620 TG DIODE Search Results

620 tg diode

Abstract: 30V30
Contextual Info: Silicon Tuning Diode BB 620 • For Hyperband TV/VTR tuners. Bd I Type BB620 Ordering code Q 6 2 7 0 2 -B 4 0 3 Marking red/S M axim um ratings Vr h To, ^»tg S iem ens 30 20 -55.+125 -55.+150 V mA °C °C o o Reverse voltage Forward current Operating temperature range

620 tg diode

Contextual Info: Silicon Variable Capacitance Diode BB 620 • For Hyperband TV/VTR tuners, Bd I Type Marking B B red S 6 2 0 Ordering Code tape and reel Pin Configuration Package1) 3 2 o - « - o Q 6 2 7 0 2 -B 4 0 3 S O D - 1 2 3 EHM0001 Maximum Ratings

ETN81-055

Abstract: EVM31-050A 2DI75D-050A 2DI300A-050 ETF81-050 2DI75D-055A EVK31-050 2DI240A-055 EVL31-050 1DI240A-055
Contextual Info: S m • • • • BIPOLAR TRANSISTOR MODULES Ratings and Specifications 600 volts class pow er transistor modules P o w e r transistors and fre e w h e e l diodes are built into one package. All te rm in a ls are insulated fro m m o u n tin g plate. Suited fo r m o to r control ap p licatio n s w ith 220 to 240 volts inputs.

semikron skiip 792

Contextual Info: s e MIKRO n SKiiP 792 GB 170 - 370 WT/FT Absolute Maximum Ratings Sym bol Values Units 1700 1200 750 1500 - 5 5 . . . + 150 4000 620 1500 6480 210 V V A A °C V A A A kA2s 18 30 75 - 25 0 . . . + 85(70) V V kV/ns °C | C o n d itio n s 1> IGBT & Inve rse Diode

RUR620

Abstract: TA49037
Contextual Info: H A R R IS RURD610, RURD615, RURD620, s E M, c o N o u c T o R r u r d 6 1 OS, RURD615S, RURD620S 6A, 100V - 200V Ultrafast Diodes April 1995 Features Packaging • Ultrafast with Soft R ecovery. <30ns

MA760

Abstract: 1N4150 FDLL4150
Contextual Info: SEMICONDUCTOR tm 1N4150 / FDLL4150 C O LO R B A N D M AR KING D E V IC E FD LL4150 1S T B A N D 2N D BAND B LA C K ORANGE High Conductance Ultra Fast Diode Sourced from Process 1R. See M MBD1201-1205 for characteristics. Absolute Maximum Ratings* t a = 2 5 ° C u nless o th e rw ise noted

abb cs 400

Abstract: THYRISTOR 1200 5SGS08D2500
Contextual Info: 5SGS 08D3000 5SGS 08D3000 Old part no. TG 907-800-30 Gate Turn-off Thyristor Properties § Full reverse voltage § High reliability § Suitable for drives and traction applications Key Parameters V DRM, V RRM = 3 000 I TGQM = 800 I TAVm = 395 I TSM = 4 500

5SGS 08D2500

Abstract: 5SGS08D2500 abb cs 400 igcm abb 800 5SGS
Contextual Info: 5SGS 08D2500  5SGS 08D2500 Old part no. TG 907-800-25 Gate Turn-off Thyristor Properties • Full reverse voltage • High reliability  Suitable for drives and traction applications Key Parameters V DRM, V RRM = 2 500 I TGQM = 800 I TAVm = 395

Contextual Info: • TRANSISTOR MODULE 7 ^ 1 5 4 3 000S1A5 H13 QCA100A/QBB100A40/60 UL;E76102 M Q C A 1 0 0 A and Q B B 1 OOA is a dual Darlin­ gton power transistor module with two high speed, high power Darlington transis­ tors. Each transistor has a reverse paral­ leled fast recovery diode.

Contextual Info: IGBT with Diode IXSH 10N120AU1 SCSOA Capability Sym bol T e st C o n d itio n s v CES v CGR T = 25oCto150°C TJ = 25°C to 150°C; RGE= 1 MQ v v GEM Continuous T ransient ^C25 ^C90 *CM Tc = 25°C Tc = 90°C Tc = 25°C, 1 ms SSOA RBSOA VGE = 15 V, Tj= 125°C, Hg= 150 O

MLL4148

Abstract: LL4448 Philips LL4148 st
Contextual Info: Philips Semiconductors Product specification High-speed diodes PMLL4148; PMLL4448 FEATURES DESCRIPTION • Sm all herm etically sealed glass SM D package The P M LL4148 and PM LL4448 are high-speed sw itching diodes fabricated in planar technology, and encapsulated in sm all herm etically sealed glass

IN5359b

Abstract: in5353b IN5350B in5351b IN5355B 1N53638 IN5361B IN5345 1n53478 in5364B
Contextual Info: FAGOR "t ö ELECTRONICS 3459325 DDOoaa? □ |~ FAGOR E L E C T R O N IC S 98D 00237 1NS345 . 1N5364 FAGOR 9 T - H- ' S' 5 W Zener Diodes DO-27A Plastic Dimensions in mm. (inches) S § mis’ sU •H -H S ji t Voltage 8.7 to 33 V. I 1 (0.374) < 9.S ,

