64MX16 Search Results

Contextual Info: 214PIN DDR2 533 Micro-DIMM 1GB With 64Mx16 CL4 TS128MMQ64V5Q Description Placement The TS128MMQ64V5Q is a 128M x 64bits DDR2-533 J Micro-DIMM. The TS128MMQ64V5Q consists of 8pcs 64Mx16bits DDR2 SDRAMs in 92 ball FBGA packages and a 2048 bits serial EEPROM on printed circuit board

Contextual Info: MEMORY MODULE DDR SDRam 64Mx16-SOP Double Data Rate SDRam MODULE 3D 1D1G16TS1267 1Gbit DDR SDRam organized as 64Mx16 Pin Assignment Top View SOP 66 (Pitch : 0.65 mm) Features • • • • • • • • • • • • • • • • One 1Gbit DDR SDRam

3D2D4G72UB3478

Contextual Info: MEMORY MODULE DDR2 SDRam 64Mx72-BGA DDR2 SDRAM MODULE 3D 2D4G72UB3478 4Gbit DDR2 SDRam organized as 64Mx72, based on 64Mx16 Pin Assignment BGA 191 - 12x20 - Pitch 1.27mm Features • Organized as 64Mx72  Core supply voltage 1.8V +/- 0.1V  I/O supply voltage 1.8V +/- 0.1V

SG564643FG8N6IR

Abstract: DDR2-667-5-5-5 SG564643FG8N6KF SG564643FG8N6IL
Contextual Info: SG564643FG8N6UU May 19, 2008 Ordering Information Part Numbers Description Module Speed SG564643FG8N6DB 64Mx64 512MB , DDR2, 240-pin DIMM, Unbuffered, Non-ECC, 64Mx16 Based, DDR2-400-333, 30.00mm, 22Ω DQ termination, Green Module (RoHS Compliant). PC2-3200 @ CL 3.0

Contextual Info: IS43/46TR16640A, IS43/46TR16640AL IS43/46TR81280A, IS43/46TR81280AL 128MX8, 64MX16 1Gb DDR3 SDRAM NOVEMBER 2013 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V       

Contextual Info: IS43/46TR16640B, IS43/46TR16640BL IS43/46TR81280B, IS43/46TR81280BL 128MX8, 64MX16 1Gb DDR3 SDRAM NOVEMBER 2014 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V  Refresh Interval: 7.8 us (8192 cycles/64 ms) Tc= -40°C to 85°C

Contextual Info: Preliminary HY27UF 08/16 1G2M Series HY27SF(08/16)1G2M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Document Title 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft. Aug. 2004 Preliminary

NT1GC64BH8A1PS-BE

Contextual Info: NT1GC64BH8A1PS / NT2GC64B8HA1NS 1GB: 128M x 64 / 2GB: 256M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SO-DIMM Based on DDR3-1066/1333 64Mx16 1GB / 128Mx8 (2GB) SDRAM A-Die Features •Performance: Speed Sort DIMM CAS Latency fck – Clock Freqency PC3-8500

H5MS1G62

Abstract: H5MS1G62MFP-J3M H5MS1G62MFP hynix mcp h5ms1g DDR400 ap die hen mcp H5MS1G62MFP-K3M
Contextual Info: 1Gbit MOBILE DDR SDRAM based on 16M x 4Bank x16 I/O Specification of 1Gb 64Mx16bit Mobile DDR SDRAM Memory Cell Array - Organized as 4banks of 16,777,216 x16 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for

Contextual Info: H5PS1G63EFR 1Gb 64Mx16 DDR2 SDRAM H5PS1G63EFR This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.1/ Oct. 2008

PC2-6400

Abstract: sodimm pinout 200Pin SO-DIMM PC2 6400 128 m 64 64mx16 NT2GT64U8HD0BN-AC pc2-4200
Contextual Info: NT1GT64UH8D0FN / NT2GT64U8HD0BN 1GB: 128M x 64 / 2GB: 256M x 64 PC2-4200 / PC2-5300 / PC2-6400 Unbuffered DDR2 SO-DIMM Based on DDR2-533/667/800 64Mx16 1GB /128Mx8 (2GB) SDRAM D-Die Features • Performance: PC2-4200 PC2-5300 PC2-6400 PC2-6400 -37B -3C -AD

Contextual Info: FEDR26V01G54R-01-01 OKI Semiconductor MR26V01G54R 32M–Word x 32–Bit Page Mode Issue Date: Oct 30, 2007 P2ROM PIN CONFIGURATION TOP VIEW FEATURES 32Mx32 or 64Mx16-bit electrically switchable configuration • Page size of 8-word x 32-Bit or 16-word x 16-Bit

Contextual Info: NT512T64UH4D0FY / NT1GT64U88D0BY / NT2GT64U8HD0BY 512MB: 64M x 64 / 1GB: 128M x 64 / 2GB: 256M x 64 Unbuffered DDR2 SDRAM DIMM 240pin Unbuffered DDR2 SDRAM MODULE Based on 64Mx16 DDR2 SDRAM D-die 512MB Based on 128Mx8 DDR2 SDRAM D-die (1GB/2GB) Features

