619 SOT 23 Search Results

BB409

Abstract: BB505B BB801 BB304 BB505 BB204 BB610 BB314 BB505G bb609b
Contextual Info: flñ D E Í f lH 3b 32 0 0 0 1 4 2 5 4 □ | 8236320 SIEMENS/ S P C L , SEMICONDS 88D 14254 D f " 07" Diodes Silicon tuning diodes Glass package DO 35 Characteristics TA = 25°C Type Applications Figure rs C ti/ C t2 V r \/Vr2 PF Vr V BB 409 4 .5 . 5.6

SOT23 marking 619

Abstract: SN74AHCT MARKING 313 sc70 359 SOT23 Buffer gate 6 pin sot23 SOT23 MARKING SB AHC* marking marking 619 sot23 abstract Buffer gate sot23
Contextual Info: LL Non-Inverting Buffer and Driver - LL Buffer Gate with 3-State Output - SN74AHCT. TI Home > Semiconductors > Logic > Little Logic > LL Buffer, Driver and Transceiver > LL Non-Inverting Buffer and Driver > LL Buffer Gate with 3-State Output > SN74AHCT1G125 Status:

MARKING CODE 618 SOT23

Contextual Info: MMBT489LT1 High Current Surface Mount NPN Silicon Switching Transistor for Load Management in Portable Applications http://onsemi.com 30 VOLTS 2.0 AMPS NPN TRANSISTOR MAXIMUM RATINGS TA = 25°C Rating Symbol Max Unit Collector-Emitter Voltage VCEO 30 Vdc

EMC3DXV5T5

Contextual Info: EMC2DXV5T1, EMC3DXV5T1, EMC4DXV5T1, EMC5DXV5T1 Preferred Devices Dual Common Base-Collector Bias Resistor Transistors http://onsemi.com 3 R1 NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network MAXIMUM RATINGS TA = 25°C unless otherwise noted, common for Q1

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad General Purpose Transistors NPN Silicon 14 13 12 11 10 9 8 *Motorola Preferred Device NPN 1 2 3 MPQ2222 MPQ2222A* 4 5 6 7 14 1 MAXIMUM RATINGS Rating Symbol MPQ2222 MPQ2222A Unit Collector – Emitter Voltage VCEO

pm2222a

Abstract: SOD80C PHILIPS BCB47B 1N4148 SOD80C PMBTA64 PXTA14 BF960 FET BFW11 BF345C BC558B PHILIPS
Contextual Info: Philips Semiconductors Index Surface Mounted Semiconductors Alphanumeric index: types added to the range since the last issue of handbook SC10 1991 issue are shown in bold print. TYPE NUMBER PACKAGE NEAREST CONVENTIONAL TYPE(S) DEVICE TYPE PAGE COMPLEMENT

Contextual Info: 79-3293: Rev. 2; i / l/ l/ J X I / l/ l CMOS Monolithic Voltage Converter _ Genera! Description The MAX660 monolithic, charge-pump voltage inverter converts a +1.5V to +5.5V input to a corresponding -1.5V to -5.5V ou tput. Using only two low -cost

duracell dl123a

Abstract: max660 MAX660CPA DL123A ICL7660 MAX660CSA MAX660EPA MAX660ESA MAX660MJA
Contextual Info: 19-3293; Rev. 2; 9/96 CMOS Monolithic Voltage Converter _Applications Laptop Computers Medical Instruments Interface Power Supplies Hand-Held Instruments Operational-Amplifier Power Supplies _ Features ®

Contextual Info: 19-3293; Rev. 2; 9/96 CMOS Monolithic Voltage Converter The MAX660 monolithic, charge-pump voltage inverter converts a +1.5V to +5.5V input to a corresponding -1.5V to -5.5V output. Using only two low-cost capacitors, the charge pump’s 100mA output replaces

duracell dl123a

Abstract: MAx660 ICL7660 MAX660CPA MAX660CSA MAX660EPA MAX660ESA MAX660MJA
Contextual Info: 19-3293; Rev. 2; 9/96 CMOS Monolithic Voltage Converter The MAX660 monolithic, charge-pump voltage inverter converts a +1.5V to +5.5V input to a corresponding -1.5V to -5.5V output. Using only two low-cost capacitors, the charge pump’s 100mA output replaces

duracell dl123a

Abstract: DL123A MAx660 ICL7660 MAX660CPA MAX660CSA MAX660EPA MAX660ESA MAX660MJA Duracell-DL123A
Contextual Info: 19-3293; Rev. 2; 9/96 CMOS Monolithic Voltage Converter The MAX660 monolithic, charge-pump voltage inverter converts a +1.5V to +5.5V input to a corresponding -1.5V to -5.5V output. Using only two low-cost capacitors, the charge pump’s 100mA output replaces

smd fl014

Abstract: IRFL4105PBF diode SMD MARKING CODE 607 314P EIA-541 FL014 IRFL014 SMD MARKING 541 DIODE
Contextual Info: PD- 95319 IRFL4105PbF HEXFET Power MOSFET Surface Mount Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 55V RDS on = 0.045Ω G ID = 3.7A S Description Fifth Generation HEXFETs from International Rectifier

