60V 3A DIODE Search Results

Contextual Info: XBS306S17 ETR1616-002 Schottky Barrier Diode, 3A, 60V Type •FEATURES ■APPLICATIONS Forward Voltage : VF=0.59V TYP. ●Rectification Forward Current : IF(AV)=3A ●Protection against reverse connection of battery Repetitive Peak Reverse Voltage : VRM=60V

XBS306S17

Contextual Info: XBS306S17 ETR1616-002 Schottky Barrier Diode, 3A, 60V Type •FEATURES ■APPLICATIONS Forward Voltage : VF=0.59V TYP. ●Rectification Forward Current : IF(AV)=3A ●Protection against reverse connection of battery Repetitive Peak Reverse Voltage : VRM=60V

XBS306S17

Abstract: 306S17 XBS30
Contextual Info: XBS306S17R-G ETR1616-002a Schottky Barrier Diode, 3A, 60V Type •FEATURES ■APPLICATIONS Forward Voltage : VF=0.59V TYP. ●Rectification Forward Current : IF(AVE)=3A ●Protection against reverse connection of battery Repetitive Peak Reverse Voltage : VRM=60V

Contextual Info: XBS306S17R-G ETR1616-002a Schottky Barrier Diode, 3A, 60V Type FEATURES APPLICATIONS Forward Voltage : VF=0.59V TYP. Rectification Forward Current : IF(AVE)=3A Protection against reverse connection of battery Repetitive Peak Reverse Voltage : VRM=60V ABSOLUTE MAXIMUM RATINGS

Contextual Info: RSR030N06 Nch 60V 3A Power MOSFET Datasheet lOutline VDSS 60V RDS on (Max.) 85mW ID 3A PD 1W lFeatures TSMT3 (3) (1) (2) lInner circuit 1) Low on - resistance. (1) Gate (2) Source (3) Drain 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT3).

Contextual Info: RSR030N06 Nch 60V 3A Power MOSFET Datasheet lOutline VDSS 60V RDS on (Max.) 85mW ID 3A PD 1W lFeatures TSMT3 (3) (1) (2) lInner circuit 1) Low on - resistance. (1) Gate (2) Source (3) Drain 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT3).

Contextual Info: RSR030N06 Datasheet Nch 60V 3A Power MOSFET lOutline VDSS 60V RDS on (Max.) 85mW ID 3A PD 1W lFeatures TSMT3 (3) (1) (2) lInner circuit 1) Low on - resistance. (1) Gate (2) Source (3) Drain 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT3).

SD833-06

Abstract: SD833 60V 3A diode mark BC TL121
Contextual Info: SD833-06 3A (60V / 3A ) Schottky barrier diode 0.8 Outline drawings, mm Characteristics SD833-06 Units Condition 3 A 4.0 BC Tj=125°C, typ 0.8 V V 0.2 1.2 IO 60 0.5 max. VRRM VF 5.0 Major characteristics 1.5 2.5 Features Low VF High voltage 60V Low height : 1.2mm max.

n-channel so8 60v

Abstract: STS4C3F60L s4c3f60l Back Light Inverter
Contextual Info: STS4C3F60L N-CHANNEL 60V - 0.045 Ω - 4A SO-8 P-CHANNEL 60V - 0.100 Ω - 3A SO-8 StripFET MOSFET Table 1: General Features Figure 1: Package TYPE VDSS RDS on ID STS4C3F60L (N-Channel) STS4C3F60L (P-Channel) 60 V 60 V < 0.055 Ω < 0.120 Ω 4A 3A •

capacitor 106 35K

Abstract: PH- 36 20-PIN SLMA002 TPS54362QPWPRQ1 soft start circuit 555 timer PH-17 DIODE 860PF2
Contextual Info: TPS54362-Q1 www.ti.com. SLVS845 – MARCH 2009 3A, 60V STEP DOWN DC/DC CONVERTER WITH LOW Iq

capacitor 106 35K

Abstract: Magnetic Field Sensor FLC 100 20-PIN SLMA002 TPS54362QPWPRQ1 ph-17 diode
Contextual Info: TPS54362-Q1 www.ti.com. SLVS845 – MARCH 2009 3A, 60V STEP DOWN DC/DC CONVERTER WITH LOW Iq

mosfet pch 3a 60v

Abstract: JESD97 STS4C3F60L
Contextual Info: STS4C3F60L N-channel 60V - 0.045 Ω - 4A SO-8 Complementary pair STripFET Power MOSFET General features Type VDSS RDS on ID STS4C3F60L(N-channel) 60V <0.056Ω 4A STS4C3F60L(P-channel) 60V <0.120Ω 3A • Standard outline for easy automated surface mount assembly

