60V SMPS Search Results

irf1010 MOSFET

Abstract: IRF1010
Contextual Info: PD - 94826 IRFZ44VPbF Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Optimized for SMPS Applications Lead-Free Description HEXFET Power MOSFET D VDSS = 60V RDS on = 16.5mΩ

IRF1010

Abstract: IRFZ44VPBF diode marking 17
Contextual Info: PD - 94826 IRFZ44VPbF Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Optimized for SMPS Applications Lead-Free Description HEXFET Power MOSFET D VDSS = 60V RDS on = 16.5mΩ

Contextual Info: ßßDRIVENßBY E981.01 MULTIPHASE CONTROLLER ADVANCE PRODUCT INFORMATION - JUL 4, 2011 Features General Description ÿ Multiphase SMPS controller for Boost, SEPIC and Flyback Converters ÿ Wide input voltage range from 5V to 60V ÿ 20µA typical shutdown current

Contextual Info: SDB360 Semiconductor Schottky Barrier Diode Applications • Portable equipment battery applications • SMPS applications Features • • • • Low switching loss High reliability Low forward voltage: VF=0.65V Max. @ IF=3A Low reverse current: IR=0.35mA Max. @ VR=60V

SDB360

Contextual Info: SDB360 Semiconductor Schottky Barrier Diode Applications • Portable equipment battery applications • SMPS applications Features • • • • Low switching loss High reliability Low forward voltage: VF=0.65V Max. @ IF=3A Low reverse current: IR=500 ㎂ Max. @ VR=60V

IRF1010

Abstract: IRFZ44VPBF
Contextual Info: PD - 94826 IRFZ44VPbF Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Optimized for SMPS Applications Lead-Free Description HEXFET Power MOSFET D VDSS = 60V RDS on = 16.5mΩ

IRFZ48V

Contextual Info: PD-94834 IRFIZ48VPbF l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS ˆ Fast Switching Fully Avalanche Rated Optimized for SMPS Applications Lead-Free HEXFET Power MOSFET D VDSS = 60V

IRFZ48V

Contextual Info: PD-94834 IRFIZ48VPbF l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS ˆ Fast Switching Fully Avalanche Rated Optimized for SMPS Applications Lead-Free HEXFET Power MOSFET D VDSS = 60V

AN-994

Abstract: IRFZ34V IRFZ34VL IRFZ34VS 94180
Contextual Info: PD - 94180 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description IRFZ34VS IRFZ34VL l HEXFET Power MOSFET l D VDSS = 60V

AN-994

Abstract: IRFZ34V IRFZ34VL IRFZ34VS
Contextual Info: PD - 94180A Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description IRFZ34VS IRFZ34VL l HEXFET Power MOSFET l D VDSS = 60V

AN-994

Abstract: IRFZ34V IRFZ34VL IRFZ34VS
Contextual Info: PD - 94180 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description IRFZ34VS IRFZ34VL l HEXFET Power MOSFET l D VDSS = 60V

Contextual Info: PD - 96187 IRFS3006-7PPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S VDSS 60V RDS on typ. 1.5m: max. 2.1m:

Contextual Info: Preliminary SDB360 Semiconductor Schottky Barrier Diode Applications • Portable equipment battery applications • SMPS applications Features • • • • Low power rectified High reliability Low forward voltage: VF=0.65V max. @ IF=3A Low reverse current: IR=500 ㎂ max. @ VR=60V

TO-263CB

Abstract: AN-994 irfs3006 DT1410 1000T
Contextual Info: PD - 96187 IRFS3006-7PPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S VDSS 60V RDS on typ. 1.5m: max.

Contextual Info: PD - 95623 IRFZ24VPbF HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications l Lead-Free Description l D l VDSS = 60V

Contextual Info: PD - 93959A IRFZ48V HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Optimized for SMPS Applications D VDSS = 60V RDS on = 12mΩ

035H

Abstract: IRFPE30
Contextual Info: PD - 95500A IRFP054VPbF l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Optimized for SMPS Applications Lead-Free HEXFET Power MOSFET D VDSS = 60V

IRF1010

Contextual Info: PD - 95757A IRFB4215PbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Optimized for SMPS Applications Lead-Free D VDSS = 60V

cds 151a

Abstract: diode aa 90 IRF530S IRFZ48VS
Contextual Info: PD - 94051A IRFZ48VS HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Optimized for SMPS Applications D VDSS = 60V RDS on = 12mΩ

51a marking

Abstract: IRFZ44VS
Contextual Info: PD - 94050 IRFZ44VS l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Optimized for SMPS Applications HEXFET Power MOSFET D VDSS = 60V RDS on = 16.5mΩ

IRF530S

Abstract: IRFZ48VS surface mount diode 3F
Contextual Info: PD - 94051A IRFZ48VS HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Optimized for SMPS Applications D VDSS = 60V RDS on = 12mΩ

48V SMPS circuit

Abstract: IRFB4215
Contextual Info: PD - 95884 IRFB4215 HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Optimized for SMPS Applications D VDSS = 60V RDS on = 9.0mΩ

Contextual Info: PD - 94051 IRFZ48VS HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Optimized for SMPS Applications D VDSS = 60V RDS on = 12mΩ

IRFIZ48V

Abstract: IRFZ48V
Contextual Info: PD-94072 IRFIZ48V HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS ˆ l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description l D l VDSS = 60V RDS on = 12mΩ