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    60V TRANSISTOR NPN 2A Search Results

    60V TRANSISTOR NPN 2A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation
    TTC021
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    2SC5198
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=140 V / IC=10 A / hFE=55~160 / VCE(sat)=2.0 V / TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation

    60V TRANSISTOR NPN 2A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    ZXTN2010GTA

    Abstract: ZXTN2010G ZXTN2010GTC Bv 42 transistor
    Contextual Info: ZXTN2010G 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 60V : RSAT = 35m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


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    ZXTN2010G OT223 OT223 ZXTN2010GTA ZXTN2010G ZXTN2010GTC Bv 42 transistor PDF

    ZXTN

    Abstract: ZXTN2010GTA ZXTN2010G ZXTN2010GTC
    Contextual Info: ZXTN2010G 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 60V : RSAT = 35m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


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    ZXTN2010G OT223 OT223 INFORMAT26100 ZXTN ZXTN2010GTA ZXTN2010G ZXTN2010GTC PDF

    ZX5T851G

    Abstract: ZX5T851GTA ZX5T851GTC Bv 42 transistor
    Contextual Info: ZX5T851G 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 60V : RSAT = 35m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in


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    ZX5T851G OT223 OT223 ZX5T851G ZX5T851GTA ZX5T851GTC Bv 42 transistor PDF

    X5T851

    Abstract: bv 42 TRANSISTOR equivalent
    Contextual Info: ZX5T851G 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 60V : RSAT = 35m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in


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    ZX5T851G OT223 OT223 522-ZX5T851GTA ZX5T851GTA X5T851 bv 42 TRANSISTOR equivalent PDF

    transistor marking 6A

    Abstract: ZXTN2010Z ZXTN2010ZTA
    Contextual Info: ZXTN2010Z 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 60V : RSAT = 30m ; IC = 5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various


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    ZXTN2010Z transistor marking 6A ZXTN2010Z ZXTN2010ZTA PDF

    ZXTN2010A

    Abstract: ZXTN2010ASTOA ZXTN2010ASTZ
    Contextual Info: ZXTN2010A 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE SUMMARY BVCEO = 60V : RSAT = 34m ; IC = 4.5A DESCRIPTION Packaged in the E-line outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


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    ZXTN2010A ZXTN2010ASTOA ZXTN2010ASTZ ZXTN2010A ZXTN2010ASTOA ZXTN2010ASTZ PDF

    IC2A

    Abstract: marking N20 ZXTN2010A ZXTN2010ASTOA ZXTN2010ASTZ
    Contextual Info: ZXTN2010A 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE SUMMARY BVCEO = 60V : RSAT = 34m ; IC = 4.5A DESCRIPTION Packaged in the E-line outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


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    ZXTN2010A ZXTN2010ASTOA ZXTN2010ASTZ IC2A marking N20 ZXTN2010A ZXTN2010ASTOA ZXTN2010ASTZ PDF

    npn 120v 10a transistor

    Abstract: ZX5T851Z ZX5T851ZTA
    Contextual Info: ZX5T851Z 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 60V : RSAT = 30m ; IC = 5A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC


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    ZX5T851Z npn 120v 10a transistor ZX5T851Z ZX5T851ZTA PDF

    Contextual Info: ZXTN2010A 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE SUMMARY BVCEO = 60V : RSAT = 34m ; IC = 4.5A DESCRIPTION Packaged in the E-line outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


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    ZXTN2010A ZXTN2010ASTOA ZXTN2010AST) PDF

    ZXTN2010ZTA

    Abstract: ZXTN2010Z 0019E
    Contextual Info: ZXTN2010Z 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 60V : RSAT = 30m ; IC = 5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various


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    ZXTN2010Z ZXTN2010ZTA ZXTN2010Z 0019E PDF

    X5T851

    Abstract: ZX5T851A ZX5T851ASTOA ZX5T851ASTZ
    Contextual Info: ZX5T851A 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE SUMMARY BVCEO = 60V : RSAT = 34m ; IC = 4.5A DESCRIPTION Packaged in the E-line outline this new 5th generation low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC


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    ZX5T851A ZX5T851ASTOA ZX5T851ASTZ X5T851 ZX5T851A ZX5T851ASTOA ZX5T851ASTZ PDF

    ZXTN25060BZTA

    Abstract: TS16949 ZXTN25060BZ SOT89 transistor marking 5A marking 1c7
    Contextual Info: ZXTN25060BZ 60V, SOT89, NPN medium power transistor Summary BVCEX > 150V BVCEO > 60V BVECO > 6V IC cont = 5A VCE(sat) < 70mV @ 1A RCE(sat) = 48m⍀ PD = 2.4W Description C Packaged in the SOT89 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in


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    ZXTN25060BZ D-81541 ZXTN25060BZTA TS16949 ZXTN25060BZ SOT89 transistor marking 5A marking 1c7 PDF

    Contextual Info: ZX5T851A 60V NPN LOW SATURATION M EDIUM POWER TRANSISTOR IN E-LINE SUM M ARY BV CEO = 60V : RSAT = 34m ; IC = 4.5A DESCRIPTION Packaged in the E-line outline this new 5th generation low saturation 60V NPN transistor offers extrem ely low on state losses m aking it ideal for use in DC-DC