Contextual Info: STS4C3F60L N-channel 60V - 0.045 Ω - 4A SO-8 Complementary pair STripFET Power MOSFET General features Type VDSS RDS on ID STS4C3F60L(N-channel) 60V <0.056Ω 4A STS4C3F60L(P-channel) 60V <0.120Ω 3A • Standard outline for easy automated surface mount assembly

JESD97

Abstract: STS4C3F60L s4c3f60l mosfet pch 3a 60v
Contextual Info: STS4C3F60L N-channel 60V - 0.045 Ω - 4A SO-8 Complementary pair STripFET Power MOSFET General features Type VDSS RDS on ID STS4C3F60L(N-channel) 60V <0.056Ω 4A STS4C3F60L(P-channel) 60V <0.120Ω 3A • Standard outline for easy automated surface mount assembly

FZT751QTA

Contextual Info: A Product Line of Diodes Incorporated Green FZT751 60V PNP HIGH PERFORMANCE TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • • BVCEO > -60V IC = -3A high Continuous Current ICM = -6A Peak Pulse Current

Contextual Info: A Product Line of Diodes Incorporated Green FZT651 60V NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • BVCEO > 60V Maximum continuous current IC = 3A Low Saturation Voltage

LT3992FE

Abstract: LT3992EFE
Contextual Info: LT3992 Monolithic Dual Tracking 3A Step-Down Switching Regulator Description Features Wide Input Range: – Operation from 3V to 60V n Independent Supply, Shutdown, Soft-Start, UVLO, Programmable Current Limit and Programmable Power Good for Each 3A Regulator

LT3992FE

Abstract: Monolithic Dual Tracking 3A Step-Down Switching Regulator
Contextual Info: LT3992 Monolithic Dual Tracking 3A Step-Down Switching Regulator Description Features Wide Input Range: – Operation from 3V to 60V n Independent Supply, Shutdown, Soft-Start, UVLO, Programmable Current Limit and Programmable Power Good for Each 3A Regulator

c81 006

Abstract: erc81 ERC81-006
Contextual Info: ERC81-006 3A (60V / 3A ) Outline drawings, mm SCHOTTKY BARRIER DIODE ø 6.4 ø 1.2 7.5 30 MIN. 30 MIN. Marking Features Color code : Silver Low VF Abridged type name High reliability by planer design Voltage class Lot No. Applications C81 -006 02 •··

c81 006

Contextual Info: ERC81-006 3A (60V / 3A ) Outline drawings, mm SCHOTTKY BARRIER DIODE ø 6.4 ø 1.2 7.5 30 MIN. 30 MIN. Marking Features Color code : Silver Low VF Abridged type name High reliability by planer design Voltage class Lot No. Applications C81 -006 02 •··

MARKING KN2

Contextual Info: DXT651 60V NPN LOW VCE sat TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > 60V  Case: SOT89  IC = 3A high Continuous Current  Case material: Molded Plastic. “Green” Molding Compound.  Low saturation voltage VCE(sat) < 300mV @ 1A 

Contextual Info: 1/2 HIGH POWER SINGLE DIODES RECTIFIER & SCHOTTKY BARRIER DIODES • RECTIFIER DIODES AVAILABLE UP TO 1,000V AND 3A • SCHOTTKY BARRIER DIODES AVAILABLE UP TO 60V AND 3A • SURGE OVERLOAD RATING EITHER 30A, 50A OR 100A • RELIABLE LOW COST CONSTRUCTION WITH UL 94V-0 PLASTIC MATERIAL

Contextual Info: A Product Line of Diodes Incorporated Green FZT651 60V NPN HIGH PERFORMANCE TRANSISTOR IN SOT223 Features Mechanical Data •             BVCEO > 60V IC = 3A High Continuous Current ICM = 6A Peak Pulse Current Low Saturation Voltage VCE sat < 300mV @ 1A

SD833-09

Abstract: SD833
Contextual Info: SD833-09 3A (90V / 3A ) Schottky barrier diode 0.8 Outline drawings, mm Characteristics SD833-09 Units Condition 3 4.0 BD 0.8 Tj=125°C, typ A 0.2 1.2 IO V V max. 90 0.66 VRRM VF 5.0 Major characteristics 1.5 2.5 Features Low VF High voltage 60V Low height : 1.2mm max.