N5363B

Abstract: N5356 N5373B n5366 N5380 N5375B N5380B 1N53888 N5383 N534
Contextual Info: 1N5344B - 1 N5388B VISHAY 5W ZENER DIODES /l i t e w i i I POWER SEMICONDUCTOR I Features Voltage Range 8.2V - 200V Glass Passivated Junction 5W Steady State High Surge Capability ±5% Voltage Tolerance on Nominal Vz is Standard 100% Tested Î c Mechanical Data

RB095T-40

Contextual Info: RB095T-40 Diodes Schottky barrier diode RB095T-40 zExternal dimensions Unit : mm zApplications Switching power supply zStructure 4.5±0.3 0.1 2.8±0.2 0.1 8.0±0.2 12.0±0.2 5.0±0.2 ① 13.5MIN 1.2 zConstruction Silicon epitaxial planar

SC1405D

Abstract: 1N4148 1N5819 IR7811 SC1405 SC1405DITSTRT tssop14 0.65 land pattern high speed mosfet driver Class-D
Contextual Info: SC1405D High Speed Synchronous Power MOSFET Smart Driver POWER MANAGEMENT Description Features The SC1405D is a Dual-MOSFET Driver with an internal Overlap Protection Circuit to prevent shoot-through. Each driver is capable of driving a 3000pF load in 15ns rise/

RB160M-90

Contextual Info: RB160M-90 Diodes Schottky barrier diode RB160M-90 zApplications General rectification z Land size figure Unit : mm z External dimensions (Unit : mm) 0.15±0.03 1.6±0.1 3.05 2.6±0.1 ① zFeatures 1) Small power mold type. (PMDU) 2) Low IR 3) High reliability.

RB160M-90

Contextual Info: RB160M-90 Diodes Schottky barrier diode RB160M-90 zApplications General rectification z Land size figure Unit : mm zDimensions (Unit : mm) 0.1±0.1 0.05 1.2 0.85 1.6±0.1 2.6±0.1 ① 3.5±0.2 3.05 zFeatures 1) Small power mold type. (PMDU) 2) Low IR

Contextual Info: RB095T-40 Diodes Schottky barrier diode RB095T-40 zExternal dimensions Unit : mm zApplications Switching power supply zStructure 9.9 2.2 0.3 0.8 10.0 4.5±0.3 0.1 10.0±0.3 0.1 1.8±0.2 2.8±0.2 0.1 1.1 7.2 5.0±0.2 ① 8.0

RB160M-90

Contextual Info: RB160M-90 Diodes Schottky barrier diode RB160M-90 zApplications General rectification z Land size figure Unit : mm zDimensions (Unit : mm) 0.1±0.1 0.05 1.2 0.85 1.6±0.1 2.6±0.1 ① 3.5±0.2 3.05 zFeatures 1) Small power mold type. (PMDU) 2) Low IR

RB160M-90

Contextual Info: RB160M-90 Diodes Schottky barrier diode RB160M-90 zApplications General rectification z Land size figure Unit : mm z External dimensions (Unit : mm) 0.1±0.1 0.05 1.2 0.85 1.6±0.1 2.6±0.1 ① 3.5±0.2 3.05 zFeatures 1) Small power mold type. (PMDU)

Contextual Info: RB095T-40 Diodes Schottky barrier diode RB095T-40 zExternal dimensions Unit : mm zApplications Switching power supply zStructure 9.9 2.2 0.3 0.8 10.0 4.5±0.3 0.1 10.0±0.3 0.1 1.8±0.2 2.8±0.2 0.1 1.1 7.2 5.0±0.2 ① 8.0

IR7811

Abstract: SC1405D 1N4148 1N5819 SC1405 SC1405DITSTRT tssop14 0.65 land pattern FDS6674A
Contextual Info: SC1405D High Speed Synchronous Power MOSFET Smart Driver POWER MANAGEMENT Description Features The SC1405D is a Dual-MOSFET Driver with an internal Overlap Protection Circuit to prevent shoot-through. Each driver is capable of driving a 3000pF load in 15ns rise/

1RFI640G

Abstract: wc mica IRFI640G
Contextual Info: International |k 1Rectifier PD-9.649A IRFI640G HEXFET® Power MOSFET • • • • • Isolated Package High Voitage lsolatìon= 2.5KVRMS CD Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating Low Thermal Resistance ^ ds s - 2 0 0 V ^DS on = 0 .1 8 Í2

FLD150F1CJ

Abstract: thermoelectric fld150
Contextual Info: FLD 150F1CJ FEATURES • Bit rate capability to 620 Mb/s • Span to 100 Km • Narrow spectral width due to distributed feed-back DFB type structure • Hermetically sealed 14 pin dual-in-line package with monitor photodiode, thermoelectric cooler, thermistor