612492 Search Results

Contextual Info: UR2KB60 thru UR2KB100 Taiwan Semiconductor CREAT BY ART Glass Passivated Bridge Rectifiers FEATURES - Ideal for printed circuit board - High case dielectric strength - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and

ES1JL

Abstract: ru 94v-0
Contextual Info: ES1AL thru ES1JL Taiwan Semiconductor CREAT BY ART Surface Mount Super Fast Rectifiers FEATURES - Glass passivated junction chip - Ideal for automated placement - Low profile package - Low power loss, high efficiency - Moisture sensitivity level: level 1, per J-STD-020

MOSFET SOT-23 marking code M2

Contextual Info: Si2312BDS Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.031 at VGS = 4.5 V 5.0 0.037 at VGS = 2.5 V 4.6 0.047 at VGS = 1.8 V 4.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: SRAF520 thru SRAF5150 Taiwan Semiconductor CREAT BY ART Isolated Schottky Barrier Rectifiers FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and

Contextual Info: P4KE SERIES Taiwan Semiconductor CREAT BY ART Transient Voltage Suppressor FEATURES - Excellent clamping capability - Low dynamic impedance - 400W surge capability at 10 / 1000 s waveform - Fast response time: Typically less than 1.0ps from 0 volt to VBR for unidirectional

Contextual Info: RS1JLS thru RS1MLS Taiwan Semiconductor CREAT BY ART Surface Mount Fast Recovery Rectifiers FEATURES - Ideal for automated placement - Compact package size - High surge current capability - Low power loss, high efficiency - Moisture sensitivity level: level 1, per J-STD-020

Contextual Info: KBP201G thru KBP207G Taiwan Semiconductor CREAT BY ART Glass Passivated Bridge Rectifiers FEATURES - Ideal for printed circuit board - Reliable low cost construction utilizing molded plastic technique - High surge current capability - UL Recognized File # E-326243

Contextual Info: SR202 thru SR220 Taiwan Semiconductor CREAT BY ART Schottky Barrier Rectifier FEATURES - Low forward voltage drop - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and

Vishay DaTE CODE tsop-6

Abstract: si3410
Contextual Info: Si3410DV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)a 0.0195 at VGS = 10 V 8 0.023 at VGS = 4.5 V 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC

Contextual Info: New Product Si7613DN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e,f 0.0087 at VGS = - 10 V - 35 0.014 at VGS = - 4.5V - 35 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: New Product B350A, B360A Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Low forward voltage drop, low power losses • High efficifieency • High surge capability

IRFZ48 mosfet driver

Contextual Info: IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Dynamic dV/dt • 175 °C Operating Temperature • Fast Switching

5302D

Contextual Info: DG428, DG429 Vishay Siliconix Single 8-Ch/Differential 4-Ch Latchable Analog Multiplexers DESCRIPTION FEATURES The DG428, DG429 analog multiplexers have on-chip address and control latches to simplify design in microprocessor based applications. Break-before-make

SI4431CDY

Contextual Info: New Product Si4431CDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.032 at VGS = - 10 V - 9.0 0.049 at VGS = - 4.5 V - 5.8 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: Si7456DP Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 9.3 0.028 at VGS = 6.0 V 8.8 PowerPAK SO-8 APPLICATIONS S 6.15 mm • Primary Side Switch for High Density DC/DC • Telecom/Server 48 V, Full-/Half-Bridge DC/DC

Contextual Info: Si7846DP Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 150 0.050 at VGS = 10 V 6.7 PowerPAK SO-8 APPLICATIONS S 6.15 mm • Primary Side Switch for High Density DC/DC • Telecom/Server 48 V DC/DC • Industrial and 42 V Automotive

si1922

Abstract: SI1922EDH
Contextual Info: Si1922EDH Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.198 at VGS = 4.5 V 1.3a 0.225 at VGS = 2.5 V 1.3a 0.263 at VGS = 1.8 V 1.3a VDS (V) 20 Qg (Typ.) 0.9 nC • Halogen-free According to IEC 61249-2-21

Contextual Info: VS-10ETF0.FPPbF Series, VS-10ETF0.FP-M3 Series www.vishay.com Vishay Semiconductors Fast Soft Recovery Rectifier Diode, 10 A FEATURES Base cathode • 150 °C max. operation junction temperature • Designed and JEDEC-JESD47 2 qualified according to • Fully isolated package VINS = 2500 VRMS

95xxx

Abstract: si3434 si3495
Contextual Info: Si3495DV Vishay Siliconix P-Channel 20-V D-S , 1.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.024 at VGS = - 4.5 V -7 0.030 at VGS = - 2.5 V - 6.2 0.038 at VGS = - 1.8 V - 5.2 0.048 at VGS = - 1.5 V - 5.0 • Halogen-free According to IEC 61249-2-21

VSB3200

Abstract: vsb320
Contextual Info: New Product VSB3200 Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses TMBS • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106

Contextual Info: Si4804BDY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.022 at VGS = 10 V 7.5 0.030 at VGS = 4.5 V 6.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized

TO-252AA Mechanical dimensions

Abstract: VS-50WQ04
Contextual Info: VS-50WQ04FN-M3 Vishay Semiconductors Schottky Rectifier, 5.5 A FEATURES Base cathode 4, 2 1 Anode D-PAK TO-252AA • Low forward voltage drop • Guard ring for enhanced ruggedness and long term reliability • Halogen-free according to IEC 61249-2-21 definition

Contextual Info: Si1034X Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (mA) 5 at VGS = 4.5 V 200 7 at VGS = 2.5 V 175 9 at VGS = 1.8 V 150 10 at VGS = 1.5 V 50 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET: 1.5 V Rated

TFPT1206L1002

Abstract: thermistor ptc smd 0805
Contextual Info: TFPT Vishay SMD PTC - Nickel Thin Film Linear Thermistors FEATURES • Alumina substrate base with nickel based PTC thin film element  0603, 0805 and 1206 sizes available  Available in tape and reel packaging  Standard R25 tolerances: ± 0.5 %, ± 1 %, ± 5 %