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    ZX5T851A PDF

    ZXTP19060CFF

    Abstract: ZXTN19060CFF ZXTN19060CFFTA
    Contextual Info: ZXTN19060CFF 60V, SOT23F, NPN high gain power transistor Summary BVCEX > 160V BVCEO > 60V BVECO > 6V IC cont = 5.5A VCE(sat) < 45mV @ 1A RCE(sat) = 26m⍀ PD = 1.5W Complementary part number ZXTP19060CFF Description C This mid voltage NPN transistor has been designed for applications


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    ZXTN19060CFF OT23F, ZXTP19060CFF OT23F ZXTP19060CFF ZXTN19060CFF ZXTN19060CFFTA PDF

    Contextual Info: ZXTN19060CFF 60V, SOT23F, NPN high gain power transistor Summary BVCEX > 160V BVCEO > 60V BVECO > 6V IC cont = 5.5A VCE(sat) < 45mV @ 1A RCE(sat) = 26m⍀ PD = 1.5W Complementary part number ZXTP19060CFF Description C This mid voltage NPN transistor has been designed for applications


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    ZXTN19060CFF OT23F, ZXTP19060CFF OT23F PDF

    TS16949

    Abstract: ZXTN19060CG ZXTN19060CGTA ZXTP19060CG
    Contextual Info: ZXTN19060CG 60V NPN low sat medium power transistor in SOT223 Summary BVCEO > 60V BVCEX > 160V BVECO > 6V IC cont = 7A VCE(sat) < 50mV @ 1A RCE(sat) = 30mΩ PD = 3.0W Complementary part number ZXTP19060CG Description C Packaged in the SOT223 outline this new low saturation NPN transistor


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    ZXTN19060CG OT223 ZXTP19060CG OT223 D-81541 TS16949 ZXTN19060CG ZXTN19060CGTA ZXTP19060CG PDF

    Contextual Info: ZXTN19060CG 60V NPN low sat medium power transistor in SOT223 Summary BVCEO > 60V BVCEX > 160V BVECO > 6V IC cont = 7A VCE(sat) < 50mV @ 1A RCE(sat) = 30mΩ PD = 3.0W Complementary part number ZXTP19060CG Description C Packaged in the SOT223 outline this new low saturation NPN transistor


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    ZXTN19060CG OT223 ZXTP19060CG OT223 D-81541 PDF

    Contextual Info: 2SA2094 Datasheet PNP -2A -60V Middle Power Transistor lOutline Parameter Value VCEO IC -60V -2A TSMT3 Collector Base Emitter lFeatures 1 Suitable for Middle Power Driver 2) Complementary NPN Types : 2SC5866 3) Low VCE sat) VCE(sat)= -0.50V(Max.) (IC/IB= -1A / -0.1A)


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    2SA2094 2SC5866 SC-96) R1102A PDF

    Contextual Info: 2SC5866 Datasheet NPN 2A 60V Middle Power Transistor lOutline Parameter Value VCEO IC 60V 2A TSMT3 Collector Base Emitter 2SC5866 SC-96 lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SA2094 3) Low VCE(sat) VCE(sat)=0.50V(Max.)


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    2SC5866 SC-96) 2SA2094 R1102A PDF

    Contextual Info: DSS4160DS 60V DUAL NPN LOW SATURATION TRANSISTOR IN SOT26 Features Mechanical Data • BVCEO > 60V   IC = 1A high Continuous Collector Current  Case Material: Molded Plastic, “Green” Molding Compound  ICM = 2A Peak Pulse Current  UL Flammability Classification Rating 94V-0


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    DSS4160DS J-STD-020 250mV MIL-STD-202, DS36556 PDF

    Contextual Info: A Product Line of Diodes Incorporated FMMT491 60V NPN MEDIUM POWER TRANSISTOR IN SOT23 Feature Mechanical Data • BVCEO > 60V • • IC = 1A Continuous Collector Current • • ICM = 2A Peak Pulse Current Case: SOT23 Case Material: molded plastic, “Green” molding compound


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    FMMT491 500mW FMMT591 AEC-Q101 DS33091 PDF

    Contextual Info: A Product Line of Diodes Incorporated FCX491 60V NPN MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > 60V   IC = 1A Continuous Collector Current   ICM = 2A Peak Pulse Current Case: SOT89 Case Material: Molded Plastic. “Green” Molding Compound.


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    FCX491 FCX591 AEC-Q101 DS33054 PDF

    Contextual Info: FMMT491 Medium power NPN transistor in SOT23 Summary BVCEO > 60V BVEBO > 7V IC cont = 1A PD = 500mW RCE(sat) = 160m⍀ at 1A Complementary part number : FMMT591 Description C Medium power planar NPN bipolar transistor. Features • VCE(sat) maximum specification improvement


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    FMMT491 500mW FMMT591 FMMT491TA D-81541 PDF

    NTE237

    Contextual Info: NTE237 Silicon NPN Transistor RF Power Output PO = 3.5W, 27MHz Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V


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    NTE237 27MHz) 500mA 500mA, 100mA -200mA 50MHz, NTE237 PDF