dimensions: 0.490 Max 1— 0.030 0.098 D u ho ± 0 .0 0 5 _BJL T XFMRS iO r- o 2. Schematic: c B L ine S id e o o YYWW • o .o o s— i Min F yyuuy 5 A 1 0,530 Max 4 -0 Sense Tape Winding Electrical Specifications: @25°C -0 .0 2 0 ± 0.005
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XFADSL62S
UL94V-0
E151556
102mm)
10KHz
60mAdc,
100KHz
2000Vdc,
-75dB
XFADSL62S
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750510
Abstract: No abstract text available
Text: C U ST O M ER TERMINAL RoH S LE A D P b — FR EE Sn96% , A g4% Ye s Ye s P C 1“ k O w E - M ID C O M ELECTRICAL SPECIFICATIONS 25°C u n less otherw ise noted: TEST CONDITIONS VALUE D.C. RESISTANCE PARAMETER 1 -4 @20”C 5.05 ohms ±10% D.C. RESISTANCE
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10kHz,
50mVAC,
0/60mADC,
100kHz,
2000VAC,
500VDC,
150pF
750510
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Untitled
Abstract: No abstract text available
Text: Sn63%, Pb37% Sn96X, Ag4% LF1 = 15 I No Yes No Yes WURTH ELEKTRO N IK * DIMENSION MAY BE EXCEEDED WITH SOLDER ONLY MAX.* .500 MAX. —- .400 [10.16] [12.70] 41 - — □ “HZ .400 MAX. [10.16] if if PRI Line g> (D- 2o o Q 1 r* TERM. NO.’s FOR REF. ONLY
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Sn96X,
100kHz,
-76dB
160pF
IEC60950-1,
EN60950-1,
UL60950-1/
CSA60950-1
AS/NZS60950
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