64KX36 Search Results

CS21

Abstract: KM736V687A KM736V687A-7 KM736V687A-8 KM736V687A-9
Contextual Info: P R E LIM IN A R Y KM736V687A 64Kx36 Synchronous SRAM P o c u M e flL IltJ e 64K x36-Bit S ynchronous Burst SRAM R e visio n H is to ry Rev. No. H isto ry 0.0 Initia l d ra ft 0.1 C h a n g e D C C h a ra c te ris tic s . Ic c v a lu e fro m 3 2 0 m A to 2 5 0 m A

Contextual Info: a W M YP64K36V-XTQX WHITE /MICROELECTRONICS 64Kx36 M o n o lith ic P ipelined Synchronous SRAM advanced * FEATURES • Fast Access Times of 8 and 10ns ■ Industrial and M ilitary Temperature Ranges ■ Fast O E Access Time of 7ns ■ W rite Pass-through Capability

Contextual Info: K7A203600B K7A203200B K7A201800B Preliminary 64Kx36/x32 & 128Kx18 Synchronous SRAM Document Title 64Kx36 & 64Kx32 & 128Kx18-Bit Synchronous Pipelined Burst SRAM Revision History History Draft Date Remark 0.0 1. Initial draft Dec. 10. 2001 Preliminary 0.1 1. Add tCYC 250,225, 200MHz bin.

KM736V687

Abstract: KM736V687-10 KM736V687-8 KM736V687-9
Contextual Info: PRELIMINARY KM736V687 64Kx36 Synchronous SRAM Document Title 64Kx36-Bit Synchronous Burst SRAM, 3.3V Power Datasheets for 100TQFP Revision History Rev. No. History Draft Date Remark Rev. 0.0 Initial draft Nov. 02. 1996 Preliminary Rev. 1.0 Final spec release

Contextual Info: K7A203600B K7A203200B 64Kx36/x32 Synchronous SRAM 2Mb Sync. Pipelined Burst SRAM Specification 100TQFP with Pb only INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

Contextual Info: PRELIMINARY KM736V689A 64Kx36 Synchronous SRAM Document Title 64Kx36-Bit Synchronous Pipelined Burst SRAM Revision History History Draft Date Remark 0.0 Initial draft May. 19. 1998 Preliminary 0.1 Change tOH Min value from 1.3 to 1.0 at tCYC 5.0 Change tHZC Min value from 1.3 to 1.0 at tCYC 5.0

Contextual Info: Advance KM736V695/L 64Kx36 Synchronous SRAM 64K x 36-Bit Synchronous Pipelined Burst SRAM GENERAL DESCRIPTION FEATURES • Synchronous Operation. • 2 Stage Pipelined operation with 4 Burst • On-Chip Address Counter. • Self-Timed Write Cycle. • On- Chip Address and Control Registers.

Contextual Info: KM736V689/L 64Kx36 Synchronous SRAM 64Kx36-Bit Synchronous Pipelined Burst SRAM FEATURES GENERAL DESCRIPTION - Synchronous Operation. . 2 Stage Pipelined operation with 4 Burst. - On-Chip Address Counter. . Self-Timed Write Cycle. - On-Chip Address and Control Registers.

KM736V689A

Contextual Info: PRELIMINARY KM736V689A 64Kx36 Synchronous SRAM 64Kx36-Bit Synchronous Pipelined Burst SRAM FEATURES GENERAL DESCRIPTION • • • • • • • The KM736V689A is a 2,359,296-bit Synchronous Static Random Access Memory designed for high performance second

KM736V687

Abstract: KM736V687-10 KM736V687-8 KM736V687-9 64kx36
Contextual Info: PRELIMINARY KM736V687 64Kx36 Synchronous SRAM 64Kx36-Bit Synchronous Burst SRAM FEATURES GENERAL DESCRIPTION • • • • • • • • • • • • The KM736V687 is 2,359,296 bits Synchronous Static Random Access Memory designed to support zero wait state performance for advanced Pentium/Power PC based system. And

Contextual Info: KM736V695/L 64Kx36 Synchronous SRAM 64Kx36~Bit Synchronous Pipelined Burst SRAM FEATURES GENERAL DESCRIPTION • • • • • • • • • • • The KM736V695/L is a 2,359,296-bit Synchronous Static Ran­ dom Access Memory designed for high performance second

vivax

Contextual Info: KM736V687A 64Kx36 Synchronous SRAM Document Title 64Kx36-Bit Synchronous Burst SRAM Revision History Draft Date REMARK Initial draft July. 03. 1998 Prelim inary 0.1 Change DC Characteristics. Icc value from 320m A to 250m A at -7. Icc value from 300m A to 230m A at -8.

