642 PHILIPS Search Results

232264273102

Contextual Info: SERIES 642-7 NTC Therm istors for Temperature Measurement and Compensation DESCRIPTION The Series 642-7 NTC Thermistors are mounted in a metric threaded aluminum bolt and are intended for general use. Available in 10% and 5%. ELECTRICAL SPECIFICATIONS Dissipation

232264262152

Abstract: NTC-1K510%/232264262152
Contextual Info: SERIES 6 4 2 -6 NTC Thermistors for Temperature Measurement and Compensation DESCRIPTION The Series 642-6 NTC Thermistors are radial leaded, color coded devices intended for general use. Available in 10% and 5%. ELECTRICAL SPECIFICATIONS D issip atio n . 500 mW maximum

HD6413003F16

Abstract: hd6413002f16 HD6473042F16 TL084-LM324 piezo autotransformer HD6413004F16 HD6413005F16 laptop inverter SCHEMATIC TRANSISTOR 6N138 SPICE HD6413003F-16
Contextual Info: INDEX Order Code Description Manufacturer 549-435 549-447 642-666 ZM33064C 789-239 ZSD1000D8 789-276 663-232 663-244 707-790 TD300IN 787-346 TSH10IN TSH11IN TS271CN TS274ID TS902IN TS912IN TS3V393IN TS3702ID 789-872 — 789-859 — OPT101P BUF634P 789-744

SENSOR CON EFECTO HALL

Abstract: Receptor optico Best pioneer car dvd service manual, laser optico 13ES X 33 amplificador Toshiba hay 22 akai hitachi dolby surround malayalam
Contextual Info: 3-865-642-31 1 CD/DVD Player Operating Instructions EN Manual de instrucciones ES PT 1 2 3 4 5 6 7 8 9 DVP-S530D  1999 by Sony Corporation WARNING To prevent fire or shock hazard, do not expose the unit to rain or moisture. To avoid electrical shock, do not open the cabinet.

philips NTC 2322 640 66103

Abstract: philips NTC 2322 640 63153 ntc 2322 642 6
Contextual Info: NTC Thermistors For Temperature Sensing i 1 640 S e rie s 2 3 2 2 . R e s is t a n c e v a lu e a t 2 5 "C 0 . 6406. i 6405. 642 6. | R2, = 2.2k 12 to 470 kQ R ,c = 470 I t to 470 k l 2 R , = 2.7 kQ . 4.7 kQ . 10 kQ , 47 k it . 100 kQ

D472M39Z5UN

Abstract: Y5p philips disc ceramic cap D122K 104 Ceramic Disc Capacitors
Contextual Info: Philips Components Product specification Class 1 and 2, 1/2/3/6 kV general purpose Ceramic disc capacitors FEATURES QUICK REFERENCE DATA • Low losses • High stability DESCRIPTION VALUE Capacitance range: • High capacitance in small size Class 1 10 to 270 pF

PHILIPS ntc 2322 645

Abstract: PHILIPS ntc 2322 642 philips 2322 ntc PHILIPS ntc 2322 640 Philips 2322 691 90001 ntc 2322 642 6 PHILIPS ntc 2322 640 5 philips NTC thermistors 626 Philips 2322 640 63 philips 2322 642
Contextual Info: Philips Components Product specification Varistors, Thermistors and Sensors Selection guide NEGATIVE TEMPERATURE COEFFICIENT NTC THERMISTORS PRODUCT FUNCTION Temperature sensing and control RANGE accuracy line special accuracy high temperature sensors PAGE

Sprague 32D

Abstract: SPRAGUE 622d 5033R C312C 708D1 704C1
Contextual Info: COMPETITOR CROSS REFERENCE I " P IN U P S P H ILIP S P H ILIP S C O M P E T IT O R C O M P E T IT O R C O M P O N EN T S PAGE C O M P E T IT O R C O M P E T IT O R C O M P O N EN T S

UHF amplifier module

Abstract: BGY916 UHF AMPLIFIER MSA447 2 TMT 15-4
Contextual Info: Philips Semiconductors Preliminary specification UH F amplifier module BG Y916 APPLICATION PINNING • Base station transmitting equipment operating in the 920 to 960 MHz frequency band. PIN DESCRIPTION The BGY916 is a three-stage UHF amplifier module in a

Contextual Info: i N AMER PHILIPS/DISCRETE T> i bbSBTBl DDBfiDlB 21b MPSA55 MPSA56 7 v APX SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P silicon planar epitaxial transistors in plastic TO-92 envelope for general purpose applications. QUICK REFERENCE DATA MPSA55 MPSA56 Collector-emitter voltage

Contextual Info: Philips Semiconductors b bS3 T3 i ooa^abs oaa APX Objective specification UHF power transistor BLV946 AMER PHILIPS/DISCRETE b'lE » QUICK REFERENCE DATA FEATURES • Double internal input matching for easy matching and high gain • Poly-silicon emitter ballasting

