618 FET Search Results

KAQW210S

Abstract: 618 FET
Contextual Info: Hemar AG, Fendler 50, CH-5524 Nesselnbach, Tel: +41 0 56 618 31 41, Fax +41 (0)56 618 31 42 http://www.hemar.ch High Voltage, Photo DEMos Relay KAQW210S UL 1577/ UL 508 (File No.E108430), FI EN60950 (File No.FI13698) Features KAQW210S 1. Normally Open, Single Pole Single Throw

Contextual Info: TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Stellaris LM3S618 Microcontroller D ATA SH E E T D S -LM 3S 618- 7 7 8 7 C opyri ght 2007-2010 Texas Instruments Incorporated Copyright Copyright © 2007-2010 Texas Instruments Incorporated All rights reserved. Stellaris and StellarisWare are registered trademarks of Texas Instruments

BC618

Abstract: bc617
Contextual Info: MOTOROLA SC XSTRS/R 1EE 0 | F b3fc.72S4 □□Ö5ä7t> 5 | BC617 BC618 M A X IM U M R A TIN G S R a tin g Sym bol BC 617 BC 618 U nit Collector-Emitter Voltage VcEO Collector-Base Voltage VcBO 40 55 Vdc 50 80 Em itter-Base Voltage Vebo C ASE 29 04, STYLE 17

Contextual Info: TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Stellaris LM3S618 Microcontroller D ATA SH E E T D S -LM 3S 618- 7 3 9 3 C opyri ght 2007-2010 Texas Instruments Incorporated Copyright Copyright © 2007-2010 Texas Instruments Incorporated All rights reserved. Stellaris and StellarisWare are registered trademarks of Texas Instruments

Contextual Info: TE X AS INS TRUM E NTS - P RO DUCTI O N D ATA Stellaris LM3S618 Microcontroller D ATA SH E E T D S -LM 3S 618- 9 1 0 2 C opyri ght 2007-2011 Texas Instruments Incor porated Copyright Copyright © 2007-2011 Texas Instruments Incorporated All rights reserved. Stellaris and StellarisWare are registered trademarks of Texas Instruments

Contextual Info: TE X A S I NS TRUM E NTS - P RO DUCTION D ATA Stellaris LM3S618 Microcontroller D ATA SHE E T D S -LM 3S 618- 7 0 0 4 C opyri ght 2007-2010 Texas Instruments Incorporated Copyright Copyright © 2007-2010 Texas Instruments Incorporated All rights reserved. Stellaris and StellarisWare are registered trademarks of Texas Instruments

0X00

Abstract: 16C550 LM3S618
Contextual Info: P RE LIMIN ARY LM3S618 Microcontroller D ATA SHE E T D S -LM3S 618- 2 9 7 2 C o p yri g h t 2 0 0 7 -2 0 0 8 L u mi n ary Mi cro, Inc. Legal Disclaimers and Trademark Information INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH LUMINARY MICRO PRODUCTS. NO LICENSE, EXPRESS OR

0X00

Abstract: 16C550 LM3S618
Contextual Info: TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Stellaris LM3S618 Microcontroller D ATA SHE E T D S -LM3S 618- 6 4 3 8 C o p yri g h t 2 0 0 7 -2 0 0 9 Te xa s In str uments In co rporated Copyright Copyright © 2007-2009 Texas Instruments Incorporated All rights reserved. Stellaris and StellarisWare are registered trademarks of Texas Instruments

Contextual Info: NRND: Not recommended for new designs. TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Stellaris LM3S618 Microcontroller D ATA SHE E T D S -LM3S 618- 1 2 7 3 9 . 2 5 1 5 S P M S 123H C o p yri g h t 2 0 07-2012 Te xa s In stru me n ts In co rporated NRND: Not recommended for new designs.

Contextual Info: NRND: Not recommended for new designs. TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Stellaris LM3S618 Microcontroller D ATA SHE E T D S -LM3S 618- 1 2 7 3 9 . 2 5 1 5 S P M S 123H C o p yri g h t 2 0 07-2012 Te xa s In stru me n ts In co rporated NRND: Not recommended for new designs.

Contextual Info: TE X AS INS TRUM E NTS - P RO DUCTI O N D ATA Stellaris LM3S618 Microcontroller D ATA SH E E T D S -LM3S 618- 111 0 7 C o p yri g h t 2 0 07-2011 Te xa s In stru me n ts In co r porated Copyright Copyright © 2007-2011 Texas Instruments Incorporated All rights reserved. Stellaris® and StellarisWare® are registered trademarks of Texas Instruments

shipping tray qfn

Contextual Info: TE X AS INS TRUM E NTS - P RO DUCTI O N D ATA Stellaris LM3S618 Microcontroller D ATA SH E E T D S -LM3S 618- 111 0 7 C o p yri g h t 2 0 07-2011 Te xa s In stru me n ts In co r porated Copyright Copyright © 2007-2011 Texas Instruments Incorporated All rights reserved. Stellaris® and StellarisWare® are registered trademarks of Texas Instruments

