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    MT48LC2M32B2P

    Abstract: MT48LC2M32B2 MT48LC2M32B2P-7 MT48LC2M32B2TG 2M32B2 *48LC2M32 H9612
    Text: 64Mb: x32 SDRAM Features Synchronous DRAM MT48LC2M32B2 – 512K x 32 x 4 banks For the latest data sheet, refer to Micron’s Web site Features Table 1: • PC100 functionality • Fully synchronous; all signals registered on positive edge of system clock


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    PDF MT48LC2M32B2 PC100 096-cycle 09005aef811ce1fe/Source: 09005aef811ce1d5 64MSDRAMx32 MT48LC2M32B2P MT48LC2M32B2 MT48LC2M32B2P-7 MT48LC2M32B2TG 2M32B2 *48LC2M32 H9612

    09005aef811ce1d5

    Abstract: MT48LC2M32B2 MT48LC2M32B2TG-7G
    Text: 64Mb: x32 SDRAM SYNCHRONOUS DRAM MT48LC2M32B2 - 512K x 32 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/sdramds FEATURES • PC100 functionality • Fully synchronous; all signals registered on positive edge of system clock


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    PDF MT48LC2M32B2 PC100 096-cycle 09005aef811ce1fe/Source: 09005aef811ce1d5 64MSDRAMx32 09005aef811ce1d5 MT48LC2M32B2TG-7G

    MT48LC2M32B2

    Abstract: No abstract text available
    Text: 64Mb: x32 SDRAM SYNCHRONOUS DRAM MT48LC2M32B2 - 512K x 32 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/sdramds FEATURES • PC100 functionality • Fully synchronous; all signals registered on positive edge of system clock


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    PDF MT48LC2M32B2 PC100 096-cycle 025mm 09005aef811ce1d5 64MSDRAMx32

    P-TSOPII-54

    Abstract: caz smd PC133 registered reference design
    Text: HYB 39S64400/800/160ET L 64-MBit Synchronous DRAM 64-MBit Synchronous DRAM Preliminary Datasheet • Automatic and Controlled Precharge Command • High Performance: -7 -7.5 -8 Units fCKMAX 143 133 125 MHz tCK3 7 7.5 8 ns tAC3 5.4 5.4 6 ns tCK2 7.5 10 10


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    PDF 39S64400/800/160ET 64-MBit P-TSOPII-54 caz smd PC133 registered reference design

    SMD MARKING T20

    Abstract: smd marking T22 MARKING A3 SMD MARKING CODE a09
    Text: HYB 39S64400/800CT L 64-MBit Synchronous DRAM 64-MBit Synchronous DRAM • High Performance: • Full page (optional) for sequential wrap around • Multiple Burst Read with Single Write Operation -7.5 -8 Units fCKMAX 133 125 MHz tCK3 7.5 8 ns • Automatic and Controlled Precharge


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    PDF 39S64400/800CT 64-MBit SPT03933 SMD MARKING T20 smd marking T22 MARKING A3 SMD MARKING CODE a09

    MT48LC2M32B2P

    Abstract: No abstract text available
    Text: 64Mb: x32 SDRAM Features Synchronous DRAM MT48LC2M32B2 – 512K x 32 x 4 banks For the latest data sheet, refer to Micron’s Web site: www.micron.com/products/dram/sdram Features Table 1: • PC100 functionality • Fully synchronous; all signals registered on positive


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    PDF MT48LC2M32B2 PC100 096-cycle 09005aef811ce1fe/Source: 09005aef811ce1d5 64MSDRAMx32 MT48LC2M32B2P

    Untitled

    Abstract: No abstract text available
    Text: 64Mb: x4, x8, x16 SDRAM Features Synchronous DRAM MT48LC16M4A2 – 4 Meg x 4 x 4 banks MT48LC8M8A2 – 2 Meg x 8 x 4 banks MT48LC4M16A2 – 1 Meg x 16 x 4 banks For the latest data sheet, refer to Micron’s Web site: www.micron.com/sdram Features Options


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    PDF MT48LC16M4A2 MT48LC8M8A2 MT48LC4M16A2 PC100-, PC133-compliant 096-cycle p8-3900 09005aef80725c0b/Source: 09005aef806fc13c 64MSDRAM

    PC133 registered reference design

    Abstract: No abstract text available
    Text: 64Mb: x4, x8, x16 SDRAM MT48LC16M4A2 -4 Meg x 4 x 4 banks MT48LC8M8A2 - 2 Meg x 8 x 4 banks MT48LC4M16A2 -1 Meg x 16 x 4 banks SYNCHRONOUS DRAM For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES


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    PDF PC66-, PC100- PC133-compliant 096-cycle MT48LC16M4A2 MT48LC8M8A2 MT48LC4M16A2 64MSDRAM PC133 registered reference design

