63BALL Search Results

TIB0

Abstract: K9F6408Q0C K9F6408Q0C-B K9F6408U0C K9F6408U0C-B K9F6408U0C-QCB0
Contextual Info: K9F6408Q0C K9F6408U0C FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Jul. 24 . 2001 Advance 0.1 1. IOL R/B of 1.8V device is changed. Nov. 5 . 2001 Preliminary -min. Value: 7mA ->3mA

Contextual Info: Spansion SLC NAND Flash Memory for Embedded 1 Gb, 2 Gb, 4 Gb Densities: 4-bit ECC, x8 and x16 I/O, 1.8V VCC S34MS01G2, S34MS02G2, S34MS04G2 Spansion® SLC NAND Flash Memory for Embedded Cover Sheet Data Sheet Preliminary Notice to Readers: This document states the current technical specifications regarding the Spansion

K9F1208U0C-PCB

Contextual Info: K9F1208U0C K9F1208R0C K9F1208B0C FLASH MEMORY K9F1208X0C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

SAMSUNG NAND Flash Qualification Report

Abstract: K9F1208U0CJIB0 marking date code samsung semiconductor
Contextual Info: K9F1208U0C K9F1208R0C K9F1208B0C FLASH MEMORY K9F1208X0C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

Contextual Info: Spansion SLC NAND Flash Memory for Embedded 1 Gb, 2 Gb, 4 Gb Densities: 4-bit ECC, x8 and x16 I/O, 3V VCC S34ML01G2, S34ML02G2, S34ML04G2 Spansion® SLC NAND Flash Memory for Embedded Cover Sheet Data Sheet Preliminary Notice to Readers: This document states the current technical specifications regarding the Spansion

Contextual Info: ADVANCE INFORM ATIO N AMD£I Am29LV033C 32 Megabit 4 M x 8-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES SOFTWARE FEATURES • Zero Power Operation ■ — Sophisticated power management circuits reduce

29LV641

Abstract: 29LV640D
Contextual Info: A D V A N C E IN F O R M A T IO N AMDil Am29LV640DU/Am29LV641 DU 64 Megabit 4 M x 16-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory with Versatilel/O Control DISTINCTIVE CHARACTERISTICS • ■ Single power supply operation Compatibility with JEDEC standards

L323C

Contextual Info: ADVANCE INFORMATION AMDZ1 Am29DL32xC 32 Megabit 4 M x 8 -Bit/2 M x 16-Bit CMOS 3.0 Volt-only, Sim ultaneous Operation Flash Mem ory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank w hile

29LV033C

Contextual Info: ADVANCE INFORMATION AMD£I Am29LV033C 32 Megabit 4 M x 8-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES SOFTWARE FEATURES • Zero Power Operation ■ — Sophisticated power management circuits reduce

032XM

Contextual Info: ADVANCE INFORMATION AMDB Am29LV033C 32 Megabit 4 M x 8-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES SOFTWARE FEATURES • Zero Power Operation ■ — Sophisticated power management circuits reduce

MT29F4G08ABADAWP

Abstract: Micron MT29F8G08 MT29F8G16 MT29F4G16ABBDAH4 MT29F8G16ADBDAH4 MT29F4G08abada MT29F4G08ABA MT29F4G08ABADAH4 MT29F8G08A MT29F4G08
Contextual Info: Micron Confidential and Proprietary 4Gb, 8Gb: x8, x16 NAND Flash Memory Features NAND Flash Memory MT29F4G08ABADAH4, MT29F4G08ABADAWP, MT29F4G08ABBDAH4, MT29F4G08ABBDAHC, MT29F4G16ABADAH4, MT29F4G16ABADAWP, MT29F4G16ABBDAH4, MT29F4G16ABBDAHC, MT29F8G08ADADAH4,