Contextual Info: PRELIMINARY 64Kx36 Synchronous SRAM KM736V689A Document Title 64Kx36-Bit Synchronous Pipelined Burst SRAM, 3.3V Power Datasheets for 100TQFP Revision History Rev. No. History Draft Date Remark 0.0 Initial draft May. 19. 1998 Prelim inary 0.1 Change tOH Min value from 1.3 to 1.0 at tcyc 5.0

KM736V689A

Contextual Info: PRELIMINARY KM736V689A 64Kx36 Synchronous SRAM Document Title 64Kx36-Bit Synchronous Pipelined Burst SRAM Revision History History Draft Date Remark 0.0 Initial draft May. 19. 1998 Preliminary 0.1 Change tOH Min value from 1.3 to 1.0 at tCYC 5.0 Change tHZC Min value from 1.3 to 1.0 at tCYC 5.0

K7A203200B

Abstract: K7A203600B
Contextual Info: K7A203600B K7A203200B 64Kx36/x32 Synchronous SRAM Document Title 64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM Revision History History Draft Date Remark 0.0 1. Initial draft Dec. 10. 2001 Preliminary 0.1 1. Add tCYC 250,225, 200MHz bin. Jan . 17. 2002

Contextual Info: a WM Y64K36V-XTQX WHITE /MICROELECTRONICS 64Kx36 Monolithic Flow Through Synchronous SRAM advanced* FEATURES • Fast Access Times of 10 and 11 ns ■ Industrial and M ilitary Temperature Ranges ■ Fast OE Access Time of 7ns ■ W rite Pass-through Capability

Contextual Info: 6 4 K x 36 S y n c h r o n o u s SR A M KM 736V689/ L t 64Kx36-Bit Sync hr ono us Pipelined Burst SR AM , 3.3V Power Datasheets for 100TQFP R e v is io n H is to ry R ev.N o. H Istorv Draft Date R e m ark Rev. 0.0 Initial draft Nov. Preliminary Rev. 1.0 Final spec release

Contextual Info: KM736V687 64Kx36 Synchronous SRAM 64Kx36-Bit Synchronous Burst SRAM FEATURES GENERAL DESCRIPTION • • • • • • • ■ • • • • The KM736V687 is 2,359,296 bits Synchronous Static Random Access Memory designed to support zero wait state perfor­

KM736V687A

Abstract: KM736V687A-7 KM736V687A-8 KM736V687A-9
Contextual Info: KM736V687A 64Kx36 Synchronous SRAM 64Kx36-Bit Synchronous Burst SRAM FEATURES GENERAL DESCRIPTION • Synchronous Operation. • On-Chip Address Counter. • Write Self-Timed Cycle. • On-Chip Address and Control Registers. • VDD= 3.3V+0.3V/-0.165V Power Supply.

Contextual Info: IS64LF6436 IS64LF6432 ISSI 64K x 32, 64Kx36 SYNCHRONOUS FLOW-THROUGH STATIC RAM PRELIMINARY INFORMATION AUGUST 2003 DESCRIPTION FEATURES The ISSI IS64LF6432 and IS64LF6436 are high-speed, low-power synchronous static RAM designed to provide a burstable, high-performance, memory. IS64LF6432 is organized as 65,536 words by 32 bits and IS64LF6436 is

Contextual Info: K7B203625B K7B203225B K7B201825B 64Kx36/x32 & 128Kx18 Synchronous SRAM Document Title 64Kx36/x32 & 128Kx18-Bit Synchronous Burst SRAM Revision History Rev. No. 0.0 History Draft Date Remark 1. Initial draft Jan. 17. 2002 Preliminary The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

Contextual Info: KM736V687A 64Kx36 Synchronous SRAM Document Title 64Kx36-Bit Synchronous Burst SRAM Revision History Draft Date REMARK Initial draft July. 03. 1998 Prelim inary 0.1 Change DC Characteristics. Ic c value from 320m A to 250m A at -7. Ic c value from 300m A to 230m A at -8.

IS61LF6432A

Abstract: IS61LF6436A
Contextual Info: IS61LF6436A IS61LF6432A ISSI 64K x 32, 64Kx36 SYNCHRONOUS FLOW-THROUGH STATIC RAM OCTOBER 2005 DESCRIPTION FEATURES The ISSI IS61LF6432A and IS61LF6436A are high-speed, low-power synchronous static RAM designed to provide a burstable, high-performance, memory. IS61LF6432A is

Contextual Info: PRELIMINARY KM736V689/L 64Kx36 Synchronous SRAM Document Title 64Kx36-Bit Synchronous Pipelined Burst SRAM, 3.3V Power Datasheets for 100TQFP Revision History Rev. No. History Draft Date Remark Rev. 0.0 Initial draft Nov. 17. 1996 Preliminary Rev. 1.0 Final spec release