64MBIT Search Results

123401

Contextual Info: AVED MEMORY PRODUCTS Where Quality & Memory Merge AVEF29LV065U32SJ08-XX 32MB FLASH SIMM, based on AMD Am29LV065D Uniform Sector Flash Memory DESCRIPTION PIN CONFIGURATIONS AVED Memory Products AVEF29LV065U32SJ08-XX is a Flash Memory SIMM, composed of four 64Mbit CMOS flash memories, each organized as 8M X 8 bits mounted on a substrate

LH28F640BFHG-PBTL70A

Contextual Info: PRELIMINARY PRODUCT SPECIFICATION Integrated Circuits Group LH28F640BFHG-PBTL70A Flash Memory 64Mbit 4Mbitx16 (Model Number: LHF64FH9) Spec. Issue Date: September 27, 2004 Spec No: FM045022A LHF64FH9 • Handle this document carefully for it contains material protected by international copyright law. Any reproduction,

Enhanced SDRAM

Contextual Info: 64Mbit – Enhanced SDRAM 8Mx8, 4Mx16 ESDRAM Preliminary Data Sheet Overview Features • • • • • • • • • • • • • • High Performance 166 MHz Superset to SDRAM 100% Pin Compatible with SDRAM 100% Function and Timing Compatible with JEDEC

SM2603

Contextual Info: 64Mbit - Enhanced SDRAM 8Mx8, 4Mx16 ESDRAM Product Brief Features • 100% Pin Compatible with SDRAM • 100% Function and Timing Compatible with JEDEC standard SDRAM • Integrated 16Kbit SRAM Row Cache • Four Bank Architecture • Synchronous Operation up to 166MHz

SM3603

Abstract: Enhanced Memory Systems 8mx8 SM3604T-7
Contextual Info: 64Mbit – High Speed SDRAM 8Mx8, 4Mx16 HSDRAM Data Sheet Features Description • • • • The Enhanced Memory Systems SM3603 and SM3604 HighSpeed SDRAM HSDRAM devices are high performance versions of the proposed JEDEC PC-133 SDRAM. While compatible with standard SDRAM, they provide the faster

Contextual Info: Memory Systems Inc. 3 !nd^ st^ TenJPo i S am 64Mbit - High Speed SDRAM 8Mx8, 4Mx16 HSDRAM Preliminary Data Sheet Features Description • • • • The Enhanced Memory Systems SM3603 and SM3604 HighSpeed SDRAM HSDRAM devices are high performance versions of the proposed JEDEC PC-133 SDRAM. The

Contextual Info: V54C365 16/80/40 4VE 64Mbit SDRAM 3.3 VOLT, TSOP II / FBGA 4M X 16, 8M X 8, 16M X 4 6 7PC 7 8PC System Frequency (fCK) 166 MHz 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3 5.4 ns 5.4 ns 5.4 ns

Contextual Info: V54C365 16/80/40 4VE 64Mbit SDRAM 3.3 VOLT, TSOP II / FBGA 4M X 16, 8M X 8, 16M X 4 6 7PC 7 8PC System Frequency (fCK) 166 MHz 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3 5.4 ns 5.4 ns 5.4 ns

Contextual Info: V54C365 16/80/40 4VE 64Mbit SDRAM 3.3 VOLT, TSOP II / FBGA 4M X 16, 8M X 8, 16M X 4 6 7PC 7 8PC System Frequency (fCK) 166 MHz 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3 5.4 ns 5.4 ns 5.4 ns

Contextual Info: HY51V S 64403HG/HGL 16M x 4Bit EDO DRAM PRELIMINARY DESCRIPTION This familiy is a 64Mbit dynamic RAM organized 16,777,216 x 4 bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The advanced circuit and process allow this device to achieve high performance and low power dissipation. Features are access time(45ns or 50ns) and refresh cycle(8K ref ) and power consumption

Contextual Info: M25P64 64 Mbit, Low Voltage, Serial Flash Memory With 50MHz SPI Bus Interface FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 64Mbit of Flash Memory 2.7 to 3.6V Single Supply Voltage SPI Bus Compatible Serial Interface 50MHz Clock Rate maximum

Contextual Info: HY51V S 65163HG/HGL 4M x 16Bit EDO DRAM PRELIMINARY DESCRIPTION This familiy is a 64Mbit dynamic RAM organized 4,194,304 x 16bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The advanced circuit and process allow this device to achieve high performance and low power dissipation. Features are access time(45ns or 50ns) and refresh cycle(4K ref ) and power consumption (Normal

