64K X 16 SRAM Search Results

A12L

Abstract: A13L IDT707288 707288
Contextual Info: HIGH-SPEED 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS Integrated Device Technology, Inc. PRELIMINARY IDT707288S/L FEATURES: DESCRIPTION: • 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture - Four independent 16K x 16 banks

Contextual Info: Integrated Device Technology, Inc. HIGH-SPEED 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS PRELIMINARY IDT707288S/L FEATURES: DESCRIPTION: • 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture - Four independent 16K x 16 banks

Contextual Info: DPS1037 Dense-Pac Microsystems, Inc. 64K X 16 CMOS SRAM MODULE O DESCRIPTION: The DPS1037 is a 64K X 16 high-speed, low-power static RAM module comprised of sixteen 64K X 1 monolithic SRAM's, and decoupling capacitors surface mounted on a co-fired ceramic substrate having

A13L

Abstract: IDT707288 R3592
Contextual Info: HIGH-SPEED 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS Integrated Device Technology, Inc. PRELIMINARY IDT707288S/L FEATURES: DESCRIPTION: • 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture - Four independent 16K x 16 banks

Contextual Info: I * / Integrated Device Technology, Inc. HIGH-SPEED 64K X 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS PRELIMINARY IDT707288S/L FEATURES: DESCRIPTION: • 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture - Four independent 16K x 16 banks

A13L

Abstract: IDT70V7288
Contextual Info: HIGH-SPEED 3.3V 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS Integrated Device Technology, Inc. ADVANCED IDT70V7288S/L FEATURES: DESCRIPTION: • 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture - Four independent 16K x 16 banks

ci 4077

Abstract: A12L A13L IDT70V7288
Contextual Info: HIGH-SPEED 3.3V 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS Integrated Device Technology, Inc. PRELIMINARY IDT70V7288S/L FEATURES: DESCRIPTION: • 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture — Four independent 16K x 16 banks

A12L

Abstract: A13L IDT70V7288 4077 cmos
Contextual Info: HIGH-SPEED 3.3V 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS Integrated Device Technology, Inc. PRELIMINARY IDT70V7288S/L FEATURES: DESCRIPTION: • 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture — Four independent 16K x 16 banks

CY14B101LA-SZ45XI

Abstract: CY14B101LA-SZ25XI
Contextual Info: CY14B101LA CY14B101NA 1 Mbit 128K x 8/64K x 16 nvSRAM 1 Mbit (128K x 8/64K x 16) nvSRAM Features Functional Description • 20 ns, 25 ns, and 45 ns Access Times ■ Internally Organized as 128K x 8 (CY14B101LA) or 64K x 16 (CY14B101NA) ■ Hands off Automatic STORE on Power Down with only a Small

Contextual Info: DPS64X16P □ Dense-Pac Microsystems, Inc. 0_ 64K X 16 CMOS CM SRAM MODULE PRELIMINARY DESCRIPTION: The DPS64X16P is a 64K X 16 high-speed, low-power static RAM module comprised of four 64K X 4 monolithic SRAM's, and decoupling capacitors surface mounted on a FR-4 substrate.

Contextual Info: CY14V101LA CY14V101NA PRELIMINARY 1 Mbit 128K x 8/64K x 16 nvSRAM 1 Mbit (128K x 8/64K x 16) nvSRAM Features Functional Description • 25 ns and 45 ns Access Times ■ Internally Organized as 128K x 8 (CY14V101LA) or 64K x 16 (CY14V101NA) ■ Hands Off Automatic STORE on Power Down with only a small

IN 4077

Abstract: IC 4077 910UB
Contextual Info: \dt Integrated Device Technology, Inc. HIGH-SPEED 3.3V 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS PRELIMINARY IDT70V7288S/L FEATURES: DESCRIPTION: • 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture — Four independent 16K x 16 banks

marking cea

Abstract: A15A A15B
Contextual Info: GALVANTECH, INC. GVT73128S16 REVOLUTIONARY PINOUT 64K X 16 X 2 ASYNCHRONOUS SRAM 64K x 16 x 2 SRAM +3.3V SUPPLY, TWO CHIP ENABLES REVOLUTIONARY PINOUT FEATURES GENERAL DESCRIPTIO N • • • • • • • • • • The GVT73128S16 is organized as a 65,536 x 16 x 2

