640NC Search Results
640NC Price and Stock
TE Connectivity 4-1437664-0 (NC6-P108-07)Buchanan Conn Term Strip 7 Position 9.53 mm Single Row |
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4-1437664-0 (NC6-P108-07) | Bulk | 316 | 1 |
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IXYS Corporation IXTX90N25L2MOSFETs 90 Amps 250V |
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IXTX90N25L2 | Tube | 300 |
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IXYS Corporation IXFX320N17T2MOSFETs GigaMOS Trench T2 HiperFET PWR MOSFET |
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IXFX320N17T2 | Tube | 300 |
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IXYS Corporation IXTK90N25L2MOSFETs 90 Amps 250V |
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IXTK90N25L2 | Tube | 300 |
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Telemechanique Sensors XUY640NC4P02M12Sensor: photoelectric |
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XUY640NC4P02M12 | 1 |
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640NC Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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HFA50HF20Contextual Info: PD 2.506 HFA50HF20 PRELIMINARY HEXFRED TM Ultrafast, Soft Recovery Diode VR = 200V CATHODE Features • • • • • Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic Surface Mount V F = 0.96V Qrr * = 640nC |
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HFA50HF20 640nC HFA50HF20 | |
Diode 400V 5A
Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
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2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN | |
Contextual Info: International iSSRRectifi er PD2,506 H F A 5 0 H F 20 PRELIMINARY HEXFRED Ultrafast, Soft Recovery Diode V r = 200V CATHODE o Features • • • • • Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic Surface Mount |
OCR Scan |
640nC 80A/ps |