60V 10A P TYPE MOSFET Search Results

dpak mosfet motor control DC

Abstract: STD10PF06 STD10PF06 equivalent TO252 dpak mosfet
Contextual Info: STD10PF06 P-CHANNEL 60V - 0.18 Ω - 10A IPAK/DPAK STripFET II POWER MOSFET • ■ ■ ■ ■ ■ ■ TYPE VDSS RDS on ID STD10PF06 60 V < 0.20 Ω 10 A TYPICAL RDS(on) = 0.18 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE APPLICATION ORIENTED

Contextual Info: STD10PF06 P-CHANNEL 60V - 0.18 Ω - 10A IPAK/DPAK STripFET II POWER MOSFET • ■ ■ ■ ■ ■ ■ TYPE VDSS RDS on ID STD10PF06 60 V < 0.20 Ω 10 A TYPICAL RDS(on) = 0.18 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE APPLICATION ORIENTED

STD10PF06

Abstract: STD10PF
Contextual Info: STD10PF06  P - CHANNEL 60V - 0.18 Ω - 10A TO-252 STripFET POWER MOSFET TYPE STD10PF06 • ■ ■ ■ ■ ■ V DSS R DS o n ID 60 V < 0.20 Ω 10 A TYPICAL RDS(on) = 0.18 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE APPLICATION ORIENTED

Contextual Info: TXC CORPORATION 4F, No.16, Sec.2, ChungYang S. Rd. PeiTou, Taipei, Taiwan TEL : 886-2-28941202 , 886-2-2895-2201 FAX : 886-2-28941206 , 886-2-2895-6207 www.txccorp.com SPECIFICATION FOR APPROVAL Customer : Product Type : MOSFET TXC PN : MA6008U10000000 Version

Contextual Info: TXC CORPORATION 4F, No.16, Sec.2, ChungYang S. Rd. PeiTou, Taipei, Taiwan TEL : 886-2-28941202 , 886-2-2895-2201 FAX : 886-2-28941206 , 886-2-2895-6207 www.txccorp.com SPECIFICATION FOR APPROVAL Customer : Product Type : MOSFET TXC PN : MA6008D10000000 Version

Contextual Info: TXC CORPORATION 4F, No.16, Sec.2, ChungYang S. Rd. PeiTou, Taipei, Taiwan TEL : 886-2-28941202 , 886-2-2895-2201 FAX : 886-2-28941206 , 886-2-2895-6207 www.txccorp.com SPECIFICATION FOR APPROVAL Customer : Product Type : MOSFET TXC PN : MA6008P10000000 Version

Contextual Info: 60V>U-X /17-MOSFET 60V SERIES POWER MOSFET • O U T L IN E D IM E N S IO N S 2SK2286 F 2 0 S 6 N 60v 20 a ■ R A TIN G S A b s o lu te Maxim um R a tin g s m in Id Ite m f-f; { Î'ÎnL^X S t o r a g e T e m p e r a tu r e A' T' C h a n n e l T e m p e ra tu r e

Contextual Info: TXC CORPORATION 4F, No.16, Sec.2, ChungYang S. Rd. PeiTou, Taipei, Taiwan TEL : 886-2-28941202 , 886-2-2895-2201 FAX : 886-2-28941206 , 886-2-2895-6207 www.txccorp.com SPECIFICATION FOR APPROVAL Customer : Product Type : MOSFET TXC PN : MA6004P10000000 Version

IGBT DRIVER ignition coil automotive

Abstract: mosfet to ignition coil HGT1S14N40G3VLS HUF76639 N-channel MOSFET to-247 50a TO-252 N-channel power MOSFET HGTP14N45G3VL ignition IGBTS 60V 60A TO-252 N-CHANNEL 60V 60A TO-252
Contextual Info: 107730 Auto Line Card_PW 8/24/00 7:48 PM Page 1 www.intersil.com Automotive Discrete Power Products UltraFET MOSFETs and IGBTs enhance the peak performance of automotive systems in the 21st century Intersil is proud to continue introducing exciting new families of

PAL 007 E MOSFET

Abstract: mosfet pal 007 PAL 007 b MOSFET PAL 007 MOSFET k 2545 MOSFET PAL 007 a MOSFET J373 2SJ373 F20S6P CF20S6P
Contextual Info: 60Vv'J-X MOSFET 60V SERIES POWER MOSFET W g - tf ä t ia O U T L IN E D IM E N S IO N S 2SJ373 F20S6P Mtëm • R A TIN G S ■ Absolute Maximum Ratings m Item s IE Symbol m m it Conditions m m Ratings w- i ± Unit Storage Temperature Tstg -5 5-150 °C .-V ■

Contextual Info: TXC CORPORATION 4F, No.16, Sec.2, ChungYang S. Rd. PeiTou, Taipei, Taiwan TEL : 886-2-28941202 , 886-2-2895-2201 FAX : 886-2-28941206 , 886-2-2895-6207 www.txccorp.com SPECIFICATION FOR APPROVAL Customer : Product Type : MOSFET TXC PN : MA6004F10000000 Version