    MT48LC2M32B2

    Abstract: No abstract text available
    Text: 64Mb: x32 SDRAM SYNCHRONOUS DRAM MT48LC2M32B2 - 512K x 32 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micronsemi.com/datasheets/sdramds.html FEATURES • PC100 functionality • Fully synchronous; all signals registered on positive


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    PDF MT48LC2M32B2 PC100 096-cycle 025mm 64MSDRAMx32

    MT48LC16M4A2

    Abstract: MT48LC4M16A2 MT48LC8M8A2
    Text: 64Mb: x4, x8, x16 SDRAM SYNCHRONOUS DRAM MT48LC16M4A2 – 4 Meg x 4 x 4 banks MT48LC8M8A2 – 2 Meg x 8 x 4 banks MT48LC4M16A2 – 1 Meg x 16 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/dramds FEATURES PIN ASSIGNMENT Top View


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    PDF MT48LC16M4A2 MT48LC8M8A2 MT48LC4M16A2 PC66-, PC100-, PC133-compliant 096-cycle 64MSDRAM MT48LC16M4A2 MT48LC4M16A2 MT48LC8M8A2

    20 pin laptop lcd connector

    Abstract: toshiba lcd controller board lcd monitor block diagram LCD-Adapter-NL3224BC35-20 LCD INVERTER BOARD toshiba LCD 320X240 laptop lcd backlight inverter laptop lcd 20 pin diagram 20 pin lcd laptop LCD 320X240
    Text: Application Note AC294 IGLOO-VIDEO-BOARD Upscaling Reference Design Demonstration Objective The IGLOO-VIDEO-BOARD Upscaling Reference Design demonstrates an IGLOO FPGA as an LCD controller with video upscaling feature Figure 1 . The setup is similar to the DVI Input to LCD Reference


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    PDF AC294 20 pin laptop lcd connector toshiba lcd controller board lcd monitor block diagram LCD-Adapter-NL3224BC35-20 LCD INVERTER BOARD toshiba LCD 320X240 laptop lcd backlight inverter laptop lcd 20 pin diagram 20 pin lcd laptop LCD 320X240

    256MSDRAM

    Abstract: celestica
    Text: HYS 64/72V8300/16220GU SDRAM-Modules 3.3 V 8M x 64/72-Bit 1 Bank SDRAM Module 3.3 V 16M × 64/72-Bit 2 Bank SDRAM Module 168-Pin Unbuffered DIMM Modules • Programmed Latencies: • 168-Pin unbuffered 8-Byte Dual-In-Line SDRAM Modules for PC main memory


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    PDF 64/72V8300/16220GU 64/72-Bit 168-Pin PC100 PC133 PC133 256MSDRAM celestica

    MT48LC16M4A2

    Abstract: MT48LC16M4A2TG MT48LC4M16A2 MT48LC8M8A2 MT48LC8M8A2TG-75 TN-48-05 MT48LC4M16A2B41
    Text: 64Mb: x4, x8, x16 SDRAM Features Synchronous DRAM MT48LC16M4A2 – 4 Meg x 4 x 4 banks MT48LC8M8A2 – 2 Meg x 8 x 4 banks MT48LC4M16A2 – 1 Meg x 16 x 4 banks For the latest data sheet, refer to Micron’s Web site: www.micron.com/sdram Features Options


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    PDF MT48LC16M4A2 MT48LC8M8A2 MT48LC4M16A2 PC100- PC133-compliant 096-cycle outpu208-368-3900 09005aef80725c0b/Source: 09005aef806fc13c 64MSDRAM MT48LC16M4A2 MT48LC16M4A2TG MT48LC4M16A2 MT48LC8M8A2 MT48LC8M8A2TG-75 TN-48-05 MT48LC4M16A2B41

    PC133-333

    Abstract: P-TSOPII-54 hyb39s64400
    Text: HYB39S64400/800/160A/BT L 64MBit Synchronous DRAM Ultra High Speed 64 MBit Synchronous DRAM PC143 & PC133 • High Performance: -7 -7.5 Units fCKmax. 143 133 MHz tCK3 7 7.5 ns tAC3 5.4 5.4 ns tCK2 10 10 ns tAC2 5.5 6 ns • Fully Synchronous to Positive Clock Edge


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    PDF HYB39S64400/800/160A/BT 64MBit PC143 PC133 P-TSOPII-54 400mil PC143 PC133 PC133-333 hyb39s64400

    Untitled

    Abstract: No abstract text available
    Text: 64Mb: x32 SDRAM SYNCHRONOUS DRAM MT48LC2M32B2 - 512K x 32 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES • PC100 functionality • Fully synchronous; all signals registered on


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    PDF PC100 096-cycle MT48LC2M32B2 64MSDRAMx32