KFG2G16Q2A

Abstract: 0307h 0719h 63FBGA KFG2G16 onenand oneNand flash
Contextual Info: OneNAND2G KFG2G16Q2A-DEBx OneNAND4G(KFH4G16Q2A-DEBx) FLASH MEMORY KFG2G16Q2A KFH4G16Q2A 2Gb OneNAND A-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

63FBGA

Abstract: KFG1G16Q2B onenand
Contextual Info: OneNAND1Gb KFG1G16Q2B-DEBx FLASH MEMORY KFG1G16Q2B 1Gb OneNAND B-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

K9F2808U0B-YCB0

Abstract: K9F2808Q0B K9F2808Q0B-D K9F2808Q0B-DCB0 K9F2808U0B K9F2808U0B-DCB0 K9F2808U0B-VCB0 K9F2808U0B-Y
Contextual Info: K9F2808Q0B-DCB0,DIB0 K9F2808U0B-VCB0,VIB0 K9F2808Q0B:Preliminary K9F2808U0B-YCB0,YIB0 K9F2808U0B-DCB0,DIB0 FLASH MEMORY Document Title 16M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark Advance 0.0 Initial issue. May 28’th 2001

K9F1208B0B

Abstract: K9F1208B0B-G K9F1208B0B-Y K9F1208R0B K9F1208R0B-G K9F1208U0B K9F1208U0B-G K9F1208U0B-V K9F1208U0B-Y K9F1208U0BYCB0
Contextual Info: K9F1208R0B K9F1208B0B K9F1208U0B FLASH MEMORY Document Title 64M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 0.1 Initial issue. 1. Note 1 Program/Erase Characteristics is added( page 14 ) 2. NAND Flash Technical Notes is changed.

28F256L30

Abstract: 28F128L30 28F640L30
Contextual Info: 1.8 Volt Intel StrataFlash Wireless Memory with 3.0 Volt I/O L30 28F640L30, 28F128L30, 28F256L30 Datasheet Product Features • High performance Read-While-Write/Erase — 90 ns initial access — 50MHz with zero wait state, 17 ns clock-to-data output synchronous-burst mode

MX30UF4G26AB

Abstract: MX30UF4G28AB MX30UF2G26AB MX30UF2G28AB SLC NAND
Contextual Info: MX30UF2G26 28 AB MX30UF4G26(28)AB 1.8V, 2G/4G-bit NAND Flash Memory MX30UFxG26(28)AB P/N: PM2031 REV. 1.0, MAY 29, 2014 1 MX30UF2G26(28)AB MX30UF4G26(28)AB Contents 1.

Contextual Info: TM SPANSION Flash Memory Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,

MARKING SA70

Abstract: MBM29DL324
Contextual Info: TM SPANSION Flash Memory Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20892-1E FLASH MEMORY CMOS 32M 2M x 16 BIT Page Dual Operation MBM29PDD322TE/BE 90/12 • DESCRIPTION The MBM29PDD322TE/BE is 32M-bit, 2.5 V-only Flash memory organized as 2M words of 16 bits each. The device is offered in 48-pin TSOP(I) and 63-ball FBGA packages. This device is designed to be programmed in

29lv641

Contextual Info: AMD£I ADVANCE INFORMATION Am29LV640DU/Am29LV641 DU 64 Megabit 4 M x 16-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory with Versatilel/O Control DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — 2.7 to 3.6 volt read, erase, and program operations

AM29LV033C-120

Abstract: AM29LV033C-70 AM29LV033C-90 SA10 SA11 L033C AM29LV033C
Contextual Info: Am29LV033C Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

AM29DL640H

Abstract: FTE073 PDL127 PDL127H PDL129 PDL129H cef3 sa2111 AM29DL640
Contextual Info: Am75PDL191BHHa/ Am75PDL193BHHa Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

Samsung K9F5608U0D PCB0

Abstract: K9F5608U0D K9F5608U0D-P K9F5608U0D-FCB0 pcb0
Contextual Info: K9F5608R0D K9F5608U0D K9F5608D0D FLASH MEMORY K9F5608X0D INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,