Contextual Info: K4S640832E CMOS SDRAM 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.1 Sept. 2001 K4S640832E CMOS SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM

Contextual Info: HY51V64400HG 16M x 4Bit Fast Page DRAM PRELIMINARY DESCRIPTION This familiy is a 64Mbit dynamic RAM organized 16,777,216 x 4 bit configuration with Fast Page mode CMOS DRAMs. Fage page mode offers high speed of random access memory within the same row. The

8096 microcontroller features

Abstract: ST10 MX23L6454 MX23L6454MC-20 MX23L6454MC-20G MX23L6454MI-20G PM1127
Contextual Info: MX23L6454 64M-BIT Low Voltage, Serial Mask ROM Memory with 50MHz SPI Bus Interface FEATURES DESCRIPTION • • • • The MX23L6454 is a 64Mbit Serial Mask ROM accessed by a high speed SPI-compatible bus. 64Mbit of Mask ROM 2.7 to 3.6V Single Supply Voltage

Contextual Info: TRAILING EDGE PRODUCT - MINIMUM ORDER APPLIES 8M x 8 SRAM MODULE SYS88000RKX - 70/85/10/12 Elm Road, West Chirton, NORTH SHIELDS, Tyne & Wear NE29 8SE, England Tel. +44 0191 2930500 Fax.+44 (0191) Issue 1.4 : January 1999 2590997 Description Features The SYS88000RKX is a plastic 64Mbit Static RAM

74FCT245

Contextual Info: 8M x 8 SRAM MODULE SYS88000RKX - 70/85/10/12 11403 West Bernado Court, Suite 100, San Diego, CA 92127. Tel No: 619 674 2233, Fax No: (619) 674 2230 Issue 1.4 : January 1999 Description Features The SYS88000RKX is a plastic 64Mbit Static RAM Module housed in a standard 38 pin Single In-Line

Contextual Info: K4S641632E-TI P CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 January 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.1 Jan. 2001 K4S641632E-TI(P) CMOS SDRAM Revision History

512k x 8 chip block diagram

Abstract: 512K x 8 bit sram 32 pin 2M x 32 chip block diagram 512k x 8 SRAM
Contextual Info: 2M x 32 SRAM MODULE SYS322000ZK-015/020/025 11403 West Bernado Court, Suite 100, San Diego, CA 92127. Tel No: 619 674 2233, Fax No: (619) 674 2230 Description The SYS322000ZK is a plastic 64Mbit Static RAM Module offered in a low profile 72 pin ZIP package, organised as 2M x 32. The module

Contextual Info: J5SEnhanced Memory ^sterns Inc. 64Mbit - High Speed SDRAM 8Mx8, 4Mx16 HSDRAM Preliminary Data Sheet Features Description • • • The Enhanced Memory Systems SM3603 and SM3604 HighSpeed SDRAM HSDRAM devices are high performance versions of the proposed JEDEC PC-133 SDRAM. While

IS66WVE4M16ALL-70TLI

Contextual Info: IS66WVE4M16ALL Advanced Information 1.8V Core Async/Page PSRAM Overview The IS66WVE4M16ALL is an integrated memory device containing 64Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4M words by 16 bits. The device includes several

LH28F640BFHE-PtTL70

Abstract: LH28F640BFHE-PTTL70A
Contextual Info: PRELIMINARY PRODUCT SPECIFICATION Integrated Circuits Group LH28F640BFHE-PTTL70A Flash Memory 64Mbit 4Mbitx16 (Model Number: LHF64FG7) Spec. Issue Date: September 2, 2004 Spec No: EL165127A LHF64FG7 • Handle this document carefully for it contains material protected by international copyright law. Any reproduction,

Contextual Info: SIEMENS HYB39S64400/800/160AT L 64MBit Synchronous DRAM 64 MBit Synchronous DRAM • High Performance: Multiple Burst Operation -8 -8B -10 Units fCKmax. 125 100 100 MHz tCK3 8 10 10 ns tAC3 6 6 7 ns Automatic Command and Read with Single Write Controlled

Contextual Info: M28W320FSU M28W640FSU 32Mbit 2Mb x16 and 64Mbit (4Mb x16) 3V Supply, Uniform Block, Secure Flash Memories FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 2.7V to 3.6V for Input/Output