    Untitled

    Abstract: No abstract text available
    Text: 64Mb: x4, x8, x16 SDRAM SYNCHRONOUS DRAM MT48LC16M4A2 – 4 Meg x 4 x 4 banks MT48LC8M8A2 – 2 Meg x 8 x 4 banks MT48LC4M16A2 – 1 Meg x 16 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/dramds FEATURES PIN ASSIGNMENT Top View


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    PDF PC66-, PC100-, PC133-compliant 096-cycle MT48LC16M4A2 MT48LC8M8A2 MT48LC4M16A2 09005aef80725c0b/Source: 09005aef806fc13c 64MSDRAM

    MT48LC2M32B2P-7G

    Abstract: MT48LC2M32B2P
    Text: 64Mb: x32 SDRAM Features Synchronous DRAM MT48LC2M32B2 – 512K x 32 x 4 banks For the latest data sheet, refer to Micron’s Web site: www.micron.com/sdram Features Table 1: • PC100 functionality • Fully synchronous; all signals registered on positive


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    PDF MT48LC2M32B2 PC100 096-cycle Conf900 09005aef811ce1fe/Source: 09005aef811ce1d5 64MSDRAMx32 MT48LC2M32B2P-7G MT48LC2M32B2P

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE 64Mb: x32 SDRAM MT48LC2M32B2 - 512K x 32 x 4 banks SYNCHRONOUS DRAM For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES • PC100 functionality • Fully synchronous; all signals registered on positive


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    PDF PC100 096-cycle MT48LC2M32B2 64MSDRAMx32 7/99a

    MT48LC16M4A2

    Abstract: MT48LC4M16A2 MT48LC8M8A2
    Text: 64Mb: x4, x8, x16 SDRAM SYNCHRONOUS DRAM MT48LC16M4A2 – 4 Meg x 4 x 4 banks MT48LC8M8A2 – 2 Meg x 8 x 4 banks MT48LC4M16A2 – 1 Meg x 16 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/dramds FEATURES PIN ASSIGNMENT Top View


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    PDF MT48LC16M4A2 MT48LC8M8A2 MT48LC4M16A2 PC66-, PC100-, PC133-compliant 096-cycle 64MSDRAM MT48LC16M4A2 MT48LC4M16A2 MT48LC8M8A2

    Untitled

    Abstract: No abstract text available
    Text: A L-21030-01 MITSUBISHI ELECTRIC 64MSDRAM Package Outline TSOP II Note) 1.DIMENSIONS "*1" AND "*2" DO NOT INCLUDE MOLD FLASH. 2.DIMENSIONS "*3" DOES NOT INCLUDE TRIM OFF SET. X < *2 scs 22 .22±0.1 snnm) 0 .8± 0.1 . *3 0.1 0.05 + 0.3 - 0.1 (N T S)


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    PDF L-21030-01 64MSDRAM

    8A10

    Abstract: Um 3562
    Text: L-21048-01 MITSUBISHI ELECTRIC 64MSDRAM 3rd Generation Type Designation Code M2 V 64 S 4 0 B T P - 8 Access Item Package Type TP:TSOP ll Process Generation B : 3rd Generation Function 0: Random Column Organization 2n 2: x4, 3: x8, 4: x16 Synchronous DRAM


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    PDF L-21048-01 64MSDRAM 21044-0B M2V64S20BTP M2V64S30BTP M2V64S40BTP 16Mx4 400mil 54pin 8A10 Um 3562

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI ELECTRIC 64MSDRAM Pin Configuration x4 x8 xl6 \ Vdd 54 Vss o DQO DQO 2 53 DQ15 i n NC NC DQO NC NC NC DQ1 NC NC VddQ NC DQ1 DQ1 DQ2 VssQ NC DQ3 DQ2 DQ4 VddQ NC DQ5 DQ3 DQ6 VssQ NC DQ7 Vdd NC DQML /WE /CAS /RAS /CS BA0 A13 BA1(A12) AIO A0 Al A2


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    PDF L-21029-01 64MSDRAM 54Pin 400mil

    Untitled

    Abstract: No abstract text available
    Text: X L-21028-0B MITSUBISHI ELECTRIC 64MSDRAM 2nd Generation Type Designation Code M5M4 V 64 S 4 0 A TP - 8 Access Item Package Type T P :T S O P ll Process Generation Function 0: Random Column Organization 2n 2: x4, 3: x8, 4: x16 Synchronous DRAM Density 64:64M bits


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    PDF L-21028-0B 64MSDRAM L-21024-0A M5M4V64S20ATP 16Mx4 400mil 54pin M5M4V64S30ATP M5M4V64S40ATP

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS HYB39S64400/800/160AT L 64MBit Synchronous DRAM 64 MBit Synchronous DRAM • High Performance: Multiple Burst Operation -8 -8B -10 Units fCKmax. 125 100 100 MHz tCK3 8 10 10 ns tAC3 6 6 7 ns Automatic Command and Read with Single Write Controlled


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    PDF HYB39S64400/800/160AT 64MBit