6260 THERMAL Search Results

Contextual Info: ECX-6260-39.000M RoHS Pb PLEASE NOTE: Due to the inherent proprietary nature of custom part numbers, certain parameters are intentionally excluded from this specification sheet. ECX-6260 -39.000M Series Ecliptek Custom Crystal Nominal Frequency 39.000MHz ELECTRICAL SPECIFICATIONS

Contextual Info: ECX-6260-39.000M TR RoHS Pb PLEASE NOTE: Due to the inherent proprietary nature of custom part numbers, certain parameters are intentionally excluded from this specification sheet. ECX-6260 -39.000M TR Series Ecliptek Custom Crystal Packaging Options Tape & Reel

infineon 6260

Abstract: P-DSO-36-12 400 wk1 C505C TWT Wiring C164C GPS05123 P-DSO-28-6 TLE6260
Contextual Info: confidential System Basis Chip TLE 6260 Preliminary Data Sheet 1 Overview 1.1 Features • • • • • • • • • • • • • • • • Fault tolerant differential CAN-transceiver CAN data transmission rate up to 125 kBaud Bus failure management

Contextual Info: TetraFET D1021UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 125W – 28V – 400MHz PUSH–PULL A C B 2 pls K 3 2 1 E D 5 4 G (4 pls) F FEATURES O • SIMPLIFIED AMPLIFIER DESIGN H M I J N • SUITABLE FOR BROAD BAND APPLICATIONS

D1021UK

Contextual Info: TetraFET D1021UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 125W – 28V – 400MHz PUSH–PULL A C B 2 pls K 3 2 1 E D 5 4 G (4 pls) F FEATURES O • SIMPLIFIED AMPLIFIER DESIGN H M I J N • SUITABLE FOR BROAD BAND APPLICATIONS

D1021UK

Contextual Info: TetraFET D1021UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 125W – 28V – 400MHz PUSH–PULL A C B 2 pls K 3 2 1 E D 5 4 G (4 pls) F FEATURES O • SIMPLIFIED AMPLIFIER DESIGN H M I J N • SUITABLE FOR BROAD BAND APPLICATIONS

6260G

Abstract: Electronic Volume Controller IC MS6260 MS6260MGTR MS6260MGU MS6260MTR MS6260MU MSOP10
Contextual Info: MOSA MS6260 Gain And Attenuation Volume Controller IC Gain and Attenuation Volume Controller IC One Set of Stereo Input, Low voltage Gain and Attenuation 15~-79dB, Good PSRR FEATURES APPLICATIONS ‧Operation range: 2.7V~5.5V ‧Low power consumption ‧Gain/Attenuation: 15dB to –79dB at 1dB/step

Contextual Info: AC Power Transducer DIN RAIL / PANEL MOUNT, ACTIVE / REACTIVE The CR6200 Series, Power Transducers and Transmitters are designed to provide a controlled output that is proportional to the average power. These devices are specifically targeted to provide an efficient solution to most power sensing needs.

MSA0185

Contextual Info: What HEWLETT* mLliM PA C K A R D Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0185 Features • Cascadable 50 Q. Gain Block • 3 dB Bandwidth: DC to 1.0 GHz • High Gain: 17.5 dB Typical at 0.5 GHz • Unconditionally Stable k > l • Low Cost Plastic Package

Contextual Info: H EW L E T T 1 "HM PA CK A R D Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0185 Features • C a sca d a b le 5 0 Q G ain B lo ck • 3 dB B an d w id th: DC to 1.0 GHz • H igh Gain: designed for use as a general purpose 50 i l gain block. Typical

Contextual Info: AC Power Transducer DIN RAIL / PANEL MOUNT, ACTIVE / REACTIVE The CR6200 Series, Power Transducers and Transmitters are designed to provide a controlled output that is proportional to the average power. These devices are specifically targeted to provide an efficient solution to most power sensing needs.

HP MMIC

Abstract: MSA-0185 A01 MMIC MSA0185
Contextual Info: Cascadable Silicon Bipolar MMIC␣ Amplifier Technical Data MSA-0185 Features • Cascadable 50 Ω Gain Block • 3 dB Bandwidth: DC to 1.0 GHz • High Gain: 17.5 dB Typical at 0.5 GHz • Unconditionally Stable k>1 • Low Cost Plastic Package Description

W7808

Abstract: cwdm add drop Demultiplexers W7800 1x16 DeMux 1x8 DeMux
Contextual Info: a8e re AdLib OCR Evaluation systems Advance Data Sheet February 2002 W7800-Type 20 nm Thin-Film, Coarse Wavelength-Division Multiplexers and Demultiplexers Applications . CWDM transmission . CWDM-based add/drop multiplexing . Wavelength-selective routing Description

M6-C16H

Abstract: SBC-845D-VEA ePCI-200 M6C16H M6-C16 MPGA478 SOCKET ATI MOBILITY RADEON M6-C16H RADEON Mobility M6 RADEON ATI Mobility Radeon
Contextual Info: ePCI-200 Next generation Pentium 4 processing, the natural evolution from the popular PICMG 1.0 PCI-ISA specification Intel Pentium® 4 Dual Bus PICMG 1.2 ePCI-X SHB Bringing PCI-X technology to embedded applications TM The ePCI-200 will reach new levels of performance in PICMG CPU boards.