Contextual Info: T E X A S I N S T R U M E N T S - P R O D U C T I ON D ATA Stellaris LM3S618 Microcontroller DATA SH E E T DS - LM 3S 618-1 2 7 3 9 .2 5 1 5 S P M S 123H C opyri ght 2007- 2012 Texas Instruments Incorpor at ed Copyright Copyright © 2007-2012 Texas Instruments Incorporated All rights reserved. Stellaris and StellarisWare® are registered trademarks of Texas Instruments

Contextual Info: TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Stellaris LM3S618 Microcontroller D ATA SHE E T D S -LM3S 618- 1 2 7 3 9 . 2 5 1 5 S P M S 123H C o p yri g h t 2 0 07-2012 Te xa s In stru me n ts In co rporated Copyright Copyright © 2007-2012 Texas Instruments Incorporated All rights reserved. Stellaris and StellarisWare® are registered trademarks of Texas Instruments

IC OZ 9926

Abstract: OZ 9926 APT-6065 APT-18659 avantek apt-18646 APT-12066 APT-8076 APT-10566 Avantek 6-18 APT-8066
Contextual Info: APT Series: Thin-Film Wideband Power Amplifiers Features A P T S e rie s - 2 to 18 GHz W id e b a n d T h in -F ilm P o w e r A m p lifie rs • GaAs FET and MIC Reliability For Military Applications • Compact Designs Replace Bulky TWTs • 2 Watts Of Power To 8 GHz

618 FET

Contextual Info: MwT-5 26 GHz High Gain, Dual Gate GaAs FET DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM All Dimensions in Microns CHIP THICKNESS = 125 45 FEATURES 45 50 • 10.5 dB GAIN IN A 6-18 GHz BALANCED CIRCUIT • +14 dBm P1dB IN A 6-18 GHz BALANCED CIRCUIT • 0.3 MICRON REFRACTORY METAL/GOLD GATE

Contextual Info: MwT-5 26 GHz High Gain Dual GateGaAs FET M ic r o w a v e T e c h n o l o g y ► |4 5 p • • • • • • ► j w p * j Untts in jim 45 10.5 dB GAIN IN 6-18 GHz BALANCED CIRCUIT +14 dBm P1dB IN 6-18 GHz BALANCED CIRCUIT 0.3 MICRON REFRACTORY METALJGOLD GATE

Contextual Info: MwT-5 26 GHz High Gain Dual GateGaAs FET M ic r o w a v e T e c h n o l o g y ►|45p ►j w p Units in |im 10.5 dB GAIN IN 6-18 GHz BALANCED CIRCUIT +14 dBm P1dB IN 6-18 GHz BALANCED CIRCUIT 0.3 MICRON REFRACTORY METAUGOLD GATE DIAMOND-LIKE CARBON DLC PASSIVATION

sg 3425

Contextual Info: MwT-5 26 GHz High Gain Dual GateGaAs FET M ic r o w a v e T e c h n o l o g y ► |4 5 p • • • • • • ► j w p * j Untts in jim 45 10.5 dB GAIN IN 6-18 GHz BALANCED CIRCUIT +14 dBm P1dB IN 6-18 GHz BALANCED CIRCUIT 0.3 MICRON REFRACTORY METALJGOLD GATE

jx 903

Contextual Info: MwT-5 26 GHz High Gain Dual GateGaAs FET M ic r o w a v e T e c h n o l o g y ►j45p ►J S Op Unit» In im ►jwp • 10.5 dB GAIN IN 6-18 GHz BALANCED CIRCUIT • +14 dBm P1dB IN 6-18 GHz BALANCED CIRCUIT • 0.3 MICRON REFRACTORY METAIVGOLD GATE • DIAMOND-UKE CARBON (DLC PASSIVATION

Contextual Info: E' M Wha% H EWLETT K PACKARD Avantek Products Surface Mount Cascadable Amplifier 6 to 18 GHz Technical Data PPA-18632 Features Description Pin Configuration • Frequency Range: 6 to 18 GHz The PPA-18632 is two-stage GaAs FET RF amplifier in a 0.25 in. square package. Internal blocking

Sm 8927

Contextual Info: Whal HEWLETT mLftm PACKARD Avantek Products Surface M ount Cascadable Am plifier 6 to 18 GHz Technical Data PPA-18632 Features Description Pin Configuration • Frequency Range: 6 to 18 GHz The PPA-18632 is t w o-stage GaAs FET RF am plifier in a 0.25 in.

Contextual Info: -r-3 h Z 5 MwT-4 GN/SN/LN 26 GHz LOW NOISE GaAs FET DEVICE MICROWAVE T e c h n o l o g y niCROQIAVE 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 TECHNOLOGY 4ÛE D • LIE M ID D T5Q ■ 3 — • • • • • • • • « 84 |— —!5 o |- 3 5 6 -CHIP THICKNESS = 185 MICRONS

SG 3425

Contextual Info: M w T -5 G G / S G / H G 20 GHz High Gain Dual Gate GaAs FET DEVICE MICROWAVE TECHNOLOGY 4268 Solar Way Fremont, CA 94538 415-651-6700 FAX 415-651-2208 FEATURES - ^ 4 4 j -| 5 u f - -144|- p !z n i_ q • 10.5 dB GAIN IN 6-18 GHz BALANCED CIRCUrT