128M*8BIT

Contextual Info: FEDR36V01G52B-002-01 Issue Date: Nov. 18, 2009 MR36V01G52B 64M–Word x 16–Bit or 128M–Word × 8–Bit Page Mode P2ROM FEATURES PIN CONFIGURATION TOP VIEW 64Mx16 or 128Mx8-bit electrically switchable configuration • Page size of 8-word x 16-Bit or 16-word x 8-Bit

1170D28

Contextual Info: FEDR26V01G54R-002-03 Issue Date: Oct. 01, 2008 MR26V01G54R 32M–Word x 32–Bit or 64M–Word × 16–Bit Page Mode P2ROM PIN CONFIGURATION TOP VIEW FEATURES 32Mx32 or 64Mx16-bit electrically switchable configuration • Page size of 8-word x 32-Bit or 16-word x 16-Bit

IS43TR16640A

Contextual Info: IS43/46TR16640A, IS43/46TR16640AL IS43/46TR81280A , IS43/46TR81280AL 128MX8, 64MX16 1Gb DDR3 SDRAM ADVANCED INFORMATION NOVEMBER 2012 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V •

49/SG564283FG8NWIL

Contextual Info: SG564283FG8NWUU June 16, 2008 Ordering Information Part Numbers Description Module Speed SG564283FG8NWDB 128Mx64 1GB , DDR2, 200-pin SO-DIMM, Unbuffered, Non-ECC, 64Mx16 Based, DDR2-400-333, 30.00mm, 22Ω DQ termination, Green Module (RoHS Compliant). PC2-3200 @ CL 3.0

hynix nand 1G

Abstract: hynix nand flash HY27 hynix nand hy27ua hynix 1g flash memory hynix nand spare area 48TSOP hynix nand flash memory
Contextual Info: Preliminary HY27UA 08/16 1G1M Series HY27SA(08/16)1G1M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Document Title 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory Revision History No. History Draft Date Remark 0.0 1) Initial Draft Nov. 28. 2003 Preliminary

VCCQ15

Contextual Info: White Electronic Designs W3E64M16S-XSBX PRELIMINARY* 64Mx16 DDR SDRAM FEATURES BENEFITS „ DDR SDRAM rate = 200, 250, 266, 333* „ „ Package: „ • 60 Plastic Ball Grid Array PBGA , 10 x 12.5mm „ 1Gb upgrade to 512Mb 60 FBGA SDRAM „ 2.5V ±0.2V core power supply

HY27US081G1M

Abstract: hynix NAND ECC hynix nand spare area 48pin-TSOP1 HY27US161G1M hynix naming hynix nand reset nand flash HYNIX Hynix Nand flash code Hynix E NAND
Contextual Info: Preliminary HY27US 08/16 1G1M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash 1Gb NAND FLASH HY27US081G1M HY27US161G1M This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.

NT1GT64UH8D0FN-AD

Abstract: 64mx16 NT1GT64UH8D0FN-3C PC2-5300 64MX16 DDR2 PC2-6400
Contextual Info: NT512T64UH4D0FN / NT1GT64UH8D0FN / NT2GT64U8HD0BN NT512T64UH4D0FS / NT1GT64UH8D0FS / NT2GT64U8HD0BS 512MB: 64M x 64 / 1GB: 128M x 64 / 2GB: 256M x 64 PC2-4200 / PC2-5300 / PC2-6400 Unbuffered DDR2 SO-DIMM Based on DDR2-533/667/800 64Mx16 512MB /64Mx16 (1GB)/128Mx8 (2GB) SDRAM D-Die

SODIMM DDR2 Mechanical Dimensions

Abstract: PC2-6400 PC2-5300 SSTL-18 NT2GT64U8HC0BN
Contextual Info: NT1GT64UH8C0FN / NT2GT64U8HC0BN 1GB: 128M x 64 / 2GB: 256M x 64 PC2-4200 / PC2-5300 / PC2-6400 Unbuffered DDR2 SO-DIMM Preliminary Edition Based on DDR2-533/667/800 64Mx16 1GB /128Mx8 (2GB) SDRAM C-Die Features • Performance: PC2-4200 PC2-5300 PC2-6400

IS43TR16640A

Abstract: IS43TR81280A DDR31866K 64MX16 bc 888
Contextual Info: IS43/46TR16640A/AL, IS43/46TR81280A/AL 128Mx8, 64Mx16 1Gb DDR3 SDRAM ADVANCED INFORMATION DECEMBER 2011 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V         

Contextual Info: 172PIN DDR2 533 Micro-DIMM 1024MB With 64Mx16 CL4 TS1GPA1024U5 Description Placement The TS1GPA1024U5 is a 128M x 64bits DDR2-533 Micro-DIMM. The TS1GPA1024U5 consists of 8pcs 64Mx16bits DDR2 SDRAMs in 92 ball FBGA packages and a 2048 bits serial EEPROM on a 172-pin printed