A13L

Abstract: IDT707288
Contextual Info: HIGH-SPEED 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS Integrated Device Technology, Inc. ADVANCED IDT707288S/L FEATURES: DESCRIPTION: • 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture - Four independent 16K x 16 banks - 1 Megabit of memory on chip

marking BHe

Abstract: GVT7364A16
Contextual Info: GALVANTECH, INC. GVT7364A16 REVOLUTIONARY PINOUT 64K X 16 ASYNCHRONOUS SRAM 64K x 16 SRAM +3.3V SUPPLY, SINGLE CHIP ENABLE REVOLUTIONARY PINOUT FEATURES GENERAL DESCRIPTION • • • • • • • • • • The GVT7364A16 is organized as a 65,536 x 16 SRAM

A12L

Contextual Info: HIGH-SPEED 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH SEMAPHORE CONTROLS Integrated Device Technology, Inc. ADVANCED IDT70728S/L FEATURES: DESCRIPTION: • 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture - Eight independent 8K x 16 banks - 1 Megabit of memory on chip

Contextual Info: Integrated D e v ile Technology, li e . HIGH-SPEED 3.3V 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS PRELIMINARY IDT70V7288S/L FEATURES: DESCRIPTION: • 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture — Four independent 16K x 16 banks

A12L

Contextual Info: HIGH-SPEED 3.3V 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH SEMAPHORE CONTROLS Integrated Device Technology, Inc. ADVANCED IDT70V728S/L FEATURES: DESCRIPTION: • 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture - Eight independent 8K x 16 banks - 1 Megabit of memory on chip

ba2l

Abstract: 1M x 16 SRAM 4-bit register with truth table A12L 1 bit register truth table
Contextual Info: HIGH-SPEED 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH SEMAPHORE CONTROLS Integrated Device Technology, Inc. ADVANCED IDT70728S/L FEATURES: DESCRIPTION: • 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture - Eight independent 8K x 16 banks - 1 Megabit of memory on chip

"Dual-Port RAM" for video applications

Abstract: "32K x 16" dual port SRAM sram with address counter 3.3v counter
Contextual Info: AL5DS9xx9V 3.3V Synchronous Dual-Port SRAM 4K/8K/16K/32K/64K/128K x 8/9/16/18-bit Features True dual ported memory cells 17 Flow-Through/Pipelined devices: - 4K/8K/16K/32K/64K x 18-bit organization AL5DS9349V/59V/69V/79V/89V - 16K/32K/64K x 16-bit organization (AL5DS9269V/79V/89V)

low power sram 64k

Abstract: 9l reset 1517R
Contextual Info: AL5DS9xx9V 3.3V Synchronous Dual-Port SRAM 4K/8K/16K/32K/64K/128K x 8/9/16/18-bit Features ! True dual ported memory cells ! 18 Flow-Through/Pipelined devices: - 4K/8K/16K/32K/64K x 18-bit organization AL5DS9349V/59V/69V/79V/89V - 16K/32K/64K x 16-bit organization (AL5DS9269V/79V/89V)

AWB065

Abstract: seiko epson RAM IC MEMORY CARD "40 pin" 32k sram card 20 pin battery
Contextual Info: JEIDA Ver. 4 STATIC RAM VARIATION Part Number Memory Size AWB065SD*0 AWB129SD*0 AWB257SD*0 AWB513SD*0 AWB101SD*0 AWB201SD*0 64K Bytes 128K Bytes 256K Bytes 512K Bytes 1M Bytes 2M Bytes Description 32K X 16 64K X 16 128K X 16 256K X 16 512K X 16 1M X 16 bits

68w smd

Abstract: CYM1621
Contextual Info: CYM1621 CYPRESS SEMICONDUCTOR 64K x 16 Static RAM Module Features Functional Description • High-density 1-megabit SRAM module The CYM1621 is a high-performance 1-megabit static RAM module organized as 64K words by 16 bits. This module is constructed from sixteen 64K x 1 SRAMs

GVT7364A16

Contextual Info: GALVANTECH, INC. ASYNCHRONOUS SRAM GVT7364A16 REVOLUTIONARY PINOUT 64K X 16 64K x 16 SRAM +3.3V SUPPLY, SINGLE CHIP ENABLE REVOLUTIONARY PINOUT FEATURES GENERAL DESCRIPTIO N • • • • • • • • • • The GVT7364A16 is organized as a 65,536 x 16 SRAM