EBGA368

Abstract: SAVAGE4 kontron viper SR-232 ePCI-200 Kontron VT100 power supply atx viper SR232
Contextual Info:         ePCI-102 ePCI half-size SBC VIA Eden up to 733 MHz or VIA Antaur up to 1.2 GHz Up to 512 MByte SDRAM 10/100 Base-T Ethernet USB 2.0 Sound If it´s Embedded, it´s Kontron. ePCI-102 Product Overview  Technical Information

ePCI-100

Abstract: kontron viper RS 4558 f 4558 810E 82810E LPC47B27X DSASW00217482 SBC brings Kontron Video RAM
Contextual Info: ePCI-100 Embedded PCI-X single board computer Featuring Intel Pentium® III or Celeron® processors with Intel® 810E chipset Kontron’s ePCI-100 takes the full benefits of PCI technology beyond the desktop and into a variety of embedded applications. Features include:

Contextual Info: PTFA211801E Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 180 W, 2110 – 2170 MHz Description The PTFA211801E is a thermally-enhanced, 180-watt, internally matched LDMOS FET intended for WCDMA applications. It is characaterized for single- and two-carrier WCDMA operation from

IRFF430R

Abstract: IRFF431R IRFF432R IRFF433R
Contextual Info: Rugged Power MOSFETs File Number 2031 IRFF430R, IRFF431R, IRFF432R, IRFF433R Avalanche Energy Rated N-Channel Power MOSFETs 2.25A and 2.75A, 450V-500V fDs on = 1 .50 and 2.00 N-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated ■ SO A is power-dissipation lim ited

Logic Level N-Channel Power MOSFET

Abstract: AN7254 AN7260 RFP2N20L TB334
Contextual Info: RFP2N20L Data Sheet July 1999 2A, 200V, 3.500 Ohm, Logic Level, N-Channel Power MOSFET File Number Features • 2A, 200V The RFP2N20L N-Channel enhancement mode silicon gate power field effect transistor is specifically designed for use with logic level 5V driving sources in applications such as

FL411

Abstract: zero crossing triac parallel triac
Contextual Info: SIEMENS IL4116 700vIL4117 8oovIL4118 600 V ZERO VOLTAGE CROSSING TRIAC DRIVER OPTOCOUPLER FEATURES • High Input Sensitivity Ift=1.3 mA, PF=1.0 lFT=3.S mA, Typical P F < 1.0 • Zero Voltage Crossing • 600/700/800 V Blocking Voltage • 300 mA On-State Current

RC5534NB

Abstract: RC5534ANB RM5534 RC5534ADE RC5534A raytheon RC5534 s7 200 noise Bt141 rc5534
Contextual Info: RAYTHEON-. SEMICONDUCTOR S7 p r o d u c t s p e c ific a tio n s 7 5 9 7 3 6 0 RAYTHEON CO* Raytheon D E | 7 ST 73 bü^ DD0 41 ô 1 û LINEAR INTEGRATED CIRCUITS ' 57C 0 4 6 8 9 High Performance Low Noise Operational Amplifier Features • Small signal bandwidth — 10MHz

6250G

Abstract: BOSCH cross reference IC BOSCH ISO 9141 6258G TLE 6250G 6261G High Speed CAN Transceiver IC Philips 6260G automotive bosch ic driver can bus chip bosch
Contextual Info: Transceiver Products Johann Winter AI AP SYS PM Page 1 Smart Power System IC‘s High Speed CAN Transceiver 3.3 3.3VVlogic logic version version TLE TLE6250GV33 6250GV33 coming comingsoon soon 55VVlogic logic version version TLE 6250 G Pin Pin compatible compatible

Contextual Info: RFP30N06LE, RF1S30N06LESM Semiconductor April 1999 Data Sheet 30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives

Contextual Info: TENTATIVE All information in this technical data sheet is tentative and subject to change without notice. Preliminary 5.7”VGA TECHNICAL SPECIFICATION AA057VF12 MITSUBISHI ELECTRIC Corp. Date: Oct.18,’11 MITSUBISHI Confidential 1/22 AA057VF12_02_00 CONTENTS