MARKING 93 SOT-223

Abstract: fl014 314P AN-994 EIA-541 IRFL014 sot-223 93 marking code 27a sot
Contextual Info: PD - 95387 IRLL014PbF HEXFET Power MOSFET l l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Logic-Level Gate Drive RDS on Specified at VGS=4V & 5V Fast Switching Ease of Paralleling Lead-Free D VDSS = 60V RDS(on) = 0.20Ω G ID = 2.7A

FL014

Abstract: IRFL214PBF IRF 100A 314P AN-994 EIA-541 IRFL014 PD-95318 International Rectifier TO-261AA
Contextual Info: PD-95318 IRFL214PbF HEXFET Power MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 250V RDS on = 2.0Ω G ID = 0.79A S Description

FL014

Abstract: AN-994 irfl110pbf IRFL014 314P EIA-541 519 SOT-223
Contextual Info: PD - 95317 IRFL110PbF HEXFET Power MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 100V RDS on = 0.54Ω G ID = 1.5A S Description

IRFL9014PBF

Abstract: FL014 IRF 100A AN-994 irf* p-channel sot-223 95153 TO-261AA DSS 1630
Contextual Info: PD - 95153 IRFL9014PbF HEXFET Power MOSFET l l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling Lead-Free D VDSS = -60V RDS on = 0.50Ω G Description ID = -1.8A

smd fl014

Abstract: FL014 FL014 Example transistor SMD FL014 EIA-541 IRFL014 IRFL4310 838 infra red i*l014 MARKING 93 SOT-223
Contextual Info: PD - 91368B IRFL4310 HEXFET Power MOSFET D l l l l l l Surface Mount Dynamic dv/dt Rating Fast Switching Ease of Paralleling Advanced Process Technology Ultra Low On-Resistance VDSS = 100V RDS on = 0.20W G ID = 1.6A S Description Fifth Generation HEXFETs from International Rectifier

Contextual Info: PD - 91368B IRFL4310 HEXFET Power MOSFET D l l l l l l Surface Mount Dynamic dv/dt Rating Fast Switching Ease of Paralleling Advanced Process Technology Ultra Low On-Resistance VDSS = 100V RDS on = 0.20W G ID = 1.6A S Description Fifth Generation HEXFETs from International Rectifier

VISHAY SOT 223 DATE CODE

Abstract: VISHAY SOT LOT CODE
Contextual Info: PD-95318 IRFL214PbF HEXFET Power MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 250V RDS on = 2.0Ω G ID = 0.79A S Description

FL014

Abstract: marking code vishay soic 314P AN-994 EIA-541 IRFL014 International Rectifier TO-261AA
Contextual Info: PD - 95317 IRFL110PbF HEXFET Power MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 100V RDS on = 0.54Ω G ID = 1.5A S Description

FL014

Abstract: IRFL9014PBF AN-994
Contextual Info: PD - 95153 IRFL9014PbF HEXFET Power MOSFET l l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling Lead-Free D VDSS = -60V RDS on = 0.50Ω G Description ID = -1.8A

91195

Abstract: AN-994 VISHAY SOT LOT CODE International Rectifier TO-261AA
Contextual Info: PD - 95153 IRFL9014PbF HEXFET Power MOSFET l l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling Lead-Free D VDSS = -60V RDS on = 0.50Ω G Description ID = -1.8A

Contextual Info: PD - 95387 IRLL014PbF HEXFET Power MOSFET l l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Logic-Level Gate Drive RDS on Specified at VGS=4V & 5V Fast Switching Ease of Paralleling Lead-Free D VDSS = 60V RDS(on) = 0.20Ω G ID = 2.7A

95320

Abstract: st 95320 FL014 91196 AN-994
Contextual Info: PD - 95320 IRFL9110PbF HEXFET Power MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling Lead-Free D VDSS = -100V RDS on = 1.2Ω G ID = -1.1A S Description Third Generation HEXFETs from International Rectifier