6232 DIODE Search Results

A6822

Abstract: GP 836 DIODE A705 equivalent
Contextual Info: H Avantek Products Surface Mount Cascadable Amplifier 2000 to 6000 MHz Technical Data PPA-6232 Features Description Pin Configuration • Frequency Range: 2000 to 6000 MHz The PPA-6232 is a two-stage, highgain RF amplifier using HP GaAs FET technology, and resistive

GP 836 DIODE

Abstract: S1 6822 GP 833 DIODE diode gp 946
Contextual Info: What HEWLETT ft"EM PACKARD Avantek Products Surface Mount Cascadable Amplifier 2000 to 6000 MHz Technical Data 1 PPA-6232 Features • Frequency Range: 2000 to 6000 MHz • High Dynamic Range • Noise Figure: 4.3 dB Typ • Surface Mount Package Applications

GP 836 DIODE

Contextual Info: Q P PA-6232 Surface Mount Cascadable Amplifier 2000 to 6000 MHz avantek FEATURES APPLICATIONS • Frequency Range: 2000 to 6000 MHz • High Dynamic Range • Noise Figure: 4.3 dB Typ • Surface Mount Package • Wideband Receiver Gain Block • IF Gain Block

diode gp 946

Contextual Info: W hpl H E W L E T T 1"UM P A C K A R D Avantek Products Surface Mount Cascadable Amplifier 2000 to 6000 MHz Technical Data PPA-6232 Features • Frequency Range: 2000 to 6000 MHz • High Dynamic Range • Noise Figure: 4.3 dB Typ • Surface Mount Package

6232 RAM pinout

Abstract: 6232 RAM M6231 bdl 39 jb 8y transistor 18-SEGMENT m6234 "7 Segment Displays" potentiometer Seven-Segment Numeric LCD Display 20 pin
Contextual Info: DEC 2 6 1930 M 6231/32/33/34 I IMS i m EM MICROELECTRONIC-MARIN SA i IB L J «4 , k • ■ ■ ■ ’ " ■ ini a i !■m m u w m ^ ' l l l il is mmwM ^■i ai !■ Smart Display Decoder / Driver for Triplexed LCDs 1. Summary The M 6231 / 32 / 33 / 34 family of integrated circuits generates the voltage levels and the switching waveforms required to drive tri­

9716 diode

Abstract: 4433 an 17823 8906 17823 A 6077 D1069N D1809N D269N D3301N
Contextual Info: M3.2 - Schaltung ~ Anschlußspannung ~ ~ ~ ~ ~ 1000 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 560 V 3600 V + Kühlblöcke für Wasserkühlung Wasser men. vL pro KB Temp. tA Satzstrom Id Verlustl. P d Schaltung Diode D [°C]

an 17823

Abstract: D849N D1069N D1809N D269N D3301N and/GI 9716 diode
Contextual Info: M3.2 - Schaltung ~ Anschlußspannung ~ ~ ~ ~ ~ 1000 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 560 V 3600 V + Kühlblöcke für Wasserkühlung Wasser men. vL pro KB Temp. tA Satzstrom Id Verlustl. P d Schaltung Diode D [°C]

Phycomp 2238

Abstract: CM316X7R224K50AT MMSD4148G 86H-6232 2222 863 15479 m1 smd transistor 2238 861 0805 SMD resistors derating 1N4148 equivalent SMD 2238 581 15649
Contextual Info: AND8263/D NCP1351 Evaluation Board, a 19 V − 3 A Adapter Prepared by: Nicolas Cyr, Christophe Basso ON Semiconductor http://onsemi.com APPLICATION NOTE The NCP1351 at a Glance Fixed ton, variable toff current−mode control: implementing a fixed peak current mode control hence the

Phycomp 2238

Abstract: 86H-6232 step down transformer 230 v to 15 v smd transistor 2T 2238 581 15649 2238 861 0.1 MF RADIAL CAPACITOR PQ26x25 MCF2W47K NCP1351
Contextual Info: AND8263/D NCP1351 Evaluation Board, a 19 V − 3 A Adapter Prepared by: Nicolas Cyr, Christophe Basso ON Semiconductor http://onsemi.com APPLICATION NOTE The NCP1351 at a Glance Fixed ton, variable toff current−mode control: implementing a fixed peak current mode control hence the

ZC832A

Abstract: FMMD914 ZC830A ZC831A ZC833A ZC834A ZC835A ZC836A ZC836B ferranti
Contextual Info: i FERRANTI semiconductors ZC830A Series Silicon Variable Capacitance Diodes DESCRIPTION These silicon ion-im planted hyperabrupt tuning diodes are intended fo r use in HF, VH F and UHF electronic tuning and frequency control applications w here large capaci­

727 thyristor

Abstract: M32 diode an 7591 thyristor 4592 D849N 8906 D1069N D1809N D269N D3301N
Contextual Info: M3.2 - Schaltung ~ Anschlußspannung ~ ~ ~ ~ ~ 1000 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 560 V 3600 V + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L Schaltung pro KB Diode D [°C]

an 7591

Abstract: M32 diode D1069N D1809N D269N D3301N D749N D849N
Contextual Info: M3.2 - Schaltung ~ Anschlußspannung ~ ~ ~ ~ ~ 1000 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 560 V 3600 V + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L Schaltung pro KB Diode D [°C]