K2286

Abstract: k 2543 MOSFET 2SK2286 F20S6N
Contextual Info: 6 0 V v 'J —X /t*7-M0SFET 60V SERIES POWER MOSFET O U T L IN E D IM EN SIO N S 2SK2286 F20S6N 60V 20a • RA TIN G S ■ Absolute Maximum Ratings « Item oS >-] Symbol a S to ra g e T em p eratu re Channel T em perature K u A > • v - x HEE D rain‘S o u rc e Voltage

STD10NF06

Abstract: STD10NF06L 6-8 B1
Contextual Info: STD10NF06L N-CHANNEL 60V - 0.1Ω - 10A DPAK STripFET POWER MOSFET PRELIMINARY DATA TYPE STD10NF06L VDSS RDS on ID 60V <0.12Ω 10A TYPICAL RDS(on) = 0.1Ω SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX “T4”) • ■ 3 1 DESCRIPTION

AN8610

Abstract: UF 407 Diode HIP2060AS1 HIP2060 HIP2060AS2 HIP2060AS3 MO-169 12v class d amplifier 70W
Contextual Info: HIP2060 60V, 10A Half Bridge Power MOSFET Array April 1998 Features Description • Two 10A Power MOS N-Channel Transistors The HIP2060 is a power half-bridge MOSFET array that consists of two matched N-Channel enhancement-mode MOS transistors. The advanced Intersil PASIC2 process technology used in this product utilizes efficient geometries that provides outstanding device performance and ruggedness.

2510T

Contextual Info: 60V>'J-X A 7 — MOSFET 60V SERIES POWER MOSFET O U T L IN E D IM E N S IO N S 2SK2281 F10E6N 60v 10a • Æ fè * R A TIN G S A b s o lu te Maxim um R a tin g s m R ti Ite m ^ * S to r a g e T e m p e ra tu re -f- -y 7 ^ ¡'/ni t*x C h a n n e l T e m p e ra tu re

IRF P CHANNEL MOSFET 200V 20A

Abstract: P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252
Contextual Info: 30V 1000V 200V 100V 0.014Ω 60V RF1S9630SM Note 200V, 6.5A, 0.800Ω RF1S4N100SM 1000V, 4.3A, 3.500Ω RF1S630SM 200V, 9A, 0.400Ω 0A TO 10A S E M I C O N D U C TO R 3.500Ω 0.800Ω 0.500Ω 0.400Ω 0.18Ω 0.300Ω 0.200Ω 0.160Ω 0.080Ω 0.077Ω

Contextual Info: MA6006S10000000 N-Ch 60V Fast Switching MOSFETs General Description Product Summery The MA6006S is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter

IRFZ24N

Contextual Info: PD - 95594 IRFIZ24EPbF Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = 60V RDS on = 0.071Ω G Fifth Generation HEXFETs from International Rectifier

IRFZ24N

Abstract: IRFz24n equivalent
Contextual Info: PD - 95594 IRFIZ24EPbF Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = 60V RDS on = 0.071Ω G Fifth Generation HEXFETs from International Rectifier

f20f6n

Abstract: 2SK2287
Contextual Info: 60VvU-X M9-M0SFET 60V SERIES POWER MOSFET ! > / \> 7 .* > h fi • O U T L IN E D IM E N S IO N S Case : FTO-220 2SK2287 F20F6N 60v 20 a D a te code Yt KÎA.J No. 1 . - Cìate : 2 1! D rain '3 1I S o u r c e ■ R A T IN G S B if ë Î 'il S ^ A È f ê

12v class d amplifier 70W

Abstract: HIP2060AS1 HIP4080A HIP2060 HIP2060AS2 MO-169 AN8610 1350P
Contextual Info: HIP2060 S E M I C O N D U C T O R 60V, 10A Half Bridge Power MOSFET Array May 1997 Features Packages JEDEC TS-001AA ALTERNATE VERSION HIP2060 AS1 • Two 10A Power MOS N-Channel Transistors • Output Voltage to 60V 54 • rDS(ON) . . . . . .0.135Ω Max Per Transistor at VGS = 15V

12v class d amplifier 70W

Abstract: HIP2060 HIP2060AS1 HIP2060AS2 HIP4080A MO-169 Transistor S1D
Contextual Info: HIP2060 S E M I C O N D U C T O R 60V, 10A Half Bridge Power MOSFET Array July 1996 Features Packages JEDEC TS-001AA ALTERNATE VERSION HIP2060 AS1 • Two 10A Power MOS N-Channel Transistors • Output Voltage to 60V 54 • rDS(ON) . . . . . .0.125Ω Max Per Transistor at VGS = 15V

12v class d amplifier 70W

Abstract: 25E03 HIP4080A 001-AA transistor AHs
Contextual Info: HIP2060 S E M I C O N D U C T O R 60V, 10A Half Bridge Power MOSFET Array April 1998 Features Description • Two 10A Power MOS N-Channel Transistors The HIP2060 is a power half-bridge MOSFET array that consists of two matched N-Channel enhancement-mode MOS

IRLSZ14A

Abstract: diode 60V 8A
Contextual Info: IRLSZ14A Advanced Power MOSFET FEATURES B V dss - Logic Level Gate Drive Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 HA Max. @ VDS= 60V 60 V