PCFB

Contextual Info: Philips Sem iconductors Preliminary specification 8-bit microcontroller PCF84C12A/22A/42A FOR DETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK IC14 OR DATA SHEET FEATURES • 8-bit CPU, ROM, RAM, I/O in a single 20-lead package • 1k ROM bytes PCF84C12A

sot273

Abstract: TRANSISTOR 642 BLV946 Transistor with common base
Contextual Info: Philips Semiconductors bbüB^Bl OGETEbB DÛE HIAPX Objective specification BLV946 UHF power transistor •N AMER PHILIPS/DISCRETE b'iE D QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter test circuit. FEATURES • Double internal input matching

BFQ32M

Abstract: of bfq63 BFQ63 transistor 643
Contextual Info: Philips Semiconductors Product specification NPN 5 GHz wideband transistor PHILIPS INTERN A T I O N A L DESCRIPTION BFQ63 SbE D • 711Gô2b G04S4Ô4 SDD ■ PHIN PINNING NPN transistor in a 10-12 metal envelope with insulated electrodes and a shield lead connected to the

TEA1041T

Contextual Info: Philips Sem iconductors Preliminary specification Battery low-level indicator TEA1041T FOR DETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK IC11 OR DATA SHEET FEATURES • • Optical signal following battery low-level detection QUICK REFERENCE DATA UNIT

Contextual Info: H Philips S em iconductors lati53T31 00315T5 TQS H A P X ^Productspecification NPN 5 GHz wideband transistor BFQ63 N AUER PHIL IPS/DISCRETE DESCRIPTION bRE D PINNING NPN transistor in a TO-72 metal envelope with insulated electrodes and a shield lead connected to the

BFQ63

Abstract: BFQ32M of bfq63
Contextual Info: Philips Semiconductors bibi.53,:] 3 1 G G B IS T S TGS HAPX Product specification NPN 5 GHz wideband transistor BFQ63 N AMER PHILIPS/DISCRETE DESCRIPTION b'IE D PINNING NPN transistor in a TO-72 métal envelope with insulated electrodes and a shield lead connected to the

"Programmable Unijunction Transistor"

Abstract: Programmable Unijunction Transistor BRY56 unijunction transistor 642 philips MBB696
Contextual Info: Philips Semiconductors Product specification Programmable unijunction transistor DESCRIPTION BRY56 PINNING Planar PNPN trigger device in a TO-92; SOT54 plastic package. APPLICATIONS PIN DESCRIPTION 1 gate 2 anode 3 cathode • Switching applications such as:

AN11

Contextual Info: Philips Components-Signetics Application Note Data of Issue November 1986 Rev. Date AN11 PLD programmable retriggerable one-shot Programmable Logic Devices Author: David Wong FEATURES • Programmable pulse-width/delay • Maximum 256 dock cycles • Asynchronous TRIGGER input

Contextual Info: BYX56 SERIES M A INTENANCE TYPE - PHILIPS INTERNATIONAL SbE D • 711Dû2t. □ □41t.4b STT ■ PHIN T z p r-n CONTROLLED AVALANCHE RECTIFIER DIODES Silicon diodes in a DO—5 metal envelope, capable of absorbing transients and intended fo r power rectifier applications.

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ403AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor

Byx56 1500

Abstract: BYX56-1400R BYX56-600 BYX56 BYX56/600 BYX56-1400 BYX56-600R IEC134 T0119
Contextual Info: N AMER PHILIPS/DISCRETE MAINTENANCE TYPE BSE D ^53=131 Q0S5Ô41 5 B BYX56 SERIES 7 ^ 0 1 -1 9 CONTROLLED AVALANCHE RECTIFIER DIODES Silicon diodes in a DO— 5 metal envelope, capable of absorbing transients and intended fo r power rectifier applications.

BYX56-600

Abstract: Byx56 1500 t0711 BYX56-600R BYX56 BYX56-1400 BYX56-1400R IEC134 BYX56/BYX56-600R
Contextual Info: BYX56 SERIES M AIN TEN AN C E TYPE SbE D - PHILIPS INTERNATIONAL • 7110A2b 0041b4b STT ■ PHIN T -0 7 -1 CONTROLLED AVALANCHE RECTIFIER DIODES Silicon diodes in a DO— 5 metal envelope, capable of absorbing transients and intended for power rectifier applications.

18VTHD

Abstract: ECG1278
Contextual Info: PHILIPS E C G INC ECG 17E Q ECG1278 5.8 W Audio Power Amplifier ECG1278 Is a silicon monolithic Integrated cir­ cuit designed as an audio power amplifier. It is Ideally suited for applications in automotive radio or stereo designs. It has 5.8 W output power when operating at a supply voltage of