Diode Marking z3 SOT-23

Abstract: dual diode marking A3 code J4 diode W6 13A Diode marking J6 transistors diode marking x6 sot-23 MARKING CODE j3 marking W6 diode BAV-99 j4 DIODE schottky sot 23
Contextual Info: FERRANTI i semiconductors ZC830A Series S ilic o n Variable C ap a citan ce D iodes DESCRIPTION These silicon ion-im planted hyperabrupt tuning diodes are intended fo r use in HF, VH F and UHF electronic tuning and frequency control applications w here large capaci­

RFP15N06L

Contextual Info: RFP15N05L, RFP15N06L Semiconductor April 1999 Data Sheet 15A, 50V and 60V, 0.140 Ohm, Logic Level N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers,

X328 transistor

Abstract: scx6206 transistor x328 SCX6218 SCX6225 MEA 2901 x328 SCX6244 scx6232 SM8250A
Contextual Info: WjWM National /¡/m Semiconductor mUm Corporation Description of Gate Arrays and Standard Cells National Semiconductor’s CMOS Gate Arrays and Standard Cells utilize a dual layer metal technology microCMOS to achieve operating speeds similar to Schottky-TTL integrat­

AN9321

Abstract: AN9322
Contextual Info: in te r r ii RFD3N08L, RFD3N08LSM D ata S h e e t 3A, 80V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs 2 8 3 6 .4 • 3A, 80V • rDS ON = 0.800Q • Temperature Compensating PSPICE Model • On Resistance vs Gate Drive Voltage Curves • Peak Current vs Pulse Width Curve

bts 2106

Abstract: bts 425 l1 80N04 BTS 5155 BTS 2146 Tekelec TA BTS 3012 BTS 240-A SIEMENS tle 420 CA 5210 PL
Contextual Info: T E M P F E T , H I T F E T ®, P R O F E T ®, T R I L I T H I C ®, O p t i M O S Ultimate POWER needs PERFECT Control Smart Power Switches and Bridges www.infineon.com Never stop thinking. Improve your System and Replace the Relays with Infineon SMART POWER SWITCHES and

IRFF221R

Abstract: IBFF220R IRFF220R IRFF222R IRFF223R 08c1 HI POWER 30A MOSFET
Contextual Info: Rugged Power MOSFETs File N u m b e r 2026 IRFF220R, IRFF221R, IRFF222R, IRFF223R Avalanche Energy Rated N-Channel Power MOSFETs 3.0A and 3.5A, 150V-200V rDs on = 0.8 0 and 1.20 N-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated

Contextual Info: OM6227SS OM6230SS OM6232SS OM6228SS OM6231SS OM6233SS DUAL HIGH CURRENT POWER MOSFETS IN HERMETIC ISOLATED SIP PACKAGE 400V, 500V, 1000V, Up To 24 Amp N-Channel, Dual Size 6 High Energy MOSFETs FEATURES • • • • • • • Dual Uncommitted MOSFETs

MC145048

Abstract: level shifter . CMOS to TTL
Contextual Info: MOTOROLA L SUFFIX CERAMIC CASE 620 HEX L E V E L SH IFTER FOR TTL to CMOS or CMOS to CMOS The M C145048 is a hex non inverting level shifter using CMOS technology. The level shifter w ill s h ift a T T L signal to CMOS logic levels fo r any CMOS supply voltage between 5 and 15 volts. A con­

400v 20 amp mosfet

Abstract: OM6230SS 6 AMP 1000V DIODE lead N CHANNEL MOSFET 10A 1000V OM6227SS OM6228SS OM6232SS OM6233SS TN-1500 MOSFET 1000v 10a
Contextual Info: OM6227SS QM6230SS OM6232SS OM6228SS OM6231SS OM6233SS DUAL HIGH CURRENT POWER MOSFETS IN HERMETIC ISOLATED SIP PACKAGE 400V, 500V, 1000V, Up To 24 Am p N-Channel, Dual Size 6 High Energy M OSFETs FEATURES • • • • • • • Dual Uncommitted MOSFETs

Wavetek HD160

Abstract: tektronix DM250 IEC1010 fluke 8012A BDM40
Contextual Info: a n d K its_ Depend on Pomona for Reliable Test Results Pomona continues to offer a complete selection of the most dependable DMM accessories available anywhere. Superior materials, robust designs and the highest quality craftsmanship

1.27mm pitch header box 36 pin 2row

Abstract: elco connector 8263 series FFC 0.8mm NPSF T1 diode catalogue STDH2 ELCO 8016 FPC CONNECTOR 25P hm 8370 40 pin zif connector 1mm FPC LCD
Contextual Info: CONNECTORS GUIDE 独創の精神で さらに高品位、 Innovative spirits achieves more sophisticated ISO9000シリーズは、1987年に国際標準化機構（ＩＳＯ）によって 制定された、品質保証に対する国際規格です。1993年のEC統合とヨー

MXED101

Abstract: oled display driver oled row driver
Contextual Info: MXED101 30V, 192-Channel OLED Display Driver Features • • • • • • • • • • • CMOS technology 192 output channels Programmable output current control The option of using 3.3V or 5V logic supply voltage 55MHz clock frequency A function for cascading more than one device